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15 Jan 1979

Volume 34, Issue 2, pp. 123-177


Real‐time spectral analysis of far‐infrared laser pulses using an SAW dispersive delay line

H. R. Fetterman, P. E. Tannenwald, C. D. Parker, J. Melngailis, R. C. Williamson, P. Woskoboinikow, H. C. Praddaude, and W. J. Mulligan

Appl. Phys. Lett. 34, 123 (1979); http://dx.doi.org/10.1063/1.90720 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Spectral analysis of high‐power pulsed D2O lasers has been accomplished using SAW dispersive delay lines. Both the contributions of longitudinal modes and the tuning of the stimulated Raman line at 385 μm have been observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Real‐time Fourier transformation via acousto‐optics

N. J. Berg, J. N. Lee, M. W. Casseday, and E. Katzen

Appl. Phys. Lett. 34, 125 (1979); http://dx.doi.org/10.1063/1.90721 (3 pages)

Online Publication Date: 7 August 2008

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An implementation of the chirp transform algorithm for performing a real‐time Fourier transform is described. The implementation is based upon an acousto‐optic convolver with a large time‐bandwidth product An instantaneous bandwidth of about 75 MHz was achieved for the Fourier transformer with a dynamic range in excess of 60 dB for a cw time‐gated waveform. By using an almost‐uniform light‐beam intensity across the device, the measured sidelobe amplitudes were within 0.5 dB of the theoretical values. The corresponding measured phase errors were less than 5°. The adaptability of this acousto‐optic implementation is demonstrated by the ease with which one can vary both the sidelobe weighting function and the time rate of the transform.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.Jq Electro-optical effects
43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects

An elastic‐wave ellipsometer for measurement of material property variations

R. B. Thompson and C. F. Vasile

Appl. Phys. Lett. 34, 128 (1979); http://dx.doi.org/10.1063/1.90722 (3 pages)

Online Publication Date: 7 August 2008

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Electromagnetic‐acoustic transducers (EMAT’s) can excite and detect elastic shear waves with electronically controlled elliptical polarizations. These can be used to construct an ellipsometer for precise measurement of mechanical properties of solids, in analogy to devices presently used in optical studies. The elastic‐wave case differs from the optical case in two important ways. Longitudinal as well as transverse waves will, in general, exist, and the propagation medium, as well as the surfaces, play an important role in determining the system response. A device is described which is designed to avoid the former mode conversion effects on thin plates. The results of two simple experiments to demonstrate its performance are then reported. In one, measurement of the texture of a metal plate demonstrates the ability to sense bulk property changes which alter the relative velocities of the two‐wave components. In the second, measurements of the effect of a fluid on one side of the plate demonstrates the ability to sense surface changes which alter the relative attenuation of the two‐wave components. The technique appears likely to find future application in the high‐precision measurement of a number of elastic properties, particularly in view of the fact that it requires no couplant and hence can perform well under various adverse conditions.
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43.38.Dv Electromagnetic and electrodynamic transducers
46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.30.+d Mechanical and elastic waves; vibrations

Observation of transverse and longitudinal modes in non‐neutral electron clouds confined in a magnetic mirror

Shimon Eckhouse, Amnon Fisher, and Norman Rostoker

Appl. Phys. Lett. 34, 131 (1979); http://dx.doi.org/10.1063/1.90723 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Electrostatic modes on non‐neutral electron clouds confined in a magnetic mirror field have been investigated. The cloud contains 2×1011 electrons at an average kinetic energy of 0.3 MeV for a magnetic field with a peak intensity of 9 kG at the midplane. It was found that the cloud is moving azimuthally as well as longitudinally. The azimuthal motion has an m=1 spatial nature. The longitudinal modes have a more complicated nature, but their frequency equals that of the azimuthal mode.
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52.55.Jd Magnetic mirrors, gas dynamic traps

Effects of a multipole magnetic field on characteristics of a multifilament plasma source

Y. Oka and T. Kuroda

Appl. Phys. Lett. 34, 134 (1979); http://dx.doi.org/10.1063/1.90724 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A multipole magnetic field is applied in a multifilament plasma source. By changing the strength of the magnetic field, the instability of the discharge, the change of the density profile, and the increment of the ion density are investigated. It is shown that the stable plasma with a rather high density on the order of 1012 cm−3 and with a uniform density profile within ±5% over the 9‐cm diameter is obtained in the lower discharge current compared with the discharge without the magnetic field, and the total heater current of the filament can be reduced by about 10%. The ratio (0.93) of the discharge current to the heater current without a magnetic field is improved to 1.8 with the field.
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52.50.Dg Plasma sources
52.80.-s Electric discharges
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Measurement of gain on the XeF (C‐A) blue‐green band

