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15 Oct 1978

Volume 33, Issue 8, pp. 685-788

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Measurement of interface‐state parameters near the band edge at the Si/SiO2 interface by the conductance method

M. Morita, K. Tsubouchi, and N. Mikoshiba

Appl. Phys. Lett. 33, 745 (1978); http://dx.doi.org/10.1063/1.90525 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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The interface‐state parameters near the band edge at the Si/SiO2 interface were measured using the MOS conductance method with the reflection technique, extending the frequency up to 100 MHz. The double peaks were observed in the conductance‐vs‐frequency curves. The decrease of the capture cross section toward the band edge was found due to the overlap of the double peaks. The new peak at higher frequencies suggests the existence of new interface states, which has been overlooked so far.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Surface potential of anodized p‐GaAs MOS capacitors

L. G. Meiners

Appl. Phys. Lett. 33, 747 (1978); http://dx.doi.org/10.1063/1.90526 (2 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Metal‐oxide‐semiconductor (MOS) capacitors were constructed on p‐type GaAs anodized in a tartaric acid‐water‐glycol solution at room temperature, and capacitance‐voltage measurements were made on them from the quasistatic regime to 150 MHz. The data thus obtained indicate that the zero‐bias surface potential is 0.59 V, that the total surface potential excursion is limited to ∼0.45 V, and that neither flatband nor inversion were achievable. The minimum in surface‐state density was ∼4×1012 cm−2 eV−1.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
84.32.Tt Capacitors

Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions

H. Kroemer, Wu.Yi Chien, H. C. Casey, and A. Y. Cho

Appl. Phys. Lett. 33, 749 (1978); http://dx.doi.org/10.1063/1.90527 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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The photocollection efficiency of abrupt p (GaAs) ‐N (AlxGa1−xAs) heterojunctions is found to be far too large to be compatible with the unmodified Shockley‐Anderson model. The results are interpreted by postulating a positive interface charge density σ≃6×1011 cm−2.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

Thermally assisted flash annealing of silicon and germanium

R. L. Cohen, J. S. Williams, L. C. Feldman, and K. W. West

Appl. Phys. Lett. 33, 751 (1978); http://dx.doi.org/10.1063/1.90528 (3 pages) | Cited 26 times

Online Publication Date: 8 August 2008

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The radiant energy from high‐intensity xenon flash lamps can be used to anneal damage in semiconductors if the sample is moderately heated before and during the flash. The annealing takes place in air via the solid‐phase epitaxy process in <50 μsec and does not alter doping profiles or result in loss of volatile species.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Low‐temperature migration of Si into Au/Pt thin films on Si substrates with an interposed Cr layer, investigated by two methods of depth analysis

G. M. Mladenov and B. Emmoth

Appl. Phys. Lett. 33, 754 (1978); http://dx.doi.org/10.1063/1.90492 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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By optical detection of excited sputtered particles, depth analysis of a multilayer film on a Si substrate was carried out and low‐temperature migration of Si was studied. For complementary information, Rutherford backscattering analysis of all samples was performed. A comparison between the two methods shows that the optical method is well suited for Si migration studies. As a result, it was found that Si penetrated through a 100‐Å‐thick Cr film into the top metal layers of Pt and Au after heat treatment in the temperature range 350–400 °C. It was also found that a 400‐Å Cr film acted as an effective barrier for Si migration under similar conditions.
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66.30.J- Diffusion of impurities
68.60.-p Physical properties of thin films, nonelectronic
82.80.-d Chemical analysis and related physical methods of analysis

Correlation between process‐induced in‐plane distortion and wafer bowing in silicon

L. D. Yau

Appl. Phys. Lett. 33, 756 (1978); http://dx.doi.org/10.1063/1.90493 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The in‐plane distortion of 3‐in. wafers which went through high‐temperature processing steps was measured directly using the Bell Laboratories electron‐beam exposure system (EBES). The magnitude of the in‐plane distortion obtained from EBES measurements correlates directly with the change in wafer curvature induced by films grown or deposited on the wafer. Additionally, the nature of the in‐plane distortion of wafers processed with an up‐to‐date silicon technology can be linear to within ±1/8 μm.
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65.40.De Thermal expansion; thermomechanical effects
46.32.+x Static buckling and instability
68.60.-p Physical properties of thin films, nonelectronic

Light‐induced motion of misfit dislocations in Ga1−xAlxAs1−yPy‐ GaAs heterojunctions

