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15 Feb 1979

Volume 34, Issue 4, pp. 247-302


Estimation of plasma temperature from recombination continuum

B. K. Sinha

Appl. Phys. Lett. 34, 247 (1979); http://dx.doi.org/10.1063/1.90768 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The reliability of the estimation of plasma temperature for a carbon plasma from bremsstrahlung emissions has been assessed using the steady‐state corona model for the ionization states. It is observed that even at a temperature as high as 225 eV the temperature estimated from the bremsstrahlung continuum can give an error as high as 55%, whereas the temperature estimated from the recombination continuum can be taken as the true temperature of the plasma.
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52.70.-m Plasma diagnostic techniques and instrumentation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Work function of sintered lanthanum hexaboride

J. Pelletier and C. Pomot

Appl. Phys. Lett. 34, 249 (1979); http://dx.doi.org/10.1063/1.90769 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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A work function of 2.36 eV and a Richardson constant of 120 A/cm2 K2 have been measured for a hot‐pressed porous lanthanum hexaboride rod cathode. It is shown that the LaB6 work function is highly susceptible to poisoning by molybdenum deposited at high temperatures during experiments. A stable work function of about 2.7 eV is then measured. After removal of the molybdenum by atomic iodine flux, the work function of clean LaB6 is restored.
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79.40.+z Thermionic emission
73.30.+y Surface double layers, Schottky barriers, and work functions

Shock focusing in implosions of inertial fusion model targets

F. C. Perry, L. P. Mix, and A. J. Toepfer

Appl. Phys. Lett. 34, 251 (1979); http://dx.doi.org/10.1063/1.90770 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Implosions of high‐gain targets for inertial confinement fusion must be highly spherically symmetric for efficient ignition. Using a single relativistic electron beam at low power (∼0.3 TW) and cylindrical targets, we have experimentally shown that loading asymmetries generate strong implosion asymmetries, resulting in poor convergence ratios. By introducing a nonspherical variation in the shell radius and thickness (shimming), the implosion symmetry is radically improved at one time during the implosion. The effect is explained by a shock focusing mechanism whereby ultrahigh pressure—0.9 Tpa (9 Mbar) —is achieved on one side of the target.
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47.40.Nm Shock wave interactions and shock effects
28.52.-s Fusion reactors
52.58.-c Other confinement methods

An 18O study of the thermal oxidation of silicon in oxygen

E. Rosencher, A. Straboni, S. Rigo, and G. Amsel

Appl. Phys. Lett. 34, 254 (1979); http://dx.doi.org/10.1063/1.90771 (3 pages) | Cited 94 times

Online Publication Date: 7 August 2008

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The mechanism of thermal oxidation of silicon in dry oxygen was studied using 18O as the tracer. SiO2 layers first grown in natural oxygen (1300–3000 Å) were further grown in highly 18O‐enriched oxygen for 8.5 h at 930 °C. 18O profiling was carried out using the 629‐keV narrow resonance in the nuclear reaction 18O(p,α)  15N. The resulting SiO2 films consist of two 18O‐rich layers, 7% near the SiO2 surface and 93% near the Si‐SiO2 interface, while the bulk 18O concentration is very low. The results suggest that the oxide grows mainly through long‐range migration of oxygen, favoring models based on the transport of molecular oxygen.
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81.65.-b Surface treatments
66.30.H- Self-diffusion and ionic conduction in nonmetals
68.55.-a Thin film structure and morphology
29.90.+r Other topics in elementary-particle and nuclear physics experimental methods and instrumentation (restricted to new topics in section 29)

Nature of the 0.111‐eV acceptor level in indium‐doped silicon

R. Baron, J. P. Baukus, S. D. Allen, T. C. McGill, M. H. Young, H. Kimura, H. V. Winston, and O. J. Marsh

Appl. Phys. Lett. 34, 257 (1979); http://dx.doi.org/10.1063/1.90772 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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Strong evidence is presented that the X‐level defect, which produces a 0.111‐eV acceptor level in Si : In, is a substitional In–substitutional C (Ins‐Cs) pair. The concentration of this defect follows a mass‐action law with the In and C concentrations, the association constant being (1.4±0.3) ×10−19 cm−3 at 650 °C. Reversible changes in the X‐level concentration between anneal temperatures of 650 and 850 °C are observed, and a pair binding energy of 0.7±0.1 eV is estimated. The electronic properties and temperature dependence of the concentration of this center are found to be those expected for a nearest‐neighbor Ins‐Cs pair.
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78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.My Galvanomagnetic and other magnetotransport effects
78.30.-j Infrared and Raman spectra

