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1 Jun 1979

Volume 34, Issue 11, pp. 725-813

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Monolithic (ZnO) Sezawa‐mode pn‐diode‐array memory correlator

F. C. Lo, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 34, 725 (1979); http://dx.doi.org/10.1063/1.90672 (2 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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The available bandwidth for a monolithic ZnO pn‐diode memory correlator can be significantly increased by employing a thicker ZnO film which adapts the device to the Sezawa mode of operation. Herein we report the first Sezawa‐mode pn‐diode‐array memory correlator and describe its operating characteristics. The device displays a 3‐dB bandwidth of 20 MHz at a center frequency of 164 MHz; storage times are on the order of tens of milliseconds.
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
81.15.Cd Deposition by sputtering

Sublimation of ionic crystals in the presence of an electrical field

M.José Yacamán, Z. A. Munir, T. Ocaña, and J. P. Hirth

Appl. Phys. Lett. 34, 727 (1979); http://dx.doi.org/10.1063/1.90673 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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A direct observation of the influence of an externally applied electrostatic field on the sublimation steps on (100) surfaces of KCl is reported. Typically, round‐cornered square spirals were found to be distorted into round‐cornered rhombical spirals in the presence of a field. The results are interpreted in terms of charged kinks on the surface.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Prediction of anelastic loss in piezoelectric solids: Effect of geometry

Roderic S. Lakes

Appl. Phys. Lett. 34, 729 (1979); http://dx.doi.org/10.1063/1.90674 (2 pages)

Online Publication Date: 7 August 2008

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The anelastic loss of a piezoelectric material is calculated from its complex dielectric and piezoelectric coefficients. This loss is found to be dependent on specimen geometry. It is shown that neglect of the out‐of‐phase piezoelectric modulus, as in earlier analyses, leads to an overestimate of the anelastic loss.
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77.65.-j Piezoelectricity and electromechanical effects
46.35.+z Viscoelasticity, plasticity, viscoplasticity
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

High‐current‐density relativistic electron beams in conical diodes

P. Gilad, E. Nardi, and Z. Zinamon

Appl. Phys. Lett. 34, 731 (1979); http://dx.doi.org/10.1063/1.90675 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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Current densities of 20 MA/cm2 are obtained in the focus of a modest (450 kV, 60 kA) beam in a conical ’’parapotential’’ diode. The electron flow in the diode is studied using pinhole photography and bremsstrahlung angular distribution measurements.
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52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)

Characterization of light emission from amorphous chalcogenide switches

P. J. Walsh, D. Pooladdej, M. J. Thompson, and J. Allison

Appl. Phys. Lett. 34, 733 (1979); http://dx.doi.org/10.1063/1.90676 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Narrow‐bandwidth infrared radiation has been detected from amorphous As50Te50 threshold switches in the ’’on’’ state of thin parallel plane devices which possess optical feedback. The radiation has a fast rise time and is dependent on a minimum threshold ’’on’’ current which is independent of device area. The radiation output is substantially independent of device temperature and is thus not thermally activated. The output is not observed in heterojunction devices which have little optical feedback.
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42.55.Px Semiconductor lasers; laser diodes
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.30.+h Metal-insulator transitions and other electronic transitions

Lattice constants and band‐gap variations of the pentenary semiconductor system Cu1−yAgyInS2(1−x)Se2x

G. H. Chapman, J. Shewchun, J. J. Loferski, B. K. Garside, and R. Beaulieu

Appl. Phys. Lett. 34, 735 (1979); http://dx.doi.org/10.1063/1.90677 (3 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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Much interest has been expressed in the ternary IB‐III‐VI2 group semiconductors for use in electro‐optical devices such as solar cells. Subsets of these, AgInS2, AgInSe2, CuInS2, and CuInSe2, have been combined to form the pentenary alloy system Cu1−yAgyInS2(1−x)Se2x. With such an alloy the band gap may be varied while keeping the lattice constant fixed. Samples were prepared by reacting stoichiometric powder mixtures at about 900 °C. X‐ray diffractometry tests suggest the alloys maintained complete solid solubility throughout the system in a chalcopyrite‐type crystal structure. From cathodoluminescence studies on pressed bars of these powders the band‐gap energies were estimated at 300 °K. These tests suggest that the alloys are all direct‐band‐gap semiconductors.
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61.66.Dk Alloys
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
81.05.Bx Metals, semimetals, and alloys

