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15 Mar 1979

Volume 34, Issue 6, pp. 353-419

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Pressure saturation of laser‐generated acoustic waves in liquids

M. W. Sigrist and F. K. Kneubühl

Appl. Phys. Lett. 34, 353 (1979); http://dx.doi.org/10.1063/1.90802 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The generation of acoustic waves in liquids by the impact of pulses from a hybrid CO2 laser has been studied in detail. With the aid of self‐developed piezoelectric transducers, a pressure saturation with increasing laser peak power has been demonstrated in carbon tetrachloride. This phenomenon is explained by a reduced absorptivity at higher laser power.
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79.20.Ds Laser-beam impact phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
43.58.+z Acoustical measurements and instrumentation

Multiple‐pass CO2 laser heating of a ϑ‐pinch plasma

R. D. Brooks, R. G. Watt, Z. A. Pietrzyk, and G. C. Vlases

Appl. Phys. Lett. 34, 355 (1979); http://dx.doi.org/10.1063/1.90803 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A 20‐cm‐long 3.6‐cm‐diam ϑ‐pinch plasma is placed within a coupled optical cavity of a 40‐J CO2 TEA laser as an active optical element. Ruby‐laser scattering is used to measure the plasma temperature for the non‐laser‐heated, the single‐pass, and the multiple‐pass laser‐heated plasmas. At times in the pinch cycle when holography shows a favorable density profile, multiple‐pass heating equivalent to over five passes of the single‐pass energy is observed.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Arc oscillations in a horizontal rare‐earth metal iodide/cesium iodide/mercury arc induced by an external magnetic field

W. J. van den Hoek and J. A. Visser

Appl. Phys. Lett. 34, 357 (1979); http://dx.doi.org/10.1063/1.90804 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A novel type of periodic motion has been observed in a horizontal 50‐Hz ac DyI3/CsI/Hg arc, placed in a magnetic field perpendicular to the arc axis. The arc oscillates in the vertical plane with frequencies of 0.5–5 Hz. A mechanism involving a time‐varying arc constriction due to periodic metal iodide evaporation and condensation is discussed in terms of the balance between Lorentz force and buoyant forces.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)

Intensity dependence of transmission of electromagnetic radiation through an overdense Z‐pinch plasma

John G. Ackenhusen and David R. Bach

Appl. Phys. Lett. 34, 360 (1979); http://dx.doi.org/10.1063/1.90805 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The interaction of a 10.6‐μm‐wavelength electromagnetic wave with an independently created overdense plasma has been investigated at incident intensities on either side of the field‐strength condition Vosc/Vth=1. An intensity threshold for transmission of the radiation through the overdense target plasma was observed near Vosc/Vth=1. Temporal behavior of the transmitted radiation pulse was compared to that of the incident pulse over an intensity range (0.1–4) ×1011 W/cm2.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.25.Dd Wave propagation in random media

A transient optical reflectivity study of laser annealing of ion‐implanted silicon: Thresholds and kinetics

Y. S. Liu and K. L. Wang

Appl. Phys. Lett. 34, 363 (1979); http://dx.doi.org/10.1063/1.90806 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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By probing transient optical reflectivity, we have investigated the liquid phase epitaxial regrowth kinetics of ion‐implanted silicon during laser annealing. For annealing of ion‐implanted silicon with an 80‐ns (FWHM) pulse of various intensities at 1.06 μm, the threshold energy density required for melting is observed to be a constant. Above this threshold value, annealing occurs via an amorphous‐to‐liquid‐to‐crystalline transition. Redistribution of As profiles as measured by He+ backscattering spectra is observed only when the incident energy density exceeds the threshold. Below this value, a reduction of dechanneled fraction is observed, but no dopant redistribution occurs. From the observed melting onset, a maximum heating rate of about 2×1010 deg sec−1 is observed.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Growth and properties of graded band‐gap AlxGa1−xAs layers

