APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Nov 1978

Volume 33, Issue 9, pp. 793-839


An experimental display structure based on reversible electrodeposition

I. Camlibel, S. Singh, H. J. Stocker, L. G. VanUitert, and G. J. Zydzik

Appl. Phys. Lett. 33, 793 (1978); http://dx.doi.org/10.1063/1.90549 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Films of halide complexes of silver can be electrodeposited onto, or removed from, transparent indium tin oxide contacts in less than 10 msec using a clear liquid mixture of dimethyl sulfoxide (DMSO), silver halide, alkali metal halide, and bromine or iodine. The solutions do not attack the contacts, even at high voltages, as long as adequate silver remains in solution. Variations include a mulled mixture of an opacifier and superionic conductor particles in a variety of organic solvents. The electro‐optic properties of experimental display structures are discussed.
Show PACS
78.20.Jq Electro-optical effects
82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis
85.60.Pg Display systems

Intense electron‐beam pinch formation and propagation in rod pinch diodes

R. A. Mahaffey, J. Golden, Shyke A. Goldstein, and G. Cooperstein

Appl. Phys. Lett. 33, 795 (1978); http://dx.doi.org/10.1063/1.90550 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Intense electron‐beam pinches are formed and propagated at relatively high impedance (5–25 Ω) using rod pinch diodes. Pinch propagation of up to 20 cm with 45% efficiency and ion‐generation efficiency ≳15% has been observed.
Show PACS
41.75.Fr Electron and positron beams
52.55.Ez Theta pinch
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

The force of adhesion between solid surfaces in contact

H. M. Pollock, D. Maugis, and M. Barquins

Appl. Phys. Lett. 33, 798 (1978); http://dx.doi.org/10.1063/1.90551 (2 pages) | Cited 17 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
When two elastic solids of known interfacial and surface energies are placed in contact, various types of force are involved. It is shown that both the adhesive force and the peripheral attractive force are equal to one‐half the difference between the apparent Hertz load and the applied load. A simple formula enables values of these forces to be derived.
Show PACS
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
46.55.+d Tribology and mechanical contacts
68.35.Md Surface thermodynamics, surface energies

Measurements of the ion‐expansion structure and velocities from thin‐foil laser‐target interactions

M. A. Gusinow, J. P. Anthes, M. K. Matzen, and D. Woodall

Appl. Phys. Lett. 33, 800 (1978); http://dx.doi.org/10.1063/1.90552 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Energetic 8‐nsec laser pulses were focused on Al, Au, and Cu foils ranging in thickness from 0.1 to 9 μm. The transmitted laser light was recorded and the plasma expansion from the front and back surfaces of these foils was measured using Thomson parabola and Faraday cup diagnostics. Comparison of the front‐ and back‐surface Thomson parabola traces clearly shows the change from ablatively driven behavior to nearly symmetric exploding‐pusher behavior for all of the materials.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Nc Particle measurements

An emulsion dye laser

Kenneth Lee Matheson and James M. Thorne

Appl. Phys. Lett. 33, 803 (1978); http://dx.doi.org/10.1063/1.90553 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A laser dye which is insoluble in water has been dissolved in hexane and emulsified in a water matrix. When pumped with a nitrogen laser, this mixture was observed to lase. The emulsion is superior to a simple hexane solution because the excellent thermo‐optical properties of the water matrix help prevent refractive‐index gradients from degrading laser performance. This is a useful characteristic for flash‐pumped dye lasers, laser‐pumped dye lasers, and liquid filters. Another type of solvent system, a critical solution, is also discussed. For certain dyes, a critical solution has even better thermo‐optical properties because of its ability to absorb heat as it undergoes a liquid‐liquid phase transition.
Show PACS
42.55.Mv Dye lasers

Generation of time‐reversed wave fronts using a resonantly enhanced electronic nonlinearity

D. Grischkowsky, N. S. Shiren, and R. J. Bennett

Appl. Phys. Lett. 33, 805 (1978); http://dx.doi.org/10.1063/1.90554 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Time‐reversed optical wave fronts were generated by degenerate four‐wave mixing in rubidium vapor. An extremely large and resonantly enhanced electronic nonlinearity, described by the adiabatic following (AF) model, was responsible for the mixing. The intensity dependence of the AF nonlinear susceptibility was shown to explain the observed reduction in conversion efficiency at high pumping intensities.
Show PACS
42.65.-k Nonlinear optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Observation of stratospheric ozone layer by a XeCl laser radar

Osamu Uchino, Mitsuo Maeda, Jun‐ichi Kohno, Takashi Shibata, Chikao Nagasawa, and Motokazu Hirono

