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1 Jul 1979

Volume 35, Issue 1, pp. 1-95

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Thermochemical coloration and annealing of spinel and magnesium oxide

G. S. White, K. H. Lee, and J. H. Crawford

Appl. Phys. Lett. 35, 1 (1979); http://dx.doi.org/10.1063/1.90916 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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Heating spinel (MgAl2O4) single crystals in aluminum or magnesium metal vapor at temperatures in excess of 1800 °C results in the introduction of an optical absorption band at 5.3 eV. The same band can be produced by heating in a strongly reducing atmosphere with no metal vapor at 2100 °C. These results strongly support the suggestion of Bunch that the 5.3‐eV band, created by atomic displacement collisions resulting from energetic particle bombardment, is associated with an F‐type center. Isothermal annealing of the 5.3‐eV band in MgAl2O4 and the 5.0‐eV band in MgO introduced by thermochemical coloration suggests that the activation energy for oxide‐ion vacancy motion is, respectively, 1.8 and 3.4 eV.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
71.55.Ht Other nonmetals

Surface and bulk order parameters of a nematic liquid crystal

Hitoshi Mada and Shunsuke Kobayashi

Appl. Phys. Lett. 35, 4 (1979); http://dx.doi.org/10.1063/1.90926 (2 pages) | Cited 42 times

Online Publication Date: 7 August 2008

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The measurements of the anisotropy of the refractive index have been made for heptyl‐cyanobiphenyl (7CB) at the surface as well as in the bulk by the interferometric method. Using these data, order parameters S at the surface and S in the bulk were calculated. The results show that S is slightly larger than S in the nematic temperature region. S becomes zero in the isotropic region; nevertheless, the order parameter at the surface, S, still has a finite value even at temperatures above the clearing point.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Tungsten needles produced by decomposition of hexacarbonyltungsten

F. Okuyama, T. Shibata, and N. Yasuda

Appl. Phys. Lett. 35, 6 (1979); http://dx.doi.org/10.1063/1.90934 (2 pages) | Cited 17 times

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Tungsten needles grown from hexacarbonyltungsten vapors in a glow‐discharge condition are described. The needle growth occurs on a tungsten substrate in a temperature range from nearly room temperature to 1500 °K, but needles produced below and above ∼1100 °K are quite different in morphology and crystalline state. The products at lower temperatures are tungsten particles agglomerated in dendritelike shapes while those at higher temperatures possibly are whiskers.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Stress in thermal SiO2 during growth

E. P. EerNisse

Appl. Phys. Lett. 35, 8 (1979); http://dx.doi.org/10.1063/1.90905 (3 pages) | Cited 126 times

Online Publication Date: 7 August 2008

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Stress present in thermal SiO2 at temperatures during growth in wet O2 has been measured as a function of growth temperature. During growth at 950 °C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000 °C, the SiO2 grows in a stress‐free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975 °C, are of value in avoiding mechanical failure effects in integrated‐circuit processing.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
46.35.+z Viscoelasticity, plasticity, viscoplasticity
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

On the scaling law of plasma temperature versus laser flux

B. K. Sinha and N. Gopi

Appl. Phys. Lett. 35, 11 (1979); http://dx.doi.org/10.1063/1.90912 (3 pages) | Cited 11 times

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The experiments were conducted with a 50‐MW 60‐ns ruby laser to study the variation of plasma temperature with laser flux for a carbon and polyethylene plasma in a purely collisional regime. The plasma temperature showed a ϕ2/9 dependence on laser flux in the intensity regime 2×1010 to 5×1011 W/cm2. Results are discussed with reference to the scaling laws obtained by different workers in different flux regimes on the basis of collisional and noncollisional absorption.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.50.Gj Plasma heating by particle beams

