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15 Nov 1979

Volume 35, Issue 10, pp. 727-828

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The mechanism of energy decrease in the XeBr laser

George Balog, Robert K. Sander, and Emma Seegmiller

Appl. Phys. Lett. 35, 727 (1979); http://dx.doi.org/10.1063/1.90964 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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The xenon bromide discharge laser utilizes the reaction of Xe∗ with HBr to produce XeBr∗ in a dilute mixture with He or Ne buffer gas. XeBr lasers previously reported suffer from a high gas usage rate under static fill conditions. This is caused by the decomposition of HBr in the laser discharge to bromine and hydrogen. This reaction can be reversed using a catalyst in an external gas circulating system. We demonstrate a tenfold reduction in the consumption of the laser mix, namely 126 shots per liter of gas mix for decay of laser energy to 75% of maximum.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

The origin of the broadband emission of XeF

M. Rokni, J. H. Jacob, J. C. Hsia, and D. W. Trainor

Appl. Phys. Lett. 35, 729 (1979); http://dx.doi.org/10.1063/1.90965 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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In this letter we report the results of our investigation into the origin of the broadband emission, centered about 460 nm, from XeF∗. This emission has been investigated as a function of mixture ratio and pressure. The gas mixtures were excited by a high‐energy electron beam. From the high‐pressure data there is evidence of additional emission from states other than XeF(B) and XeF(C) when the buffer gas is Ar and Ne. We have tentatively assigned this emission as originating from the excited triatomics ArXeF∗ and NeXeF∗.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)
51.70.+f Optical and dielectric properties

Active pulse shaping in the picosecond domain

J. Agostinelli, G. Mourou, and C. W. Gabel

Appl. Phys. Lett. 35, 731 (1979); http://dx.doi.org/10.1063/1.90966 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Active pulse shaping in the picosecond domain is reported using a fast Pockels cell controlled by an optically driven GaAs electrical switch. The center is sliced out of a long optical pulse, yielding a 70‐psec FWHM pulse with 40‐psec rise and fall times.
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78.20.Jq Electro-optical effects
84.30.Sk Pulse and digital circuits

Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser

R. D. Burnham, D. R. Scifres, W. Streifer, and S. Peled

Appl. Phys. Lett. 35, 734 (1979); http://dx.doi.org/10.1063/1.90967 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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We report pulsed room‐temperature operation of a nonplanar large optical cavity semiconductor laser. As a result of a single LPE growth in an etched channeled substrate, a curved cavity is created which guides the laser light in both transverse dimensions. Representative lasers exhibit 50‐mA thresholds, 40% differential quantum efficiency, 25‐mW power output without kinks, and stable near‐ and far‐field optical patterns.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Laser fluorescence spectroscopy of atomic uranium using a pulsed hollow cathode lamp as a vapor source

E. Miron, R. David, G. Erez, S. Lavi, and L. A. Levin

Appl. Phys. Lett. 35, 737 (1979); http://dx.doi.org/10.1063/1.90968 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A commercial hollow cathode lamp operated in a pulsed mode is used as a source of atomic uranium for spectroscopic measurements based on laser induced fluorescence. This method is especially convenient for stepwise laser spectroscopy of refractory elements.
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32.50.+d Fluorescence, phosphorescence (including quenching)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
52.80.-s Electric discharges

Efficient tunable H2 Raman laser

P. Rabinowitz, A. Stein, R. Brickman, and A. Kaldor

Appl. Phys. Lett. 35, 739 (1979); http://dx.doi.org/10.1063/1.90969 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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We have obtained 85% quantum conversion by stimulated rotational Raman scattering of CO2 laser radiation in para H2. An output energy in excess of 1 J and a peak power of ∼20 MW was measured at 623 cm−1. The prelimininary measurements suggest that the temporal and spatial coherence of the generated Stokes wave are close to the ideal theoretical limitation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Textured silicon: A selective absorber for solar thermal conversion