Appl. Phys. Lett. 33, 807 (1978); http://dx.doi.org/10.1063/1.90535 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We observed the stratospheric ozone layer by a newly designed powerful laser radar using a differential‐absorption technique. A discharge‐pumped XeCl excimer laser with a 308‐nm wavelength was used as an emitter in this system. The observed ozone concentrations in an altitude range 16–25 km are in good agreement with those measured by radiosonde. The present system is promising for the continuous monitoring of the stratospheric ozone concentration because of the simplicity of the construction.
Show PACS
42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects
92.60.Ta Electromagnetic wave propagation
42.60.-v Laser optical systems: design and operation
92.60.H- Atmospheric composition, structure, and properties

Photoacoustic determination of photovoltaic energy conversion efficiency

David Cahen

Appl. Phys. Lett. 33, 810 (1978); http://dx.doi.org/10.1063/1.90536 (2 pages) | Cited 35 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Photoacoustic (i.e., photocalorimetric) measurements on photovoltaic devices can directly yield their energy conversion efficiency. This is illustrated for a Si solar cell, for which case excellent agreement is found with normal electrical measurements. In addition, the photoacoustic spectra under load and at open‐circuit conditions are reported and compared with the cell’s spectral response. Together, such measurements can provide information on the wavelength dependence of the cell performance as well.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

(SN)x‐GaAs polymer‐semiconductor solar cells

Marshall J. Cohen and J. S. Harris

Appl. Phys. Lett. 33, 812 (1978); http://dx.doi.org/10.1063/1.90537 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We report the first solar cell whose junction is formed by a polymer‐semiconductor interface. Open‐circuit voltages, Voc≳0.7 V, have been observed on cells consisting of a thin film of polymeric sulfur‐nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voc commonly measured with metal‐GaAs solar cells. Initial efforts have resulted in efficiencies ≳6% without antireflection coatings.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Single polarization optical fibers: Exposed cladding technique

V. Ramaswamy, I. P. Kaminow, P. Kaiser, and W. G. French

Appl. Phys. Lett. 33, 814 (1978); http://dx.doi.org/10.1063/1.90538 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A simple method is described for fabricating fibers with large strain birefringence starting with standard MCVD preforms. The method is illustrated using borosilicate fibers. The birefringence and polarization properties are measured in a long fiber and the birefringence is also measured using a fiber slice and polarizing microscope.
Show PACS
42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
78.20.Fm Birefringence

Wavelength‐modulation Raman spectroscopy

K. H. Levin and C. L. Tang

Appl. Phys. Lett. 33, 817 (1978); http://dx.doi.org/10.1063/1.90539 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The derivative Raman spectral method using an electro‐optically tuned laser is shown to be highly sensitive, can pick out weak and narrow spectral features hidden in a broad fluorescence background, and, most importantly, can detect extremely small shifts in the peak relative to the linewidth of the Raman‐scattered light.
Show PACS
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
78.30.-j Infrared and Raman spectra
42.60.-v Laser optical systems: design and operation

Tunable blue picosecond pulses from a flashlamp‐pumped dye laser

J. C. Mialocq and P. Goujon

Appl. Phys. Lett. 33, 819 (1978); http://dx.doi.org/10.1063/1.90540 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A flashlamp‐pumped coumarin dye laser mode locked passively with a saturable absorber 3,3′‐dihexyloxacarbocyanine iodide (DOCI) has produced tunable picosecond pulses shorter than 10 ps in the blue region of the spectrum between 475 and 490 nm. A single pulse switched from the train was used for fluorescence lifetime measurements. The excited‐state lifetime τ of DOCI in pure ethyleneglycol was 505±10 ps.
Show PACS
42.55.Mv Dye lasers
42.60.By Design of specific laser systems

Transfer and quenching rate constants for XeF(III,1/2) and XeF(II,3/2)

H. C. Brashears and D. W. Setser

Appl. Phys. Lett. 33, 821 (1978); http://dx.doi.org/10.1063/1.90541 (3 pages) | Cited 29 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Rate constants for transfer between XeF(III,1/2) and XeF(II,3/2) states and quenching of XeF(III,1/2) have been measured using a method which employs the steady‐state photolysis of XeF2. For He, Ne, Ar, Kr, N2, CF4, and SF6 transfer dominates over quenching; for Xe, NF3, CF3Cl, and CF3H quenching and transfer are competitive. Only for F2 is quenching dominant. Based upon the relative emission intensities from XeF(III,1/2) and XeF(II,3/2) at high pressures of buffer gases, XeF(II,3/2) must be 0.08 eV lower in energy than XeF(III,1/2).
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence
82.20.Pm Rate constants, reaction cross sections, and activation energies
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Anisotropic melting and epitaxial regrowth of laser‐irradiated silicon

M. von Allmen, W. Lüthy, and K. Affolter

Appl. Phys. Lett. 33, 824 (1978); http://dx.doi.org/10.1063/1.90542 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Using Nd‐YAG laser pulses in the 100‐μs regime, melting and regrowth of monocrystalline silicon is studied. It is shown that surface melting proceeds preferentially along the crystallographic axes. This leads to a characteristic surface pattern if uniform irradiation slightly above melting threshold is applied. Regrowth under these circumstances is epitaxial.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Oxidation of sputtered molybdenum silicide thin films