P. Kordos, R. A. Powell, W. E. Spicer, G. L. Pearson, and M. B. Panish

Appl. Phys. Lett. 34, 366 (1979); http://dx.doi.org/10.1063/1.90807 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Graded band‐gap AlxGa1−xAs layers were grown using isothermal LPE techniques together with undersaturated solutions. The layer thicknesses were 1500–2500 Å and the value of x in the graded layers increased monotonically to ≈0.8 at the surface. The Al depth profiles, as measured by Auger analyses, are in good agreement with those derived by assuming rapid Al diffusion through the liquid boundary layer resulting from partial dissolution of the substrate surface. It was found that the graded‐layer thickness could be controlled by varying the degree of undersaturation of the solution at any given temperature.
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64.70.D- Solid-liquid transitions
81.30.Fb Solidification

The detection of 300 °K blackbody radiation with Rydberg atoms

T. F. Gallagher and W. E. Cooke

Appl. Phys. Lett. 34, 369 (1979); http://dx.doi.org/10.1063/1.90792 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Using selective field ionization (SFI) of Na Rydberg atoms we have detected the 300 °K blackbody radiation which induces the Na transitions 17s→17p, 18s→18p, 17d→18p, and 17d→18f frequencies of 27.3, 22.8, 7.4, and 41.6 cm−1, respectively. Investigation of the probable collisional effects show that they are negligible at 300 °K and allow us to project temperatures of <25 °K for Rydberg‐atom long‐wave detectors.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
32.90.+a Other topics in atomic properties and interactions of atoms with photons (restricted to new topics in section 32)

Infrared‐to‐optical image conversion by Bragg reflection from thermally induced index gratings

G. Martin and R. W. Hellwarth

Appl. Phys. Lett. 34, 371 (1979); http://dx.doi.org/10.1063/1.90793 (3 pages) | Cited 49 times

Online Publication Date: 7 August 2008

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We have observed efficient reproduction at visible wavelengths of 1.06‐μ images. We employed a phase‐matched four‐wave mixing process in which three waves at ν, ν, and ω mix to generate a fourth wave at ω, with no resonant conditions in either frequency. The image conversion was seen with each of the 14 liquids tried as a nonlinear medium and also with a glass. Thermal index changes were the dominant mechanism.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.Kw Holographic interferometry; other holographic techniques
42.30.Va Image forming and processing

Transient response of hybrid bistable optical devices

E. Garmire, J. H. Marburger, S. D. Allen, and H. G. Winful

Appl. Phys. Lett. 34, 374 (1979); http://dx.doi.org/10.1063/1.90794 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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The response of a hybrid bistable optical device to step inputs of light was studied experimentally. The results confirm theoretical predictions concerning the dependence of switching time on the applied light increment. For the first time the phenomenon of ’’critical slowing down’’ is observed directly.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical switching and bistability in tunable lasers

K. H. Levin and C. L. Tang

Appl. Phys. Lett. 34, 376 (1979); http://dx.doi.org/10.1063/1.90795 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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We report the observation of optical switching and bistability, and such related effects as hysteresis, optical memory, multistability, and differential gain, in an electro‐optically tuned cw dye laser. Similar effects should be observable in other tunable lasers.
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42.55.-f Lasers

The dependence of an acoustically nonresonant optoacoustic signal on pressure and buffer gases

Douglas R. Wake and Nabil M. Amer

Appl. Phys. Lett. 34, 379 (1979); http://dx.doi.org/10.1063/1.90796 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The dependence of an acoustically nonresonant signal on the buffer gas, pressure, and microphone response is presented. We extend the theoretical treatment of Kerr and Atwood to account for the strength of the observed signal. Considerations for detector optimization are discussed.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
07.07.-a General equipment
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers

Detection of small molecules by magnetically tuned frequency‐modulated atomic line sources

