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15 May 1979

Volume 34, Issue 10, pp. 617-720

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Laser‐generated MHz elastic waves from metallic‐liquid interfaces

R. J. von Gutfeld and H. F. Budd

Appl. Phys. Lett. 34, 617 (1979); http://dx.doi.org/10.1063/1.90637 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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The thermoelastic generation of MHz waves from a three‐layer structure consisting of a transparent substrate with an evaporated metallic film in contact with a liquid is described. Results with laser excitation indicate the magnitude of the strain wave to be strongly dependent on the expansion coefficient of the liquid and thickness of the metal film. The data are compared to a three‐medium one‐dimensional theory. Some practical applications such as nondestructive evaluation are discussed using this structure.
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65.40.De Thermal expansion; thermomechanical effects
62.60.+v Acoustical properties of liquids
43.30.Yj Transducers and transducer arrays for underwater sound; transducer calibration
44.30.+v Heat flow in porous media

A SAW/CCD accumulating correlator

D. L. Smythe, R. W. Ralston, and E. Stern

Appl. Phys. Lett. 34, 620 (1979); http://dx.doi.org/10.1063/1.90638 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A new analog‐signal‐processing device is reported in which a charge‐coupled device (CCD) is coupled to a piezoelectric surface acoustic wave (SAW) delay line across a 300‐nm gap. The CCD samples multiply, accumulate, and read out the cross‐correlation function of two wide‐band SAW input signals which counterpropagate on the delay line. A signal‐processing gain of 30 dB at a bandwidth of 20 MHz has been observed by correlating biphase modulated pseudonoise waveforms of 100‐μs duration in the presence of Gaussian noise. This compact hybrid structure provides 300 discrete samples of a 7‐μs segment of the correlation function.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices

Direct observation of the vacancy structure of depleted zones in tungsten ion irradiated at 10 K

Ching‐Yeu Wei and David N. Seidman

Appl. Phys. Lett. 34, 622 (1979); http://dx.doi.org/10.1063/1.90639 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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The structure of depleted zones (DZ’s) created by the in situ irradiation of tungsten specimens, at 10 K, with 30‐keV W+, Mo+, or Cr+ ions has been studied by field‐ion microscopy. As the mass of the 30‐keV ion was decreased the following observations were made: (1) the spatial extent of the DZ’s increased; (2) the vacancy concentration within the DZ’s decreased; (3) the fraction of isolated monovacancies increased; and (4) subcascades formed within the DZ’s.
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61.80.Jh Ion radiation effects
68.37.Vj Field emission and field-ion microscopy
61.72.jd Vacancies
61.72.jj Interstitials

Quantitative measurements of fast ions from CO2 laser‐produced plasmas

C. Joshi, M. C. Richardson, and G. D. Enright

Appl. Phys. Lett. 34, 625 (1979); http://dx.doi.org/10.1063/1.90640 (3 pages) | Cited 23 times

Online Publication Date: 7 August 2008

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The asymptotic behavior of the fast‐ion energy spectra has been studied by using a Thomson parabola ion spectrometer to analyze ionic species produced by a 10.6‐μm laser‐produced polyethylene plasma. The use of cellulose nitrate film detectors has yielded for the first time quantitative information about the charge state and energy distribution of these high‐energy ions as a function of laser energy and beam polarization.
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52.70.Nc Particle measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.62.-b Laser applications
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Effect of nitrogen‐ion implantation on the unlubricated sliding wear of steel

S. Lo Russo, P. Mazzoldi, I. Scotoni, C. Tosello, and S. Tosto

Appl. Phys. Lett. 34, 627 (1979); http://dx.doi.org/10.1063/1.90641 (3 pages) | Cited 25 times

Online Publication Date: 7 August 2008

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The effect of 30‐keV nitrogen‐ion implantation on the unlubricated sliding wear of type‐38 NCD4 steel has been investigated. The effect of implants is seen to reduce the amount of wear for nitrogen doses above 1017 ions/cm2. The reduction in the wear persists also after removal of a material thickness greater than the penetration depth of the implanted nitrogen ions.
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81.40.Pq Friction, lubrication, and wear
81.90.+c Other topics in materials science (restricted to new topics in section 81)
62.20.Qp Friction, tribology, and hardness
46.55.+d Tribology and mechanical contacts