Microsecond operation of a general purpose pulsed proton gun

S. Humphries and G. W. Kuswa

Appl. Phys. Lett. 35, 13 (1979); http://dx.doi.org/10.1063/1.90913 (4 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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A magnetically insulated pulsed proton gun is described that provides an extracted parallel beam of annular cross section for microsecond pulse lengths. In initial tests, time‐averaged currents of 5 kA and current densities of 50 A/cm2 were achieved with ≲200 kV voltage. The behavior of the gun appears to be determined by instabilities of the cathode electron cloud growing over time scales of the order of 0.5 msec to give ion current‐density enhancements greater than a factor of 50 above the Child‐Langmuir limit.
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29.27.Ac Beam injection and extraction
29.20.Ba Electrostatic accelerators
52.75.Di Ion and plasma propulsion

Semiconductor laser with integral light intensity detector

D. R. Scifres and W. Stutius

Appl. Phys. Lett. 35, 16 (1979); http://dx.doi.org/10.1063/1.90914 (3 pages)

Online Publication Date: 7 August 2008

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An integrated Si Schottky‐barrier detector for the output power stabilization of a GaAs/GaAlAs DH laser mounted on a Si heat sink is described. The signal emitted from the rear laser mirror and detected by the integral Schottky diode was used to stabilize the laser output power to within ∼1% over a 32 °C temperature range, thus eliminating the need for mounting fibers to or aligning bulky discrete detectors with the rear laser mirror.
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42.55.Px Semiconductor lasers; laser diodes
29.40.Wk Solid-state detectors
73.30.+y Surface double layers, Schottky barriers, and work functions

Proton radiation effects on Cr‐MIS single‐crystal Si solar cells

R. Ferraglio and W. A. Anderson

Appl. Phys. Lett. 35, 18 (1979); http://dx.doi.org/10.1063/1.90915 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Cr‐MIS solar cells on single‐crystal Si, with a 2‐cm2 area and approximately 10% efficiency, have been subjected to 1.0‐ and 1.6‐MeV proton radiation at total dosages of up to 3.3×1013 p/cm2. Photovoltaic studies reveal characteristic short‐circuit current and open‐circuit voltage degradation similar to proton‐irradiated junction‐type solar cells. (See H. Y. Tada and J. R. Carter, Solar Cell Radiation Handbook, JPL Publication 77‐56, 1977.) Spectral response measurements reveal output decay primarily due to minority‐carrier diffusion‐length decreases of up to 96%.
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61.80.Jh Ion radiation effects
84.60.Jt Photoelectric conversion

Resistivity changes in laser‐annealed polycrystalline silicon during thermal annealing

Tadashi Shibata, Hisakazu Iizuka, Susumu Kohyama, and J. F. Gibbons

Appl. Phys. Lett. 35, 21 (1979); http://dx.doi.org/10.1063/1.90917 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Polycrystalline silicon layers heavily doped with phosphorus or arsenic were irradiated with a Nd : YAG pulsed laser beam. A 40–50% reduction in sheet resistivity was obtained by laser annealing. However, during subsequent heat treatments the resistivity increased to a value which was higher than the initial value before the laser anneal. The instability of the resistivity is tentatively explained by reprecipitation of dopants both within the grains and at the grain boundaries.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu‐In films to an H2S atmosphere

Steven P. Grindle, Charles W. Smith, and Steven D. Mittleman

Appl. Phys. Lett. 35, 24 (1979); http://dx.doi.org/10.1063/1.90918 (3 pages) | Cited 26 times

Online Publication Date: 7 August 2008

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CuInS2 thin films have been made from copper, indium, and hydrogen sulfide gas using a two‐step technique which involves exposing Cu‐In films produced by sputtering pure copper and pure indium to H2S gas diluted with argon. X‐ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the CuInS2. The resulting films were all p type with resistivity in the range 0.1–500 Ω cm and showed a preferred orientation of the (112) plane parallel to the substrate.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Cd Deposition by sputtering

