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1 May 1979

Volume 34, Issue 9, pp. 537-613

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The effects of oxygen doping and subsequent annealing in nitrogen on the structure of polycrystalline silicon

Joseph T. McGinn and Alvin M. Goodman

Appl. Phys. Lett. 34, 601 (1979); http://dx.doi.org/10.1063/1.90889 (4 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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We have used reflection high‐energy electron diffraction (RHEED) to study (i) the structure (surface crystallinity) of semi‐insulating polycrystalline silicon (SIPOS) layers having a wide range of oxygen doping and (ii) the effect of subsequent annealing on that structure. Our results are consistent with a model in which (i) excess O exists in the form of silicon oxide at the intergrain boundaries, (ii) the presence of this intergrain oxide tends to prevent grain growth during annealing, and (iii) sufficiently large O doping completely suppresses observable grain growth during annealing.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Controlled hydrogenation of amorphous silicon at low temperatures

H. J. Stein and P. S. Peercy

Appl. Phys. Lett. 34, 604 (1979); http://dx.doi.org/10.1063/1.90890 (3 pages) | Cited 21 times

Online Publication Date: 7 August 2008

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Silicon‐ion bombardment of crystalline Si and hydrogen‐ion implantation are used to produce high‐purity amorphous Si with controlled hydrogenation at low temperatures. Hydrogen implanted into amorphous Si chemically bonds predominantly in monohydride (SiH) centers over a wide range of hydrogen concentration. Predominance of monohydride over polyhydride (SiH2) formation in bombardment‐produced amorphous Si is independent of the order of hydrogenation and amorphization, and the results suggest that a high disorder level favors monohydride formation. This suggestion is supported by ion‐bombardment‐induced conversion of SiH2 to SiH1 centers in sputter‐deposited films.
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81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
63.20.Pw Localized modes
61.72.J- Point defects and defect clusters

Electrical properties of indium‐doped lead tin telluride

K. Weiser, A. Klein, and M. Ainhorn

Appl. Phys. Lett. 34, 607 (1979); http://dx.doi.org/10.1063/1.90891 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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Starting at room temperature the Hall constant of In‐doped lead tin telluride increases exponentially with inverse temperature, then decreases, and finally flattens out. This behavior is explained on the basis of autocompensation and the positive temperature dependence of the band gap.
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81.90.+c Other topics in materials science (restricted to new topics in section 81)
72.20.My Galvanomagnetic and other magnetotransport effects

Minimum Al0.5Ga0.5As‐GaAs heterojunction width determined by sputter‐Auger techniques

C. M. Garne, F C. Y. Su, W. E. Spicer, P. D. Edwood, D. Miller, and J. S. Harris

Appl. Phys. Lett. 34, 610 (1979); http://dx.doi.org/10.1063/1.90862 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Two intimately connected parameters are investigated: the abruptness of MBE heterojunctions and the minimum depth resolution of the sputter‐Auger technique. Using 250‐eV Ar+ ions and monitoring the Al LVV Auger transition, the sharpest interface measured to date (13–15 Å) is obtained. After correcting for the electron escape depth, a minimum interface width of 9 Å is obtained. Large increases in interface broadening with increasing Ar+ ion energies are observed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

The effect of doping on microdefect formation in as‐grown dislocation‐free Czochralski silicon crystals

A. J. R. de Kock, W. T. Stacy, and W. M. van de Wijgert

Appl. Phys. Lett. 34, 611 (1979); http://dx.doi.org/10.1063/1.90863 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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The influence of p‐ and n‐type doping on microdefect formation in macroscopically dislocation‐free as‐grown Czochralski silicon crystals has been studied using copper decoration, x‐ray transmission topography, preferential etching, and high‐voltage transmission electron microscopy. B‐doped crystals are found to contain undecorated perfect dislocation loops of an interstitial nature. In Sb‐doped crystals two other types of microdefects are present, one of which consists of a precipitate particle exhibiting a vacancy type of strain field. All defects are distributed in a striated pattern.
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81.10.Fq Growth from melts; zone melting and refining
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.U- Doping and impurity implantation
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