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1 Dec 1979

Volume 35, Issue 11, pp. 833-895


Low‐noise 86–88‐GHz traveling wave maser

T. C. L. G. Sollner, D. P. Clemens, T. L. Korzeniowski, G. C. McIntosh, E. L. Moore, and K. S. Yngvesson

Appl. Phys. Lett. 35, 833 (1979); http://dx.doi.org/10.1063/1.90996 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A traveling wave maser using iron doped rutile (Fe3+: TiO2) has been developed for a signal frequency of 86–88 GHz. The 3‐dB bandwidth is 40–50 MHz for an electronic gain of 36 dB and a net maser gain of 15–20 dB. Hexagonal aluminum substituted strontium ferrite was used for isolation. A unique overmoded ridge guide structure is used to match pump and signal power to the active material from 30 to 120 GHz. The maser noise temperature has been measured as TMaser =20±10 K.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
84.30.Le Amplifiers
84.40.Lj Microwave integrated electronics
95.85.Bh Radio, microwave (>1 mm)

Tunable single‐longitudinal‐mode operation of an injection‐locked TEA CO2 laser

G. Megie and R. T. Menzies

Appl. Phys. Lett. 35, 835 (1979); http://dx.doi.org/10.1063/1.90997 (4 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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Tunable single‐longitudinal‐mode operation of a transversely excited atmospheric (TEA) CO2 laser has been achieved using an injection technique with a cw waveguide laser as the master oscillator. Tunability in excess of 300 MHz from the CO2 line center is reported for various CO2 lines. A high resolution spectrum of an ozone absorption feature has been recorded using this technique.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
93.85.-q Instruments and techniques for geophysical research: Exploration geophysics
33.20.Ea Infrared spectra

Broadly tunable cw operation of Ni : MgF2 and Co : MgF2 lasers

P. F. Moulton and A. Mooradian

Appl. Phys. Lett. 35, 838 (1979); http://dx.doi.org/10.1063/1.90998 (3 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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Operation of cw Ni : MgF2 and Co : MgF2 lasers with an external cavity has produced broadly tunable emission in the near infrared. The Ni : MgF2 laser was tuned continuously from 1.61 to 1.74 μm and the Co : MgF2 laser from 1.63 to 2.08 μm. Optical pumping with a 1.32‐μm Nd : YAG laser and conduction cooling of the laser crystals to 80 K yielded stable spiking‐free TEM00 outputs from both lasers with maximum cw output powers of about 100 mW. The Ni : MgF2 laser was operated with a single‐frequency output of 20 mW and was Q switched to generate a peak power output of 140 W at a 100‐Hz repetition rate.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Polarization stabilization on single‐mode fiber

R. Ulrich

Appl. Phys. Lett. 35, 840 (1979); http://dx.doi.org/10.1063/1.90999 (3 pages) | Cited 33 times

Online Publication Date: 7 August 2008

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The state of polarization at the output end of a long nominally circular single‐mode optical fiber is stabilized by an active control system. It contains a polarimeter and two electromagnetic fiber squeezers which introduce variable amounts of stress birefringence directly into the fiber, compensating for the effects of changing intrinsic fiber birefringence.
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42.79.Gn Optical waveguides and couplers
84.40.Az Waveguides, transmission lines, striplines
78.20.Fm Birefringence
42.25.Ja Polarization

High‐resolution optoacoustic spectroscopy of rare‐earth oxide powders

A. C. Tam and C. K. N. Patel

Appl. Phys. Lett. 35, 843 (1979); http://dx.doi.org/10.1063/1.91000 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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We report high‐resolution absorption spectroscopy of powdered microsamples using a pulsed laser and a gated optoacoustic detection technique. Our method is simple, sensitive, and easily adaptable for cryogenic cooling of the sample. Quantitative data for Ho2O3, Dy2O3, and Er2O3 powdered crystals are obtained, and identification and analysis of the observed spectral lines are given for Dy2O3 and Er2O3.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.70.-d Level splitting and interactions
42.62.-b Laser applications
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers

Optical bistability at a nonlinear interface

P. W. Smith, J.‐P. Hermann, W. J. Tomlinson, and P. J. Maloney

Appl. Phys. Lett. 35, 846 (1979); http://dx.doi.org/10.1063/1.91001 (3 pages) | Cited 45 times

Online Publication Date: 7 August 2008

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Under suitable conditions, the boundary between a linear and a nonlinear (Kerr effect) medium should have a reflection coefficient which exhibits hysteresis as a function of optical intensity. We present the first experimental evidence of this effect. Experiments were performed using ∼1‐ns ruby laser pulses incident on a glass‐CS2 boundary.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

