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15 Jun 1979

Volume 34, Issue 12, pp. 817-870


Zero temperature coefficient of delay for surface waves in quartz

B. K. Sinha and H. F. Tiersten

Appl. Phys. Lett. 34, 817 (1979); http://dx.doi.org/10.1063/1.90693 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Some new orientations and propagation directions possessing zero temperature coefficients of delay for surface waves in quartz with somewhat better electromechanical coupling than the ST cut are reported. One of the orientations also exhibits an almost‐zero power flow angle. The results have been obtained using a nonlinearly based formalism in which the reference geometry, which remains fixed as the temperature is varied, may be employed.
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62.30.+d Mechanical and elastic waves; vibrations
62.90.+k Other topics in mechanical and acoustical properties of condensed matter (restricted to new topics in section 62)

New sector‐scan imaging devices

F. Haine, C. Bruneel, R. Torguet, and E. Bridoux

Appl. Phys. Lett. 34, 819 (1979); http://dx.doi.org/10.1063/1.90694 (3 pages)

Online Publication Date: 7 August 2008

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A new sector‐scan imaging device with moving focus is reported. This device uses an analog calculator for generating the scanning acoustic beam in place of the digital calculator needed in some other designs. It allows series or parallel operation in the imaging process. The basic principle and some preliminary results on the analog calculator operation and on imaging applications are shown.
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43.80.Jz Use of acoustic energy (with or without other forms) in studies of structure and function of biological systems
43.64.Yp Instruments and methods
43.38.Fx Piezoelectric and ferroelectric transducers
43.35.Yb Ultrasonic instrumentation and measurement techniques

Determination of dielectric relaxation time as a function of pressure and temperature by the thermally stimulated current method

Bui Ai, Corina Popescu Stoka, Hoang The Giam, and Pierre Destruel

Appl. Phys. Lett. 34, 821 (1979); http://dx.doi.org/10.1063/1.90695 (3 pages)

Online Publication Date: 7 August 2008

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The thermally stimulated current (TSC) has been used over a wide range of pressure to determine the principal characteristics of the polymers such as the activation volume ΔV, the activation energy ΔE, and the preexponential term τ0 of the Arrhenius‐type relaxation time: τ=τ0 exp[(PΔV+ΔE)/kT]. Experimentally, the 6‐Polyamide sample is subjected to a high hydrostatic pressure before application of the classical TSC method. The variation law of the relaxation time, a function of temperature and pressure, τ (P,T), of this polymer is given by the determination of these characteristics with the initial slope analysis of the TSC experimental curves.
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77.22.Gm Dielectric loss and relaxation

Coupling to an ’’edge metal‐oxide‐metal’’ junction via an evaporated long antenna

Y. Yasuoka, M. Heiblum, and T. K. Gustafson

Appl. Phys. Lett. 34, 823 (1979); http://dx.doi.org/10.1063/1.90696 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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The observation of planar long‐antenna coupling to a metal‐oxide‐metal (edge configuration) has been demonstrated at λ=118 μm. The two major lobes of an 11λ antenna are coupled to via a superstrate prism. Insufficient data is presently available to identify with certainty the mechanism of detection.
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73.40.Rw Metal-insulator-metal structures
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Acceleration of solid pellets using a plasma gun

T. L. Buller, R. J. Turnbull, and K. Kim

Appl. Phys. Lett. 34, 826 (1979); http://dx.doi.org/10.1063/1.90697 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The use of solid pellets of hydrogen isotopes to refuel thermonuclear fusion reactors based on the tokamak configuration will require that the pellets be accelerated to high velocities. One possible method of acceleration is to interact a fast plasma from a plasma gun with the pellets. In this paper preliminary results are given on the acceleration of solid pellets with a plasma gun. The plasma‐gun requirements for successful acceleration to high velocities are discussed.
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52.75.Di Ion and plasma propulsion
52.75.-d Plasma devices
06.30.Gv Velocity, acceleration, and rotation

Measurement of piezoelectric parameters versus bias field strength in polyvinylidene fluoride (PVF2)