A 490‐nm XeF electric discharge laser

C. H. Fisher, R. E. Center, G. J. Mullaney, and J. P. McDaniel

Appl. Phys. Lett. 35, 26 (1979); http://dx.doi.org/10.1063/1.90919 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Lasing at 490 nm in the broadband XeF (C 3/2→A 3/2) transition has been achieved in He/Xe/NF3 gas mixtures excited by a uv preionized electric discharge. Measurements of the C→A laser spectrum show a bandwidth of approximately 40 nm centered around 490 nm, indicating that the laser should be tunable over a wide spectral region in the visible.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Kf Visible spectra
52.80.Hc Glow; corona
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

Subharmonic energy gap structure in the Josephson radiation at 35 GHz from a superconducting thin‐film microbridge

J. Bindslev Hansen, M. T. Levinsen, P. E. Lindelof, B. Dueholm, J. Mygind, N. F. Pedersen, and O. H. Soerensen

Appl. Phys. Lett. 35, 28 (1979); http://dx.doi.org/10.1063/1.90910 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Nonresonant detection of the Josephson radiation 35 GHz from a superconducting thin‐film microbridge is reported. The high frequency and the accuracy of these measurements lead to a new important observation: subharmonic energy gap structure in the detected integral power. The maximum integral power measured was as large as 8×10−11 W.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
73.40.Jn Metal-to-metal contacts
74.78.-w Superconducting films and low-dimensional structures

Observation of fluorescence line narrowing, hole burning, and ion‐ion energy transfer in neodymium laser glass

S. A. Brawer and M. J. Weber

Appl. Phys. Lett. 35, 31 (1979); http://dx.doi.org/10.1063/1.90911 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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The existence of hole burning and the degree of homogeneity in the 4F3/2→4I11/2 laser transition of Nd3+ in a silicate glass at 295 K are established by exciting the small thermal population in the 4I11/2 state with a pulsed Nd : YAG laser and observing resonant fluorescence line narrowing. Measurements of time‐resolved line‐narrowed 4F3/2→4I9/2 spectra show that hole filling is slow; cross relaxation rates between ions in spectrally different sites are <104 s−1 for concentrations of ⩽3 wt.% Nd2O3.
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42.62.-b Laser applications
42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

High‐intensity subnanosecond transients from synchronously pumped submillimeter‐wave lasers

W. Lemley and A. V. Nurmikko

Appl. Phys. Lett. 35, 33 (1979); http://dx.doi.org/10.1063/1.90920 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Synchronous pumping from a mode‐locked TEA CO2 laser has been used to generate high‐intensity far‐infrared pulses in CH3F and D2O at peak powers exceeding 100 kW. By employing an optical correlation measurement technique, pulse widths as short as 355 psec have been observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

A new electron‐beam pumped XeF laser at 486 nm

W. E. Ernst and F. K. Tittel

Appl. Phys. Lett. 35, 36 (1979); http://dx.doi.org/10.1063/1.90909 (2 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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Laser emission has been observed from XeF on the C (3/2) →A (3/2) transition at 486 nm with a spectral bandwidth of 12 nm. A peak laser power of 5 kW was obtained from Ar/Xe/NF3 mixtures in the ratio of 600 : 2 : 1 at total pressures of 350–800 kPa excited by 1‐MeV 20‐kA electron‐beam pulses of 8‐ns duration. Lasing can also occur on the usual B (1/2) →X (1/2) transition at 353 nm with an appropriate set of cavity reflectors under the same operating conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Coupling‐length adjustment for an optical directional coupler as a 2×2 switch

Osamu Mikami and Sakae Zembutsu

Appl. Phys. Lett. 35, 38 (1979); http://dx.doi.org/10.1063/1.90921 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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A novel method for realizing the desired light coupling of an optical directional coupler for 2×2 switching is presented. This method consists of loading a high‐index film on one of the waveguides and reducing the light coupling to zero in the undesired coupling region. The operation principle was experimentally examined using Ti‐diffused LiNbO3 waveguides and Se‐S–based chalcogenide glass film. The effective coupling length for the TE mode could be changed from 0 to 3L0 (L0 : 0‐dB coupling length) by trimming the high‐index strip.
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42.79.Gn Optical waveguides and couplers