R. M. Hill, P. L. Trevor, D. L. Huestis, and D. C. Lorents

Appl. Phys. Lett. 34, 137 (1979); http://dx.doi.org/10.1063/1.90725 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Transient gain has been observed on the C→A transition of XeF∗. Measurements made at 488.0 and 475.9 nm showed a peak gain of 8% through a short cell filled with Ar/Xe/NF3 mixtures and excited by a short electron‐beam pulse. A stimulated emission cross section of 5×10−18 cm2 is derived, consistent with the measured linewidth and radiative lifetime of the C‐A transition. Weaker amplification was observed at 514.5 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.90.+h Other topics in molecular properties and interactions with photons (restricted to new topics in section 33)

Brillouin spectrum of single‐mode optical fibers

N. L. Rowell, P. J. Thomas, H. M. van Driel, and G. I. Stegeman

Appl. Phys. Lett. 34, 139 (1979); http://dx.doi.org/10.1063/1.90726 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Experimental and theoretical results are presented for the Brillouin spectrum of single‐mode optical fibers in the 180° scattering geometry. It is shown that for core diameters less than 10 μm both the Brillouin frequency shift and spontaneous linewidth are influenced by the nature of the normal acoustic‐mode spectrum and wave‐vector nonconservation in the acousto‐optic interaction. The velocity and lifetime of longitudinal phonon excitations in the core are evaluated, and the consequences to stimulated Brillouin scattering assessed.
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42.81.-i Fiber optics
62.30.+d Mechanical and elastic waves; vibrations
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Laser calorimetric measurement of two‐photon absorption

Michael Bass, Eric W. Van Stryland, and A. F. Stewart

Appl. Phys. Lett. 34, 142 (1979); http://dx.doi.org/10.1063/1.90706 (3 pages) | Cited 27 times

Online Publication Date: 7 August 2008

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A laser calorimeter has been used to measure two‐photon absorption in solids. This new technique provides greater sensitivity than is possible in nonlinear transmission measurements. The two‐photon absorption coefficients of CdTe and CdSe at 1.06 μm using ∼16‐nsec (FWHM) pulses are 0.13±0.04 and 0.050±0.014 cm/MW, respectively.
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42.25.Bs Wave propagation, transmission and absorption
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.-v Laser optical systems: design and operation

Photoacoustic Raman spectroscopy (PARS) using cw laser sources

Joseph J. Barrett and Michael J. Berry

Appl. Phys. Lett. 34, 144 (1979); http://dx.doi.org/10.1063/1.90707 (3 pages) | Cited 27 times

Online Publication Date: 7 August 2008

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Show Abstract
We have devised a new nonlinear spectroscopic technique, photoacoustic Raman spectroscopy (PARS), which uses acoustic methods to detect energy deposited in a molecular gas by the process of stimulated Raman scattering. The technique was demonstrated by stimulated Raman excitation of the 2916.7‐cm−1 ν1 symmetric stretch vibrational mode of CH4 using two cw laser sources (an argon ion laser at 514.5 nm and a tunable dye laser near 605.4 nm). Excellent agreement between calculated and experimentally observed PARS signals was obtained for CH4.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
43.58.+z Acoustical measurements and instrumentation
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
51.70.+f Optical and dielectric properties

High‐efficiency AlGaAs/GaAs concentrator solar cells

R. Sahai, D. D. Edwall, and J. S. Harris

Appl. Phys. Lett. 34, 147 (1979); http://dx.doi.org/10.1063/1.90708 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Efficiencies of 25% have been obtained with 1‐cm‐diam AlGaAs/GaAs heteroface concentrator solar cells utilizing an ultrathin AlGaAs window layer design. A low specific resistance (<0.005 Ω cm2) Ohmic contact is achieved by direct contact to the p‐GaAs active layer. Liquid phase epitaxy has been developed to grow <500‐Å thick window layers on large‐area (3.3×3.3 cm) GaAs substrates. Four 1‐cm‐diam cells are produced from each wafer and demonstrate the potential for larger‐scale production.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Inversion of atoms and molecules to the ground state by optical pumping

