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1 Jan 1979

Volume 34, Issue 1, pp. 1-120

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Performance of a new high‐intensity silicon solar cell

Robert I. Frank and Roy Kaplow

Appl. Phys. Lett. 34, 65 (1979); http://dx.doi.org/10.1063/1.90560 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A new silicon solar cell, designed to have improved electrical, optical, and thermal transfer characteristics at very high incident light intensities, has been fabricated and provides experimental verification of the basic design concepts. The AM1 efficiency for nonoptimized cells is 12.8% at 25 °C. At 300 suns the efficiency increases to 19%. It is shown that efficiencies of over 25% are possible for this type of cell in a more‐optimized form at intensities of ∼500–1000 suns.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Dynamics of laser‐induced formation of palladium silicide

M. von Allmen and M. Wittmer

Appl. Phys. Lett. 34, 68 (1979); http://dx.doi.org/10.1063/1.90561 (3 pages) | Cited 27 times

Online Publication Date: 7 August 2008

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The formation of palladium silicide by laser irradiation of a thin Pd film evaporated on single‐crystal silicon has been studied. We used 18‐ns pulses from a Q‐switched Nd : YAG laser to induce the reaction. The process of laser‐induced silicide formation takes place through interdiffusion of the molten elements, followed by thermal quenching. A diffusion constant of 4×10−4 cm2/s was estimated. The reacted layer was found to consist of a mixture of different metal‐silicon compounds.
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82.53.-k Femtochemistry
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.55.-a Thin film structure and morphology
82.40.-g Chemical kinetics and reactions: special regimes and techniques

The etching of silicon with XeF2 vapor

H. F. Winters and J. W. Coburn

Appl. Phys. Lett. 34, 70 (1979); http://dx.doi.org/10.1063/1.90562 (4 pages) | Cited 133 times

Online Publication Date: 7 August 2008

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It is shown that silicon is isotropically etched by exposure to XeF2(gas) at T=300 K. Si etch rates as large as 7000 Å/min were observed for P (XeF2) <1.4×10−2 Torr and the etch rate varies linearly with P (XeF2). There was no observable etching of SiO2, Si3N4, or SiC, demonstrating an extremely large selectivity between silicon and its compounds. Therefore, thin masks constructed from silicon compounds can be used for pattern delineation. The implication of these experimental results for understanding mechanisms associated with plasma etching (including RIE) will be discussed.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx Metals, semimetals, and alloys

Defect states associated with dislocations in silicon

L. C. Kimerling and J. R. Patel

Appl. Phys. Lett. 34, 73 (1979); http://dx.doi.org/10.1063/1.90563 (3 pages) | Cited 108 times

Online Publication Date: 7 August 2008

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The introduction and annealing of defect states in silicon stressed at 770 °C in compression have been studied by capacitance transient spectroscopy on Schottky‐barrier structures. High‐resistivity n‐type samples are converted to p type. Low resistivity n‐type samples are compensated but recover upon annealing. A large variety of defect states are observed with prominent features at E (0.68) after deformation. The spectra simplify upon annealing at 900 °C to two dominant states, E (0.38) and H (0.35).
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71.55.-i Impurity and defect levels
61.72.-y Defects and impurities in crystals; microstructure
81.40.Lm Deformation, plasticity, and creep

Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques

S. S. Lau, S. Matteson, J. W. Mayer, P. Revesz, J. Gyulai, J. Roth, T. W. Sigmon, and T. Cass

Appl. Phys. Lett. 34, 76 (1979); http://dx.doi.org/10.1063/1.90564 (3 pages) | Cited 53 times