An intense pulsed magnetically insulated deuteron source

Gregory Endo and Scott Robertson

Appl. Phys. Lett. 35, 849 (1979); http://dx.doi.org/10.1063/1.91002 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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We have constructed a magnetically insulated ion source in which deuterons are extracted from plasma generated by a deuterated titanium washer located within the field excluding anode. Peak beam parameters are 0.8 A/cm2 at 140 kV for 0.4 μsec with a 14‐mm anode‐cathode gap. Faraday cup measurements show significantly fewer impurities in the deuteron beam than in proton beams extracted from surface flashover plasma.
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52.50.Gj Plasma heating by particle beams
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Debye screening modifications in ponderomotive effects

M. S. Sodha and D. Subbarao

Appl. Phys. Lett. 35, 851 (1979); http://dx.doi.org/10.1063/1.90980 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
The effective Debye screening length is shown to be increased in the presence of a high‐power electromagnetic wave. The consequent modifications in ponderomotive redistributive effects and strong violations of charge neutrality have been shown to be in agreement with recent laser‐plasma experiments.
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52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams

Search for shell disintegration in laser implosion experiments

K. Tanaka and E. I. Thorsos

Appl. Phys. Lett. 35, 853 (1979); http://dx.doi.org/10.1063/1.90981 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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The possibility of shell disintegration in thin‐wall targets as indicated by mixing of target surface material into the compressing core in laser‐induced implosions has been investigated. Aluminum coated glass microballoon targets were irradiated by a two‐beam Nd:phosphate glass laser with laser power up to 250 GW on target. The occurrence of mixing in these exploding pusher implosions was determined by using spatially resolved x‐ray spectroscopy. Mixing was not observed except for laser shots with an intentional prepulse (∼10 mJ, 1.5 nsec before the main pulse).
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.-m Plasma diagnostic techniques and instrumentation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)

Theory of elastic properties of composite materials

James G. Berryman

Appl. Phys. Lett. 35, 856 (1979); http://dx.doi.org/10.1063/1.90982 (3 pages) | Cited 21 times

Online Publication Date: 7 August 2008

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A new method of estimating effective macroscopic elastic constants for microscopically inhomogeneous materials is formulated using elastic‐wave scattering theory. The self‐consistent medium is determined by the condition that the scattered long‐wavelength displacement field must vanish on the average. The resulting formulas are simpler to apply than previous methods due to the reduction from tensor to vector equations. Our formulas are automatically symmetric under interchange of constituent labels whereas some other ’’self‐consistent’’ formulations for needle and disk inclusions do not possess this property. For spherical inclusions, the standard self‐consistent elastic constants are reproduced.
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62.30.+d Mechanical and elastic waves; vibrations
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Studies of the Si‐SiO2 interface by MeV ion channeling

N. W. Cheung, L. C. Feldman, P. J. Silverman, and I. Stensgaard

Appl. Phys. Lett. 35, 859 (1979); http://dx.doi.org/10.1063/1.90983 (3 pages) | Cited 30 times

Online Publication Date: 7 August 2008

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By performing backscattering‐channeling measurements in two different geometries on thin Si crystals thermally oxidized at 800 °C, we have obtained upper and lower limits of the number of reconstructed Si layers at the Si‐SiO2 interface. The results indicate an abrupt Si‐SiO2 interface with one to two monolayers of Si reconstruction.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.-b Surface treatments
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Analysis of deterioration in In solder for GaAlAs DH lasers

K. Fujiwara, H. Imai, T. Fujiwara, K. Hori, and M. Takusagawa

Appl. Phys. Lett. 35, 861 (1979); http://dx.doi.org/10.1063/1.90984 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The deterioration of In solder associated with the degradation of GaAlAs DH lasers has been investigated. The deterioration of In solder is found to be caused by the diffusion of Au atoms into In solder. The increase in the thermal resistance of DH lasers is observed for the storage test. The increase in the thermal resistance is caused by the formation of the intermetallics between In and Au, which is thermally activated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Efficient indium tin oxide/polycrystalline silicon solar cells

J. P. Schunck and A. Coche

Appl. Phys. Lett. 35, 863 (1979); http://dx.doi.org/10.1063/1.90985 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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ITO/Si‐N solar cells have been fabricated by a spraying process at 500 °C on polycrystalline silicon. Electroless nickel plating was used for the back Ohmic contact deposition. Electrical characteristics and spectra response of these heterojunctions are compared to those obtained on monocrystalline silicon. AM1 efficiency of ≃9% (based on active area) is achieved for polycrystalline material. Temperature dependence of open‐circuit voltages and short‐circuit currents are comparable to those reported for diffused Si junctions and Si‐based MIS cells.
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84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