Interface chemistry of metal‐GaAs Schottky‐barrier contacts

J. R. Waldrop and R. W. Grant

Appl. Phys. Lett. 34, 630 (1979); http://dx.doi.org/10.1063/1.90642 (3 pages) | Cited 107 times

Online Publication Date: 7 August 2008

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A survey of the metal‐semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x‐ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.
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73.40.Ns Metal-nonmetal contacts
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Electron trapping in neutron transmutation doped silicon

L. J. van Ruyven and C. A. J. Ammerlaan

Appl. Phys. Lett. 34, 632 (1979); http://dx.doi.org/10.1063/1.90643 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The isochronal anneal of phosphorus in neutron transmutation doped silicon has been studied with electron paramagnetic resonance. It was found that the fraction of phosphorus atoms occupying a substitutional lattice site increases almost linearly in the range of anneal temperatures from 250 to 700 °C. Recovery of the Fermi level to the normal n‐type position is observed to occur between 500 and 700 °C. It is proposed that phosphorus atoms are constitutent parts of the electron trapping centers, capable of trapping two electrons.
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72.80.Cw Elemental semiconductors
61.72.U- Doping and impurity implantation
76.30.Mi Color centers and other defects

Calculation of the dynamics of surface melting during laser annealing

C. M. Surko, A. L. Simons, D. H. Auston, J. A. Golovchenko, R. E. Slusher, and T. N. C. Venkatesan

Appl. Phys. Lett. 34, 635 (1979); http://dx.doi.org/10.1063/1.90619 (3 pages) | Cited 66 times

Online Publication Date: 7 August 2008

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We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid and liquid are included. We compare this calculation with experimental results for the time duration of the melted surface for crystalline Si and Ge. The temperature of the liquid surface as a function of time is calculated and effects associated with the hot liquid and the vapor are also discussed.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx Metals, semimetals, and alloys

High optical power density emission from a ’’window‐stripe’’ AlGaAs double‐heterostructure laser

H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Iwamoto, I. Hino, and I. Hayashi

Appl. Phys. Lett. 34, 637 (1979); http://dx.doi.org/10.1063/1.90620 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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Extremely high optical power density emission (107 W/cm2) was achieved with a new Zn‐diffused ’’window‐stripe’’ laser by eliminating the restriction of the catastrophic optical mirror damage (COMD). The maximum available optical power was at least one order of magnitude higher than the COMD threshold in conventional structures. Furthermore, gradual degradation due to the mirror oxidation has been reduced significantly under cw operation.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Preparation of n‐type semiconducting Ge20Bi10Se70 glass

Noboru Tohge, Yoshitaka Yamamoto, Tsutomu Minami, and Masami Tanaka

Appl. Phys. Lett. 34, 640 (1979); http://dx.doi.org/10.1063/1.90621 (2 pages) | Cited 50 times

Online Publication Date: 7 August 2008

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Chalcogenide bulk glasses exhibiting n‐type conduction were first prepared by quenching the melts of mixtures of Ge, Se, and Bi2Se3 or Bi. The conditions for obtaining homogeneous glasses were examined, and measurements of resistivity and thermoelectric power were carried out on Ge20Bi10Se70 glass, one of the typical n‐type semiconducting glasses in the system Ge‐Bi‐Se. The results indicated that the electrical properties of homogeneous glasses were slightly affected by the difference in starting materials, and the resistivity and thermoelectric power were about 3×107 Ω cm and −1.4 mV/K at room temperature, respectively.
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72.80.Ng Disordered solids
72.20.Pa Thermoelectric and thermomagnetic effects
81.05.Kf Glasses (including metallic glasses)