High‐power coupled‐multiple‐stripe phase‐locked injection laser

D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 34, 259 (1979); http://dx.doi.org/10.1063/1.90773 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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A semiconductor injection device consisting of 10 periodically spaced filaments coupled by curved waveguide sections has been demonstrated. This coupled‐multiple‐stripe (CMS) laser produces a phase‐locked TE polarized beam with a linear powerd–vs–pumping‐current characteristic up to 0.9 W/facet and a beam divergence of less than ≈4° along the p‐n junction plane in pulsed operation at room temperature. The threshold is 400 mA and differential quantum efficiencies of 65% are observed.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers

G. H. Olsen, C. J. Nuese, and M. Ettenberg

Appl. Phys. Lett. 34, 262 (1979); http://dx.doi.org/10.1063/1.90774 (3 pages) | Cited 26 times

Online Publication Date: 7 August 2008

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Vapor‐grown double‐heterojunction lasers of InGaAsP/InP have been prepared with cw room‐temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal‐lateral‐ and fundamental‐longitudinal‐mode operation have been observed over moderate current ranges. Over 1000 h of room‐temperature cw operation has been observed to date without significant degradation.
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42.60.By Design of specific laser systems
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

R. D. Dupuis, P. D. Dapkus, R. Chin, N. Holonyak, and S. W. Kirchoefer

Appl. Phys. Lett. 34, 265 (1979); http://dx.doi.org/10.1063/1.90753 (3 pages) | Cited 23 times

Online Publication Date: 7 August 2008

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Stripe‐geometry single‐quantum‐well AlxGa1−xAs‐GaAs double‐heterostructure laser diodes (Lz∼200 Å) grown by metalorganic chemical vapor deposition are shown to operate continuously at 300 °K on the first (n=1) electron–to–heavy–hole (e→hh) or first (n′=1′) electron–to–light–hole (e→lh) confined‐particle transitions (hω−Eg∼11 meV). These laser diodes exhibit an external differential quantum efficiency as high as ηext∼80% (output power 5.4 mW at 65 mA drive current).
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.45.+h Stimulated emission

Single‐polarization optical fibers: Slab model

I. P. Kaminow and V. Ramaswamy

Appl. Phys. Lett. 34, 268 (1979); http://dx.doi.org/10.1063/1.90754 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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Calculations for a simple three‐layer slab model show that sufficient anisotropic strain birefringence can be introduced into germanosilicate, phosphosilicate, and borosilicate single‐mode fibers to reduce the coupling between orthogonally polarized modes to a level of practical interest for single‐mode single‐polarization propagation.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Terraced‐substrate GaAs‐ (GaAl)As injection lasers

T. Sugino, M. Wada, H. Shimizu, K. Itoh, and I. Teramoto

Appl. Phys. Lett. 34, 270 (1979); http://dx.doi.org/10.1063/1.90755 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A new structure of stripe‐geometry lasers has been reported in which a double heterostructure is fabricated on a terraced substrate. Due to the lateral change of the effective refractive index along the junction plane, the optical gain distribution is restricted within a narrow stripe between two adjacent bends of the active layer regardless of the current spreading. This simple structure constantly exhibits a fundamental longitudinal mode oscillation as well as a single transverse‐mode oscillation. No kinks have been observed in light‐output‐current characteristics. The linearity continues up to 10 times the threshold where the power output is 150 mW/facet.
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42.55.Px Semiconductor lasers; laser diodes
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

cw oscillation in a Nd : phosphate glass laser

S. Kishida, K. Washio, S. Yoshikawa, and Y. Kato

Appl. Phys. Lett. 34, 273 (1979); http://dx.doi.org/10.1063/1.90756 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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A stable cw operation in a Nd : phosphate glass laser has been acheived for the first time. An end‐pumping scheme with an Ar laser in combination with a new kind of phosphate glass material has been successfully used to reduce thermal problems. More than 10 mW cw output power has been obtained in the TEM00 mode.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Ce Glasses, quartz
42.25.Lc Birefringence
78.20.Fm Birefringence