High current density Ga+ implantations into Si

R. R. Hart, C. L. Anderson, H. L. Dunlap, R. L. Seliger, and V. Wang

Appl. Phys. Lett. 35, 865 (1979); http://dx.doi.org/10.1063/1.90986 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The lattice disorder produced in Si by a 59‐keV Ga+ ion beam focused to a diameter of 1200 Å and having a current density of 1.2 A/cm2 was compared to that produced by broad area implantations of 59‐keV Ga+ at a current density of 0.4 μA/cm2. Based on 140‐keV proton backscattering, the disorder produced at the high‐dose rate was found to be comparable although deeper than that produced by the low‐dose‐rate implantations. The depth profile of Ga implanted at 1.2 A/cm2 to a dose of 1.5×1015/cm2 was determined by 280‐keV He++ backscattering to be basically consistent with projected range calculations.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation

Pulsed electron beam induced recrystallization and damage in GaAs

J. L. Tandon, I. Golecki, M‐A. Nicolet, D. K. Sadana, and J. Washburn

Appl. Phys. Lett. 35, 867 (1979); http://dx.doi.org/10.1063/1.90987 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Single‐pulse electron‐beam irradiations of 300‐keV 1015Kr+/cm2 or 300‐keV 3×1012 Se+/cm2 implanted layers in unencapsulated 〈100〉 GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ≃20 keV and a time duration of ?10−7 s. Analyses by means of MeV He+ channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Kz Other electron-impact emission phenomena
61.72.U- Doping and impurity implantation

Thin film characterization by atom probe field ion microscopy

S. V. Krishnaswamy, R. Messier, Yee S. Ng, and T. T. Tsong

Appl. Phys. Lett. 35, 870 (1979); http://dx.doi.org/10.1063/1.90988 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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We have demonstrated that the atom probe field ion microscope (APFIM), with its resolution and single atom detection capability, is a potentially valuable thin‐film characterization tool for both structural and compositional analysis. APFIM results for a range of thin films deposited onto Mo FIM tips by rf sputtering show details of void network structures, local ordering in amorphous materials, and atomic clustering effects. For instance, large (∼100–300 Å diameter) isolated voids are seen in WO3 and Ge films while smaller (∼10–100 Å) interconnected voids appear in the metallic films investigated (Ni, Pt, Au). Layer‐by‐layer depth profiling of atomic structure and selected area (10–30 Å diameter) compositional analysis for each layer are possible by pulse evaporation. From these latter experiments the existence of ion clusters is clearly established.
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79.70.+q Field emission, ionization, evaporation, and desorption
36.40.-c Atomic and molecular clusters
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Dynamics of Nd : YAG laser annealing of silicon on sapphire

W. Lüthy, K. Affolter, H. P. Weber, M. E. Roulet, M. Fallavier, J. P. Thomas, and J. Mackowski

Appl. Phys. Lett. 35, 873 (1979); http://dx.doi.org/10.1063/1.90989 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Epitaxial and polycrystalline silicon layers on sapphire have been annealed with Q‐switch pulses from a Nd : YAG laser irradiated on the Si surface. Time‐resolved optical reflectivity measurements have been performed. The annealing process is shown to be induced by melting and subsequent epitaxial regrowth. The best results were obtained if the whole Si layer was melted, thus allowing the (1102) oriented sapphire substrate to act as a seed for recrystallization. In this case commercially available Si‐on‐sapphire (SOS) wafers with additional Si implantation as well as polycrystalline layers of low‐pressure chemical vapor deposited (LPCVD) Si on sapphire could be epitaxially regrown. The same material deposited on amorphous SiO2 did not show epitaxial regrowth, however an increase in size of randomly orientated grains from 60 nm to 1 μm could be achieved.
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81.10.Fq Growth from melts; zone melting and refining
81.40.Tv Optical and dielectric properties related to treatment conditions
81.90.+c Other topics in materials science (restricted to new topics in section 81)
42.62.-b Laser applications

Calculated and measured efficiencies of thin‐film shallow‐homojunction GaAs solar cells on Ge substrates

John C. C. Fan, Carl O. Bozler, and Barbara J. Palm

Appl. Phys. Lett. 35, 875 (1979); http://dx.doi.org/10.1063/1.90990 (4 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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By using a simple analytical model for GaAs solar cells with the nu+/p/p+ shallow‐homojunction structure, we have obtained good between compter calculations and experimental data for the external quantum efficiency and AM1 conversion efficiency of thin‐film GaAs cells with different values of + layer thickness grown on Ge substrates. The calculations yield values for material properties of the GaAs layers composing the cells and also permit the optimization of cell design parameters. In addition, the agreement between calculation and experiment demonstrates that the Ge substrates play a passive role. Thus we have succeeded in fabricating efficient thin‐film GaAs solar cells on non‐GaAs substrates.
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73.40.-c Electronic transport in interface structures
84.60.Jt Photoelectric conversion

