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1 Oct 1978

Volume 33, Issue 7, pp. 555-681

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Control of storage and writing times in the diode storage correlator

K. W. Loh, D. K. Schroder, and P. R. Emtage

Appl. Phys. Lett. 33, 555 (1978); http://dx.doi.org/10.1063/1.90485 (2 pages)

Online Publication Date: 8 August 2008

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In Si junction diodes it is possible to achieve a short recombination time together with a large storage time at room temperature by deliberately introducing impurities with asymmetric trapping levels, such as Pt, into the region of the junction. It is shown that this technique can be used in surface‐acoustic‐wave devices to increase the bandwidth by reducing the writing time on a junction memory to 5×10−9 sec while the storage time remains above 0.2 sec.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.-z Semiconductor devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Length and depth resonances of surface cracks and their use for crack size estimation

V. Domarkas, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 33, 557 (1978); http://dx.doi.org/10.1063/1.90486 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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Angular scattering from surface cracks has been used for determining the length of a surface crack. This technique assumes the physical availability of space to carry out an angular scattering experiment, and makes no estimation of the depth of the crack. In this work, we report a new technique where the scattering from surface cracks is made versus frequency, at one angle of incidence only. Length and depth resonances of the crack are observed and used to estimate the crack geometry. We made our measurements on EDM notches in steel. The geometry of the crack has been predicted with an accuracy of 10–20%.
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43.20.Fn Scattering of acoustic waves
46.50.+a Fracture mechanics, fatigue and cracks
43.20.Ks Standing waves, resonance, normal modes
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

TTE suppressed surface acoustic wave filter

Masahide Tsukamoto

Appl. Phys. Lett. 33, 559 (1978); http://dx.doi.org/10.1063/1.90463 (2 pages)

Online Publication Date: 8 August 2008

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A new design of SAW filters having an inclined and tapered three transducer (ITTT) configuration is effective for the suppression of the triple‐transit (TTE) caused by the regeneration of an surface acoustic wave. In the ITTT configuration, the electrode fingers of the transducers are not parallel with each other but are tapered, and further, each of the outer output transducers is inclined with respect to the central input transducer. A video i.f. filter for TV having the ITTT configuration was fabricated using a piezoelectric ceramic substrate. The filter exhibited an insertion loss of 9.6 dB and ripple in the group delay of less than 50 nsec.
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43.60.-c Acoustic signal processing
43.38.Fx Piezoelectric and ferroelectric transducers
72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

A method of measuring the low tilt bias angle of liquid crystals

K. Suzuki, K. Toriyama, and A. Fukuhara

Appl. Phys. Lett. 33, 561 (1978); http://dx.doi.org/10.1063/1.90487 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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A new method of measuring the low tilt bias angles of liquid‐crystal displays is proposed. It is based on the threshold characteristics of magnetocapacitance, which vary according to the relative direction of the magnetic field and the directors. The tilt bias angle is determined completely by geometrical configurations and without any fitting procedure. The method ensures accuracy up to 0.1° in the present example. Threshold field variations due to sample rotation in the magnetic field are calculated from the theoretical magnetocapacitive curves, and experimental results are in good agreement with them.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems

Transport and optical properties of electrochromic Au‐WO3 cermets

E. K. Sichel and J. I. Gittleman

Appl. Phys. Lett. 33, 564 (1978); http://dx.doi.org/10.1063/1.90488 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The electrochromic cermet Au‐WO3 is composed of grains of Au, approximately 20–120 Å in diameter, embedded in a matrix of amorphous WO3. The optical properties of the cermet, in its red electrochemically colored state, are different from the optical properties of its two components. WO3 becomes highly electrically conducting when colored, but colored WO3 in the presence of Au grains remains an insulator. A study of the optical and electrical properties of the cermet as a function of gold concentration is presented.
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85.60.Pg Display systems
81.05.Mh Cermets, ceramic and refractory composites
82.45.-h Electrochemistry and electrophoresis
71.30.+h Metal-insulator transitions and other electronic transitions