High‐performance Te trilayer for optical recording

A. E. Bell and R. A. Bartolini

Appl. Phys. Lett. 34, 275 (1979); http://dx.doi.org/10.1063/1.90757 (2 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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The optical‐recording characteristics of a fully encapsulated Te trilayer structure are reported. The results demonstrate a 400% improvement in sensitivity compared to a Ti trilayer, at a recording wavelength of 488 nm, while maintaining high SNR (≳50 dB) on playback. This Te trilayer can be optimized for use with a GaAs diode laser recording system.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.70.Gi Light-sensitive materials
42.62.-b Laser applications

A new technique for the determination of isotopic species using Zeeman scanning of an atomic line

Hideaki Koizumi, Tetsuo Hadeishi, and Ralph D. McLaughlin

Appl. Phys. Lett. 34, 277 (1979); http://dx.doi.org/10.1063/1.90758 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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We measured the vibrational‐rotational line profiles of 14N 16O and 15N 16O in the electronic transition spectrum by using the magnetically scanned ion line of 114Cd(II) at 2165.017 Å. The observed separation between the line of 14N 16O, Q[10(1/2)] and the line of 15N 16O, Q2[11(1/2)] was 49.6 GHz, and the half‐width of these lines was 4.4 GHz. We could observe the line profile of 15N 16O in naturally occurring NO, even though its abundance is 0.37%. Also, the ratio 15N/14N in nitric acid was determined with this technique. The lower detection limit was about 50 ppb.
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32.30.Jc Visible and ultraviolet spectra
32.60.+i Zeeman and Stark effects
07.60.Dq Photometers, radiometers, and colorimeters

Chemical‐vapor‐deposited molybdenum films of high infrared reflectance

G. E. Carver and B. O. Seraphin

Appl. Phys. Lett. 34, 279 (1979); http://dx.doi.org/10.1063/1.90759 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Molybdenum thin films deposited by pyrolytic decomposition of molybdenum carbonyl attain, after anneal in a reducing atmosphere at 1000 °C, infrared reflectance values within 0.7% of the reflectance of supersmooth bulk molybdenum. This result combines the refractory nature of molybdenum with the high infrared reflectance generally associated with conventional mirror materials. The entire production sequence proceeds at atmospheric pressure and requires less than 1 h. The reflectance increase during anneal is related to compositional and structural properties of the films. The importance of this development to photothermal solar‐energy conversion and high‐energy laser technology is stressed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
75.20.Ck Nonmetals

A new technique for fabricating cryogenic laser‐fusion targets using cold‐gas jets

K. Kim, B. J. Smoot, R. L. Woerner, and C. D. Hendricks

Appl. Phys. Lett. 34, 282 (1979); http://dx.doi.org/10.1063/1.90760 (2 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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A new technique of fabricating a uniform layer of solid DT inside a glass microshell has been developed using a heater‐wire–cold‐gas‐jets combination. A D2‐filled glass microsphere was continuously cooled by two cold‐helium‐gas jets, and a controlled amount of current was pulsed through a heater wire surrounding the microshell. This gave rise to fast evaporation and refreezing of the D2 inside the glass shell, resulting in a uniform layer of frozen D2. This new scheme has potential application in the development of a target‐fabrication system which would allow for continuous fabrication, inspection, and delivery of cryogenic laser‐fusion targets.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)
81.30.Fb Solidification
07.60.Ly Interferometers

Selective optical excitation and inversions via the excimer channel: Superradiance at the thallium green line

Santaram Chilukuri

Appl. Phys. Lett. 34, 284 (1979); http://dx.doi.org/10.1063/1.90761 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Inversion and superradiance at the Tl green line (5351 Å) has been observed using Tl‐Hg and Tl‐Cd‐Ar systems pumped optically via the excimer channel with a pulsed nitrogen dye laser. Superradiant power outputs up to 200 W averaged over the pulse (without any mirrors) have been obtained with a 90‐cm‐long Tl‐Hg tube. The general applicability of this method to other excimer systems should provide a means of generating coherent radiation at new wavelengths and in understanding collision processes.
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32.80.Xx Level crossing and optical pumping
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Annealing behavior of the oxygen donor in silicon