Behruz Rezvani and John G. Linvill

Appl. Phys. Lett. 34, 828 (1979); http://dx.doi.org/10.1063/1.90698 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Piezoelectric polymers, such as PVF2, being light and flexible, are attractive new materials for transducers. A new all‐electrical meaurement method for piezoelectric parameters of PVF2 has been developed. Moreover, the method permits application of a variable bias field going to high values in addition to the small alternating field used for measurement. By using this technique, it has been found that linear performance extends to a very high electric field (30 V/μm) without degradation. This technique is also used to study the behavior of d31 under a range of dc field strengths. Finally, the method is used to investigated various procedures for poling PVF2.
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43.35.Ns Acoustical properties of thin films
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
77.65.-j Piezoelectricity and electromechanical effects

cw laser recrystallization of 〈100〉 Si on amorphous substrates

J. F. Gibbons, K. F. Lee, T. J. Magee, J. Peng, and R. Ormond

Appl. Phys. Lett. 34, 831 (1979); http://dx.doi.org/10.1063/1.90699 (3 pages) | Cited 33 times

Online Publication Date: 7 August 2008

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A polycrystalline silicon film 0.55 μm thick was deposited in a low‐pressure CVD reactor on a Si3N4 substrate. Islands of various sizes (2×20 μm up to 20×160 μm) were prepared by standard photolithographic techniques. Laser annealing was then performed under conditions which are known to cause an increase in grain size from ∼500 Å to long narrow crystals of 2×25 μm in a continuous polysilicon film. These same conditions were found to produce single‐crystal 〈100〉 material in the (2×20 μm) islands. However, 25×25‐μm and 20×160‐μm islands remain polycrystalline after the laser scan.
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72.80.Ng Disordered solids
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

The growth of tin oxide films at room temperature

S. K. Ghandhi, R. Siviy, and J. M. Borrego

Appl. Phys. Lett. 34, 833 (1979); http://dx.doi.org/10.1063/1.90683 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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This report outlines the growth of highly transparent films of undoped tin oxide at near ambient temperatures (∼30 °C). Films were deposited by a technique based on the reaction of rf plasma‐activated oxygen with tetramethyltin. Growth rates as high as 160 Å/min have been achieved with a 100‐μm partial pressure of tetramethyltin and an overall system pressure of 500 μm. The growth kinetics have been explained by a model in which the tetramethyltin is the rate limiter, and the concentration of active oxygen is independent of the flow rate of molecular oxygen.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.-m Photochemistry

High‐density optical recording with (Ga,Al)As DH lasers

P. M. Asbeck, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, and W. H. Ophey

Appl. Phys. Lett. 34, 835 (1979); http://dx.doi.org/10.1063/1.90684 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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(Ga,Al)As lasers were employed to optically machine a series of 1‐μm‐diam holes in 200–300‐Å‐thick films of tellurium on polymethylmethacrylate substrates at repetition rates as high as 10 MHz. By modulating the hole repetition frequency, limited bandwidth video signals were successfully recorded. The hole machining was accomplished with lasers which operated in fundamental transverse and lateral mode at high pulsed power (typically greater than 150 mW), in conjunction with a high‐collection‐efficiency focusing system. The lasers were operated at low (⩽20%) duty cycle in order to minimize internal heating. The hole sizes obtained and the repetition rates achieved are appropriate for a high‐density optical recording system.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.15.Eq Optical system design
78.66.Bz Metals and metallic alloys
42.62.-b Laser applications

Simultaneous stimulated Raman scattering and optical frequency mixing in lithium iodate

E. O. Ammann

Appl. Phys. Lett. 34, 838 (1979); http://dx.doi.org/10.1063/1.90685 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Efficient stimulated Raman scattering (SRS) has recently been achieved in lithium iodate (LiIO3) at kHz PRF’s, thereby producing substantial average output powers in the first and second Stokes lines. In this letter, we show that the same LiIO3 crystal that serves as the Raman medium can also be used to generate the second harmonics and sum frequencies of the pump and Stokes lines. By rotating a LiIO3 crystal placed inside a Nd : YAlO3 laser, we have successively generated phase‐matched outputs at 0.54 μm (1.13 W), 0.565 μm (78 mW), 0.592 μm (685 mW), 0.622 μm (98 mW), and 0.655 μm (107 mW).
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Absorption of laser radiation by Al, Fe, and Au planar metallic targets