Efficient LiNbO3 balanced bridge modulator/switch with an ion‐etched slot

Makoto Minakata

Appl. Phys. Lett. 35, 40 (1979); http://dx.doi.org/10.1063/1.90922 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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A simple modified balanced bridge modulator or switch is reported. The modulator is comprised of only straight waveguides and an ion‐etched slot used for a conventional phase shifter. The slot excavated at the center of two coupled waveguides solves the coupling of them. 3‐dB coupler monitoring is performed here by a metal loading. The modulator is fabricated by diffusing Ti into z‐cut LiNbO3. Each patterned waveguide is fabricated by diffusing Ti into z‐cut LiNbO3. Each patterned waveguide is 7 μm wide and the spacing is 7 μm. The 3‐dB coupler is 2.9 mm long, and the excavated slot is 15 mm long, 4 μm wide, and 4.5 μm deep. The overall length is 20.8 mm. For the TM‐like fundamental mode, the half‐wave voltage was 2.8 V, the extinction ratio was −15 dB, and the optical insertion loss was as low as 2.6 dB at the 1.15‐μm wavelength.
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42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking

Three‐dimensional heat‐flow effects in photoacoustic spectroscopy of solids

R. S. Quimby and W. M. Yen

Appl. Phys. Lett. 35, 43 (1979); http://dx.doi.org/10.1063/1.90923 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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All theories of the photoacoustic effect in solids to date have been one dimensional, ignoring lateral heat transport to the cell walls. By studying the dependence of the photoacoustic signal on the position of focused light on the sample’s surface, we have demonstrated experimentally that a three‐dimensional heat‐flow analysis is required in some cases, especially at low chopping frequencies. These results have implications for techniques where one measures the photoacoustic signal as a function of chopping frequency, such as the depth profiling of layered samples.
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78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)

Phonon‐assisted recombination in a multiple‐quantum‐well LPE InP‐In1−xGaxP1−zAsz heterostructure laser

E. A. Rezek, R. Chin, N. Holonyak, S. W. Kirchoefer, and R. M. Kolbas

Appl. Phys. Lett. 35, 45 (1979); http://dx.doi.org/10.1063/1.90924 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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By means of computer‐controlled liquid‐phase epitaxy, multiple‐quantum‐well InP‐In1−xGaxP1−zAsz (x∼0.13, z∼0.29) heterostructures of uniform well (Lz∼160 Å) and coupling barrier size are grown and are examined in photoluminescence. Laser operation (77 °K) of a six‐well five‐barrier undoped quaternary quantum‐well heterostructure is identified an LO phonon energy (1×hωLO∼30 meV) below the lowest confined‐particle transitions (No. 1 e→hh, E1) or at energy hω∼E1−hωLO.
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78.45.+h Stimulated emission
78.55.-m Photoluminescence, properties and materials
68.55.-a Thin film structure and morphology
63.20.-e Phonons in crystal lattices

A discharge pumped laser on the C→A transition of XeF

R. Burnham

Appl. Phys. Lett. 35, 48 (1979); http://dx.doi.org/10.1063/1.90925 (2 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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Direct electrical excitation of laser oscillation centered at 490 nm has been obtained on the C→A transition of XeF in mixtures of He, Xe, and NF3 pumped by a self‐sustained discharge. Laser output appears to have been limited by the short time available for the buildup of oscillation in the transient discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.-s Electric discharges

Kinetics of vacuum‐ultraviolet continuum from a high‐pressure He fast discharge

M. Gand, A. Bouchoule, and J. Stevefelt

Appl. Phys. Lett. 35, 50 (1979); http://dx.doi.org/10.1063/1.90927 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The kinetics of atomic and molecular excited states following a fast discharge in pure high‐pressure helium are resolved on a nanosecond time scale by emission and absorption spectroscopy. Evidence is presented indicating that the Hopfield continuum (600–1100 Å) radiation occurs as a terminal process in a collisional‐radiative cascade subsequent to the electronic recombination of He+2 ions. The radiated peak power in this wavelength range reaches several kW at atmospheric pressure.
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33.20.Ni Vacuum ultraviolet spectra
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Optical distortion coefficient of 〈111〉‐oriented CaF2 windows at chemical laser wavelengths