Small‐area high‐current‐density Josephson junctions

R. E. Howard, E. L. Hu, L. D. Jackel, L. A. Fetter, and R. H. Bosworth

Appl. Phys. Lett. 35, 879 (1979); http://dx.doi.org/10.1063/1.90991 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Josephson junctions with areas of ∼10−9 cm2 and current densities of 105 A/cm2 are described. The junctions were patterned using a combination of optical lithography and oblique evaporation techniques. The junction width is limited by the lithographic resolution to about 1 μm. The junction length is determined essentially by the base‐electrode film thickness and can be as small as 1000 Å. The moderate (∼10 Ω) normal resistances of these junctions combined with their short intrinsic RC times gives them potential for application in nonlatching Josephson logic and in quasiparticle mm‐wave mixers.
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74.50.+r Tunneling phenomena; Josephson effects

High Tc refractory thin‐film microwave SQUID’s

F. J. Rachford and E. J. Cukauskas

Appl. Phys. Lett. 35, 881 (1979); http://dx.doi.org/10.1063/1.90992 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Thin‐film SQUID’s fabricated from the high Tc refractory material NbN have been studied at 9.4 GHz. Devices with granular weak links display a Josephson critical current dependence over a wide range of temperatures below Tc. We have observed open loop signal‐to‐noise ratios as high as 20 000 corresponding to a minimum detectable energy of 1×10−30 J in a 1 Hz bandwidth over a temperature range of several °K. In two samples, the response time was found to be limited by the intrinsic gap response time, τg∼h/2Δ (T). These devices are rugged, stable, cycle well, and have good SQUID properties at both 9.4 GHz and 20 MHz.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Fatigue effects in unidirectional composites: applications to Nb3Sn superconductors

Stuart F. Cogan and Robert M. Rose

Appl. Phys. Lett. 35, 884 (1979); http://dx.doi.org/10.1063/1.90993 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A computer‐simulated model for the fatigue behavior of multifilamentary unidirectional composites is presented. It is applicable to two‐component composites with perfectly elastic filaments in a ductile matrix, and considers both applied cyclic stresses and strains. Information regarding the change in residual stress state, matrix yield strength, and the number of cycles necessary to stabilize properties by the achievement of totally elastic strains (shakedown), or to reach some preassigned failure stress in the matrix, can be determined. Results obtained are applied directly to the fatigue behavior of multifilamentary Nb3Sn superconducting composites.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

High‐field transport properties of superconducting A15 Nb–Ge and Nb–Ge–Si compounds

Serge Païdassi

Appl. Phys. Lett. 35, 886 (1979); http://dx.doi.org/10.1063/1.90994 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The critical currents of superconducting A15 Nb–Ge and Nb–Ge–Si compounds prepared by CVD have been measured in applied fields up to 18 T. Current densities greater than 105 A cm−2 were obtained at 18 T. These results are discussed with regard to the microstructure of the films which were examined by transmission electron microscopy.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A simple theory of resonance amplitudes in Josephson interferometers

P. Guéret

Appl. Phys. Lett. 35, 889 (1979); http://dx.doi.org/10.1063/1.90995 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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In this letter, we present a theory of interferometer resonance. This theory consists of solving the interferometer equations in the sinusoidal approximation. An expression for the resonance amplitude is obtained which is valid for all Q values and gives perfect agreement with computer simulations. The implications of these results for SFQ memory cells are also discussed.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Josephson effect in Nb nanobridges

R. B. Laibowitz, A. N. Broers, J. T. C. Yeh, and J. M. Viggiano

Appl. Phys. Lett. 35, 891 (1979); http://dx.doi.org/10.1063/1.91003 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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High‐resolution electron‐beam lithographic techniques have been used in the fabrication of thin ultranarrow superconducting Nb stripes. The ac Josephson effect in the form of microwave‐induced current steps has been observed in a series of samples in which the length has been varied from about 1 to 0.1 μm. Studies of the phase slip centers in these samples have led to an estimate for the quasiparticle diffusion length and inelastic scattering time of about 90 nm and 13 ps, respectively.
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74.50.+r Tunneling phenomena; Josephson effects
74.90.+n Other topics in superconductivity (restricted to new topics in section 74)
85.25.-j Superconducting devices
74.78.-w Superconducting films and low-dimensional structures

Weak field magnetoresistance skewness imposed by magnetic field

D. S. Kyriakos and N. A. Economou

Appl. Phys. Lett. 35, 894 (1979); http://dx.doi.org/10.1063/1.91004 (2 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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The effect of a magnetic field on any crystalline material is to introduce an anisotropy in the electric resistivity. This letter examines the anisotropy which appears in the (001) plane of cubic crystals. Compact formulas are developed which show that in general the extreme values of the resistivity occur in directions which differ from those of the crystallographic axes. We thus demonstrate the existence of magnetoresistance skewness, as defined in recent papers of Allgaier et al., but have analyzed the phenomenon from a point of view which is complementary to that employed in the earlier work.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.15.Gd Galvanomagnetic and other magnetotransport effects
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