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1 Jun 1979

Volume 34, Issue 11, pp. 725-813

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High‐field dark currents in thin CVD silicon nitride with graded interfacial composition

J. M. Andrews, B. G. Jackson, and W. J. Polito

Appl. Phys. Lett. 34, 785 (1979); http://dx.doi.org/10.1063/1.90680 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Ellipsometric measurements of thin CVD Si3N4 films deposited on Si reveal a graded composition of silicon oxynitride with increasing oxygen content as the Si‐Si3N4 interface is approached. Measurements of steady‐state dark currents, injected into Si3N4 from negatively biased Al contacts at constant average field, Eav=Vτ−1=6 MV/cm, have been fitted to an empirical relation, J=J0 exp(τ0/τ), where τ is the film thickness and τ0=1039 Å. Increased film conductivity with decreasing thickness τ is attributed to diminished electron trapping as τ approaches the centroid of trapped charge, δ∼100 Å.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Temperature sensitivity of ion‐implanted MOS capacitors

James A. Topich

Appl. Phys. Lett. 34, 787 (1979); http://dx.doi.org/10.1063/1.90681 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The temperature sensitivity of ion‐implanted MOS capacitors has been studied. The results show that the damage due to the implantation process results in a frequency‐dependent temperature sensitivity. The range over which the temperature sensitivity occurs can be varied by changing both the implanted dose and energy. Since the phenomena is due to damage, postimplant annealing will reduce or eliminate the temperature sensitivity depending on the annealing time and temperature. Temperature sensitivities on the order of 2.5%/°C have been measured.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.U- Doping and impurity implantation

Buried‐grid fabrication by silicon liquid‐phase epitaxy

B. Jayant Baliga

Appl. Phys. Lett. 34, 789 (1979); http://dx.doi.org/10.1063/1.90682 (2 pages)

Online Publication Date: 7 August 2008

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This paper describes the application of silicon liquid phase epitaxy for the fabrication of buried‐grid regions. It is demonstrated here that closely spaced buried‐grid regions can be fabricated by this technique if the melt is supersaturated prior to epitaxial growth.
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61.72.U- Doping and impurity implantation
81.10.Fq Growth from melts; zone melting and refining

655 mV open‐circuit voltage, 17.6% efficient silicon MIS solar cells

R. B. Godfrey and M. A. Green

Appl. Phys. Lett. 34, 790 (1979); http://dx.doi.org/10.1063/1.90646 (4 pages) | Cited 44 times

Online Publication Date: 7 August 2008

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Major new results are reported for silicon MIS solar cells. Open‐circuit voltages up to 655 mV (AM0, 25 °C) have been obtained for 0.1‐Ω cm silicon wafers, substantially higher than previously reported for any other silicon solar cell. On an active‐area basis, the efficiency of these high‐output‐voltage cells is close to the best silicon cell yet produced with 17.6% active‐area efficiency (AM1, 28 °C) for a 3‐cm2 cell.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE

G. B. Stringfellow and G. Hom

Appl. Phys. Lett. 34, 794 (1979); http://dx.doi.org/10.1063/1.90647 (3 pages) | Cited 38 times

Online Publication Date: 7 August 2008

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A modification of the cold‐wall organometallic vapor‐phase epitaxial (OMVPE) process for the growth of AlxGa1−xAs layers is described. Graphite baffles placed in the gas stream act to greatly increase the photoluminescence efficiency of the AlxGa1−xAs. Preliminary evidence indicates that the effect of the baffles may be to provide a solid surface upon which Al2O3 can be deposited from the reaction of trimethylaluminum with any residual O2 and/or H2O in the vapor phase. The ’’gettering’’ action apparently reduces oxygen contamination of the AlxGa1−xAs.
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81.10.Bk Growth from vapor