Pulsed‐laser annealing of ion‐implanted polycrystalline silicon films

C. P. Wu and C. W. Magee

Appl. Phys. Lett. 34, 737 (1979); http://dx.doi.org/10.1063/1.90678 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Polysilicon films, about 0.6 μm thick, deposited on SiO2 grown on silicon substrates, were implanted with different doses of 11B, 31P, or 75As ions and laser annealed with a Q‐switched Nd‐glass or ruby laser. It was found that complete activation of the implanted dopant ions could be achieved with a pulse power density as low as 16 MW/cm2, that a two to three times reduction of resistivity could be achieved in implanted polysilicon films compared with samples thermally annealed, and that there were little or no redistributions of the implanted profiles.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Cw Elemental semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer

Y. Katayama, Y. Shiraki, K. L. I. Kobayashi, K. F. Komatsubara, and N. Hashimoto

Appl. Phys. Lett. 34, 740 (1979); http://dx.doi.org/10.1063/1.90655 (2 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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An MOS field‐effect transistor which has a buried channel structure and operates in the depletion mode is first fabricated on a molecular‐beam epitaxial silicon layer. The field‐effect mobility of this MOSFET is comparable to those of the MOSFET’s fabricated on conventional single crystals of silicon.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices

Arsenic incorporation in native oxides of GaAs grown thermally under arsenic trioxide vapor

G. P. Schwartz, J. E. Griffiths, D. DiStefano, G. J. Gualtieri, and B. Schwartz

Appl. Phys. Lett. 34, 742 (1979); http://dx.doi.org/10.1063/1.90656 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The presence of crystalline and amorphous elemental arsenic in films grown by the thermal oxidation of GaAs under arsenic trioxide vapor was observed using Raman backscattering. Arsenic was detected for all oxidation temperatures (350–500 °C) and resulting film thicknesses (∼80–1000 Å). Chemical etching demonstrated that the arsenic is retained in the interfacial region during growth and does not result from physical adsorption of gas‐phase species during cooling.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electroabsorption in GaInAsP

R. H. Kingston

Appl. Phys. Lett. 34, 744 (1979); http://dx.doi.org/10.1063/1.90657 (3 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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Electroabsorption, or the Franz‐Keldysh effect, has been measured in Ga0.24In0.76As0.52P0.48 with an energy gap of 1.03 eV. Absorption coefficients were determined by measuring the transmission versus bias through a double‐heterostructure photodiode. The results are in good agreement with theory and are particularly applicable to modulators and detectors in the 1.25–1.30‐μm band of interest in optical‐fiber transmission.
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78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators

Correlation of electrolytic‐etch and surface‐photovoltage techniques for the detection of electrically active defects in silicon

J. L. Deines, J. W. Philbrick, M. R. Poponiak, and D. B. Dove

Appl. Phys. Lett. 34, 746 (1979); http://dx.doi.org/10.1063/1.90658 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Electrically active defects in a 2‐μm n‐type epitaxial layer on a p‐type silicon wafer were mapped using a scanning‐surface‐photovoltage technique (SSP). The crystal was then subjected to an anodic etch which preferentially attacks electrically active defects, permitting a detailed correlation to be made between defects revealed by the two techniques. Defects visible in the SSP image usually gave rise to etch pits during anodic exposure in HF solution. The results are discussed in terms of the theory of the SSP and anodic‐etch techniques.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
42.55.Px Semiconductor lasers; laser diodes
82.45.-h Electrochemistry and electrophoresis

Superstructures of submonolayer indium films on silicon (111)7 surfaces

M. Kawaji, S. Baba, and A. Kinbara

Appl. Phys. Lett. 34, 748 (1979); http://dx.doi.org/10.1063/1.90659 (2 pages) | Cited 38 times

Online Publication Date: 7 August 2008

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Superstructures of submonolayer films of indium on a clean silicon (111)7 surface have been investigated using techniques of molecular‐beam deposition and reflection high‐energy electron diffraction. A two‐dimensional phase diagram including four superstructures, 7, (3)1/2, (31)1/2, and 4×1, are presented at substrate temperatures between 300 and 600 °C.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.55.-a Thin film structure and morphology

Unidentified acceptors in silicon and germanium

M. C. Ohmer and J. E. Lang

Appl. Phys. Lett. 34, 750 (1979); http://dx.doi.org/10.1063/1.90660 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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An empirical rule for calculating the ionization energy and the infrared absorption spectra of five unidentified acceptor levels in silicon and germanium is presented. The success of this rule may imply that these levels result from interactions between unlike substitutional group‐III impurities.
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78.40.Fy Semiconductors
71.70.-d Level splitting and interactions
72.80.Cw Elemental semiconductors
78.30.-j Infrared and Raman spectra

GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback

W. T. Tsang, R. A. Logan, and L. F. Johnson

Appl. Phys. Lett. 34, 752 (1979); http://dx.doi.org/10.1063/1.90661 (4 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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A GaAs‐AlxGa1−xAs strip‐buried‐heterostructure laser with distributed feedback provided through lateral‐evanescent‐field‐grating interaction is demonstrated. The diode is shown to operate stably in single transverse (fundamental) and longitudinal modes up to about 3×Ith over a temperature range 0–36 °C under pulsed operation. The light‐current characteristics of these lasers exhibit the characteristic linearity of conventional strip‐buried heterostructure lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Directional coupler switch in molecular‐beam epitaxy GaAs