Electrical characteristics of the plasma‐grown native‐oxide/GaAs interface

T. Mimura, N. Yokoyama, and M. Fukuta

Appl. Phys. Lett. 34, 642 (1979); http://dx.doi.org/10.1063/1.90622 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Some basic features of the electronic properties of the plasma‐grown native‐oxide/GaAs interface have been investigated using transient current measurements on MOSFET structures. One of the most striking results is that injection and subsequent trapping in the native oxide is the mechanism responsible for a reduction in the amount of conduction electrons induced at the interface. The initial phase of stored electron decay is due to backtunneling from electron‐trapping centers in the particular oxide region near the interface. The final phase of decay is caused by detrapping from a 0.60‐eV Frenkel‐Poole center in the oxide bulk.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.-c Electronic transport in interface structures
72.80.Ey III-V and II-VI semiconductors

Low‐current‐threshold strip‐buried‐heterostructure lasers with self‐aligned current injection stripes

W. T. Tsang, R. A. Logan, and J. P. van der Ziel

Appl. Phys. Lett. 34, 644 (1979); http://dx.doi.org/10.1063/1.90623 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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A modified strip‐buried‐heterostructure (SBH) laser is described where the LPE growth process self‐aligns the current‐confining stripes with the active GaAs strips. With these lasers current thresholds have been reduced from ∼180 mA in previous SBH laser to ∼70 mA for active GaAs strips of 380×10×0.2 μm. Excellent linearity in light‐current characteristics and symmetry in laser output from both mirrors were obtained under both pulsed and cw operations. cw operation has been achieved at heat‐sink temperature as high as 115 °C. The current thresholds Ith have an exponential variation with temperature of the form Ith∝exp(T/T0) where T0 was 110 °K. Relaxation oscillation and self‐pulsation was not observed for lasers with clean transverse modes in pulsed response up to current injection levels as high as 4Ith.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

The effects of processing stresses on residual degradation in long‐lived Ga1−xAlxAs lasers

A. R. Goodwin, P. A. Kirkby, I. G. A. Davies, and R. S. Baulcomb

Appl. Phys. Lett. 34, 647 (1979); http://dx.doi.org/10.1063/1.90624 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Oxide‐insulated stripe‐geometry double‐heterostructure lasers have been lifetested continuously for periods up to 25 000 h. Degradation occurred in two stages, an initial stage lasting several thousand hours and a final stage, characterized by rates of threshold increase of 0–6 and 1–2%/kh, respectively. The dominant stress in these lasers is caused by the insulating oxide film. The magnitude of the stress was found to vary considerably depending on the detailed shape of the oxide profile and thickness. Good correlation was found between stress magnitude and initial residual degradation rate. It is concluded that for reliable laser performance processing stresses must not exceed 1×108 dyn cm−2 in the active region.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Near‐infrared noncritically phase‐matched second‐harmonic generation in KNbO3

P. Günter

Appl. Phys. Lett. 34, 650 (1979); http://dx.doi.org/10.1063/1.90618 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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Noncritical type‐I phase matching at room temperature has been observed in KNbO3 for λpm=860 nm using the nonlinear optical coefficient d32=−40‖d11 (SiO2) ‖. By increasing the crystal temperature up to 180 °C the phase‐matching wavelength is increased to λpm=950 nm. At room temperature the efficiency for second‐harmonic generation was 15% for a power density Iω =0.5 MW/cm2 of the fundamental and for a crystal length l=5.74 mm.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
42.79.-e Optical elements, devices, and systems
78.20.Fm Birefringence

Saturable absorption effects in the self‐pulsing (AlGa)As junction laser

Thomas L. Paoli

Appl. Phys. Lett. 34, 652 (1979); http://dx.doi.org/10.1063/1.90625 (4 pages) | Cited 27 times

Online Publication Date: 7 August 2008

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The steady‐state rate equations for a junction laser containing a saturable optical loss are analyzed in terms of parameters typical of contemporaory stripe‐geometry (AlGa)As lasers. The analysis reveals that under conditions which produce self‐induced intensity pulsations the steady‐state power output may also exhibit a bistability or hysteresis over a small range of current in the vicinity of threshold. Experimental observations made with (AlGa)As double‐heterostructure lasers reveal that a nearly discontinuous behavior in the laser’s output characteristic is, in fact, sometimes associated with the self‐induced pulsations.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Alkali‐metal resonance‐line lasers based on photodissociation

