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15 May 1979

Volume 34, Issue 10, pp. 617-720

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Optical properties of ultrathin PbO layers grown on Pb films

E. P. Harris, P. S. Hauge, and C. J. Kircher

Appl. Phys. Lett. 34, 680 (1979); http://dx.doi.org/10.1063/1.90636 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The optical properties of ultrathin (2–7 nm) oxide layers grown on Pb films have been measured by spectroscopic ellipsometry over the 1.4–5.4‐eV photon energy range. The shape of the dielectric function resembles published measurements made on much thicker evaporated layers of orthorhombic PbO, but with the absorption edge shifted downward in energy by about 0.6 eV. The band gap in our case is estimated to be 2.8 eV from the theory of direct allowed transitions.
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78.20.-e Optical properties of bulk materials and thin films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Tv Optical and dielectric properties related to treatment conditions
68.60.-p Physical properties of thin films, nonelectronic

Infrared‐microwave double resonance of NH3 using a tunable diode laser

Michio Takami

Appl. Phys. Lett. 34, 682 (1979); http://dx.doi.org/10.1063/1.90644 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Infrared‐microwave (IR‐MW) double resonance was demonstrated on the ν2 sQ (3,3) line of NH3 using a tunable diode laser. The laser beam was focused into a waveguide cell. The double‐resonance effect was observed as a variation of infrared absorption when the J=K=3 inversion line of NH3 was saturated in the ground vibrational state. At low pressure the signal reversed its sign, indicating saturation of the infrared transition by the laser. Application of the technique to microwave spectroscopy of vibrationally excited molecules is discussed.
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33.40.+f Multiple resonances (including double and higher-order resonance processes, such as double nuclear magnetic resonance, electron double resonance, and microwave optical double resonance)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
33.20.Ea Infrared spectra
33.20.Bx Radio-frequency and microwave spectra

Facet protection of (AlGa)As lasers using SiO2 sputter deposition

Tonao Yuasa, Kenji Endo, Toshitaka Torikai, and Hiroo Yonezu

Appl. Phys. Lett. 34, 685 (1979); http://dx.doi.org/10.1063/1.90645 (3 pages) | Cited 7 times

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Sputter‐deposited SiO2 films on (AlGa)As DH laser facets were found by chemical erosion tests and Auger spectroscopy to have strong adhesion and an abrupt film‐facet interface profile. Half‐wave coatings by sputtering allowed stable long‐term operation of lasers over several thousand hours at 10–20‐mW (0.7–1.2 mW/μm) power levels at room temperature, almost without change from the initial value of threshold current and optical power.
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42.62.-b Laser applications
42.55.Px Semiconductor lasers; laser diodes
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

The fabrication of Schottky‐barrier solar cells by electroless nickel plating

Juh Tzeng Lue

Appl. Phys. Lett. 34, 688 (1979); http://dx.doi.org/10.1063/1.90605 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Fabrication of Schottky‐barrier solar cells by electroless nickel plating can be recognized as a practical approach because cells made by this method are of lower cost, have good adhesion to the surface, higher barrier potential height, and lower reflectivity of light as compared with those of the vacuum‐evaporated devices. No expensive equipment, such as a vacuum evaporator or high‐temperature diffusion oven, is needed for this manufacture.
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72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
84.60.Jt Photoelectric conversion

Laser irradiation of silicon containing misfit dislocations

W. K. Hofker, D. P. Oosthoek, G. E. J. Eggermont, Y. Tamminga, and W. T. Stacy

Appl. Phys. Lett. 34, 690 (1979); http://dx.doi.org/10.1063/1.90606 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Silicon containing misfit dislocations caused by ion implantation and thermal annealing were irradiated with a scanning Q‐switched Nd‐YAG laser. It was found that misfit dislocations can be removed completely. It was established that this removal is thermally stable. Evidence for a melting‐resolidification mechanism was observed. The thermally stable removal of misfit dislocations is discussed in terms of this mechanism.
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

The crystal orientation dependence of multiplication noise in germanium avalanche photodiodes

T. Kaneda, T. Mikawa, Y. Toyama, and H. Ando

Appl. Phys. Lett. 34, 692 (1979); http://dx.doi.org/10.1063/1.90607 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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We present the first study of multiplication noise for three orientations of electric field in germanium avalanche photodiodes (APD’s). The directional differences of noise are found to be rather weak by the measurements using a He‐Ne laser (6328 Å). The differences obtained, 0.5 dB, were comparable in value to the experimental errors.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Capacitance measurements on organic‐semiconductor Schottky barriers—A new approach