Electrochromism of heat‐treated anodic iridium oxide films in acidic, neutral, and alkaline solutions

G. Beni and J. L. Shay

Appl. Phys. Lett. 33, 567 (1978); http://dx.doi.org/10.1063/1.90489 (2 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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We show that coloration and bleaching times of anodic iridium oxide films (AIROF’s) are insensitive to pH. Similar kinetics are observed for aqueous solutions of 0.5M H2SO4, 4M LiNO3, or 0.5M NaOH, and for a solution of 3M LiNO3 in methanol. This suggests that long‐term stability may be achieved without degrading response time. It also shows that the mechanism for electrochromism in AIROF’s is fundamentally different from the ion‐electron double‐injection operative in the tungsten bronzes and recently proposed for AIROF’s. In fact it appears to be sufficient that current flow across the AIROF solution interface be carried solely by electrons. We also show that AIROF’s have markedly improved bleaching kinetics, reproducibility, and stability following heat treatment.
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78.20.Jq Electro-optical effects

Dissociative attachment of electrons to F2

B. I. Schneider and C. A. Brau

Appl. Phys. Lett. 33, 569 (1978); http://dx.doi.org/10.1063/1.90490 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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The rate of dissociative attachment of electrons to F2 in mixtures with N2 and Ar has been measured over the electron mean energy range 0.9–4 eV. The results show that the rate is about 7×10−9 cm3/s at a mean energy of 1 eV, and decreases with increasing electron mean energy as (mean energy)−3/2.
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34.80.Bm Elastic scattering
42.55.Ks Chemical lasers

An analysis of Compton scattering from planar channeled positrons

R. H. Pantell

Appl. Phys. Lett. 33, 571 (1978); http://dx.doi.org/10.1063/1.90491 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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The cross section for Compton scattering can be appreciably enhanced if energy is conserved in the initial to intermediate state transition. This resonance condition cannot be satisfied for a free particle, but it can be met if the particle is in a static electric or magnetic field. In this paper an analysis is presented for light scattering from relativistic particles in an electrostatic potential. Planar channeled positrons are used as the example. It is possible to achieve a large frequency upshift from the incident to the scattered radiation, with a cross section that is many orders of magnitude larger than the usual Compton cross section.
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13.60.Fz Elastic and Compton scattering
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Ionic recombination of Kr+ and Kr+2 with F− in dense buffer rare gases

M. R. Flannery and T. P. Yang

Appl. Phys. Lett. 33, 574 (1978); http://dx.doi.org/10.1063/1.90464 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Rates, α, for the recombination of Kr+ and Kr+2 with F− in various buffer rare gases (He, Ne, Ar, Kr, Xe) at 300 K are calculated for a wide range of gas pressures. For pressures 1–5 atm, the population of KrF∗ via recombination is greatest for Ne and Ar as third bodies, yielding α∼3×10−6 cm3 sec−1, while for pressures ≳10 atm, He is to be preferred as a buffer gas.
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34.50.Lf Chemical reactions
34.70.+e Charge transfer
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

A comparison of surface analysis using ion scattering, ion‐produced photons, and secondary ion emission

R. J. MacDonald, W. Heiland, and E. Taglauer

Appl. Phys. Lett. 33, 576 (1978); http://dx.doi.org/10.1063/1.90465 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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ISS, SIMS (recoil target ions), and ion‐produced photon emission (IPP) from surfaces subject to low‐energy ion bombardment have been compared by simultaneous measurement of the effect of reactive gas adsorption on each signal. A direct correlation between the three signal strengths has been established. Cross sections for desorption of CO from Ni due to low‐energy ion bombardment have been measured independently and simultaneously by two of the three methods.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