J. P. Anthes, M. A. Palmer, M. A. Gusinow, and M. K. Matzen

Appl. Phys. Lett. 34, 841 (1979); http://dx.doi.org/10.1063/1.90686 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Experiments to determine the absorptance of an 8‐nsec (FWHM) 1.064‐μm laser pulse incident on metallic targets were performed using a well‐characterized integrating sphere photometer. The absorptance was inferred by individually measuring the incident, back reflectd, and scattered laser radiation over the range ≃1013–1014 W/cm2 for three different elemental planr targets (Al, Fe, and Au). The absorptance varied approximately linearly from 0.9 at 1013 W/cm2 at 1014 W/cm2 and was independent of target material. The experimental accuracy was ±4%.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena

Atomic gallium photodissociation laser

H. Hemmati and G. J. Collins

Appl. Phys. Lett. 34, 844 (1979); http://dx.doi.org/10.1063/1.90687 (2 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Stimulated emission has been observed on the 417.2‐nm line of neutral atomic gallium by photodissociation of gallium iodide molecules with the 193‐nm output of an ArF laser. Laser output energies of 100 μJ per pulse were obtained from the absorption of 5 mJ of ArF laser radiation.
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42.55.-f Lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.50.Hp Processes caused by visible and UV light

A nickel‐ion laser

Kanti Jain

Appl. Phys. Lett. 34, 845 (1979); http://dx.doi.org/10.1063/1.90688 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Laser oscillation has been achieved in singly ionized nickel at 796.24 and 797.54 nm in a hollow‐cathode discharge. This, to our knowledge, is the first report of inversion in Ni II.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.70.+e Charge transfer
42.60.By Design of specific laser systems

FM mode‐locked Nd0.5La0.5P5O14 laser

S. R. Chinn and W. K. Zwicker

Appl. Phys. Lett. 34, 847 (1979); http://dx.doi.org/10.1063/1.90689 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A FM mode‐locked Nd0.5La0.5P5O14 laser excited by a cw dye laser has been constructed. The 1052‐nm laser pulses, occurring at a 480‐MHz repetition rate, had widths as short as 14 ps, determined by a correlation measurement. With appropriate detuning of the cavity round‐trip interval, uniform amplitude FM output was obtained, with bandwidth up to 240 GHz.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Resolution of photon‐recoil structure of the 6573‐Å calcium line in an atomic beam with optical Ramsey fringes

R. L. Barger, J. C. Bergquist, T. C. English, and D. J. Glaze

Appl. Phys. Lett. 34, 850 (1979); http://dx.doi.org/10.1063/1.90690 (3 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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The photon‐recoil components of the Ca 6573‐Å line have been resolved using the three‐zone optical Ramsey interference technique with an atomic beam. Linewidths as narrow as 3 kHz HWHM (line Q of 8×1010) are reported for zone separations up to 7 cm. An indication of the light‐shift‐induced contraction of the recoil splitting predicted by C.J. Bordé is obtained. Techniques are discussed which should lead to an optical wavelength/frequency standard with an accuracy of better than 10−14.
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07.60.Rd Visible and ultraviolet spectrometers

Effect of pressure and pulse length on the isotopically selective photodissociation of freon CF2Cl2 under CO2 laser pulses

M. Neve de Mevergnies

Appl. Phys. Lett. 34, 853 (1979); http://dx.doi.org/10.1063/1.90691 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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See Also: Erratum

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When the 13C species of CF2Cl2 is excited by short TEA‐CO2 laser pulses, the isotopic enrichment of the resultant photodissociation remains constant between 0.25 and 2 Torr CF2Cl2 pressure, whereas excitation of the 12C species yields a monotonous decrease of the enrichment with pressure in the same range. These results are compared to those obtained with longer pulses and with the 32S and 34S species of SF6.
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82.50.Hp Processes caused by visible and UV light
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
28.60.+s Isotope separation and enrichment

Large‐signal theory of phase‐conjugate backscatterings

Hsiung Hsu

Appl. Phys. Lett. 34, 855 (1979); http://dx.doi.org/10.1063/1.90692 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The large‐signal characteristics of conversion efficiency and gain saturation for phase‐conjugate backscattering processes are discussed in detail to explain the large deviation of the simple small‐signal theory from many experimental observations. As characterized by the nature of the inherent feedback in backward‐traveling‐wave interactions, complete power conversion from the pump to signal can often be accomplished. The understanding of this unique feature will provide new concepts for many high‐power laser applications including, for example, power transmission to space vehicles and military applications concerning missiles.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.15.Dp Wave fronts and ray tracing
42.25.Dd Wave propagation in random media
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4 encapsulant