D. J. Ehrlich and R. M. Osgood

Appl. Phys. Lett. 34, 655 (1979); http://dx.doi.org/10.1063/1.90626 (4 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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We report on a series of new lasers involving transitions in Na, K, Rb, and Cs. Pulsed output powers of 1–10 kW have been obtained on the alkali‐metal resonance lines. Details of the photodissociative excitation process have been studied in order to optimize these lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
33.60.+q Photoelectron spectra

The electronic structure of HgCl and HgBr

W. R. Wadt

Appl. Phys. Lett. 34, 658 (1979); http://dx.doi.org/10.1063/1.90627 (3 pages) | Cited 42 times

Online Publication Date: 7 August 2008

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Ab initio configuration interaction calculations using effective core potentials are presented for the low‐lying electronic states of HgCl and HgBr. The B→X laser wavelengths and vibrational constants for the B and X states are in very good agreement with experiment. The equilibrium separations (Re) for the B and X states in HgCl (HgBr) are found to be 2.42 (2.61 Å) and 2.93 Å (3.04 Å), respectively. The purely electronic radiative lifetime for the B state in HgCl (HgBr) is calculated to be 27.5 ns (27.6 ns). The mixing of ionic and covalent character in the X and B states and its effect on the R dependence of the transition moment is discussed briefly. Finally, the possibility of self‐absorption is considered.
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31.50.Df Potential energy surfaces for excited electronic states
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.55.+b Optical activity and dichroism
33.57.+c Magneto-optical and electro-optical spectra and effects

Stimulated spin‐flip Raman scattering in a Pb0.88Sn0.12Te single crystal

K. Yasuda and J. Shirafuji

Appl. Phys. Lett. 34, 661 (1979); http://dx.doi.org/10.1063/1.90628 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Stimulated spin‐flip Raman emission assisted by resonance enhancement has been observed in an n‐type Pb0.88Sn0.12Te single crystal pumped by a TE CO2 laser. The wavelength of the Stokes emission can be tuned in a range from 10.8 to 11.8 μm for the pumping wavelength at 10.54 μm in the magnetic field range between 8 and 40 kG. The effective g value, when a magnetic field is applied along the 〈100〉 axis, is from 50 to 64, depending on the magnetic field. The intensity of the Stokes emission is strongly dependent upon the magnetic field.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

The CdTe/HgTe superlattice: Proposal for a new infrared material

J. N. Schulman and T. C. McGill

Appl. Phys. Lett. 34, 663 (1979); http://dx.doi.org/10.1063/1.90629 (3 pages) | Cited 146 times

Online Publication Date: 7 August 2008

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We propose a new material which could be useful in a number of infrared optoelectronic devices. The material consists of alternating (100) layers of CdTe and HgTe. The band gap of this superlattice is adjustable from 0 to 1.6 eV depending on the thicknesses of the CdTe and HgTe layers. Details of the band‐gap variation and the character of the band‐edge states are presented.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.-c Electronic transport in interface structures
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

A near‐infrared fiber Raman oscillator tunable from 1.07 to 1.32 μm

Chinlon Lin and W. G. French

Appl. Phys. Lett. 34, 666 (1979); http://dx.doi.org/10.1063/1.90630 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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We report a near‐infrared fiber Raman oscillator in the 1.1–1.3‐μm spectral region. The Raman medium is an 800‐m‐long 6.3‐μm‐core‐diam single‐mode fiber with a loss less than 2 dB/km near 1.2 μm and less than 4 dB/km over the 1–1.32‐μm spectral range. The oscillator is synchronously pumped by a cw mode‐locked Nd : YAG laser. With four separate resonator mirrors, four orders of Stokes oscillations, peaked near 1.12, 1.18, 1.24, and 1.31 μm, are obtained. With simultaneous tuning of all the four Stokes wavelengths we have achieved continuously tunable oscillation over 250 nm (1.07–1.32 μm), the first such broadly tunable laser in this spectral range.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.-j Infrared and Raman spectra
42.81.-i Fiber optics

Aging characteristics of Ga1−xAlxAs double‐heterostructure lasers bonded with gold eutectic alloy solder