Zoran D. Popovic

Appl. Phys. Lett. 34, 694 (1979); http://dx.doi.org/10.1063/1.90608 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Schottky‐barrier parameters of an organic‐semiconductor thin‐film cell have been determined by a capacitor discharge method which is appropriate for systems where high resistance, trapping, and/or slow impurity ionization dynamics may prevent the use of conventional measurement techniques.
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07.50.-e Electrical and electronic instruments and components
07.55.-w Magnetic instruments and components
73.30.+y Surface double layers, Schottky barriers, and work functions

Auger profile study of the influence of lattice mismatch on the LPE InGaAsP‐InP heterojunction interface

M. Feng, L. W. Cook, M. M. Tashima, G. E. Stillman, and R. J. Blattner

Appl. Phys. Lett. 34, 697 (1979); http://dx.doi.org/10.1063/1.90609 (3 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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Auger depth profiles of InGaAsP‐InP heterojunctions grown by liquid phase epitaxial techniques under different lattice‐mismatch conditions have been measured. Results are presented for samples with Δa/a less than ±0.03, and equal to +0.20 and −0.11% grown from solutions with XlGa=0.40%, XlP=0.36%, and XlAs=3.53, 3.78, and 3.40%, respectively. Only small differences in the chemical transition width of InP‐InGaAsP and InGaAsP‐InP interfaces (the last grown layer is listed first) have been observed when the lattice mismatch is less than ±0.03%. However, the width of the chemical transition region of the InP‐InGaAsP interface increases more rapidly than that of the InGaAsP‐InP interface as the lattice mismatch increases. This result can be understood in terms of the growth kinetics at the heterojunction interfaces.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
73.40.-c Electronic transport in interface structures

Thin‐film GaAs solar cells with grain‐boundary edge passivation

S. K. Ghandhi, J. M. Borrego, D. Reep, Y‐S. Hsu, and K. P. Pande

Appl. Phys. Lett. 34, 699 (1979); http://dx.doi.org/10.1063/1.90610 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Solar cells built on polycrystalline gallium arsenide usually have very leaky reverse characteristics and low open circuit voltage. Both these problems arise from the effect of the Schottky diode made on the grain boundary, which shunts the active Schottky solar cell and deteriorates its performance characteristics. Selective anodization techniques have been used to provide an insuating barrier over the grain boundary in order to passivate it. Leakage current reduction of five to six decades has been achieved by this method. In this letter we describe the electrical and photovoltaic characteristics of devices made by this technique. We report, for the first time, a simulated AM1 conversion efficiency of 5.45% on thin‐film (8.6 μm) polycrystalline GaAs cells with no antireflection coating, fabricated on molybdenum substrates by the simultaneous pyrolysis of trimethylgallium and arsine in hydrogen.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.-b Surface treatments

Diffusion of Cd acceptors in InP and a diffusion theory for III‐V semiconductors

P. K. Tien and B. I. Miller

Appl. Phys. Lett. 34, 701 (1979); http://dx.doi.org/10.1063/1.90611 (4 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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See Also: Erratum

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In the interest of developing InP technology for optoelectronic devices, we report a method of diffusing Cd into InP using CdP2 and P as the source. The method provides an acceptor concentration p=1018–1019 cm−3, a diffusion depth controllable by the amount of P used in the source, and a steep diffusion front suitable to the formation of abrupt p‐n junctions. We have also analyzed kinetics of diffusion and present a theory which explains the anomalous behavior of diffusion profiles observed in the experiments.
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81.40.Gh Other heat and thermomechanical treatments
82.20.-w Chemical kinetics and dynamics
85.60.Jb Light-emitting devices
85.30.Hi Surface barrier, boundary, and point contact devices

Electronic defect levels in self‐implanted cw laser‐annealed silicon

N. M. Johnson, R. B. Gold, and J. F. Gibbons

Appl. Phys. Lett. 34, 704 (1979); http://dx.doi.org/10.1063/1.90612 (3 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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Electronic defect levels in self‐implanted cw Ar‐laser‐annealed silicon have been measured by deep‐level transient spectroscopy. The electron emission spectrum is dominated by two levels near the middle of the silicon forbidden energy band with activation energies of ∼0.49 and 0.56 eV. These levels can be spatially resolved in the depletion layer of Schottky diodes due to a more rapid decrease with distance in the density of the shallower level. In samples receiving a 450 °C furnace anneal (after laser irradiation) an additional level appears at 0.28 eV; the defect density is shown to decrease monotonically with depth into the silicon substrate.
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78.40.Fy Semiconductors
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation

Cross‐shaped proximity‐effect bridge

Tadayuki Kobayashi, Koji Nakajima, Tsutomu Yamashita, and Yutaka Onodera

Appl. Phys. Lett. 34, 707 (1979); http://dx.doi.org/10.1063/1.90613 (2 pages)