R. W. Falcone

Appl. Phys. Lett. 34, 150 (1979); http://dx.doi.org/10.1063/1.90709 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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A technique is proposed for inverting atoms and molecules with respect to the ground state. The process is based on simultaneous excitation of colliding species by absorption of a photon. Visible wavelength lasers with millijoule energy outputs and several nanosecond pulse widths should be capable of demonstrating inversion of resonance lines in high‐density metal‐vapor mixtures.
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32.80.Xx Level crossing and optical pumping
33.80.Be Level crossing and optical pumping
42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment

Laser‐induced recrystallization and damage in GaAs

Raphael Tsu, John E. Baglin, Gordon J. Lasher, and James C. Tsang

Appl. Phys. Lett. 34, 153 (1979); http://dx.doi.org/10.1063/1.90710 (3 pages) | Cited 36 times

Online Publication Date: 7 August 2008

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We have investigated the recrystallization of ion‐implanted amorphous GaAs using a frequency‐doubled 10−8‐s pulsed Nd : YAG laser. The best results were obtained by spatially overlapping laser pulses at 20 MW/cm2. At power densities above 20 MW/cm2, not only does the GaAs surface begin to show uneven solidification, but also an increasing degree of disorder is revealed in Raman scattering and by a broad hump in the spectrum of channeled He‐ion backscattering. This laser‐induced damage is similar for single‐crystal and ion‐implanted GaAs samples. We attribute the damage at high power densities to the loss of arsenic and subsequent rapid cooling of a gallium‐rich liquid.
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79.20.Ds Laser-beam impact phenomena
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Amorphous silicon as a passivant for crystalline silicon

J. I. Pankove and M. L. Tarng

Appl. Phys. Lett. 34, 156 (1979); http://dx.doi.org/10.1063/1.90711 (2 pages) | Cited 23 times

Online Publication Date: 7 August 2008

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Hydrogenated amorphous silicon deposited on a p‐n junction in crystalline silicon causes a two‐order‐of‐magnitude reduction in leakage current compared to the performance of a state‐of‐the‐art thermal oxide passivant.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.-z Semiconductor devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.-r Conductivity of specific materials

Unified weak‐field magnetoresistance phenomenology for cubic and noncubic (001)‐ and (111)‐oriented epitaxial films and surface layers

R. S. Allgaier, J. B. Restorff, and Bland Houston

Appl. Phys. Lett. 34, 158 (1979); http://dx.doi.org/10.1063/1.90712 (2 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Extensions of the Seitz‐Pearson‐Suhl weak‐field magnetoresistance (WFMR) formula are applied to cubic and noncubic (001) ‐ and (111) ‐oriented epitaxial films and surface layers, including the extreme case of two‐dimensional conductivity in a quantized layer. It is shown that four distinct WFMR measurements may be made on samples in either plane, thus providing a simple and reliable means of distinguishing cubic from noncubic transport environments.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.61.-r Electrical properties of specific thin films

Electrical conductivity of Ge films during laser‐induced crystallization

M. Lovato, M. Wautelet, and L. D. Laude

Appl. Phys. Lett. 34, 160 (1979); http://dx.doi.org/10.1063/1.90713 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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The electrical conductivity of Ge films is traced during and after pulsed medium power laser irradiation (≲1 kW/pulse, 10−6‐sec pulse duration). A model is given which allows one to understand the physical processes involved in laser‐induced crystallization, namely, the influence of the film‐substrate interface on nucleation, crystal size, and crystal growth.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Rs Electrical and magnetic properties related to treatment conditions

A densely packed monolithic linear array of GaAs‐AlxGa1−xAs strip buried heterostructure laser

W. T. Tsang, R. A. Logan, and R. P. Salathe

Appl. Phys. Lett. 34, 162 (1979); http://dx.doi.org/10.1063/1.90714 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Strip buried heterostructure lasers were formed with a center‐to‐center spacing of 15 μm to give a densely packed monolithic linear array. Excellent uniformity in individual laser characteristics persisted across the entire array. The laser output power‐current characteristics of such arrays were linear and symmetric from both mirrors for the entire injection current range up to catastrophic damage. Pulsed‐out power of ∼1.6 W/mirror has been obtained for a five‐laser array. Spectral behavior of the arrays indicated that there was some field interaction between the neighboring lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Silicon implantation in GaAs