Online Publication Date: 7 August 2008

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We demonstrate that the crystalline quality of Si layers grown on sapphire substrate (SOS) by the CVD method can be greatly improved through the use of implantation of Si ions and subsequent thermal annealing at relatively low temperatures (∼550 °C). This method utilizes an amorphous layer created by ion implantation near the sapphire/Si interface. Subsequent regrowth of this amorphous layer starting from the relatively perfect Si surface region leads to a much improved Si crystalline layer, as evidenced by MeV 4He+ channeling and TEM measurements. When the implantation‐formed amorphous layer is located at the outer portion of the Si layer, thermal annealing leads to only a small reduction in the amount of defects in the regrown layer as compared to the unimplanted sample. In these layers, epitaxial regrowth occurs with the same rate and activation energy observed in self‐ion‐implanted 〈100〉 Si.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

A ZnSe‐ZnTe amorphous heterojunction

C. J. Moore and D. E. Brodie

Appl. Phys. Lett. 34, 78 (1979); http://dx.doi.org/10.1063/1.90565 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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An all‐amorphous thin‐film p‐n heterojunction has been fabricated and is described. The films were prepared by vacuum deposition. An analysis of the I‐V characteristics suggests that the mechanisms are more complicated than those represented by the standard diode equation.
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73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Contrast and resolution of SEM charge‐collection images of dislocations

C. Donolato

Appl. Phys. Lett. 34, 80 (1979); http://dx.doi.org/10.1063/1.90567 (2 pages) | Cited 44 times

Online Publication Date: 7 August 2008

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Image profiles obtained in the scanning electron microscope operating in the charge‐collection mode are calculated for a dislocation perpendicular to a surface barrier. The image resolution is not limited by the minority‐carrier diffusion length in the semiconductor, but only determined by the generation volume, in agreement with experiment. The contrast characteristics of a dislocation differ from those of a localized defect, leading to a practical method for distinguishing the two types of imperfections.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers

M. von Allmen, W. Lüthy, J. P. Thomas, M. Fallavier, J. M. Mackowski, R. Kirsch, M‐A. Nicolet, and M. E. Roulet

Appl. Phys. Lett. 34, 82 (1979); http://dx.doi.org/10.1063/1.90568 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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It is shown that epitaxial regrowth of thin amorphized Si layers by Nd‐laser irradiation is strongly affected by temperature‐induced changes in the absorptivity of the crystalline substrates. This results in an amplification of small spatial variations of the absorbed intensity by local thermal runaway. The problem can be avoided by either preheating the sample or by applying pulses of long duration and reduced intensity. A model explaining the observations is proposed.
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79.20.Ds Laser-beam impact phenomena
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
42.62.-b Laser applications

A computer simulation of laser annealing silicon at 1.06 μm

J. C. Schultz and R. J. Collins

Appl. Phys. Lett. 34, 84 (1979); http://dx.doi.org/10.1063/1.90569 (4 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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A computer simulation of laser annealing ion‐implanted silicon with 1.06‐μm radiation at energy densities of 38–76 MW/cm2 shows that the amorphous surface layer of the silicon melts. Quantitative predictions for the depth of the molten zone and the impurity distribution as a function of peak laser intensity and pulse duration agree well with published experimental observations. Additional analysis indicated that pulse duration, peak power density, and the impurity implantation depth are of primary importance in controlling the laser annealing process. Also, step junctions may be produced for optimal values of these parameters.
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61.80.Jh Ion radiation effects
79.20.Ds Laser-beam impact phenomena
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

MIS structures based on spin‐on SiO2 on GaAs

T. P. Ma and K. Miyauchi

Appl. Phys. Lett. 34, 88 (1979); http://dx.doi.org/10.1063/1.90570 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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MIS capacitors have been produced on GaAs substrates using spin‐on SiO2 as the primary gate insulator. Following appropriate densification and annealing procedures, these samples show electrical properties superior, or comparable, to the reported data on other GaAs MIS structures. The formation of the surface inversion layer in the reverse‐bias region, the relatively low leakage current, and the small hysteresis in these samples strongly suggest that it may be possible to fabricate useful enhancement mode MOSFET’s on GaAs using the present technique. A detailed description of the experimental technique is presented along with a discussion of several considerations that led to the development of the technique.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

The influence of growth‐solution dopants on distribution coefficients in the LPE growth of InGaAsP