Online Publication Date: 7 August 2008

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A superconducting bridge, based on the proximity effect, consisting of four superconductors coupled together through a weakly superconducting cross‐shaped region is fabricated in a Nb/Ta thin film by means of photolithographic and anodization techniques. The experimental results of the bridge are interpreted in a simple equivalent circuit model.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
89.90.+n Other topics in areas of applied and interdisciplinary physics (restricted to new topics in section 89)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

A simple high‐performance current‐switched Josephson gate

T. A. Fulton, S. S. Pei, and L. N. Dunkleberger

Appl. Phys. Lett. 34, 709 (1979); http://dx.doi.org/10.1063/1.90614 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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A versatile current‐switched gate is described which consists of two Josephson tunnel junctions and a small resistor in a loop. The directly combined bias and control currents flow through one junction in the zero‐voltage state, causing the switching. The second junction and the resistor provide isolation between input and output after switching. The switching speed of a few tens of picoseconds and the microwatt power dissipation are comparable to those of other present designs. The design is particularly simple, compact, and easy to fabricate.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Arrays of superconducting tunnel junctions as low‐noise 10‐GHz mixers

S. Rudner and T. Claeson

Appl. Phys. Lett. 34, 711 (1979); http://dx.doi.org/10.1063/1.90615 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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Quasiparticle mixing (biasing at the gap voltage) was studied in arrays of small Pb‐O‐Pb tunnel junctions. Coherent mixing at 9 GHz gave a conversion loss as low as −5.8 dB and a single sideband mixer noise temperature of 10–40 K. The optimal conversion efficiency was obtained where the bias current microwave response was maximal. The arrays of junctions were rugged, and gave a good impedance match to external circuitry.
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74.50.+r Tunneling phenomena; Josephson effects
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.25.-j Superconducting devices

Residual stacking‐fault‐type contrast in silicon after apparent unfaulting reactions

T. Y. Tan

Appl. Phys. Lett. 34, 714 (1979); http://dx.doi.org/10.1063/1.90616 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Faint residual fringe contrast was observed in some regions of stacking faults (SF) in Si for which unfaulting reactions had apparently occurred. This phenomenon is attributed to an error which occurred in the apparent unfaulting process. Such an error produces, for the simplest case, a four‐atom‐layer‐thick region on the {111} which was twinned and may also be regarded as normal {111} layers of matrix material containing an intrinsic‐extrinsic SF pair. Thus, no normal SF contrast was observed; instead, the small twin boundary dilations produced the SF‐like faint fringe contrast. Twin reflections were observed from such material regions.
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61.72.Nn Stacking faults and other planar or extended defects
61.72.Mm Grain and twin boundaries
61.72.Yx Interaction between different crystal defects; gettering effect

The mechanism of optically induced degradation in InP/In1−xGaxAsyP1−y heterostructures

S. Mahajan, W. D. Johnston, M. A. Pollack, and R. E. Nahory

Appl. Phys. Lett. 34, 717 (1979); http://dx.doi.org/10.1063/1.90617 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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Optically degraded regions in In1−xGaxAsyP1−y layers, grown on (001) InP substrates by liquid phase epitaxy, have been examined in detail by transmission electron microscopy. It is shown that these areas are associated with dislocation clusters or bundles which are aligned parallel to the 〈100〉 directions. We conclude that the observed features develop by nonradiative‐recombination‐enhanced glide of threading and inclusion‐generated dislocations present in the layers.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Tv Optical and dielectric properties related to treatment conditions
FREE

Erratum: Cold‐working Nb3Al in the bcc structure and then converting to the A‐15 structure

G. W. Webb

Appl. Phys. Lett. 34, 720 (1979); http://dx.doi.org/10.1063/1.90894 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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74.70.-b Superconducting materials other than cuprates
74.25.-q Properties of superconductors
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
99.10.Cd Errata
FREE

Erratum: Observation of transverse and longitudinal modes in non‐neutral electron clouds confined in a magnetic mirror

Shimon Eckhouse, Amnon Fisher, and Norman Rostoker

Appl. Phys. Lett. 34, 720 (1979); http://dx.doi.org/10.1063/1.90895 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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43.38.Dv Electromagnetic and electrodynamic transducers
46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.30.+d Mechanical and elastic waves; vibrations
99.10.Cd Errata
FREE

Erratum: Reductions in static fatigue of silica fibers by hermetic jacketing

D. A. Pinnow, G. D. Robertson, and J. A. Wysocki

Appl. Phys. Lett. 34, 720 (1979); http://dx.doi.org/10.1063/1.90896 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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42.81.-i Fiber optics
99.10.Cd Errata
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