A. Carenco, L. Menigaux, F. Alexandre, M. Abdalla, and A. Brenac

Appl. Phys. Lett. 34, 755 (1979); http://dx.doi.org/10.1063/1.90662 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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An 8‐mm‐long rib waveguide directional coupler has been made from a n (1×1016 cm−3) GaAs layer grown by molecular‐beam epitaxy. By reverse biasing the ’’stepped Δβ’’ Schottky electrodes with less than 30 V, more than 17 dB power isolation has been achieved at 1.06 μm for both switching states. Improvements are expected with the progress in layers morphology and doping level. This is a new step towards the feasibility of optoelectronic devices by a growth technique which is very attractive for GaAs integrated circuits.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology

Polarization‐sensitive coherent anti‐Stokes Raman spectroscopy

Jean‐Louis Oudar, Robert W. Smith, and Y. R. Shen

Appl. Phys. Lett. 34, 758 (1979); http://dx.doi.org/10.1063/1.90663 (3 pages) | Cited 82 times

Online Publication Date: 7 August 2008

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We show that by using polarization coherent anti‐Stokes Raman spectroscopy, the detection sensitivity of weak Raman modes is greatly enhanced. The spectra of the real part, the imaginary part, and the absolute magnitude of the resonant nonlinear susceptibility can be separately measured. Raman modes with cross sections as low as 2×10−4 times that of the 992‐cm−1 mode of benzene are detectable with less than 10‐kW‐peak‐power lasers.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Optoacoustic Raman gain spectroscopy of liquids

C. K. N. Patel and A. C. Tam

Appl. Phys. Lett. 34, 760 (1979); http://dx.doi.org/10.1063/1.90664 (4 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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We report the first optoacoustic Raman gain spectroscopy (OARS) of liquids, using two synchronized pulsed dye lasers, and gated optoacoustic detection of the energy deposited in the liquid due to the stimulated Raman (Stokes) scattering. We demonstrate this sensitive technique with several neat liquids, including benzene, acetone, 1,1,1‐trichloroethane, toluene, and n‐hexane. This technique seems competitive or superior to other techniques like intracavity inverse Raman scattering or coherent anti‐Stokes Raman spectroscopy. OARS can thus be advantageously used in many liquids, including water.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.C- Liquids
62.60.+v Acoustical properties of liquids

High critical currents in cold‐powder‐metallurgy‐processed superconducting Cu‐Nb‐Sn composites

R. Flükiger, S. Foner, E. J. McNiff, and B. B. Schwartz

Appl. Phys. Lett. 34, 763 (1979); http://dx.doi.org/10.1063/1.90665 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Cold‐powder‐metallurgy‐processed superconducting Cu‐Nb‐Sn (discontinuous) multifilamentary composites have been fabricated. Overall critical current Jc comparable to the best in situ and commercial multifilamentary Nb3Sn (scaled for the same Nb content) have been achieved. Values of Jc approximately 105 A/cm2 at 12 T, 5×104 A/cm2 at 14 T, and 2×103 A/cm2 at 18 T are observed for a material with Cu–40 wt.% Nb–20 wt.% Sn with respect to Cu. The physical characteristics of the starting materials and some advantages of the cold‐powder‐metallurgy process are discussed.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Measurement of spatial distribution of long‐wavelength radiation from GaAlAs injection lasers

S. M. Abbott

Appl. Phys. Lett. 34, 766 (1979); http://dx.doi.org/10.1063/1.90666 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Present BTL injection lasers being produced for optical communication systems exhibit luminescence peaks at 1.5 eV (0.83 μm), 1.35 eV (0.92 μm) and 1.0 eV (1.25 μm). Examination of the spatial distribution of this radiation within the DH‐laser diode has shown that the edge (1.5 eV) emission is confined to the active region, as expected, but the 1.35‐eV radiation is divided between the active region and the substrate while the 1.0‐eV radiation originates predominantly within the substrate. This result, in conjunction with recent work on laser aging, suggests that slow degradation of lasers may be due to a mobile impurity or defect originating in the substrate material on which the laser structure is fabricated.
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78.60.Fi Electroluminescence
78.30.Hv Other nonmetallic inorganics
42.55.Px Semiconductor lasers; laser diodes

Magneto‐optic current sensing with birefringent fibers

S. C. Rashleigh and R. Ulrich

Appl. Phys. Lett. 34, 768 (1979); http://dx.doi.org/10.1063/1.90667 (3 pages) | Cited 35 times