Hideaki Koizumi, Tetsuo Hadeishi, and Ralph D. McLaughlin

Appl. Phys. Lett. 34, 382 (1979); http://dx.doi.org/10.1063/1.90797 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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Small molecules such as NO, OH, I2, S2, SO2, NO2, and HCHO display discrete sharp electronic rotational‐vibrational lines. Utilizing the Zeeman effect, one component of an atomic emission line can be made to exactly coincide with a sharp molecular line while the other component is shifted so that there is no overlap with this line. When large molecules undergo electronic transitions it is not possible to resolve the rotational structure in the vast majority of cases. Therefore, the difference in absorption between the σ± components is proportional to the density of the molecules showing sharp absorption but is not influenced by other molecules. These phenomena can be used to achieve highly sensitive and selective detection of small molecules.
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32.30.Jc Visible and ultraviolet spectra
32.60.+i Zeeman and Stark effects
07.60.Dq Photometers, radiometers, and colorimeters

Compact sealed photopreionized TEA CO2 laser without heterogeneous catalysis or gas recycling

B. Norris and A. L. S. Smith

Appl. Phys. Lett. 34, 385 (1979); http://dx.doi.org/10.1063/1.90798 (2 pages) | Cited 30 times

Online Publication Date: 7 August 2008

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A compact photopreionized CO2 TEA laser is reported which operates on a single sealed gas mixture for ≳106 pulses without the necessity for heterogeneous catalysis, gas recirculation, or careful control of the gas mixture. Discharge arcing is prevented by (i) suppression of the CO2 dissociation and O2 formation with the addition of CO to the basic CO2‐N2‐He mixture and (ii) limitation of the attachment of the preionization electrons by the use of a short (∼60 ns) delay between the preionizing and main discharges with integral delay electronics.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Emission cross section and flashlamp‐excited NdP5O14 laser at 1.32 μm

M. M. Choy, W. K. Zwicker, and S. R. Chinn

Appl. Phys. Lett. 34, 387 (1979); http://dx.doi.org/10.1063/1.90799 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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The 4F3/2→4I13/2 emission cross section of NdP5O14 at 1.32 μm has been determined from both spontaneous and stimulated emission measurements. The relative performance of a flashlamp‐excited NdP5O14 laser at 1.32 and at 1.05 μm has also been evaluated. At 1.32 μm a multimode output energy of 2.7 mJ has been achieved with 1.6 J input.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.10.Dn Growth from solutions

Nonlinear theory of degenerate four‐wave mixing

John H. Marburger and Juan F. Lam

Appl. Phys. Lett. 34, 389 (1979); http://dx.doi.org/10.1063/1.90800 (3 pages) | Cited 31 times

Online Publication Date: 7 August 2008

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We report an exactly solvable theory of ’’time‐reversed’’ phase‐front generation including depletion effects and nonlinear phase distortion. Simple expressions are obtained for peak reflected signals with and without input probe signals.
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63.10.+a General theory

An electro‐optic tunable filter

D. A. Pinnow, R. L. Abrams, J. F. Lotspeich, D. M. Henderson, T. K. Plant, R. R. Stephens, and C. M. Walker

Appl. Phys. Lett. 34, 391 (1979); http://dx.doi.org/10.1063/1.90801 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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This letter describes a tunable optical filter that couples light energy between ordinary and extraordinary polarizations in a birefringent electro‐optic crystal at the phase‐matched wavelength by means of a spatially periodic dc electric field. The specific embodiment described here is a LiTaO3 platelet operating with transverse electric field and located between cross polarizers. Analogies to both the Solc birefringent filter and the Harris acousto‐optic filter are cited. The electro‐optic filter is tuned by varying the spatial period of the electric field via an array of separately addressable finger electrodes. We have demonstrated tunability from 4700 Å to 4.5 μm. Experimental results of transmittance versus applied voltage and of bandwidth versus pass wavelength agree well with theory. The flexibility of this type of electronic filter in allowing synthesis of arbitrary transfer functions through nonperiodic voltage distributions is emphasized.
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42.79.Ci Filters, zone plates, and polarizers
78.20.Jq Electro-optical effects
78.20.Fm Birefringence