Takao Fujiwara, Hajime Imai, Nobuyuki Takagi, and Masahito Takusagawa

Appl. Phys. Lett. 33, 759 (1978); http://dx.doi.org/10.1063/1.90494 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Misfit dislocations aligned along the 〈110〉 direction in Ga1−xAlxAs1−yPy‐GaAs heterojunctions are shown to be moved by light irradiation. The motion of the misfit dislocation was observed with photoluminescence topographs and x‐ray topographs. The velocity of the misfit dislocation is very rapid and proportional to the excitation‐light intensity; it is about 2.5 μm/sec per excitation‐light intensity of 100 W/cm2 at 25 °C. Its activation energy for the misfit dislocation motion is estimated to be about 0.26 eV. The rapid velocity and the low activation energy suggest that the misfit dislocations in Ga1−xAlxAs1−yPy‐GaAs heterojunctions may move in the glide motion of the kink segments in it.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.Lw Diffusion of other defects

Effect of native oxide on the interface property of GaAs MIS structures

Norio Suzuki, T. Hariu, and Y. Shibata

Appl. Phys. Lett. 33, 761 (1978); http://dx.doi.org/10.1063/1.90495 (2 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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Interface native oxide has been found to cause anomalous frequency dispersion of capacitance in the accumulation region of n‐GaAs MIS structures. Sputter etching by nitrogen is effective to remove the native oxide layer and obtain normal C‐V characteristics by probably reducing surface‐state density. The present results indicate that native oxide would not be essentially suitable for passivation of GaAs with low surface‐state density.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Charge transfer by surface acoustic waves on a monolithic MIS structure

K. Tsubouchi, T. Higuchi, M. Nagao, and N. Mikoshiba

Appl. Phys. Lett. 33, 762 (1978); http://dx.doi.org/10.1063/1.90496 (4 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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We have observed the minority‐charge signal transferred by surface acoustic waves (SAW) on a monolithic MIS structure. In the Al/ZnO/SiO2/p‐Si system, we have made new improvements on the configuration of input and output gates and the channel‐stop bias ring along the transfer path, and on the method to prepare the deep‐depletion mode by applying the pulse bias at the transfer channel. This type of charge‐transfer device by SAW (monolithic SAW‐CTD) seems to have some advantages compared with the separated‐medium type so far examined.
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72.50.+b Acoustoelectric effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
43.60.-c Acoustic signal processing
85.30.-z Semiconductor devices

Internal electroabsorption in inverted heterostructures: An optical method for probing epitaxial layers

N. Bottka and Marian E. Hills

Appl. Phys. Lett. 33, 765 (1978); http://dx.doi.org/10.1063/1.90497 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Modulation internal electroabsorption was used to determine the gap energies and the presence of interface potentials of multilayered epitaxial n‐n GaAs1−xSbx heterostructures. Experimental results indicate the presence of deep potential wells at the interface between epitaxial layers due to large net density of interface states. In addition to the observed band‐to‐band transitions in the epitaxial layers, it was possible to resolve transitions between filled and empty quantized states at the interface between the two epitaxial layers.
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78.20.Jq Electro-optical effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions

Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling

C. R. Helms, Y. E. Strausser, and W. E. Spicer

Appl. Phys. Lett. 33, 767 (1978); http://dx.doi.org/10.1063/1.90498 (3 pages) | Cited 44 times

Online Publication Date: 8 August 2008

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We have observed, for the first time, a chemical state of silicon different from that of the pure bulk silicon or silicon in SiO2, using Auger electron spectroscopy. In the E N (E) spectra this state gives a major transition at 83.3 eV compared to 90.3 eV for bulk Si and 74.2 eV for SiO2. We have observed this state both at the Si/SiO2 interface of MOS oxide structures during sputter profiling and for thin native oxides without sputtering. The state is difficult to see in the dE N (E)/dE spectra due to the presence of the sharp edge of the free silicon peak at 92 eV which tends to mask it.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Fv Electron impact: Auger emission
71.20.-b Electron density of states and band structure of crystalline solids

’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’

C. E. C. Wood

Appl. Phys. Lett. 33, 770 (1978); http://dx.doi.org/10.1063/1.90499 (3 pages) | Cited 35 times

Online Publication Date: 8 August 2008

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Lead was not detectably incorporated in GaAs during MBE growth above 480 °C, and films grown under massive fluxes of lead show no degradation of material properties. This effect was utilized in the ’’surface exchange’’ n‐type doping of GaAs with S and Se using PbS and PbSe as captive sources. The processes were shown to be efficient and able to produce relatively uncompensated material. 150‐Å‐wide spikes in doping could be easily produced, indicating a very low surface rate limitation to incorporation.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology

Some effects of planar defects near the Si/SiO2 interface on electrical properties of silicon‐on‐sapphire/MOS devices