A unified explanation for secondary ion yields

V. R. Deline, C. A. Evans, and Peter Williams

Appl. Phys. Lett. 33, 578 (1978); http://dx.doi.org/10.1063/1.90466 (3 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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The pure element secondary ion yields under oxygen and cesium ion bombardment are shown to be solely dependent on a) the ionization potential (or electron affinity for negative ionization) of the sputtered atom and b) the reciprocal of the matrix sputtering yield which determines the equilibrium concentration of implanted oxygen or cesium. This unified approach accounts for the yields of C±, Si±, Ge± and Sn± from the pure elements as well as of Ga± and As± from gallium arsenide.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Applicability of the Scher‐Montroll model to transient photocurrent and surface potential decay in insulators

M. M. Perlman and S. Bamji

Appl. Phys. Lett. 33, 581 (1978); http://dx.doi.org/10.1063/1.90467 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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Transient photocurrent measurements in anthracene crystals and surface potential decay measurements in polyethylene and phthalocyanine films show that care must be taken when applying the normalized logI‐vs‐logt plot of the Scher‐Montroll model to determine transit times. In all three materials, two intersecting straight lines were obtained in the featureless time region beyond previously measured transit times. It is suggested that for the particular fields and thicknesses of samples used, the transit time may be too short to observe by the particular experimental method used, or that the carriers may never reach the rear electrode. In both cases featureless decay curves will be observed, and the logI‐vs‐logt plot can predict erroneous results. Universality seems to be generally obeyed.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.40.+w Photoconduction and photovoltaic effects

Depolarization of photoelectrons emitted from optically pumped GaAs

M. Erbudak and B. Reihl

Appl. Phys. Lett. 33, 584 (1978); http://dx.doi.org/10.1063/1.90468 (2 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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The spin polarization of photoelectrons emitted from optically pumped negative electron affinity GaAs shows a systematic depolarization. This is attributed to the spin‐flip scattering at the Cs‐O‐Cs overlayer. The photoexcited electrons thermalize to the Γ point prior to their escape and hence go through the overlayer with the same kinetic energy resulting in photon‐energy‐independent polarization loss.
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81.65.-b Surface treatments

Nonlinear dependence of cathodoluminescence on activator concentrations

Lyuji Ozawa

Appl. Phys. Lett. 33, 586 (1978); http://dx.doi.org/10.1063/1.90469 (2 pages)

Online Publication Date: 8 August 2008

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It has been demonstrated that the concentration‐dependence curve of cathodoluminescence provides us with a new tool for studying the statistical results of the motion of the mobile carriers in crystals. The experimental results reveal the nonlinear dependence on the activator concentration, suggesting an unknown motion of the mobile carriers in the crystals.
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78.60.Hk Cathodoluminescence, ionoluminescence

High‐efficiency Cr‐MIS solar cells on single and polycrystalline silicon

W. A. Anderson, A. E. Delahoy, J. K. Kim, S. H. Hyland, and S. K. Dey

Appl. Phys. Lett. 33, 588 (1978); http://dx.doi.org/10.1063/1.90470 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Cr‐MIS solar cells having a 2‐cm2 area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface‐state data were used to predict open‐circuit voltages of 0.60 and 0.50 V, respectively, for the single‐crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short‐circuit current density using these two types of Si.
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84.60.Jt Photoelectric conversion

Far‐infrared ring laser

J. Heppner and C. O. Weiss

Appl. Phys. Lett. 33, 590 (1978); http://dx.doi.org/10.1063/1.90471 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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The amplitude noise of optically pumped cw FIR lasers is drastically reduced by using a FIR ring resonator instead of a linear resonator. Laser emission switches from the clockwise mode to the counterclockwise mode at the FIR line center, a feature permitting precise frequency stabilization of FIR lasers. With an auxiliary retroreflector for one of the modes, unidirectional output occurs across the whole laser tuning width.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Electroluminescence from the on state of a thin‐film chalcogenide glass