J. L. Tandon, M‐A. Nicolet, and F. H. Eisen

Appl. Phys. Lett. 34, 165 (1979); http://dx.doi.org/10.1063/1.90715 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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The electrical properties of room‐temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×1013 to 1.7×1015 cm−2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low‐dose implants, high (∼90%) electrical activation of the implanted ions is achieved and the depth distribution of the free‐electron concentration in the implanted layer roughly follows a Gaussian. However, for high‐dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range.
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61.80.Jh Ion radiation effects
72.80.Ey III-V and II-VI semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Ion‐beam‐induced silicide formation

B. Y. Tsaur, Z. L. Liau, and J. W. Mayer

Appl. Phys. Lett. 34, 168 (1979); http://dx.doi.org/10.1063/1.90716 (3 pages) | Cited 65 times

Online Publication Date: 7 August 2008

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Rutherford‐backscattering spectrometry and x‐ray‐diffraction analysis have been used to investigate intermixing between thin metal films (Pt, Ni, and Hf) and silicon substrates as a result of inert‐gas ion bombardment. Silicide phases (Pt2Si, Ni2Si, and HfSi) were observed near the interface as long as the ion range exceeds the film thickness. For a fixed dose, the silicide thickness increases with the atomic mass of both ion and metal and is greater for Pt2Si than HfSi. The growth of Pt2Si showed a square‐root dependence on ion dose for Ar, Kr, and Xe ions. The phenomenon of ion‐induced silicide formation is similar to formation resulting from thermal anneal until the whole metal film is consumed in the reaction, at which point a progressive intermixing to redistribute the metal into deeper regions of the sample occurred along with the disappearance of the structure diffraction patterns.
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61.80.Jh Ion radiation effects
61.66.Bi Elemental solids
61.66.Dk Alloys
64.75.-g Phase equilibria
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Temperature dependence of transient capacitance of Al/SiO2/Si capacitors

R. Bharat, E. T. Fitzgibbons, and J. E. LaPrade

Appl. Phys. Lett. 34, 170 (1979); http://dx.doi.org/10.1063/1.90717 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The capacitance transient of an aluminum/silicon dioxide/n‐silicon structure in response to a negative voltage step applied to the aluminum electrode was measured at several temperatures between +70 and −40 °C. The automated measurement method is outlined and the data obtained are interpreted in terms of an activation energy for minority‐carrier generation. The activation energy is 0.64 eV, which is not identifiable as any known impurity level in silicon.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
84.32.Tt Capacitors

The influence of preparation conditions on the hydrogen content of amorphous glow‐discharge silicon

M. Milleville, W. Fuhs, F. J. Demond, H. Mannsperger, G. Müller, and S. Kalbitzer

Appl. Phys. Lett. 34, 173 (1979); http://dx.doi.org/10.1063/1.90718 (2 pages) | Cited 30 times

Online Publication Date: 7 August 2008

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The hydrogen content in a‐Si films prepared by the glow‐discharge technique has been studied as a function of preparation conditions. From the γ‐ray yield of the nuclear reaction 1H(15N,αγ)  12C we find hydrogen contents ranging from 4 up to 50 at.%, depending largely on the deposition temperature of the films. Depth profiles show that hydrogen is incorporated uniformly into the films.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Generation of horizontally polarized shear waves in ferromagnetic materials using magnetostrictively coupled meander‐coil electromagnetic transducers

R. Bruce Thompson

Appl. Phys. Lett. 34, 175 (1979); http://dx.doi.org/10.1063/1.90719 (3 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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A new electromagnetic transducer configuration is described for generating horizontally polarized shear (SH) waves in ferromagnetic materials. The transducer consists of a meander coil and static bias magnetic field parallel to the coil elements. This configuration generates no ultrasonic waves in a nonmagnetic metal since the induced eddy currents are parallel to the bias field and the driving Lorentz forces vanish. However, the configuration provides coupling to SH waves in ferromagnetic materials through magnetostrictive effects. Experimental measurements of the variation of transduction efficiency with bias field in nickel and 4130 steel plate are presented and compared to the efficiency obtained with the same meander coils when the bias is rotated 90° in the plane of the plate so that antisymmetric Lamb waves are generated. Peak efficiencies occur at considerably different bias fields for the two configurations. This result, as well as other features in the data, are interpreted in terms of a simple model.
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75.80.+q Magnetomechanical effects, magnetostriction
43.38.Dv Electromagnetic and electrodynamic transducers
62.30.+d Mechanical and elastic waves; vibrations
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