M. Feng, M. M. Tashima, L. W. Cook, R. A. Milano, and G. E. Stillman

Appl. Phys. Lett. 34, 91 (1979); http://dx.doi.org/10.1063/1.90571 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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In experiments on the growth of InGaAsP alloys by liquid‐phase epitaxy on (100) ‐InP substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes changes in the epilayer lattice constant that results from changes in alloy composition. For growth from an In0.95707Ga0.0040As0.0353P0.00363 solution, the changes in the distribution coefficients of Ga and As due to doping have been found by comparing the compositions of epilayers grown either from an undoped solution or from solutions each doped with one of the three impurities. The epilayer compositions were determined by electron microprobe, the lattice constants were obtained by x‐ray diffraction, and the energy gaps were estimated from transmission measurements.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.10.Fq Growth from melts; zone melting and refining

Low‐temperature field ionization of localized impurity levels in semiconductors

Jayanth R. Banavar, Darryl D. Coon, and Gustav E. Derkits

Appl. Phys. Lett. 34, 94 (1979); http://dx.doi.org/10.1063/1.90572 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The dynamics of field ionization from localized impurity levels in a semiconductor at low temperatures in an externally applied electric field are studied. The theory predicts a pronounced peak, characteristic of the impurities present and their state of ionization in the I‐V curves of devices containing a uniform lightly doped region sandwiched between surface electrodes, provided that the applied voltage is swept sufficiently rapidly. The results of the theory are found to be in good agreement with experiments using silicon pin diodes.
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79.70.+q Field emission, ionization, evaporation, and desorption
71.55.-i Impurity and defect levels
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects

Beryllium‐ion implantation in InP and In1−xGaxAsyP1−y

J. P. Donnelly and C. A. Armiento

Appl. Phys. Lett. 34, 96 (1979); http://dx.doi.org/10.1063/1.90573 (4 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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Anneal temperatures ⩾700 °C are necessary to obtain maximum electrical activation of implanted Be in InP. At these temperatures, activation ≳50% is generally achievable. Both the implant temperature and implanted‐Be concentration affect p‐n junction depth and presumably, therefore, the in‐diffusion of implanted Be. For room‐temperature implants, the maximum Be concentration which showed insignificant in‐diffusion was 3×1018 cm−3. Using a multienergy implant schedule (highest energy 400 keV), which results in a flat as‐implanted Be concentration of ≈3×1018 cm−3, sheet hole concentrations as high as 2.2×1014 and 1.5×1014 cm−2 have been obtained in InP and In0.75Ga0.25As0.52P0.48, respectively.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys

R. Bisaro, P. Merenda, and T. P. Pearsall

Appl. Phys. Lett. 34, 100 (1979); http://dx.doi.org/10.1063/1.90575 (3 pages) | Cited 34 times

Online Publication Date: 7 August 2008

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The coefficient of thermal expansion has been determined in the temperature range 25–400 °C for InP, the ternary alloy Ga0.47In0.53As, and the quaternary alloy Ga0.26In0.74As0.40P0.60 grown on (100) InP by liquid‐phase epitaxy. This parameter is (4.56±0.10) ×10−6/°C for InP, (5.42±0.10) ×10−6/°C for Ga0.26In0.74As0.60P0.40, and (5.66±0.10) ×10−6/°C for Ga0.47In0.53As.
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65.40.De Thermal expansion; thermomechanical effects

Transverse modes in gap‐coupled surface‐wave devices

S. A. Reible

Appl. Phys. Lett. 34, 103 (1979); http://dx.doi.org/10.1063/1.90597 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The support structure used to maintain a uniform air gap in separated‐media acoustoelectric devices can cause considerable distortion of the acoustic‐beam profiles. These distortions, which include the decomposition of the incident acoustic beam into multiple waveguide modes, have a detrimental effect on the efficiency and frequency response of the devices. Experimental observations have led to a simple rail array which minimizes the undesirable effects of the support structure.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

