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1 Feb 1979

Volume 34, Issue 3, pp. 179-243

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A model for predicting acoustic material signatures

R. D. Weglein

Appl. Phys. Lett. 34, 179 (1979); http://dx.doi.org/10.1063/1.90741 (3 pages) | Cited 51 times

Online Publication Date: 7 August 2008

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Unique acoustic material signatures (AMS) may be obtained in the reflection acoustic microscope. The proposed model shows that they result from interference between two components reradiated into the immerson fluid at the materials critical Rayleigh angle ϑR. The characteristic period ΔzN of this interference signature varies as the square of the Rayleigh wave velocity and is empirically given by ΔzN=λR/sinϑR, where λR is the Rayleigh wavelength. Materials covering a greater than 3 : 1 velocity range agree well with this physical model. Substitution of the longitudinal wave velocity in the expression extends the range of measurable AMS to acoustically slower materials. A variety of applications for AMS is suggested.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
06.30.Gv Velocity, acceleration, and rotation
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

The acoustic measurement of stress intensity factors

M. T. Resch, B. T. Khuri‐Yakub, G. S. Kino, and J. C. Shyne

Appl. Phys. Lett. 34, 182 (1979); http://dx.doi.org/10.1063/1.90742 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The maximum stress intensity factor of a surface crack has been inferred by measuring the reflection coefficient of a Rayleigh wave incident to the crack. An acoustic surface wave wedge transducer was used to excite the incident wave and to measure the reflected‐wave amplitude. The fracture stress of Pyrex glass specimens containing the acoustically measured cracks was determined in biaxial flexure. The values of the fracture stress predicted from acoustic data were found to be in excellent agreement with the measured values, with less than a 15% error.
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46.50.+a Fracture mechanics, fatigue and cracks
43.20.Fn Scattering of acoustic waves
62.20.M- Structural failure of materials
43.35.Pt Surface waves in solids and liquids

Smooth multilayer films suitable for x‐ray mirrors

Rolf‐Peter Haelbich, Armin Segmüller, and Eberhard Spiller

Appl. Phys. Lett. 34, 184 (1979); http://dx.doi.org/10.1063/1.90743 (3 pages) | Cited 29 times

Online Publication Date: 7 August 2008

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Multilayer coatings consisting of very smooth ReW and carbon films used as near‐normal‐incidence reflectors show theoretical performance in the 150–200‐Å wavelength region and should allow the fabrication of useful normal‐incidence mirrors for wavelengths as short as 50 Å.
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42.79.Bh Lenses, prisms and mirrors
07.85.-m X- and γ-ray instruments
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron‐attachment rate constant for Cl2 at room temperature and 250 °C

M. Rokni, J. H. Jacob, and J. A. Mangano

Appl. Phys. Lett. 34, 187 (1979); http://dx.doi.org/10.1063/1.90744 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The electron‐attachment rate constant for Cl2 has been measured in mixtures of N2/Cl2 and Ar/Cl2 at room temperature and at 250 °C in an electron‐beam‐controlled discharge. From these measurements and the use of a numerical solution of the Boltzmann equation we have been able to calibrate the relative electron‐attachment cross section of Cl2 that has been measured by Tam and Wong and by Kurepa and Belic. The peak value of this cross section that gives the best fit to our data is 2.2×10−16 cm2 at room temperature.
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34.80.Gs Molecular excitation and ionization
42.55.-f Lasers

Experimental results on the multiphoton ionization of molecular nitrogen

G. Baravian, J. Godart, and G. Sultan

Appl. Phys. Lett. 34, 190 (1979); http://dx.doi.org/10.1063/1.90745 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The experimental study of the multiphoton ionization (MPI) of nitrogen by a neodymium glass laser gives the value n=13±2 for the nonlinear interaction order and a maximum kinetic energy of 3 eV for the produced charges. An analysis of the multiphoton absorption processes is made taking the experimental results into account.
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33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Triode plasma etching