Claude A. Klein

Appl. Phys. Lett. 35, 52 (1979); http://dx.doi.org/10.1063/1.90928 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Recently, the piezo‐optic constants of CaF2 single crystals have been measured in the infrared. These measurements indicate that the critical orientation in the sense of Joiner, Marburger, and Steier is within 1.9°±1.2° from the [111] direction. It follows that 〈111〉‐oriented CaF2 laser windows do not exhibit any detectable stress birefringence independently of the polarization of the incident beam. On using the best data currently available on relevant properties of single‐crystalline material at 3.39 μm, an evaluation of the optical distortion coefficient χ of 〈111〉‐oriented CaF2 yields an exceptionally small value: χ= (1.0±0.6) ×10−6 K−1. On this basis, it is shown that, in principle, a 1‐cm‐thick AR‐coated CaF2 window can handle average energy fluences of at least 300 kJ/cm2 without violating the Maréchal criterion.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.20.Fm Birefringence
81.40.Tv Optical and dielectric properties related to treatment conditions

Role of the III(1/2) ‐II(1/2) transition in rare‐gas–halide kinetics

P. S. Julienne and M. Krauss

Appl. Phys. Lett. 35, 55 (1979); http://dx.doi.org/10.1063/1.90929 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Rare‐gas–halide spectra have previously been analyzed in terms of the strong III  (1/2) ‐I  (1/2) lasing transition and the weaker II  (3/2) ‐I  (3/2) broad continuum. However, the III  (1/2) ‐II  (1/2) transition is also a broad continuum that strongly overlaps the II(3/2) ‐I(3/2) transition and has an Einstein coefficient of a similar magnitude. The existence of this transition requires a reinterpretation of previous kinetic data on ArF, KrF, XeF, and XeCl. Simultaneous energy extraction from both the III  (1/2) and II(3/2) states should be possible for lasing in the broad continuum.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence

Optimal cavity design for low‐threshold‐current‐density operation of double‐heterojunction diode lasers

Dan Botez

Appl. Phys. Lett. 35, 57 (1979); http://dx.doi.org/10.1063/1.90908 (4 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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A simple and accurate closed‐form expressed for the threshold‐current density Jth in symmetric DH structures is presented. The novel expresion allows analytical solutions for do, the active‐layer thickness corresponding to minimum threshold‐current density. Optimization of the cavity thickness for minimum Jth is presented for wide variations in cavity length (100–500 μm) and facet reflectivity values. The analytical formulas are applied to the AlGaAs/GaAs system and extended to the InGaAsP/InP system. By using previously published experimental results, a linear gain‐current relationship is estimated for InGaAsP (λ=1.2–1.3 μm), and thus it is found that do should vary between 0.12 and 0.20 μm as the cavity parameters (length and facet reflectivity) change; and that minimum Jth values should be comparable to the Jth values for AlGaAs lasers with the same cavity parameters.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Range‐resolved measurements of atmospheric ozone using a differential‐absorption CO2 laser radar

Kazuhiro Asai, Toshikazu Itabe, and Takashi Igarashi

Appl. Phys. Lett. 35, 60 (1979); http://dx.doi.org/10.1063/1.90930 (3 pages) | Cited 24 times

Online Publication Date: 7 August 2008

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A 9.4‐μm CO2 laser radar was used to obtain ozone measurements in the atmosphere with the differential‐absorption method. Concentrations of ozone were measured in the horizontal interval from 0.5 to 2 km with 300‐m range resolution. The measurement uncertainty varied from about ±15 ppb at 0.5 km to about ±40 ppb at 1.5 km. Experimental results showed good agreement between the ozone concentrations measured with the laser radar and those measured by point monitors at various sites.
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42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects
42.60.By Design of specific laser systems
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
92.60.Sz Air quality and air pollution
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