J. I. Gittleman, E. K. Sichel, H. W. Lehmann, and R. Widmer

Appl. Phys. Lett. 35, 742 (1979); http://dx.doi.org/10.1063/1.90953 (3 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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We have used reactive sputter etching to texture the surface of Si wafers. The texturing was in the form of pillars whose diameters and spacing were small compared with the useful solar wavelengths and whose heights were comparable with or larger than these wavelengths. The normal and hemispherical reflectances of textured wafers were measured. The solar absorptance was found to be 0.99 for wavelengths below 1.0 μm. Because of the sharp drop in absorptance for photon energies less than the energy gap, the overall solar absorptance was about 0.85. The calculated thermal emittance was about 0.25 and was primarily due to multiphoton absorption processes normally observed in thick Si crystals. Much smaller values of thermal emittance would be obtained from thin textured films.
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84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
44.40.+a Thermal radiation
81.40.Tv Optical and dielectric properties related to treatment conditions

Frequency stabilization of 0.633‐μm line with the aid of 3.39‐μm line locked to CH4

Masataka Nakazawa, Jun‐ichi Nakamura, and Toshimitsu Musha

Appl. Phys. Lett. 35, 745 (1979); http://dx.doi.org/10.1063/1.90954 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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0.633‐ and 3.39‐μm lines were brought into simultaneous oscillation with a He‐Ne laser. The 3.39‐μm line was locked to the saturated absorption line of CH4 to control the cavity length, as a result of which the 0.633‐μm line was also frequency stabilized. The frequency stability of the 0.633‐μm line was better than 4.2×10−9/h, which is the stability of a reference laser HP 5500C.
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42.60.By Design of specific laser systems
42.72.-g Optical sources and standards
33.20.Ea Infrared spectra
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Polarization‐independent optical directional coupler switch using weighted coupling

R. C. Alferness

Appl. Phys. Lett. 35, 748 (1979); http://dx.doi.org/10.1063/1.90955 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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We report the first demonstration of a guided‐wave polarization‐independent electro‐optic switch. Using a specially designed weighted Ti‐diffused directional coupler with stepped electrodes, we have achieved crosstalk levels below −23 dB for both switch states for arbitrary incident optical polarization.
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42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
84.40.Ba Antennas: theory, components and accessories

Cd2 as a 470‐nm absorber

Walter J. Stevens

Appl. Phys. Lett. 35, 751 (1979); http://dx.doi.org/10.1063/1.90956 (2 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Multiconfiguration self‐consistent‐field calculations have been carried out on all the valence states, low‐lying rydberg states, and charge‐transfer states of Cd2. Like the other Group IIb dimers studied thus far, the lowest excimer level was found to be a 3Πg metastable state that acts as a reservoir for molecular excitation energy. Strong absorptions between this reservoir state and a bound 3Πu charge‐transfer state are predicted in the vicinity of 470 nm. Weaker, but still significant absorptions, are predicted between the laser state (3Σ+u) and a repulsive 3Σ+g state at the same wavelength. The predicted absorptions could seriously impair laser applications of Cd2 and CdHg.
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31.15.V- Electron correlation calculations for atoms, ions and molecules
33.20.Kf Visible spectra

Optical synchrotron‐Čerenkov radiation

T. M. Rynne and T. Erber

Appl. Phys. Lett. 35, 752 (1979); http://dx.doi.org/10.1063/1.90957 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Synchrotron‐Čerenkov radiation can significantly alter optical emission in the vicinity of the Čerenkov threshold. A convenient illustration is provided by 20‐MeV electrons passing through ethene gas in a 5‐kG field. For ethene densities of the order of 0.5. gm/l, or about 40% STP, the experimentally observable intensity of green light (ω∼2.4 eV) is expected to be amplified by five orders of magnitude over the levels predicted by a simple superposition of synchrotron and Čerenkov radiation.
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41.60.-m Radiation by moving charges
29.40.Ka Cherenkov detectors

Acoustic microscopy of polymer materials

Robert G. Wilson and Paul A. Tucker

Appl. Phys. Lett. 35, 755 (1979); http://dx.doi.org/10.1063/1.90958 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Reflection acoustic microscopy has been used to study polymer materials. Acoustic micrographs of polypropylene spherulites show branching and irregular growth of radial fibrils and a more three‐dimensional interpenetrant nature of the impinging spherulites than does light microscopy. Acoustic micrographs of drawn polypropylene spherulites reveal inhomogeneous destruction of the original spherulites and light and dark contour bands, much like Newton’s rings, that are useful for monitoring thickness uniformity and internal structure of polymer film fabrication.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques

CF4 plasma etching on LiNbO3

C. L. Lee and C. L. Lu

Appl. Phys. Lett. 35, 756 (1979); http://dx.doi.org/10.1063/1.90959 (3 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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CF4 plasma etching was applied to LiNbO3. Ridge structures as thin as 3 μm were fabricated. The resolution was limited by photolithography Al masks. The etched surface showed an optical quality. A horn structure ridge channel wave guide of a width of 20 μm was also etched, and demonstrated good quality in guiding optical waves.
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42.86.+b Optical workshop techniques
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials

Optoacoustic phase angle measurement for probing a metal

G. Busse

Appl. Phys. Lett. 35, 759 (1979); http://dx.doi.org/10.1063/1.90960 (2 pages) | Cited 62 times

Online Publication Date: 7 August 2008

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It is shown that using optoacoustic phase angle scanning rather than amplitude scanning enables precise measurements of subsurface structure in metal. For some applications the method can be an alternative to x‐ray imaging.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
81.70.-q Methods of materials testing and analysis

Impedance‐match experiments using laser‐driven shock waves

L. R. Veeser, J. C. Solem, and A. J. Lieber

Appl. Phys. Lett. 35, 761 (1979); http://dx.doi.org/10.1063/1.90961 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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A high‐energy laser pulse has been used to drive a shock wave into a foil target. Pressures of 0.3 TPa in aluminum and 0.6 TPa in a gold overlay were inferred from simultaneous measurements of the shock velocities. The techniques will be useful in determining high‐pressure equation‐of‐state parameters for a wide variety of materials.
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62.50.-p High-pressure effects in solids and liquids
43.40.+s Structural acoustics and vibration
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity

Electron drift velocities in N2, CO2, and (N2+CO2) laser mixtures

Rafael A. Sierra, Howard L. Brooks, and Kaare J. Nygaard

Appl. Phys. Lett. 35, 764 (1979); http://dx.doi.org/10.1063/1.90962 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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A time‐of‐flight technique has been used to obtain electron drift velocities in N2, CO2, and N2‐CO2 mixtures covering the E/N range 3–93 Td. In the case of the pure gases, excellent agreement with previous work is obtained over the entire E/N range. The mixtures, which are of laser importance, have not been studied previously.
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52.25.Fi Transport properties

Coherent four‐wave scattering in plasmas—application to plasma diagnostics

H. C. Praddaude, D. W. Scudder, and B. Lax

Appl. Phys. Lett. 35, 766 (1979); http://dx.doi.org/10.1063/1.90963 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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An explicit solution for the third‐order nonlinear transverse susceptibility and for the scattered power in a collisionless unmagnetized plasma is presented. We show that a consistent second‐order approximation of the Vlasov equation that treats on equal footing the electric and the magnetic fields of the electromagnetic waves produces a ponderomotive force term that drives various plasma excitations. In analogy with Thomson scattering from thermal fluctuations, the wavevector and frequency dependence of the scattered power is dominated by the first‐order longitudinal susceptibilities of the plasma. Even though the Landau damping may be considerable and the plasma resonances may not be well defined, the coherent nature of this four‐photon process produces a considerably enhanced scattered power within a narrow scattering cone. These features make this technique well suited for plasma diagnostics. These techniques are a close counterpart of the coherent anti‐Stokes Raman spectroscopy and the Raman‐induced Kerr effect spectroscopy used with Raman active transitions in gas, liquid, and solid spectroscopy.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Room temperature instability of electron induced defects in n‐type silicon containing germanium

A. O. Evwaraye

Appl. Phys. Lett. 35, 769 (1979); http://dx.doi.org/10.1063/1.90970 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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n‐type silicon containing germanium was irradiated with a 1.5‐MeV electron beam at 300 K. An electron trap E3(Ec−0.35 eV), not observed in n‐type silicon without germanium, is unstable at room temperature. Annealing studies show that the annealing kinetics is first order; an activation energy for thermal anneal of 0.63 eV and a frequency factor of 2.58×106 sec−1 were estimated. It is suggested that the E3 complex anneals by migrating to sinks where it is modified. This migration is greatly enhanced by changing the charge state of the defect. Reirradiation of E3‐annealed‐out devices does not produce the E3 defect state. This supports the suggestion that the complex does not anneal by dissociation but by migration to sinks where it is modified and tied up.
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61.72.-y Defects and impurities in crystals; microstructure
61.80.Fe Electron and positron radiation effects
72.80.Ey III-V and II-VI semiconductors