K. Fujiwara, T. Fujiwara, K. Hori, and M. Takusagawa

Appl. Phys. Lett. 34, 668 (1979); http://dx.doi.org/10.1063/1.90631 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Aging characteristics of Ga1−xAlxAs DH lasers bonded with gold eutectic alloy solder and indium solder were studied. In the lasers bonded with indium solder, it was found that thermal resistance increased during the aging test and the activation energy for the increasing rate of thermal resistance was 0.6 eV. Sixteen lasers bonded with gold‐tin eutectic alloy solder have been operating at 70 °C over 1800 h with no increase in thermal resistance and a slight increase in the driving current required to maintain the cw optical power constant during the aging test; and lasers bonded with gold‐germanium eutectic alloy solder have been operating at 70 °C over 10 000 hours with a slight increase in driving current. The use of gold eutectic alloy solder makes possible the long‐lived lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Delay measurement of experimental 2.5‐μm Josephson current injection logic (CIL)

T. R. Gheewala

Appl. Phys. Lett. 34, 670 (1979); http://dx.doi.org/10.1063/1.90632 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Switching speeds of experimental Josephson interferometer circuits are measured on chains of current injection logic (CIL) gates fabricated using 2.5‐μm minimum features. Logic delay of 32 ps per gate is measured for a four‐input OR gate with a fan‐out of 2. The average power dissipation of the four‐input OR gate is 4 μW and the corresponding power‐delay product is 1.28×10−16 J. For four‐input AND gates the measured logic delay is 60 ps, the power dissipation is 6 μW, and the power‐delay product is 3.6×10−16 J. The results are found to be in excellent agreement with estimates based on computer simulations.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Measurements of refractive‐index dispersion by optical waveguiding

Keiji Tanaka

Appl. Phys. Lett. 34, 672 (1979); http://dx.doi.org/10.1063/1.90633 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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A technique for measuring the refractive‐index dispersion in light‐guiding thin films by means of the prism‐coupling method is reported. A collimated polychromatic light beam is employed, and the wavelength dependence of synchronous angles is determined spectroscopically. A representative experiment performed on an amorphous specimen reveals its usefulness for investigating the detailed dispersion characteristics of thin films with accuracies better than 0.001.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.82.-m Integrated optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers

High‐average‐power 16‐μm gasdynamic CO2 laser using a multipass cavity

B. L. Wexler and R. W. Waynant

Appl. Phys. Lett. 34, 674 (1979); http://dx.doi.org/10.1063/1.90634 (4 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The performance of the 16‐μm CO2 electric discharge gasdynamic laser has been investigated as a function of gas flow rates and the position of the optical axis. Using a five‐pass optical cavity configuration and a high pulse repetition rate, a significant fraction of the energy available in the flow has been extracted. With the laser operating on both the 9.4‐ and 16‐μm transitions in cascade, the maximum average output power at 16 μm was 5.4 W at 4800 Hz. Comparison with the 19.7 W generated at 9.4 μm indicates a 70% efficiency for the cascade process.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
28.60.+s Isotope separation and enrichment

Measurement of thin‐film optical absorption at the air‐film interface within the film and at the film‐substrate interface

P. A. Temple

Appl. Phys. Lett. 34, 677 (1979); http://dx.doi.org/10.1063/1.90635 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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A measurement technique is described where the absorption introduced by the addition of a single‐layer thin film is separated into three parts: absorption (a) within the bulk of the film; (b) at the air‐film interface; (c) at the film‐substrate interface. The technique employs a scanning adiabatic calorimeter to measure substrates which are partially coated on the entrance surface with films of continuously varying thickness. By measuring the absorption on the bare substrate and at various film thicknesses, and by making use of changes in relative power density within the film for λ/4 versus λ/2 optical thickness films, we have determined (a) αf, the bulk absorption coefficient of the film, (b) aaf, the specific absorptance of the air‐film interface, and (c) afs, the specific absorptance of the film‐substrate interface. The analysis assumes that the films are highly transparent and of known index of refraction. In addition, the film thickness must range from λ/4 to 3λ/4 optical thickness, or from λ/2 to λ optical thickness. Representative data are shown for absorptance measurements at 2.7 and 2.9 μm for a film of As2Se3 on CaF2. This example exhibits predominantly film‐substrate interface absorption with very little of the absorption taking place in the bulk of the film.
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68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
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