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15 Dec 1979

Volume 35, Issue 12, pp. 901-947


Multipass amplification and tuning of the blue‐green XeF C→A laser

Charles H. Fisher, Robert E. Center, George J. Mullaney, and John P. McDaniel

Appl. Phys. Lett. 35, 901 (1979); http://dx.doi.org/10.1063/1.91016 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The output energy from a uv preionized discharge excited XeF C→A laser has been increased two orders of magnitude by injecting a dye laser pulse into the C→A oscillator cavity. Output energies greater than 4 mJ with a spectral bandwidth of approximately 3 nm have been measured. By tuning the injected dye laser pulse, the output from the C→A laser was tuned from 460 to 515 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Kf Visible spectra
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Absorption studies at 193 nm in e‐beam excited xenon

C. Duzy and M. J. W. Boness

Appl. Phys. Lett. 35, 903 (1979); http://dx.doi.org/10.1063/1.91017 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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This study was undertaken in order to determine whether the observed premature 172‐nm laser pulse termination in pure xenon was caused by medium absorption. The absorption was measured by probing the e‐beam excited xenon with an ArF (193 nm) laser. Analysis of the results indicates that premature pulse termination cannot be explained entirely by the observed medium absorption.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Stabilization of aging‐induced self‐pulsations and the elimination of an initial temporally saturable mode of degradation in (Al,Ga)As lasers by means of facet coatings

F. R. Nash, R. L. Hartman, T. L. Paoli, and R. W. Dixon

Appl. Phys. Lett. 35, 905 (1979); http://dx.doi.org/10.1063/1.91018 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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We demonstrate that half‐wavelength facet coatings of Al2O3 can arrest the growth of pulsations in the output intensity of (Al,Ga)As double‐heterostructure lasers during cw aging in a 70 °C dry nitrogen ambient while also eliminating an initial mode of degradation. These concurrent effects of the coatings suggest a common origin for the aging‐induced pulsations and the initial degradation and also support a recently proposed model for the origins of pulsations.
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42.55.Px Semiconductor lasers; laser diodes

A TEM00 far infrared laser with integrated pump laser

P. Dyrna and M. Tacke

Appl. Phys. Lett. 35, 908 (1979); http://dx.doi.org/10.1063/1.91019 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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A new hybrid far infrared (FIR) laser is described. The output beam has the form of the fundamental Gaussian mode. The radiation is pulsed due to passive Q switching by the FIR laser gas CH3F. This type of resonator is expected to combine excellent FIR beam geometry, stability, and efficiency.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

The emission spectrum from planar‐channeled electrons

R. H. Pantell and R. L. Swent

Appl. Phys. Lett. 35, 910 (1979); http://dx.doi.org/10.1063/1.91020 (3 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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Planar‐channeled electrons radiate electromagnetic energy with sharp peaks in the emission spectrum. A model is developed to predict the locations of these peaks, which are shown to correlate well with experimental observations. A by‐product of the model is that it provides a sensitive method for determining the interplanar potential energy function in a crystal.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Operating characteristics of a closed cycle flow rare gas halide laser

J. L. Miller, J. Dickie, J. Davin, J. Swingle, and T. Kan

Appl. Phys. Lett. 35, 912 (1979); http://dx.doi.org/10.1063/1.91021 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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A UV preionized, high‐purity construction, closed‐cycle‐flow rare‐gas‐halide laser has been constructed to study laser characteristics at high pulse repetition frequency and closed cycle behavior of the laser chemistry. Operating characteristics of the laser with ArF, KrF, XeF, and XeCl have been obtained. The XeCl laser has demonstrated the best performance, yielding a maximum average power of 45 W at 600 Hz and greater than 35 W at 500 Hz for 1 h.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Polarization effects on single‐mode optical fiber sensors

S. K. Sheem and T. G. Giallorenzi

Appl. Phys. Lett. 35, 914 (1979); http://dx.doi.org/10.1063/1.91022 (4 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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In a conventional circular cross‐section single‐mode fiber, built‐in and induced birefringences remove the degeneracy and make the fiber a two‐Eigenmode system. We have constructed the first all‐fiber interferometric sensor system and have performed preliminary studies on the effects of birefringence in these interferometers. Theoretical analysis and experimental data supporting this analysis are presented for the 3‐dB coupler and all‐fiber interferometer sensor.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

Rates of dissociative attachment of electrons to excited H2 and D2

J. M. Wadehra

Appl. Phys. Lett. 35, 917 (1979); http://dx.doi.org/10.1063/1.91023 (3 pages) | Cited 48 times

Online Publication Date: 7 August 2008

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Calculations are reported of the contributions of the lowest 2Σ+u and 2Σ+g resonant states to the rates of dissociative attachment of electrons to H2 and D2. For all electron temperatures, the rate is significantly enhanced by vibrational and rotational excitation of the initial molecule. Typically, for an electron temperature of 1.5 eV, the attachment rates for various (v, J) levels are, in cm3 sec−1, 5.4×10−15 for (0,0), 7.2×10−11 for (0,20), and 7.8×10−9 for (8,0), for H2; and 4.5×10−17 for (0,0), 1.4×10−14 for (0,20), and 6.0×10−9 for (11,0), for D2.
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34.80.Gs Molecular excitation and ionization
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)
34.10.+x General theories and models of atomic and molecular collisions and interactions (including statistical theories, transition state, stochastic and trajectory models, etc.)