Peter J. Walsh, Sachio Ishioka, and David Adler

Appl. Phys. Lett. 33, 593 (1978); http://dx.doi.org/10.1063/1.90472 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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A narrow‐band emission has been detected at room temperature during the pulsed on state of a well‐characterized threshold switching material, amorphous Te39As36Si17Ge7P1. The luminescence peak is centered around 0.55±0.03 eV, very close to half of the optical band gap of this material, 1.1 eV. This ratio of luminescence peak to optical band gap is similar to that obtained from the photoluminescence of a large class of chalcogenide glasses in their off states, strongly suggesting that the origins of the on‐state electroluminescence and off‐state photoluminescence are the same. The electroluminescence exhibits a threshold behavior, appearing only for on‐state currents in excess of 4 mA. The output follows a Lambertian law for solid angles up to about 0.7 sr, and slowly deviates below the Lambertian law at larger solid angles. The width of the luminescence line is less than 0.1 eV, indicating that its origin cannot be blackbody radiation. This provides another confirmation of the electronic nature of threshold switching.
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78.60.Fi Electroluminescence
72.20.Ht High-field and nonlinear effects
72.80.Ng Disordered solids
78.20.Jq Electro-optical effects

Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)

R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, N. Holonyak, and H. Shichijo

Appl. Phys. Lett. 33, 596 (1978); http://dx.doi.org/10.1063/1.90473 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Data are presented showing that AlxGa1−xAs (x∼0.42) grown by metalorganic chemical vapor deposition (MO‐CVD) will operate as a photopumped laser to wavelengths as short as ∼6200 Å (77 °K). From the different spectral behavior of two separately photopumped epitaxial AlxGa1−xAs (x∼0.36) confining layers (1 and 0.3 μm thick) with an 80‐Å (and a comparison 200‐Å) GaAs quantum‐well center layer, the recombination of hot electrons with holes collected in the quantum layer is used to estimate ΔEv.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.55.Hx Other solid inorganic materials

Generation of picosecond pulses of variable duration at 10.6 μm

S. A. Jamison and A. V. Nurmikko

Appl. Phys. Lett. 33, 598 (1978); http://dx.doi.org/10.1063/1.90474 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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Ultrashort transients of variable duration have been generated at 10.6 μm by operating a fast optical switch with picosecond pulses from a mode‐locked Nd : glass laser. The switch, which takes advantage of the large free‐carrier contribution to the infrared optical susceptibility in Ge, has been used to generate megawattt picosecond pulses at 10.6 μm by synchronous operation of a TEA CO2 laser with the 1.06 μm source.
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42.72.-g Optical sources and standards
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

The importance of the electron affinity of oxide‐semiconductors as used in solar cells

R. Singh and J. Shewchun

Appl. Phys. Lett. 33, 601 (1978); http://dx.doi.org/10.1063/1.90475 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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The electron affinity of oxide semiconductors (In2O3,SnO2, etc.) is a topic of current interest. These materials are capable of forming barrier devices on a number of semiconductors which exhibit good photovoltaic conversion efficiency. We will show that simple methods based on the electrical measurements of oxide‐semiconductor/base‐semiconductor systems often lead to incorrect results, due to the uncertainty in the Fermi‐level position in the oxide‐semiconductors and other interface parameters. To determine the true potential of a particular oxide‐semiconductor, other methods should be used to find the electron affinity.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion

Multiple fiber end fire coupling with single‐mode channel waveguides

H. P. Hsu, A. F. Milton, and W. K. Burns

Appl. Phys. Lett. 33, 603 (1978); http://dx.doi.org/10.1063/1.90476 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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We demonstrate a practical four‐port flip chip end fire coupler useful for providing efficient coupling between single‐mode fibers and Ti‐diffused LiNbO3 channel waveguides. Channel waveguide ends were prepared for coupling by cleavage. With a configuration suitable for multiple fiber coupling, coupling efficiencies up to 47% have been measured for TM polarization. Using micropositioners to align single input and output fibers with respect to the channel waveguide, end fire coupling efficiency was 58% (TM). The effect of waveguide mode mismatch and misalignment on coupling efficiency is investigated. We also observe double refraction and leaky mode propagation with TE polarized input to LiNbO3 channel waveguides running perpendicular to the cleavage plane. With suitably prepared channel waveguides on LiTaO3, these effects are small or absent.
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42.82.-m Integrated optics
42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Vapor‐grown InGaP/GaAs solar cells