Tomoyasu Inoue and Katsuo Koike

Appl. Phys. Lett. 33, 826 (1978); http://dx.doi.org/10.1063/1.90543 (2 pages) | Cited 20 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
An Auger in‐depth analysis and a 350 keV He+ backscattering technique were used to investigate the growth of an SiO2 protective layer and the compositional change in sputtered molybdenum silicide films after oxidation, respectively. Silicon depletion and molybdenum pileup in molybdenum silicide were observed near the SiO2/Mo‐Si interface. The film becomes molybdenum rich with increasing oxidation time. The Si/Mo atomic ratio decreases rapidly in the first 30‐min period and then decreases slowly, nearly proportionally to the square root of the oxidation time. These behaviors are explained by the preferential oxidation of silicon and the reduced silicon present at the SiO2/Mo‐Si interface from the rest of the molybdenum silicide layer.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
61.50.Nw Crystal stoichiometry

Selective annealing of ion‐implanted amorphous layers by Nd3+‐YAG laser irradiation

M. Miyao, M. Tamura, and T. Tokuyama

Appl. Phys. Lett. 33, 828 (1978); http://dx.doi.org/10.1063/1.90544 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Annealing behavior of phosphorus‐implanted silicon layers under Q‐switched Nd3+‐YAG laser irradiation was examined for samples with various dose (1014−1016 cm−2). Annealing efficiency in the implanted layer was found to be strongly influenced by the degree of damage to the substrate, namely, the annealing effect was localized to the amorphous regions. This selective annealing of the amorphous region was explained by the difference in the absorption coefficient of laser energy between crystalline and amorphous silicon.
Show PACS
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Single grain junction studies of ZnO varistors—Theory and experiment

G. D. Mahan, L. M. Levinson, and H. R. Philipp

Appl. Phys. Lett. 33, 830 (1978); http://dx.doi.org/10.1063/1.90545 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Single grain‐grain junction measurements of the current‐voltage characteristic of ZnO ceramic varistors are interpreted in terms of electron transmission through depletion layer barriers at the ZnO grain interface. The highly nonlinear varistor conduction process is associated with an abrupt thinning of the ZnO depletion layer due to valence‐band hole injection when the bottom of the ZnO conduction band in the grain interior drops below the top of the valence band at the grain surface.
Show PACS
72.20.Ht High-field and nonlinear effects
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling

Mechanism of the SIMS matrix effect

V. R. Deline, William Katz, C. A. Evans, and Peter Williams

Appl. Phys. Lett. 33, 832 (1978); http://dx.doi.org/10.1063/1.90546 (4 pages) | Cited 66 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Quantization of ion microprobe mass spectrometric analyses has been complicated by the variation in the ion yield of an element contained in different matrices. This work demonstrates that, for O− and Cs+ bombardment, these ion‐yield variations are solely attributable to variations in the matrix sputtering yield. It is argued that the matrix sputtering yield determines the near‐surface concentration of the ion‐yield‐enhancing species O and Cs.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

GaAlAs diode sources for laser‐Doppler anemometry

E. J. Shaughnessy and F. H. Zu’bi

Appl. Phys. Lett. 33, 835 (1978); http://dx.doi.org/10.1063/1.90547 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A laser‐Doppler anemometer based on a continuous GaAlAs diode laser source is described. It is shown that the coherence length of the diode output requires that the optical design incorporate equal path lengths for good fringe visibility. The results show that Doppler signals of processable quality may be obtained using this compact laser source.
Show PACS
47.80.-v Instrumentation and measurement methods in fluid dynamics
07.60.-j Optical instruments and equipment
42.60.-v Laser optical systems: design and operation

Electrochemichromic cells based on phosphotungstic acid

B. Tell and Sigurd Wagner

Appl. Phys. Lett. 33, 837 (1978); http://dx.doi.org/10.1063/1.90548 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We report a new material for self‐contained all‐solid‐state electrochromic devices with fast response. The material is phosphotungstic acid (PWA) which, at room temperature, is both an electrochromic material and an ionic conductor. Response times of 50 msec have been measured in cells of type M/PWA/SnO2, where M denotes an electrode that provides ions of Ag, Cu, or Li. The cell exhibits memory.
Show PACS
78.20.Jq Electro-optical effects
85.60.Pg Display systems
82.47.-a Applied electrochemistry
66.10.Ed Ionic conduction
FREE

Erratum: Extension to ’’Low‐resistivity ZnCdS films for use as windows in heterojunction solar cells’’

N. Romeo, G. Sberveglieri, and L. Tarricone

Appl. Phys. Lett. 33, 839 (1978); http://dx.doi.org/10.1063/1.90557 (1 page)

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Abstract Unavailable
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
84.60.Jt Photoelectric conversion
99.10.Cd Errata
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close