Electron dissociative attachment rate constants for F2 and NF3 at 300 and 500 °K

Daniel W. Trainor and J. H. Jacob

Appl. Phys. Lett. 35, 920 (1979); http://dx.doi.org/10.1063/1.91005 (3 pages) | Cited 23 times

Online Publication Date: 7 August 2008

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Electron attachment to F2 and NF3 has been studied in an electron‐beam‐controlled gas‐discharge apparatus over a range of E/P (2–10 kV/cm atm). These experiments were performed in gas mixtures containing small amounts of the halide molecules (≲1%) in an atmosphere of N2 which was included to control the average electron energy. We obtained values for the rate constants for dissociative attachment to F2 and NF3 as a function of mixture temperature at 300 and 500 °K and applied electric field. These results compare favorably with the rate constants deduced from the absolute cross section for these compounds reported by Chantry.
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34.80.Gs Molecular excitation and ionization
82.20.Pm Rate constants, reaction cross sections, and activation energies
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

Laser‐induced recystallization and defects in ion‐implanted hexagonal SiC

V. V. Makarov, T. Tuomi, K. Naukkarinen, M. Luomajärvi, and M. Riihonen

Appl. Phys. Lett. 35, 922 (1979); http://dx.doi.org/10.1063/1.91006 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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SiC(6H) crystals amorphized with 14N+‐ion implantation were annealed with CO2 laser pulses at intensities of 20–100 MW/cm2. Laser produced crystallization due to residual ray absorption was studied by means of optical spectroscopy, 4He+‐ion backscattering spectrometry and channeling as well as Cu Kα1 and synchrotron x‐ray diffraction topography. At low laser intensities topographs revealed linear and planar defects, which contributed to increased dechanneling independent of analyzing beam energy. Minimum of lattice disorder, which was in some regions of the laser impact area smaller than that obtained in thermal annealing, was attained at the peak laser intensities of about 50 MW/cm2.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
42.62.-b Laser applications

Luminescent p‐GaAs grown by zinc ion doped MBE

J. C. Bean and R. Dingle

Appl. Phys. Lett. 35, 925 (1979); http://dx.doi.org/10.1063/1.91007 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Low‐energy zinc ions have been incorporated in growing MBE GaAs layers producing heavily doped p‐type material. As‐grown layers retain a substantial amount of radiation damage as indicated by the absence of photoluminescence and low hole mobilities. A postgrowth anneal yields layers with low‐temperature luminescence and mobilities comparable to zinc doped LPE epitaxial layers. Annealed layer quality does not depend on substrate growth temperature or ion energy over the ranges 580–650 °C and 100–3000 eV, respectively. The measured zinc ion sticking coefficient has a value of ∼50% and depends only weakly on ion energy. The data suggest that the sticking coefficients are enhanced by a simple ion burial mechanism and not by an electrostatic attraction between the ion and surface atoms.
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61.72.U- Doping and impurity implantation
72.20.Fr Low-field transport and mobility; piezoresistance
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.40.Fy Semiconductors

Degradation of Ga1−xAlxAs visible diode lasers

T. Kajimura, T. Kuroda, S. Yamashita, H. Todokoro, M. Nakamura, K. Mizuishi, and J. Umeda

Appl. Phys. Lett. 35, 928 (1979); http://dx.doi.org/10.1063/1.91008 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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It is shown that Ga1−xAlxAs visible lasers degrade faster at shorter lasing wavelengths. The degradation in the wavelength region below 730 nm can mainly be attributed to the rapid formation of macroscopic defects in the active region. A notable improvement in life is obtained for these shorter wavelength lasers by Te‐doping of the active layer. On the other hand, degradation at above 740‐nm results from enhanced facet oxidation due to high AlAs mole fractions in the layers. Facet coatings using SiO2 films effectively suppress facet oxidation. As a result, room‐temperature extrapolated lives exceeding 10 000 h are achieved in the wavelength region above 740 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.72.U- Doping and impurity implantation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

The use of ZnO in transparent type MIS solar cells

P. Petrou, R. Singh, and D. E. Brodie

Appl. Phys. Lett. 35, 930 (1979); http://dx.doi.org/10.1063/1.91009 (2 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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The efficiency of transparent type MIS solar cells is often below the theoretical estimate due to the simultaneous requirement that the thin metal film have good transparency and high conductivity. In this letter we report the properties of ZnO on Ti as a combined transparent conducting (TC) layer which can be used to reduce the sheet resistance of the thin metal layer.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.61.At Metal and metallic alloys
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Determination of the interface states in GaAs MOS diodes by deep‐level transient spectroscopy