Online Publication Date: 7 August 2008

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To measure currents on high‐voltage lines, the Faraday rotation is used in a single‐mode optical fiber encircling the conductor. Disturbing linear birefringence is suppressed by twisting the fiber. With ∼10 m of fiber, coiled with a 3‐cm radius, we obtain 0.25 mrad/A polarization rotation, permitting measurement of currents of 0.2–2000 A.
Show PACS
42.81.-i Fiber optics
85.70.Sq Magnetooptical devices
07.60.Fs Polarimeters and ellipsometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Phenomenological theory of the acoustophotorefractive effect

Richard P. Leavitt

Appl. Phys. Lett. 34, 771 (1979); http://dx.doi.org/10.1063/1.90668 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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A theory of the acoustophotorefractive effect is proposed in which photocarriers excited by intense visible illumination of a LiNbO3 sample migrate under the influence of the electric field associated with a surface acoustic wave propagating in the material. The theory accounts for saturation of photocarriers due to the finite number of traps; comparison of computations using this theory with experiments shows that the observed dependence of the effect on acoustic wave power, light intensity, and light pulse width are in agreement with the theoretical predictions.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
72.40.+w Photoconduction and photovoltaic effects

Microbolometers for infrared detection

Tien‐Lai Hwang, S. E. Schwarz, and D. B. Rutledge

Appl. Phys. Lett. 34, 773 (1979); http://dx.doi.org/10.1063/1.90669 (4 pages) | Cited 36 times

Online Publication Date: 7 August 2008

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We describe a novel room‐temperature detector for the wavelength range 10–1000 μm. This detector consists of a thin bismuth bolometer film with dimensions much smaller than a wavelength. The small size of the detector results in reduced NEP and faster response. A video NEP of 1.6×10−10 W/Hz1/2 is obtained at 119 μm, remaining within a factor of 10 of this value for modulation frequencies up to 25 MHz. When used as a mixer, the device is predicted to have an NEP of 3.5×10−18 W/Hz. It is easily fabricated with conventional planar processing techniques and can be replicated in arrays. The device is expected to be most useful when the radiation to be detected is spatially coherent.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
44.10.+i Heat conduction

Dynamics of Q‐switched laser annealing

D. H. Auston, J. A. Golovchenko, A. L. Simons, C. M. Surko, and T. N. C. Venkatesan

Appl. Phys. Lett. 34, 777 (1979); http://dx.doi.org/10.1063/1.90670 (3 pages) | Cited 67 times

Online Publication Date: 7 August 2008

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Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied as a function of laser energy at 1.06‐ and 0.53‐μm wavelength for both implanted and unimplanted samples. Thresholds for initiation of melting and damaging the surface are obtained directly. With the aid of channeling–Rutherford‐backscattering measurements, the duration of melt necessary for annealing implanted samples is determined. Results for unimplanted silicon at 530 nm are compared with recent numerical calculations. In addition, measuremnts of the fall time of the reflectivity as the liquid‐solid interface approaches the surface enables us to estimate regrowth velocities. A simple scheme is also discussed for efficient annealing with dual wavelengths.
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42.62.-b Laser applications
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Ion‐implanted laser‐annealed GaAs solar cells

John C. C. Fan, Ralph L. Chapman, Joseph P. Donnelly, George W. Turner, and Carl O. Bozler

Appl. Phys. Lett. 34, 780 (1979); http://dx.doi.org/10.1063/1.90671 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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Conversion efficiencies up to 12% at AM1 have been obtained for ion‐implanted laser‐annealed (IILA) GaAs solar cells utilizing a shallow‐homojunction n+/p/p+ structure without a GaAlAs window. The n+ layer was formed by Se+‐ion implantation into the p layer, which was grown epitaxially by chemical vapor deposition on a single‐crystal p+ substrate. The implanted layer was annealed, without encapsulation, by scanning with a cw Nd : YAG laser. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer.
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85.60.-q Optoelectronic devices
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Stepped I‐V characteristics of MIS capacitors in the inversion polarity

S. Davidoff, I. Kashat, and N. Klein

Appl. Phys. Lett. 34, 782 (1979); http://dx.doi.org/10.1063/1.90679 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The inversion‐mode I‐V characteristic of several kinds of MIS capacitors exhibits a step between steeply rising ranges at low and high voltages. It was found with silicon‐dioxide–silicon‐nitride capacitors on p‐type silicon that current in the low‐voltage range is determined by tunneling from the silicon into the insulator. In the step the current is determied by minority‐carrier supply from the silicon and in the high‐voltage range by avalanching in the silicon depletion layer and by tunneling into the insulator.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Ht High-field and nonlinear effects
72.20.Dp General theory, scattering mechanisms
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