V. J. Minkiewicz and B. N. Chapman

Appl. Phys. Lett. 34, 192 (1979); http://dx.doi.org/10.1063/1.90746 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Reactive‐plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three‐electrode, or triode, configuration is described in which these two functions are controlled quasi‐independently; results obtained with this arrangement are described. These results are somewhat similar to those obtained with a diode RIE system, except that control of the substrate voltage allows another degree of freedom over etch rates, etch selectivity, and wall profiles.
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52.75.-d Plasma devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Chemical effect in (LVV) Auger spectra of third‐period elements (Al, Si, P, and S) dissolved in copper

A. Hiraki, S. Kim, W. Kammura, and M. Iwami

Appl. Phys. Lett. 34, 194 (1979); http://dx.doi.org/10.1063/1.90747 (2 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Valence electronic states of third‐period elements (Al, Si, P, and S) dissolved in Cu were pursued through the chemical effect of the LVV Auger transition from these elements using Auger electron spectroscopy (AES). Indeed, the LVV Auger signals of Al, Si, P, and S in Cu hosts differed completely from those in the pure (metal or semiconductor) states, indicating the presence of the definite chemical effect. The origin of the chemical effect was discussed in connection with similar studies by soft x‐ray spectroscopy (SXS).
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79.20.Fv Electron impact: Auger emission
32.80.Hd Auger effect (including Coster-Krönig transitions)
71.20.-b Electron density of states and band structure of crystalline solids

Laser‐damage‐resistant transparent conductive indium tin oxide coatings

W. T. Pawlewicz, I. B. Mann, W. H. Lowdermilk, and D. Milam

Appl. Phys. Lett. 34, 196 (1979); http://dx.doi.org/10.1063/1.90727 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Transparent conductive coatings of In1.9Sn0.1O3 have been made on fused silica which exhibit damage thresholds of 2.2 and 3.1 J/cm2 for 0.15‐ and 1‐nsec Nd : glass laser pulses, respectively. The coatings were made by reactive sputtering in an rf diode system. Coating absorption detected spectrophotometrically was less than 1% (∼300 cm−1) near 1064 nm for coatings with in‐plane resistivities of 0.017 and 0.55 Ω cm. An important potential application for such coatings is as the electrode for electro‐optic shutters based on the longitudinal Pockels effect which are used in high‐energy laser systems.
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42.79.Wc Optical coatings
42.60.Fc Modulation, tuning, and mode locking
79.20.Ds Laser-beam impact phenomena
75.20.Ck Nonmetals

Angle‐of‐incidence effects in electron‐beam‐deposited SnO2/Si solar cells

Tom Feng, Amal K. Ghosh, and Charles Fishman

Appl. Phys. Lett. 34, 198 (1979); http://dx.doi.org/10.1063/1.90728 (2 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The power‐conversion efficiency of SnO2/Si solar cells fabricated by electron‐beam evaporation of SnO2 is strongly dependent on the angle of incidence of the SnO2 vapor stream on silicon. The optimum angle of incidence is between 50° and 70°. Solar cells with power‐conversion efficiencies exceeding 10% have been reproducibly fabricated by depositing the SnO2 at angles of incidence in this optimum range.
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68.55.-a Thin film structure and morphology
84.60.Jt Photoelectric conversion
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Optical damage thresholds of thin‐film and in‐diffused waveguides

R. Normandin, V. C. Y. So, G. A. Teh, and G. I. Stegeman

Appl. Phys. Lett. 34, 200 (1979); http://dx.doi.org/10.1063/1.90729 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The behavior of a number of glass and Ti in‐diffused LiNbO3 waveguides was investigated as a function of laser power, and the damage thresholds were evaluated and compared to the bulk material values.
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79.20.Ds Laser-beam impact phenomena
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Temperature dependence of recombination rate constants for KrF∗+R+R→RKrF∗+R (R=Ar,Kr)