GaxIn1−xAsyP1−y/InP rib‐waveguide injection lasers made by one‐step LPE

A. Doi, N. Chinone, K. Aiki, and R. Ito

Appl. Phys. Lett. 34, 393 (1979); http://dx.doi.org/10.1063/1.90808 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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A new fabrication method and characteristics of a rib‐guide GaInAsP/InP DH laser are described. The active layer of the rib‐guide structure is grown directly on a grooved InP substrate by one‐step liquid phase epitaxy in which phosphorus vapor is introduced in order to prevent the decomposition of the substrate. Stable transverse‐mode operation is obtained reproducibly up to 1.5 times threshold current. A preliminary life test indicates that the rib‐guide lasers fabricated without a buffer layer should be as reliable as conventional lasers with a buffer layer.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Photoinduced optical anisotropy and color adaptation in silver‐containing glasses

Nicholas F. Borrelli and Thomas P. Seward III

Appl. Phys. Lett. 34, 395 (1979); http://dx.doi.org/10.1063/1.90809 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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This paper reports photoinduced optical anisotropy (dichromism and birefringence) and color adaptation in oxide glasses containing silver and halogens. The effects are found in both photochromic and fixed‐tint glasses. In certain of the photochromic glasses there is memory, such that after thermal fading redarkening by uv radiation reestablishes the anisotropic or color‐adapted state. Dichroic ratios of 4 and birefringences of Δn=10−4 have been measured. The effects, similar to the Herschel and Weigert effects in silver halide photography, are explained on the basis of optical bleaching of anisotropically shaped submicroscopic aggregates of silver in contact with a silver halide.
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78.20.-e Optical properties of bulk materials and thin films
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.Fm Birefringence
42.70.Ce Glasses, quartz

New ion laser transitions in copper, silver, and gold

Kanti Jain

Appl. Phys. Lett. 34, 398 (1979); http://dx.doi.org/10.1063/1.90810 (2 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Using hollow‐cathode excitation techniques, laser oscillation is obtained at eight new transitions in copper‐helium, silver‐helium, and gold‐helium discharges. All the transitions are in the near‐infrared region and a majority of them are excited on a cw basis. Four of the transitions are obtained in Cu II, two in Ag II, and two in Au II. Lower threshold currents are also reported for five previously observed transitions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.70.+e Charge transfer

Flicker noise in highly doped semiconductors

A. van der Ziel

Appl. Phys. Lett. 34, 400 (1979); http://dx.doi.org/10.1063/1.90811 (2 pages)

Online Publication Date: 7 August 2008

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It is proposed to explain the observation of Hooge and Vandamme of flicker noise in highly doped semiconductors in terms of a number‐fluctuation model governed by a surface effect. While this model cannot be proven at present, it has the advantage that it is compatible with the absence of flicker noise in JFET’s, whereas the mobility fluctuation model is not.
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72.70.+m Noise processes and phenomena
72.20.-i Conductivity phenomena in semiconductors and insulators
72.80.-r Conductivity of specific materials

Dual‐wavelength demultiplexing InGaAsP photodiode

J. C. Campbell, T. P. Lee, A. G. Dentai, and C. A. Burrus

Appl. Phys. Lett. 34, 401 (1979); http://dx.doi.org/10.1063/1.90812 (2 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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We report the successful operation of a new photodiode structure capable of detecting and demultiplexing two wavelength bands simultaneously. Wavelength discrimination is achieved with a multilayer structure that incorporates p‐n junctions in two InxGa1−xAsyP1−y layers having different band gaps. In initial devices ’’crosstalk’’ between the photoresponses is less than −10 dB at each response peak.
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07.60.-j Optical instruments and equipment
72.80.-r Conductivity of specific materials
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects

Gettering effect by oxygen implantation in SOS

Y. Yamamoto, I. H. Wilson, and T. Itoh

Appl. Phys. Lett. 34, 403 (1979); http://dx.doi.org/10.1063/1.90813 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Rutherford backscattering and Hall measurements for oxygen‐ and/or boron‐implanted SOS samples have revealed that the oxygen implantation into the sapphire substrate through the silicon layer improves the crystalline quality in the surface region after annealing and is effective in suppressing the anomalous increase of the carrier concentration due to the aluminum diffusion from the substrate during annealing.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.80.Jh Ion radiation effects
68.60.-p Physical properties of thin films, nonelectronic
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electrical switching and memory phenomena in Cu‐TCNQ thin films

R. S. Potember, T. O. Poehler, and D. O. Cowan

Appl. Phys. Lett. 34, 405 (1979); http://dx.doi.org/10.1063/1.90814 (3 pages) | Cited 216 times

Online Publication Date: 7 August 2008

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Stable and reproducible current‐controlled bistable electrical switching has been observed in polycrystalline organic semiconducting films. The effect has been observed in a lamellar structure with a film of microcrystalline Cu‐TCNQ between Cu and Al electrodes where the Cu‐TCNQ is grown on a Cu substrate via a spontaneous electrolysis technique. The switching effect is insensitive to moisture and is observed over a large temperature range. The current‐voltage characteristics reveal an abrupt decrease in impedance from 2 MΩ to less than 200 Ω at a field strength of 4×103 V/cm. The transition from a high‐ to low‐impedance state occurs with delay and switching times of approximately 15 and 10 nsec, respectively. Switching with high‐power dissipation yields a low‐impedance memory state which can be erased by application of a short current pulse. An interpretation of this behavior is based on the bulk properties of the mixed valence semiconductor Cu‐TCNQ.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
85.30.-z Semiconductor devices

Multidielectrics for GaAs MIS devices using composition‐graded AlxGa1−xAs and oxidized AlAs

W. T. Tsang, M. Olmstead, and R. P. H. Chang

Appl. Phys. Lett. 34, 408 (1979); http://dx.doi.org/10.1063/1.90815 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Metal‐insulator‐semiconductor (MIS) structures were prepared by dry thermal oxidation of an AlAs layer that had been grown on a composition‐graded AlxGa1−xAs layer on GaAs. The epitaxial layers were grown by molecular beam epitaxy. Capacitance‐voltage (C‐V) measurements of these MIS structures demonstrated the achievement of inversion behavior with essentially no hysteresis and flatband voltages ranging from 0 to 0.1 V, which correspond to a fixed interface charge density of less than 2×1010 cm−2. It was also found that the stress developed between the oxide film and the epilayer was reduced in these MIS structures.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.61.Ng Insulators

Scanning‐electron‐beam annealing of arsenic‐implanted silicon

J. L. Regolini, J. F. Gibbons, T. W. Sigmon, R. F. W. Pease, T. J. Magee, and J. Peng

Appl. Phys. Lett. 34, 410 (1979); http://dx.doi.org/10.1063/1.90816 (3 pages) | Cited 33 times

Online Publication Date: 7 August 2008

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〈100〉 Si implanted with As (100 keV, 1015/cm2) was annealed with a scanning electron beam. The principal results obtained were (1) the electrical activity of the e‐beam‐annealed samples is the same as for control samples subjected to either cw laser annealing or thermal annealing at 575 and 1000 °C, respectively, for 30 min each; (2) recrystallization of the implanted layer as determined by MeV ion channeling and TEM measurements is complete; (3) the electron distribution obtained by stripping and van der Pauw measurements indicates that no diffusion of the implanted atoms has occurred. The annealing is therefore essentially identical to that obtained with a scanning cw laser.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
41.75.Fr Electron and positron beams
72.20.-i Conductivity phenomena in semiconductors and insulators
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