A. M. Huber, G. Morillot, N. T. Linh, P. N. Favennec, B. Deveaud, and B. Toulouse

Appl. Phys. Lett. 34, 858 (1979); http://dx.doi.org/10.1063/1.90700 (2 pages) | Cited 57 times

Online Publication Date: 7 August 2008

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Quantitative Cr profiles have been determined on semi‐insulating GaAs by secondary‐ion mass spectrometry (CAMECA IMS 300). It is shown that after thermal annealing (900 °C, 20 min) under Si3N4, Cr diffuses towards the GaAs surface, leaving a Cr concentration depletion zone underneath. This zone becomes conductive with a carrier concentration of n∼2×1016 cm−3. Some consequences of these findings are considered.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

High‐temperature lifetesting of Al/SiOx/p‐Si contacts for MIS solar cells

R. B. Godfrey and M. A. Green

Appl. Phys. Lett. 34, 860 (1979); http://dx.doi.org/10.1063/1.90701 (2 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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High‐temperature lifetesting of Al/SiOx (10–15 Å)/p‐Si contacts for high‐efficiency MIS solar cells is reported. Electrical degradation in the temperature range 270–400 °C was governed by an activation energy of 2.56±0.12 eV, indicating that the reduction of the thin oxide layer by Al was the mechanism responsible. Extrapolating to lower temperatures indicates that this process proceeds at a negligible rate below 200 °C.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion
82.20.Pm Rate constants, reaction cross sections, and activation energies

Determination of the valence‐band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum‐well luminescence

R. Chin, N. Holonyak, S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek

Appl. Phys. Lett. 34, 862 (1979); http://dx.doi.org/10.1063/1.90702 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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By means of liquid‐phase epitaxy, undoped single‐quantum‐well layers of In1−xGaxP1−zAsz (x∼0.13, z∼0.29) of thickness Lz∼150 Å are grown embedded in InP and are examined in photoluminescence. Hot‐electron recombination from Ec (InP) to bound holes in the quaternary quantum well leads to stimuated emission in a band ∼80 meV below Eg (InP) and thus to an estimate of ΔEv∼80 meV (ΔEc∼ΔEv) for the InP‐InGaPAs valence‐band discontinuity.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
78.55.-m Photoluminescence, properties and materials
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Picosecond laser‐induced melting and resolidification morphology on Si

P. L. Liu, R. Yen, N. Bloembergen, and R. T. Hodgson

Appl. Phys. Lett. 34, 864 (1979); http://dx.doi.org/10.1063/1.90703 (3 pages) | Cited 145 times

Online Publication Date: 7 August 2008

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Ultrafast melting and resolidification on the surface of a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm. Optical microscopy and electron diffraction revealed the formation of amorphous silicon. Details of surface morphology are sensitive functions of pulse intensity, energy, wavelength, and crystallographic orientation.
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64.60.-i General studies of phase transitions
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
81.10.Fq Growth from melts; zone melting and refining
81.40.Gh Other heat and thermomechanical treatments

Shallow‐junction p+‐n germanium avalanche photodiodes (APD’s)

T. Kaneda, H. Fukuda, T. Mikawa, Y. Banba, Y. Toyama, and H. Ando

Appl. Phys. Lett. 34, 866 (1979); http://dx.doi.org/10.1063/1.90704 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Low‐noise and high‐quantum‐efficiency germanium APD’s have been investigated by a p+‐n structure. Boron implantation was used to form the p+ layer. Shallow p+‐n junctions have a lower excess noise that n+‐p junctions because holes have a higher ionization coefficient in germanium, and these p+‐n diodes have a higher hole‐to‐electron collection efficiency. Excess noise factors F≈7 at a multiplication factor of 10 are obtained at wavelength of ∼1.4 μm, whereas F≈11 for n+‐p diodes. An internal quantum efficiency of ∼80% is obtained at 1.15 μm.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

A method for determining the region of superparamagnetism

George A. Candela and Ruth A. Haines

Appl. Phys. Lett. 34, 868 (1979); http://dx.doi.org/10.1063/1.90705 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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A simple procedure which determines the coercive force as a function of temperature has been developed for superparamagnetic materials having a particle‐size distribution. This procedure accurately determines the region where superparamagnetism occurs, and it has been used to obtain the first experimental verification of the Bean‐Livingston coercive‐force temperature relation.
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75.60.-d Domain effects, magnetization curves, and hysteresis
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
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