Ven H. Shui

Appl. Phys. Lett. 34, 203 (1979); http://dx.doi.org/10.1063/1.90730 (2 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The temperature dependence of recombination rate constants for KrF∗+R+R→RKrF∗+R (R=Ar,Kr) has been calculated by using the classical phase‐space theory in the temperature range 300–800 °K. The steep (negative) temperature dependence obtained indicates the possibility of increasing the overall KrF∗ laser efficiency by raising the operating temperature.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
34.10.+x General theories and models of atomic and molecular collisions and interactions (including statistical theories, transition state, stochastic and trajectory models, etc.)
82.20.Wt Computational modeling; simulation

Raman scattering from anodic oxide‐GaAs interfaces

G. P. Schwartz, B. Schwartz, D. DiStefano, G. J. Gualtieri, and J. E. Griffiths

Appl. Phys. Lett. 34, 205 (1979); http://dx.doi.org/10.1063/1.90731 (3 pages) | Cited 30 times

Online Publication Date: 7 August 2008

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The nature of the interface between anodically grown oxide films and gallium arsenide substrates was studied using Raman backscattering. Room‐temperature spectra of GaAs covered with as‐grown anodic films as well as anodized samples dried under nitrogen at 250°C showed only the first‐order longitudinal (LO) and transverse (TO) optical modes and the less‐intense two‐phonon features of the GaAs substrate. Heating the films at 450°C and above results in the appearance of intense LO (257 cm−1) and TO (198 cm−1) bands due to crystalline arsenic and the structureless Raman scattering near 200–250 cm−1 due to amorphous arsenic. Polarized Raman spectra indicate that elemental arsenic is not an intrinsic oxidation product of the room‐temperature anodization. We suggest that the thermally induced solid‐state interfacial reaction, As2O3+2GaAs→Ga2O3+4As, is responsible for the presence of arsenic at the oxide‐semiconductor interface following annealing.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Improvement in XeF laser efficiency at elevated temperatures

J. C. Hsia, J. A. Mangano, J. H. Jacob, and M. Rokni

Appl. Phys. Lett. 34, 208 (1979); http://dx.doi.org/10.1063/1.90732 (3 pages) | Cited 34 times

Online Publication Date: 7 August 2008

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Improvement in e‐beam‐pumped XeF laser efficiency is reported when the laser is operated at temperatures above 300 °K. The improvement is due predominantly to improved energy extraction from the upper laser level as well as decreased lower level lifetime. The highest intrinsic laser efficiency (laser energy out/e‐beam energy deposited in the active medium) observed at 3 amagats and 450 K is 5.5%. The temperature at which the highest efficiency is achieved is observed to increase with increasing gas density.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Pulsed transverse electrodeless discharge excitation of a CO2 laser

C. P. Christensen

Appl. Phys. Lett. 34, 211 (1979); http://dx.doi.org/10.1063/1.90733 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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A pulsed electric discharge between two dielectric sheets which is suitable for laser excitation is reported. CO2 laser operation at pressures extending to 650 Torr in unpreionized He/N2/CO2 mixtures is obtained in experiments demonstrating the utility of the technique. Limitations imposed by dielectric parameters are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Ultra‐high‐gain laser‐produced plasma laser in xenon using periodic pumping

W. T. Silfvast, L. H. Szeto, and O. R. Wood II

Appl. Phys. Lett. 34, 213 (1979); http://dx.doi.org/10.1063/1.90734 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Gain and power output from a transversely initiated CO2 laser‐produced plasma laser in xenon were dramatically increased by introducing a periodic spatial variation in the 10.6‐μm pumping radiation. Small‐signal gains over 55%/cm of excitation length were measured.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Semiconducting CdF2 : Mn—A new material for efficient blue‐green electroluminescence