Kimiyoshi Yamasaki and Takuo Sugano

Appl. Phys. Lett. 35, 932 (1979); http://dx.doi.org/10.1063/1.91010 (3 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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The capture cross sections and density‐energy distribution of the trap states at the interface between GaAs epitaxial layers and oxide films grown by anodization in oxygen plasma have been determined by deep‐level transient spectroscopy (DLTS). The capture cross sections are of the order of 10−12–10−13 cm2. The state density in the energy space range from 1×1013 to 3×1013 cm−2 eV−1. It has a peak 0.43 eV below the conduction band edge, but increases again near the valence band edge. The existence of traps in the oxide is also suggested. The activation energies of the emission rates determined by constant‐capacitance DLTS with a small pulse voltage are in good agreement with the surface potentials, and no particular band structure at the interface, such as an interface band, has been found.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Improving the radiative yield of GaAs by laser annealing

J. A. Rostworowski, R. R. Parsons, and D. G. Hutcheon

Appl. Phys. Lett. 35, 934 (1979); http://dx.doi.org/10.1063/1.91011 (4 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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We have measured the photoluminescence properties of laser‐annealed single‐crystal GaAs. The quantum efficiency of the band‐edge emission at liquid helium temperatures was increased by 3 orders of magnitude after a single 10−3‐s pulse of ruby laser light. This increase in radiative efficiency is thought to be due to dissociation of Si‐donor‐Ga‐vacancy complexes, which is expected to decrease nonradiative processes and possibly increase radiative centers. A theoretical prediction of the temperature distribution at the end of the laser pulse was performed.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation

Photoluminescence from hydrogenated ion‐implanted crystalline silicon

J. I. Pankove and C. P. Wu

Appl. Phys. Lett. 35, 937 (1979); http://dx.doi.org/10.1063/1.91012 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Ion‐implanted crystalline silicon annealed in atomic hydrogen photoluminesces at 0.99±0.01 eV in a band having a spectral width of 0.1 eV FWHM. The emitted spectrum does not depend on the chemical nature of the implanted ion (Al, As, D, F, H, Ne, P, Si); however, when the surface is amorphized, a spectrum characteristic of hydrogenated amorphous Si is obtained.
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78.55.-m Photoluminescence, properties and materials
78.40.Fy Semiconductors
71.55.-i Impurity and defect levels
81.40.Tv Optical and dielectric properties related to treatment conditions

Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices

L. L. Chang, N. Kawai, G. A. Sai‐Halasz, R. Ludeke, and L. Esaki

Appl. Phys. Lett. 35, 939 (1979); http://dx.doi.org/10.1063/1.91013 (4 pages) | Cited 57 times

Online Publication Date: 7 August 2008

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The semiconductor‐semimetal transition in InAs‐GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov‐de Haas measurements confirm the carrier enhancement in the semimetallic state.
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64.70.-p Specific phase transitions
05.70.Fh Phase transitions: general studies
81.30.Dz Phase diagrams of other materials

A discrepancy in the elementary theory of MOSFET modeling

A. van der Ziel, H. S. Park, and S. T. Liu

Appl. Phys. Lett. 35, 942 (1979); http://dx.doi.org/10.1063/1.91014 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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The elementary theories of flicker noise in MOSFET’s operating at low drain bias evaluate the spectrum SVeq8f) of the equivalent gate noise emf δVeq under the assumptions of an effective mobility μeff that is independent of the gate voltage Vg and of a carrier number in the channel that varies linearly with the gate voltage. We show here that this introduces an error I2d/[g2m(Vg—VT)2] in the calculated results. Experiments show that this error can be significant, so that it makes some existing interpretations of SVeq(f) doubtful. The error comes about because at a given drain current Id the transconductance gm for large Vg−VT is smaller than the elementary theory predicts. This affects most MOSFET modeling at low drain bias.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

High‐current A‐15 microcomposite materials

R. Borman, H. C. Freyhardt, and H. Bergmann

Appl. Phys. Lett. 35, 944 (1979); http://dx.doi.org/10.1063/1.91015 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Powder metallurgy is used as an alternative process to produce Nb3Sn and V3Ga composite superconductors with large critical transport currents in magnetic fields above 15 T. Whereas for a Cu–30 wt.%Nb +Sn composite the overall current density Jc amounts to 1.0×108 A/m2 at 16 T, values in excess of 4×108 A/m2 (16 T) are observed for Cu–30 wt.% V+Ga composites.
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74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.25.-q Properties of superconductors
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
FREE

Erratum: X‐ray determination of strain and damage distributions in ion‐implanted layers

V. S. Speriosu, H. L. Glass, and T. Kobayashi

Appl. Phys. Lett. 35, 947 (1979); http://dx.doi.org/10.1063/1.90898 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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61.72.U- Doping and impurity implantation
61.05.C- X-ray diffraction and scattering
99.10.Cd Errata
FREE

Erratum: Effect of pressure and pulse length on the isotopically selective photodissociation of freon CF2Cl2 under CO2 laser pulses

M. Nève de Mévergnies

Appl. Phys. Lett. 35, 947 (1979); http://dx.doi.org/10.1063/1.91273 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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82.50.Hp Processes caused by visible and UV light
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
28.60.+s Isotope separation and enrichment
99.10.Cd Errata
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