Anneal temperatures ⩾700 °C are necessary to obtain maximum electrical activation of implanted Be in InP. At these temperatures, activation ≳50% is generally achievable. Both the implant temperature and implanted‐Be concentration affect p‐n junction depth and presumably, therefore, the in‐diffusion of implanted Be. For room‐temperature implants, the maximum Be concentration which showed insignificant in‐diffusion was 3×1018 cm−3. Using a multienergy implant schedule (highest energy 400 keV), which results in a flat as‐implanted Be concentration of ≈3×1018 cm−3, sheet hole concentrations as high as 2.2×1014 and 1.5×1014 cm−2 have been obtained in InP and In0.75Ga0.25As0.52P0.48, respectively.