T. Langer, B. Krukowska‐Fulde, and J. M. Langer

Appl. Phys. Lett. 34, 216 (1979); http://dx.doi.org/10.1063/1.90735 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Efficient blue‐green (λmax=520 nm) electroluminescence in MIS structures on CdF2 : Mn Y crystals was obtained. The structures are driven by asymmetric voltage pulses with accelerating amplitude in the range 50–100 V and active current density less than 10−5 A/cm2. The average quantum and power efficiencies at 10 fL exceeding 10 and 0.5%, respectively, and a uniform emitting area up to 1 cm2 were achieved, indicating the suitability of CdF2 : Mn for display purposes.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.40.Fy Semiconductors

A modulated submillimeter‐laser polarimeter for the measurement of the Faraday rotation by a plasma

C. H. Ma, D. P. Hutchinson, and K. L. Vander Sluis

Appl. Phys. Lett. 34, 218 (1979); http://dx.doi.org/10.1063/1.90736 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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To determine current‐density profiles in toroidal plasmas, a submillimeter‐laser polarimeter was fabricated and its perfomance assessed. Measurements of simulated plasma Faraday rotations demonstrated a sensitivity of 26 mV/mrad for an optically pumped 4‐mW 393‐μm far‐infrared (FIR) laser and a polarization modulation angle of 149 mrad. Time resolution of the order of milliseconds was obtained.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
07.60.Fs Polarimeters and ellipsometers
42.79.Hp Optical processors, correlators, and modulators

Laser annealing for solid‐phase thin‐film reactions

Z. L. Liau, B. Y. Tsaur, and J. W. Mayer

Appl. Phys. Lett. 34, 221 (1979); http://dx.doi.org/10.1063/1.90737 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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We propose a scheme for calculating the amount of thin‐film reaction as a result of the pulsed annealing induced by laser irradiation. Under ideal conditions, simple analytical solutions are obtained for reaction temperature T (t) if the absorbed laser power P (t) is a step, linear, or polynomial function of t. The thickness of the reacted film is equivalent to that of a thermal (furnace) annealing at an effective temperature Teff for an effective annealing time Δteff. Teff is the peak value of T (t) and Δteff ≃ (kTeff/Ea)mΔt, where m=1 or 1/2 [determined by the function form of T (t) near Teff], Ea is the activation energy of the process, and Δt is the duration of the laser pulse. The present results can also be used as an approximation in some cases of the laser annealing of ion‐implanted semiconductors. Effect of antireflective coatings is thus predicted. Preliminary experimental results on the laser annealing for metal‐silicide formation are discussed and are compared with the present calculation.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology

Long‐range enhancement of boron diffusivity induced by a high‐surface‐concentration phosphorus diffusion

D. Lecrosnier, M. Gauneau, J. Paugam, G. Pelous, and F. Richou

Appl. Phys. Lett. 34, 224 (1979); http://dx.doi.org/10.1063/1.90738 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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Enhanced boron diffusivity of buried implanted layers has been investigated when a shallow diffusion is performed with phosphorus. For low surface phosphorus concentration (<1019/cm3) no diffusion of boron was observed, but for higher values (≳1020/cm3) a strong diffusion occurs. This enhancement is a function of the distance between the boron layer and surface phosphorus diffusion. Results are explained by vacancy‐type defects generated during the phosphorus diffusion. A 30‐μm diffusion length is found for these defects.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.jd Vacancies
61.72.jj Interstitials
61.72.U- Doping and impurity implantation

Deep exponential distribution of traps in naphthalene

M. Campos, J. A. Giacometti, and M. Silver

Appl. Phys. Lett. 34, 226 (1979); http://dx.doi.org/10.1063/1.90739 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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The long‐time decay of the surface potential of corona‐charged naphthalene crystals has been analyzed. The decay curves are explained using an exponential distribution of traps of the form exp[−(E−1.1 eV)/kTc], where Tc∼600 °K. The total number of traps is estimated to be approximately 1013/cm3. The long‐time decay is also evidence for dispersive transport in crystalline material due to a distribution of traps.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.-r Electron states at surfaces and interfaces

p‐n junction diodes in InP and In1−xGaxAsyP1−y fabricated by beryllium‐ion implantation