Akihiro Kanamori

Appl. Phys. Lett. 34, 287 (1979); http://dx.doi.org/10.1063/1.90762 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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The behavior of the oxygen donor in Czochralski silicon crystals was investigated by resistivity measurement. Annealing at 475 °C was employed to produce an oxygen donor, and the donor concentration was reduced to some extent by heat treatment at 550 °C for 20 h. The results were compared with those reported in the 1950’s and 1960’s. The reduction rate was far smaller than that obtained in the 1950’s, and complete annihilation was not observed, even after 20‐h annealing. A model was proposed to interpret the difference in the reduction behavior of the oxygen donor between the old and today’s crystals, in terms of some species which neutralize the donor. A numerical calculation based on this model was made to predict the reduction behavior and was found to be in reasonable agreement with the experimental results.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Single layer conductance of cadmium behenate in the Langmuir multilayer assembly system

Michio Sugi and Sigeru Iizima

Appl. Phys. Lett. 34, 290 (1979); http://dx.doi.org/10.1063/1.90763 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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A frequency dispersion of conductance has been observed in a heterogeneous multilayer system of Cd‐behenate and Cd‐stearate in accordance with the hopping theory of the multilayer assemblies. The values of the single‐layer dc conductance evaluated for Cd‐behenate are consistent with those for palmitate, stearate, and arachidate, suggesting the availability of the heterogeneous multilayer system for the evaluation of the bulk conductivity of a single monolayer.
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73.61.Ng Insulators
73.40.Rw Metal-insulator-metal structures

The influence of LPE growth techniques on the alloy composition of InGaAsP

M. Feng, L. W. Cook, M. M. Tashima, T. H. Windhorn, and G. E. Stillman

Appl. Phys. Lett. 34, 292 (1979); http://dx.doi.org/10.1063/1.90764 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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In experiments on the LPE growth of InGaAsP on (100) ‐InP substrates, it has been found that constant‐composition epitaxial layers can be grown at constant temperature using the step‐cooling technique, while the equilibrium‐cooling, supercooling, and two‐phase‐solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step‐cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.
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81.10.Dn Growth from solutions

New experimental evidence for minority‐carrier MIS diodes

N. G. Tarr and D. L. Pulfrey

Appl. Phys. Lett. 34, 295 (1979); http://dx.doi.org/10.1063/1.90765 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Measurements of short‐circuit density Jsc and open‐circuit photovoltage Voc have been made over a range of illumination levels at various temperatures for Al‐SiOx‐pSi MIS photodiodes. It is found that at high illumination levels the data satisfy the relation Jsc=J0 exp(qVoc/kT), where J0 is a temperature‐dependent constant. By examining the variation of J0 with temperature it is conclusively demonstrated that the dark current in these diodes is dominated by minority‐carrier flow, confirming recent theoretical predictions.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices

Effect of cavity length on stripe‐geometry DH laser output linearity

R. T. Lynch, M. B. Small, and R. Y. Hung

Appl. Phys. Lett. 34, 297 (1979); http://dx.doi.org/10.1063/1.90766 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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We report here a strong correlation between cavity length and the severity of nonlinearities in light‐output–vs–current (P‐I) curves observed in oxide‐stripe geometry (GaAl)As DH lasers. Cleaving kinky long (∼500 μm) lasers results in two or more shorter (150–250 μm) units, all of which show kinks with reduced severity shifted to higher optical power. When cleaved short enough, the lasers show no kinks up to 25 mW. A similar result is seen when comparing units originally cleaved with long or short cavities. An explanation is offered in terms of the difference in lateral mode stability in long versus short lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

The technology of solid‐fuel‐layer targets for laser‐fusion experiments

D. L. Musinski, T. M. Henderson, T. R. Pattinson, and J. A. Tarvin

Appl. Phys. Lett. 34, 300 (1979); http://dx.doi.org/10.1063/1.90767 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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An apparatus which produces uniform solid‐fuel layers in glass‐shell targets for laser irradiation is described. A low‐power cw laser pulse is used to vaporize the fuel within a previously frozen target which is maintained in a cold‐helium environment by a cryogenic shroud. The rapid refreezing that follows the pulse forms a uniform fuel layer on the inner surface of the glass shell. This apparatus and technique meet the restrictions imposed by the experimental target chamber. The method does not perturb the target position; nor does it preclude the usual diagnostic experimets since the shroud is retracted before the main laser pulse arrives. Successful laser irradiation and implosion of solid‐fuel‐layer targets at KMSF have confirmed the effectiveness and reliability of this system and extended the range of laser‐target‐interaction studies in the cryogenic regime.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
81.20.-n Methods of materials synthesis and materials processing
89.20.Bb Industrial and technological research and development
89.30.-g Fossil fuels and nuclear power
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