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15 Apr 1979

Volume 34, Issue 8, pp. 481-534


Tunable optical detection and generation of terahertz phonons in CaF2 and SrF2

W. Eisfeld and K. F. Renk

Appl. Phys. Lett. 34, 481 (1979); http://dx.doi.org/10.1063/1.90855 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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A new method for tunable detection and generation of terahertz phonons is reported. It is based on our observation that the lowest energy level of excited Eu2+ ions in CaF2 and SrF2 crystals can be split by uniaxial stress into two levels with a variable separation up to 2.4 THz. Phonons are generated by one‐phonon relaxation between these levels and detected by phonon‐induced fluorescence radiation from the upper level. The detector is applied to study the spectral distribution of phonons generated by the heat‐pulse technique.
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63.20.kp Phonon-defect interactions

Plasma anodization of oxygen‐sputtered GaAs surfaces

Yukinobu Shinoda and Masao Yamaguchi

Appl. Phys. Lett. 34, 484 (1979); http://dx.doi.org/10.1063/1.90856 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A simple method of preparing plasma‐grown anodic oxide on GaAs with improved physical and electrical properties is described. A GaAs surface was sputtered by positive oxygen ions prior to the plasma anodization, resulting in a Ga‐rich oxide layer on the surface. The oxide formed through this Ga‐rich layer had a low pin hole density and exhibited high breakdown voltages (3×106 V/cm) and less hysteresis in MOS‐device C‐V characteristics.
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81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.-z Semiconductor devices

Laser annealing of indium‐implanted Pb0.8Sn0.2Te films

G. Bahir, T. Bernstein, and R. Kalish

Appl. Phys. Lett. 34, 486 (1979); http://dx.doi.org/10.1063/1.90857 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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The annealing of indium‐implanted thin epitaxial films of Pb0.8Sn0.2Te (LTT) by means of pulses from a Q‐switched CO2 laser is reported. The results of the annealing are studied by channeling and interference‐contrast microscopy. The annealing seems to proceed through the melting‐liquid phase recrystallization mechanism which leads to crystals of quality similar to those obtained by conventional furnace annealing. Interference phenomena, related to the fact that the wavelength of the laser radiation is comparable to the film thickness, are observed.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation

Observation of changes in the electronic density of states at a Si (111) surface during adsorption of oxygen by Auger electron spectroscopy

P. Morgen, J. H. Onsgaard, and S. Tougaard

Appl. Phys. Lett. 34, 488 (1979); http://dx.doi.org/10.1063/1.90858 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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The adsorption of oxygen on a Si (111) surface is accompanied by significant changes in the local electronic densities of states. These effects have been monitored as changes in the spectral distribution of emitted L2,3 VV Auger electrons from pure and oxygen‐covered surfaces. Oxygen coverages varying from 0 to slightly below monolayer coverage (237L) have been employed. The present results are compared with data from recent sputter‐profiling studies of the Si‐SiO2 interface, showing similar behaviors in the two types of experiments.
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73.20.-r Electron states at surfaces and interfaces
73.40.-c Electronic transport in interface structures
32.80.Fb Photoionization of atoms and ions

Long‐term Hall‐type conversion by vacancy diffusion in Hg1−xCdxTe at room temperature

G. Nimtz, B. Schlicht, and R. Dornhaus

Appl. Phys. Lett. 34, 490 (1979); http://dx.doi.org/10.1063/1.90859 (2 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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See Also: Erratum

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Drastic long‐term changes of transport properties and the recombination behavior of a Hg1−xCdxTe crystal are reported. Being pure n‐type material immediately after fabrication the crystal showed a p‐type conduction after a five‐year storage under room‐temperature conditions. The lifetime—formerly dominated by Auger recombination—dropped by about two orders of magnitude. A model of Hg vacancy diffusion is suggested to explain the observed data.
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61.72.jd Vacancies
61.72.jj Interstitials
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP

R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier, and T. P. Pearsall

Appl. Phys. Lett. 34, 492 (1979); http://dx.doi.org/10.1063/1.90860 (3 pages) | Cited 55 times

Online Publication Date: 7 August 2008

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The band‐edge effective mass for conduction electrons in GaxIn1−xAsyP1−y has been determined for several different alloy compositions covering the complete range of alloys grown lattice‐matched on InP. Measurements show that the effective mass varies nearly linearly with alloy composition.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Ge : Ga photoconductors in low infrared backgrounds

E. E. Haller, M. R. Hueschen, and P. L. Richards

Appl. Phys. Lett. 34, 495 (1979); http://dx.doi.org/10.1063/1.90861 (3 pages) | Cited 43 times

Online Publication Date: 7 August 2008

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We report the development of infrared photoconductive detectors which are background fluctuation noise limited at photon fluxes ≲108 s−1. The detectors were fabricated from germanium doped with 2×1014 cm−3 gallium. Detectors operated in the conventional manner at T=3 K showed significant photoconductive response for wavelengths out to 120 μm with a minimum NEP of 2.4×10−17 W Hz−1/2 at 94 μm. Detectors operated at T=2 K with a uniaxial stress of 60 kgf mm−2 applied along a [100] direction showed significant response to 205 μm and gave a minimum NEP of 5.7×1017 W Hz−1/2 at ≈150 μm. The stressed detectors are four orders of magnitude more sensitive than any previous photoconductor beyond 120 μm.
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72.40.+w Photoconduction and photovoltaic effects
07.87.+v Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Excited‐state kinetics for Nd(thd)3 and Tb(thd)3 chelate vapors and prospects as fusion laser media

Ralph R. Jacobs and William F. Krupke

Appl. Phys. Lett. 34, 497 (1979); http://dx.doi.org/10.1063/1.90841 (4 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Fluorescence decays for the Nd3+ : 4F3/2→4I11/2 transition at 1.06 μm and the Tb3+ : 5D4→7F5 transition at 545 nm were studied, using the vapor‐phase carrier chelate 2,2,6,6‐tetramethyl‐3, 5‐heptanedione and pulsed‐laser excitation, as functions of (1) ground‐ and excited‐state molecular densities and (2) local temperature. In each case, inferred excited‐state densities 1016–1017 cm−3 were sustained for times greater than several hundred nanoseconds.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
82.20.Rp State to state energy transfer

Response of a Bi12SiO20 Pockels readout optical modulator to x rays

G. J. Berzins and M. Graser

Appl. Phys. Lett. 34, 500 (1979); http://dx.doi.org/10.1063/1.90842 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Response of a Pockels readout optical modulator to x rays has been measured. Sensitivity data and results of cursory imaging experiments suggest novel applications such as on‐line radiography.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser

N. Holonyak, R. M. Kolbas, W. D. Laidig, M. Altarelli, R. D. Dupuis, and P. D. Dapkus

Appl. Phys. Lett. 34, 502 (1979); http://dx.doi.org/10.1063/1.90843 (4 pages) | Cited 50 times

Online Publication Date: 7 August 2008

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Laser operation (4.2–300 °K) of multiple‐quantum‐well AlxGa1−xAs‐GaAs heterostructures on a phonon (LO) sideband ∼36 meV below the lowest confined‐particle transitions is described. Phonon‐sideband laser data are presented on two different metalorganic chemical‐vapor‐deposited (MO‐CVD) quantum‐well heterostructures with four GaAs active regions (Lz∼50 and ∼90 Å) coupled by three AlxGa1−xAs (x∼0.35) barriers.
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42.55.Px Semiconductor lasers; laser diodes
78.55.-m Photoluminescence, properties and materials
71.38.-k Polarons and electron-phonon interactions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

X‐ray preionization for electric discharge lasers

Shao‐Chi Lin and Jeffrey I. Levatter

Appl. Phys. Lett. 34, 505 (1979); http://dx.doi.org/10.1063/1.90844 (4 pages) | Cited 61 times