C. A. Armiento, J. P. Donnelly, and S. H. Groves

Appl. Phys. Lett. 34, 229 (1979); http://dx.doi.org/10.1063/1.90740 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Mesa and planar InP p‐n junction diodes have been fabricated by beryllium‐ion implantation. These devices exhibit abrupt reverse‐bias breakdowns and low leakage currents. Similar mesa diodes have been produced in In1−xGaxAsyP1−y (Eg≈1.0 eV). Diodes operated in the punch‐through mode exhibited uniform breakdown over the area of the device, without any apparent edge effects.
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61.72.U- Doping and impurity implantation
85.30.Kk Junction diodes
72.80.Ey III-V and II-VI semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors

RED display structures having dynamic hysteresis characteristics

L. G. Van Uitert, I. Camlibel, R. M. DeLaRue, T. R. Kyle, R. Pawelek, S. Singh, H. J. Stocker, and G. J. Zydzik

Appl. Phys. Lett. 34, 232 (1979); http://dx.doi.org/10.1063/1.90748 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Display structures based on reversible electrodeposition (RED) in organic solvent based electrolytes containing tetra‐alkyl ammonium iodide, ammonium iodide, and silver iodide have been studied. Cells were made up with these electrolytes together with a mixed opacifier containing a semiconducting oxide (such as impure TiO2) and an insulator (such as a very fine zeolite powder). The cells develop bistable characteristics which permit operation with good contrast (between deep burgundy and white) at drive voltages of less than 2 V while operating at 0.5 Hz. Contrast ratio, optical density, efficiency, and memory time were measured. Probable mechanisms for the development of bistable characteristics and the nature of the deposits are discussed.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
82.45.-h Electrochemistry and electrophoresis
82.47.-a Applied electrochemistry
85.60.Pg Display systems

Electronic density of states in discharge‐produced amorphous silicon

M. Hirose, T. Suzuki, and G. H. Döhler

Appl. Phys. Lett. 34, 234 (1979); http://dx.doi.org/10.1063/1.90749 (3 pages) | Cited 66 times

Online Publication Date: 7 August 2008

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The localized state density distribution in the mobility gap of glow‐discharge amorphous silicon has been determined from capacitance‐voltage characteristics for metal/oxide/amorphous silicon (MOS) structures. This new method provides a smooth distribution of localized states throughout the mobility gap. The density of states increases from a minimum of the order of 1016 cm−3 eV−1 near midgap to more than 1018–1019 cm−3 eV−1 within 0.2 eV of the band edges.
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71.20.-b Electron density of states and band structure of crystalline solids
71.23.-k Electronic structure of disordered solids
78.40.Fy Semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

R. P. H. Chang, J. J. Coleman, A. J. Polak, L. C. Feldman, and C. C. Chang

Appl. Phys. Lett. 34, 237 (1979); http://dx.doi.org/10.1063/1.90750 (2 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Direct observation of two‐dimensional lattice mismatch parallel to the interfacial boundary between the LPE Ga0.65Al0.35As layer and the GaAs substrate

Shih‐Lin Chang

Appl. Phys. Lett. 34, 239 (1979); http://dx.doi.org/10.1063/1.90751 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Previously unreported two‐dimensional lattice mismatch in planes parallel to the interfacial boundary between the (001) Ga0.65Al0.35As epitaxial layer and the GaAs substrate has been observed by utilizing a four‐beam, (000), (400), (220), and (220), simultaneous Borrmann diffraction of x rays. The shifts of the reflection bands of the layer from the reflection lines of the substrate indicate that shear stresses exist in 〈100〉 and 〈010〉 directions and that the corresponding strains vary continuously along the thickness direction of the epilayer.
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68.55.-a Thin film structure and morphology
61.05.C- X-ray diffraction and scattering
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