G.H. Olsen, M. Ettenberg, and R. V. D’Aiello

Appl. Phys. Lett. 33, 606 (1978); http://dx.doi.org/10.1063/1.90477 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH3 hydride technique. Thin (∼200 Å) layers of InGaP were used to passivate the GaAs top surface. We observe a 70‐fold increase in photoluminescence intensity of the GaAs after passivation, which is consistent with a lowering of the GaAs surface recombination velocity from ≳106 to <104 cm/sec. Short‐circuit current densities (Jsc) as high as 22 mA/cm2 and open‐circuit voltages as high as 0.96 V were observed. (If achieved together, those values would yield an efficiency of almost 18%.) Voc was observed to increase directly with p‐layer thickness (t), whereas Jsc decreased directly with t. The efficiency also increased as the zinc doping was decreased.
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84.60.Jt Photoelectric conversion

Optical surface waves along a toroidal metallic guide

M. E. Marhic, L. I. Kwan, and M. Epstein

Appl. Phys. Lett. 33, 609 (1978); http://dx.doi.org/10.1063/1.90478 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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An approximate analysis shows that rays guided inside a torus oscillate sinusoidally around the equator. Expressing the Helmholtz equation in toroidal coordinates yields the equivalent index of refraction. The equation can be solved, yielding Airy functions in the direction perpendicular to the surface. Along the surface the equation is similar to that for media with a quadratic index profile, the Hermite‐Gaussian solutions of which follow sinusoidal trajectories while oscillating in width. Experimental verification of these features is presented.
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42.79.Gn Optical waveguides and couplers
42.25.Gy Edge and boundary effects; reflection and refraction

Photon detection in nonlinear tunneling devices

J. R. Tucker and M. F. Millea

Appl. Phys. Lett. 33, 611 (1978); http://dx.doi.org/10.1063/1.90479 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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A quantum generalization of classical microwave mixer theory is developed to project the performance of nonlinear tunneling barriers at high frequencies. The results demonstrate that such devices may be considered photon detectors when their conductance varies rapidly on a scale of voltage hω/e. Tunnel barrier mixers are thus shown to offer potential for the development of wide‐band quantum noise limited detectors in the wavelength region from 10 μm to a few millimeters.
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73.40.Gk Tunneling
73.40.Ei Rectification
74.50.+r Tunneling phenomena; Josephson effects

XeF excimer pumping of Nd : P5O14

Jack Wilson, David C. Brown, and Walter K. Zwicker

Appl. Phys. Lett. 33, 614 (1978); http://dx.doi.org/10.1063/1.90480 (3 pages)

Online Publication Date: 8 August 2008

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We report the first excimer (XeF) pumping of Nd3+ in a pentaphosphate (Nd : P5O14) host. Absorption of the XeF laser output of 3530 Å by the Nd3+ transition (4I9/2→4D3/2) results in laser output at the 1.05‐μ transition (4F3/2→4I11/2). Pumped in an oscillator configuration, threshold energy was only ≃3 mJ while slope efficiency was ≃1%. Temporal output consists of a single pulse of duration (FWHM) ≃6.6 ns; it arises due to the combination of short pump pulse (≃24 ns FWHM) and high gain of the pentaphosphate output. The device is expected to find considerable application in producing short (1–10 ns) pulses without the complication of a Q switch required in conventional flashlamp‐pumped lasers.
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42.55.Rz Doped-insulator lasers and other solid state lasers
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