Thin‐film Mo‐Si interaction

R. J. Schutz and L. R. Testardi

Appl. Phys. Lett. 34, 797 (1979); http://dx.doi.org/10.1063/1.90648 (2 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Previous results of single‐crystal Si‐Mo interaction indicate that MoSi2, the phase predicted by the Walser‐Bené theory, is the first silicide to form at the Si‐Mo interface. We now report that in thin‐film Si‐Mo diffusion couples either MoSi2 or a combination of Mo3Si/Mo5Si3 forms at the interface. These two results have never been observed to occur in the same sample, indicating a bistable growth mechanism. We believe this growth to be triggered by the initial interface which is modified by sample preparation conditions. Interdiffusion and reaction of Mo with amorphous Si is also found to be slower than with crystalline Si.
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82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

LaF3 insulators for MIS structures

A. Sher, W. E. Miller, Y. H. Tsuo, John A. Moriarty, R. K. Crouch, and B. A. Seiber

Appl. Phys. Lett. 34, 799 (1979); http://dx.doi.org/10.1063/1.90649 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Thin films of Laf3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively‐hysteresis‐free and sharp C‐V (capacitance‐voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Energy‐resolved DLTS measurement of interface states in MIS structures

N. M. Johnson

Appl. Phys. Lett. 34, 802 (1979); http://dx.doi.org/10.1063/1.90650 (3 pages) | Cited 53 times

Online Publication Date: 7 August 2008

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A new method is described for determining the energy of emitting centers in an interface‐state continuum independently of the emission rate in transient‐capacitance measurements on MIS structures. Deep‐level transient spectroscopy (DLTS) is performed in the double‐correlation mode to analyze the energy profile of a continuous interface‐trap distribution. With this method, DLTS can be used to evaluate interface‐state distributions with energy‐dependent capture cross sections, and the extraneous effects of bulk defect levels in the semiconductor are minimized. Experimental results are presented for electron traps at the Si‐SiO2 interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Direct observation of voltage barriers in ZnO varistors

O. L. Krivanek, P. Williams, and Yi‐Ching Lin

Appl. Phys. Lett. 34, 805 (1979); http://dx.doi.org/10.1063/1.90651 (2 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Voltage barriers in a ZnO varistor have been imaged by voltage‐contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.
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73.40.Cg Contact resistance, contact potential
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Al/Al2O3/InP MIS structures

P. N. Favennec, M. Le Contellec, H. L’Haridon, G. P. Pelous, and J. Richard

Appl. Phys. Lett. 34, 807 (1979); http://dx.doi.org/10.1063/1.90652 (2 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Metal‐insulator‐semiconductor (MIS) structures were produced by electron‐beam deposition of Al2O3 on InP. The electrical properties of such structures were investigated. For optimum conditions, capacitance/voltage (C/V) measurements show that the interface state density can be reduced to 1011 states cm−2 eV−1 by heat treatments. Capacitance transient measurements lead to an estimate of 2×103 cm sec−1 for the surface recombination velocity.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
73.61.Ng Insulators

Brillouin backscatter dependence upon pulse amplitudes, timing, target material, and geometry

B. H. Ripin and E.A. McLean

Appl. Phys. Lett. 34, 809 (1979); http://dx.doi.org/10.1063/1.90653 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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The dependence of stimulated Brillouin backscatter upon pulse amplitudes, timing, target material, and geometry from a prepulse‐formed plasma is found. The applicability of these results to backscatter from a structured continuous pulse is discussed.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Technique for profiling 1H with 2.5‐MeV Van de Graaff accelerators

B. L. Doyle and P. S. Peercy

Appl. Phys. Lett. 34, 811 (1979); http://dx.doi.org/10.1063/1.90654 (3 pages) | Cited 88 times

Online Publication Date: 7 August 2008

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We describe an elastic recoil detection (ERD) analysis technique for profiling 1H in the near‐surface regions of solids using a 2.5‐MeV Van de Graaff accelerator commonly used for ion‐backscattering analysis. Energy analysis of 1H forward scattered by 2.4‐MeV 4He incident on the target tilted at an angle of ∼75° yields a depth resolution of ≲700 Å and a sensitivity of better than 0.1 at.% for 1H to depths of ≲0.6 μm in solids.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
82.80.-d Chemical analysis and related physical methods of analysis
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