Measurement of minority‐carrier lifetime in GaAs using the transient response of MOS capacitors

G. Vitale, E. E. Crisman, J. J. Loferski, and B. Roessler

Appl. Phys. Lett. 34, 106 (1979); http://dx.doi.org/10.1063/1.90598 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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The minority‐carrier generation lifetime has been measured in GaAs by observing the transient capacitance that occurs when an MOS is switched from accumulation to deep depletion. Application of this technique requires the fabrication of an MOS that shows inversion; this has been done by growing a native GaAs oxide with plasma oxidation. Preliminary results are reported on both lifetime and surface recombination velocity in p‐type GaAs.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Ey III-V and II-VI semiconductors

Donor‐levels analysis in GaAlAs double heterostructure

B. Balland, G. Vincent, D. Bois, and P. Hirtz

Appl. Phys. Lett. 34, 108 (1979); http://dx.doi.org/10.1063/1.90599 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Capacitance versus temperature, capacitance, and current DLTS, together with optical excitation, are used to analyze the donors in the n‐type Sn‐doped GaAlAs layer of LED double heterostructures. Two donor levels are found to be associated with Sn. One of them shows a persistent photoconductivity effect at low temperature.
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78.40.Fy Semiconductors
73.20.-r Electron states at surfaces and interfaces
85.60.Jb Light-emitting devices

Improvements of ’’in situ’’ multifilamentary Nb3Sn superconducting wires

R. Roberge, S. Foner, E. J. McNiff, B. B. Schwartz, and J. L. Fihey

Appl. Phys. Lett. 34, 111 (1979); http://dx.doi.org/10.1063/1.90600 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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’’In situ’’ multifilamentary Nb3Sn wires with improved high‐field properties are reported. An overall critical current density greater than 104 A/cm3 is achieved at 14 T for a Cu–36 wt%–Nb–20 wt% Sn material. The results are comparable to the best reported commercial multifilamentary Nb3Sn materials.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Fe‐B‐C amorphous alloys with room‐temperature saturation induction over 17.5 kG

S. Hatta, T. Egami, and C. D. Graham

Appl. Phys. Lett. 34, 113 (1979); http://dx.doi.org/10.1063/1.90601 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Amorphous alloys of Fe86B14−xCx (5⩽x⩽7) were found to have room‐temperature saturation induction approaching 18 kG after appropriate heat treatment. The alloys possess excellent soft‐magnetic properties with the ac loss less than 0.5 W/kg at 17 kG and 60 Hz. It is expected that the application of these alloys to power transformers will produce very large savings of energy.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Bb Fe and its alloys
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Susceptibility measurements on the ion‐implanted layer of bubble garnet films

I. Maartense and C. W. Searle

Appl. Phys. Lett. 34, 115 (1979); http://dx.doi.org/10.1063/1.90602 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Measurements in the plane of bubble films show a sharp maximum in the ac susceptibility of implanted layers when the underlying film is saturated. The nature of this peak and its behavior as a function of bias field and etching carry information about the layer’s uniformity and anisotropy as well as the film’s domain collapse and stripe propagation fields and coercivity.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Oscillations in the emf of solid‐state electrochemical oxygen sensors

R. E. Hetrick and E. M. Logothetis

Appl. Phys. Lett. 34, 117 (1979); http://dx.doi.org/10.1063/1.90577 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Oscillations have been found in the emf of ZrO2 electrochemical cells used for high‐temperature oxygen sensing in nonequilibrium CO,O2 environments. This behavior is shown to arise from an oscillation in the platinum‐catalyzed oxidation of CO. The use of a ZrO2 cell provides a new technique for studying oscillating reactions of this type.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.40.-g Chemical kinetics and reactions: special regimes and techniques
82.45.-h Electrochemistry and electrophoresis
FREE

Erratum: Intense lasing in discharge excited noble‐gas monochlorides

Robert C. Sze and Peter B. Scott

Appl. Phys. Lett. 34, 120 (1979); http://dx.doi.org/10.1063/1.90579 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
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