Discovery of a new reversible electrochromic effect

P. Pfluger, H. U. Künzi, and H.‐J. Güntherodt

Appl. Phys. Lett. 35, 771 (1979); http://dx.doi.org/10.1063/1.90971 (2 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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A new electrochromic effect based on the electrochemical intercalation of graphite is described. This effect seems to have a promising potential for applications in display devices.
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78.20.Jq Electro-optical effects
85.60.Pg Display systems
82.47.-a Applied electrochemistry

Cyclotron resonance in n‐type In1−xGaxAsyP1−y

H. Brendecke, H. L. Störmer, and R. J. Nelson

Appl. Phys. Lett. 35, 772 (1979); http://dx.doi.org/10.1063/1.90972 (3 pages) | Cited 26 times

Online Publication Date: 7 August 2008

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First experimental data are presented on the nonparabolicity of the conduction band of In1−xGaxAsyP1−y lattice matched to InP. The values for the effective mass, determined from our energy‐dependent measurements, are smaller than all previously reported values. The nonparabolicity of the conduction band is much stronger than previously assumed.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Molybdenum trioxide (MoO3)/silicon photodiodes

C. Osterwald, G. Cheek, J. B. DuBow, and V. R. Pai Verneker

Appl. Phys. Lett. 35, 775 (1979); http://dx.doi.org/10.1063/1.90973 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Molybdenum trioxide (MoO3) has been deposited onto single‐crystal p‐type silicon by neutralized ion‐beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n‐type transparent semiconductor for photovoltaic applications.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

The temperature dependence of band‐to‐band Auger recombination in silicon

L. Huldt, N. G. Nilsson, and K. G. Svantesson

Appl. Phys. Lett. 35, 776 (1979); http://dx.doi.org/10.1063/1.90974 (2 pages) | Cited 30 times

Online Publication Date: 7 August 2008

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The Auger recombination coefficient has been determined from the decay kinetics of highly excited silicon. It was found to be proportional to T0.6, increasing from 3.0×10−31 to 4.6×10−31 cm6s−1 in the temperature interval 195–372 K.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors

Anomalous energy dissipation of intense focused electron beam in low atomic‐number target

S. Miyamoto, K. Imasaki, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 35, 778 (1979); http://dx.doi.org/10.1063/1.90975 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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An energy distribution of transmitted electrons through thin‐foil targets irradiated by a tightly pinched relativistic electron beam has been measured by a multichannel electrostatic particle energy analyzer. The experimental result indicates the existence of an anomalous energy dissipation of beam electron in low‐z target.
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52.40.Mj Particle beam interactions in plasmas
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Composition measurements related to the Cu2S/ZnxCd1−xS heterojunction

L. C. Burton

Appl. Phys. Lett. 35, 780 (1979); http://dx.doi.org/10.1063/1.90976 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Composition of zinc and cadmium have been measured for three key regions related to the formation of Cu2S on ZnxCd1−xX by aqueous ion exchange. These are the ion‐exchange solution, the resulting Cu2S, and the ZnxCd1−xS near the Cu2S‐ZnxCd1−x interface. It is found that the participation of zinc in the ion‐exchange reaction is incomplete. Zinc is thus retained in the p‐n junction region, and is found mainly in the ZnxCd1−xS just under the interface. This phenomenon helps to account for certain differences between electro‐optical properties of Cu2S/CdS and Cu2S/ZnxCd1−xS solar cells.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.03.-g Gas-liquid and vacuum-liquid interfaces
68.05.-n Liquid-liquid interfaces
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.55.-a Thin film structure and morphology

New experimental evidence of the periodic surface structure in laser annealing

M. Oron and G. Sørensen

Appl. Phys. Lett. 35, 782 (1979); http://dx.doi.org/10.1063/1.90977 (3 pages) | Cited 68 times

Online Publication Date: 7 August 2008

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This letter presents a study of the nature of the periodic structure observed on the edge of laser‐annealed spots on ion‐implanted silicon. The direction of the periodic fringes was always found to be about perpendicular to the E vector of the light for linearly polarized beams. No fringe pattern was observed for circular polarization. We suggest that the pattern observed is due to heating by a standing wave resulting from the interference of the impinging wave and a radial (longitudinal) scattered wave.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
85.30.-z Semiconductor devices
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