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15 Sep 1978

Volume 33, Issue 6, pp. 479-551

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Photoluminescence topographic observation of defects in silicon crystals

Hisao Nakashima and Yasuhiro Shiraki

Appl. Phys. Lett. 33, 545 (1978); http://dx.doi.org/10.1063/1.90439 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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A simple rapid nondestructive method of evaluating defects in silicon crystals is developed. This method is basically an observation of photoluminescence (PL) pattern or PL topography. The correlation between the PL topograph and the defects are examined by preferential etching. Stacking faults and dislocations which are known to adversely affect many devices are found to be observed as dark spots in the PL topograph.
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78.40.Fy Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects

Defect distribution near the surface of electron‐irradiated silicon

K. L. Wang, Y. H. Lee, and J. W. Corbett

Appl. Phys. Lett. 33, 547 (1978); http://dx.doi.org/10.1063/1.90440 (2 pages) | Cited 31 times

Online Publication Date: 8 August 2008

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The surface‐defect distributions of electron‐irradiated n‐type silicon has been investigated using a transient capacitance technique. Schottky, p‐n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution but not that of oxygen and other capture center’s distribution. The vacancy diffusion length at 300 °K was estimated to be about 3–6 μm.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.-x Physical radiation effects, radiation damage

Edge effect in high‐resolution scanning Auger‐electron microscopy

R. Shimizu, T. E. Everhart, N. C. MacDonald, and C. T. Hovland

Appl. Phys. Lett. 33, 549 (1978); http://dx.doi.org/10.1063/1.90441 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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An edge effect observed in high‐resolution scanning Auger‐electron microscopy is modeled by Monte Carlo methods based on the direct simulation of individual inelastic scattering processes. The Monte Carlo method permits the simulation of the spatial distribution of excited electrons generated by inelastic scattering. The results suggest that high‐energy excited (’’secondary’’) electrons are a significant source of Auger electrons (L‐MM transition) in aluminum and play an important role in causing the edge effect.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
79.20.Fv Electron impact: Auger emission
32.80.Hd Auger effect (including Coster-Krönig transitions)
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