Online Publication Date: 7 August 2008

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Using x rays of 60–200‐keV photon energy (λ∼0.06–0.2 Å) as an ionizing radiation source in a transmission‐line‐driven low‐inductance discharge chamber, we have succeeded in generating spatially homogeneous pulsed avalanche discharges of several liter volume at greater than 1 atm pressure for up to 100‐nsec duration. In concurrent laser generation experiments with relatively lossy windows, we have observed high‐optical‐quality pulsed uv laser output of up to 2 J/liter from such discharges in rare‐gas/halogen mixtures, and ir laser output of up to 12.5 J/liter from a He/N2/CO2 mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Rj X-ray spectra
52.80.-s Electric discharges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Fluorescence decay measurement via modulated gain spectroscopy

W. T. Barnes and F. E. Lytle

Appl. Phys. Lett. 34, 509 (1979); http://dx.doi.org/10.1063/1.90845 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The ability to obtain a stable tunable picosecond pulse train from a synchronously pumped dye laser is shown to permit the use of modulated gain spectroscopy to study the lifetime, spectral, and concentration‐dependent behavior of fluorescent species. The fluorescence of rhodamine‐B in ethylene glycol at concentrations from 3μM to 5mM was observed over the range from 570 to 640 nm; a fluorescence lifetime of 2.2 ns was obtained.
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78.55.Kz Solid organic materials
31.50.Df Potential energy surfaces for excited electronic states
33.50.Dq Fluorescence and phosphorescence spectra
42.60.By Design of specific laser systems

Optical modulation by optical tuning of a cavity

H. M. Gibbs, T. N. C. Venkatesan, S. L. McCall, A. Passner, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 34, 511 (1979); http://dx.doi.org/10.1063/1.90846 (4 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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A signal beam transmitted by a Fabry‐Perot cavity is modulated by a control beam which changes the refractive index of the intracavity medium. High finesse at the signal wavelength and strong absorption at the control wavelengths result in efficient optical gating and modulation. Such modulation has been observed using GaAs (and using color filters) with switch‐on times of 1 ns (10 μs) and switch‐off times of 2–20 ns (1 ms), and a physical length of only 5 μm (60 μm).
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42.79.Hp Optical processors, correlators, and modulators
42.65.-k Nonlinear optics
78.20.-e Optical properties of bulk materials and thin films

Preparation of Sn‐doped In2O3 (ITO) films at low deposition temperatures by ion‐beam sputtering

John C. C. Fan

Appl. Phys. Lett. 34, 515 (1979); http://dx.doi.org/10.1063/1.90847 (3 pages) | Cited 26 times

Online Publication Date: 7 August 2008

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High‐quality films of Sn‐doped In2O3 (ITO) have been prepared by ion‐beam sputtering at deposition temperatures below 100 °C. As in the case of rf‐sputtered films, the electrical and optical properties of these films depend strongly on the O2 partial pressure during deposition. As‐deposited films with low electrical resistivity (∼5.5×10−4 Ω cm), high visible transmission (≳80%), and high infrared reflectivity at 10 μm (∼84%) have been obtained at O2 pressures of (2–3) ×10−5 Torr by deposition on both glass and Mylar substrates.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.61.-r Electrical properties of specific thin films
42.79.-e Optical elements, devices, and systems

Ellipsometric study of silicon implanted with boron ions in low doses

K. Watanabe, M. Miyao, I. Takemoto, and N. Hashimoto

Appl. Phys. Lett. 34, 518 (1979); http://dx.doi.org/10.1063/1.90848 (2 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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Ellipsometry was applied to estimate crystal damage in silicon caused by boron‐ion implantation in low doses. A highly sensitive parameter for crystal damage is proposed which is derived from the extinction coefficient of the complex refractive index. Crystal damage caused by ion implantation at doses as low as 3×1011 cm−2 and the annealing effect on crystal damage of heat treatment in dry N2 ambient after ion implantation were clearly detected by the parameter.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation

Deep‐level luminescence in AlxGa1−xAs double‐heterostructure lasers

J. P. van der Ziel and R. L. Hartman

Appl. Phys. Lett. 34, 520 (1979); http://dx.doi.org/10.1063/1.90849 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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It is shown that the deep level (∼1.0 eV) luminescence observed in double‐heterostructure lasers originates from the E3 radiation damage trap (Ga vacancy) or a closely related vacancy‐donor complex in the n‐type GaAs substrate region rather than in the active region as had been reported previously.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

The Schottky‐barrier height of Au on n‐Ga1−xAlxAs as a function of AlAs content

J. S. Best

Appl. Phys. Lett. 34, 522 (1979); http://dx.doi.org/10.1063/1.90850 (3 pages) | Cited 45 times

Online Publication Date: 7 August 2008

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The Schottky‐barrier height of Au on chemically etched n‐Ga1−xAlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x≈0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the ’’common‐anion’’ rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1−xAlxAs surface.
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73.30.+y Surface double layers, Schottky barriers, and work functions

Electroluminescence efficiency profiles of Mn in ZnS ac thin‐film electroluminescence devices

V. Marrello and A. Onton

Appl. Phys. Lett. 34, 525 (1979); http://dx.doi.org/10.1063/1.90851 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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We report a direct measurement of relative Mn electroluminescence (EL) efficiency in an ac EL device as a function of position normal to the ZnS film plane. The Mn EL efficiency decreases strongly with distance from the cathodic to anodic region of the ZnS layer. The cathodic‐to‐anodic efficiency ratio is about two orders of magnitude. In addition, the first ∼0.2 μm of ZnS deposited exhibits a significantly lower Mn EL efficiency relative to the remaining ZnS.
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78.60.Fi Electroluminescence
73.61.Ng Insulators

Vacuum‐evaporated conducting ZnS films

L. C. Olsen, R. C. Bohara, and D. L. Barton

Appl. Phys. Lett. 34, 528 (1979); http://dx.doi.org/10.1063/1.90852 (2 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Conductive crystalline films of ZnS have been deposited by coevaporating ZnS and Al, or In. As‐deposited conductive films have been obtained on occasion. Conductive films are consistently obtained with heat treatment subsequent to deposition. Typically, film resistivities are in the range 1–10 Ω cm. Hall mobilities on the order of 775 cm2 V−1 sec−1 have been measured. The results reported here suggest that with improved control of deposition parameters, conductive crystalline ZnS films can be obtained (as deposited) with two‐source thermal evaporation.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon

H. Strunk, U. Gösele, and B. O. Kolbesen

Appl. Phys. Lett. 34, 530 (1979); http://dx.doi.org/10.1063/1.90853 (3 pages) | Cited 49 times

Online Publication Date: 7 August 2008

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Bipolar transistors with consecutively diffused boron base and phosphorus emitter showing the ’’emitter‐push effect’’ have been investigated by transmission electron microscopy. The analysis of isolated dislocation helices in the emitter and base regions indicates the presence of a self‐interstitial supersaturation in front of the phosphorus‐diffused zone. This result refutes the widely accepted explanation of the ’’emitter‐push effect’’ in terms of a phosphorus‐induced vacancy supersaturation.
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72.80.Jc Other crystalline inorganic semiconductors

Elinvar‐type behavior in the alloy Fe78Mo2B20

S. Tyagi and A. E. Lord

Appl. Phys. Lett. 34, 533 (1979); http://dx.doi.org/10.1063/1.90854 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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The ferromagnetic metallic glass alloy Fe78Mo2B20 exhibits Invar‐type behavior in the amorphous state below approximately 250 °C. This behavior disappears upon crystallization. By thermal treatment of the amorphous alloy, excellent Elinvar‐type characteristics have been obtained in partly crystallized Fe78Mo2B20 in the temperature range 20–300 °C.
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75.50.Bb Fe and its alloys
81.05.Kf Glasses (including metallic glasses)
81.40.Gh Other heat and thermomechanical treatments
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