M. S. Abrahams and W. E. Ham

Appl. Phys. Lett. 33, 773 (1978); http://dx.doi.org/10.1063/1.90500 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Data are presented which show some primary effects of widely different planar defect densities (at the top surfaces of the films) on the electrical properties of silicon‐on‐sapphire/MOS devices. These electrical properties are directly related to the microstructure of the films using transmission electron microscope methods. Both surface mobility and effective surface threshold potential are found to depend strongly on the surface defect density. Specimens having surface densities of 3×104 and 4×105 cm−1 were examined.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.30.De Semiconductor-device characterization, design, and modeling
61.72.Nn Stacking faults and other planar or extended defects

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

A. Gat, L. Gerzberg, J. F. Gibbons, T. J. Magee, J. Peng, and J. D. Hong

Appl. Phys. Lett. 33, 775 (1978); http://dx.doi.org/10.1063/1.90501 (4 pages) | Cited 103 times

Online Publication Date: 8 August 2008

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0.4‐μm‐thick polycrystalline silicon deposited in a low‐pressure CVD reactor was implanted with B to a dose of 5×1014/cm2 and then irradiated in a cw laser scanning apparatus. The laser annealing produced an increase in grain size from ∼500 Å to long narrow crystals of the order of ∼25×2 μ, as observed by TEM. Each grain was found to be defect free and extended all the way to the underlying Si3N4. Electrical measurements show 100% doping activity with a Hall mobility of about 45 cm2/V sec, which is close to single‐crystal mobility at the same carrier concentration. Thermal annealing produces material with an average grain size of 1000 Å and a resistivity higher by a factor of 2.2 than that obtained with the laser anneal. Laser annealing performed after a thermal anneal reduces the resistivity to approximately the same value obtained by laser annealing only.
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72.80.Cw Elemental semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Fr Low-field transport and mobility; piezoresistance
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

An alternative theory of thermal dielectric relaxation in MIM structures

H. M. Gupta

Appl. Phys. Lett. 33, 778 (1978); http://dx.doi.org/10.1063/1.90502 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The theory of thermal dielectric relaxation in MIM structures as proposed by Simmons and Taylor, considering growth of the ’’cathode depletion region’’, does not quantitatively agree with the experimental results. We therefore proposed a new model of thermal dielectric relaxation considering (i) thermal emission of surface traps within a small distance l (≈102 Å) from the interface and (ii) the recombination probability of emitted electrons. The agreement between theoretical and experimental results is satisfactory.
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73.40.Rw Metal-insulator-metal structures
77.22.Gm Dielectric loss and relaxation
73.30.+y Surface double layers, Schottky barriers, and work functions

Josephson logic circuits based on nonlinear current injection in interferometer devices

T. R. Gheewala

Appl. Phys. Lett. 33, 781 (1978); http://dx.doi.org/10.1063/1.90503 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Nonlinear current‐injection switching of Josephson interferometer devices is achieved by current injection into an asymmetric feedpoint. This method of switching interferometers has two important features: higher gain than in previous approaches and a novel nonlinear threshold curve which is of practical interest. A new family of high‐performance logic gates based on nonlinear current injection is described. Logic circuits have been experimentally tested and preliminary results are presented.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
07.50.Ek Circuits and circuit components

A semiempirical stopping‐power formula for use in microprobe analysis

Ryuichi Shimizu and T. E. Everhart

Appl. Phys. Lett. 33, 784 (1978); http://dx.doi.org/10.1063/1.90504 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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A semiempirical method of determining the stopping power of valence electrons in metals and compounds is proposed, so that direct Monte Carlo calculations which take into account individual inelastic electron‐electron collisions can be performed. The method is appliled to aluminum and poly(methylmethacrylate) as examples.
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79.20.Kz Other electron-impact emission phenomena
41.75.Fr Electron and positron beams

Temperature rise induced by a laser beam II. The nonlinear case

M. Lax

Appl. Phys. Lett. 33, 786 (1978); http://dx.doi.org/10.1063/1.90505 (3 pages) | Cited 154 times

Online Publication Date: 8 August 2008

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The steady‐state solution of the nonlinear heat‐conduction equation when the thermal conductivity is strongly temperature dependent is expressed (for arbitrary geometry and heat source) in terms of the corresponding solution for the linear heat‐conduction case. This permits a closed‐form expression for the maximum temperature rise when a Gaussian laser beam hits the surface of a crystal, as well as integral representations for the spatial distribution of the temperature rise. This solution is essential in understanding laser annealing.
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79.20.Ds Laser-beam impact phenomena
44.40.+a Thermal radiation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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