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15 Jul 1979

Volume 35, Issue 2, pp. 97-206

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Sulfur incorporation and thickness variation in vapor‐phase‐epitaxial GaAs layers for FET’s

F. Vidimari

Appl. Phys. Lett. 35, 158 (1979); http://dx.doi.org/10.1063/1.91064 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Significant nonuniformities in thickness and carrier concentration were observed in thin GaAs layers grown by VPE on semi‐insulating substrates placed parallel to the gas flow in a flat temperature deposition zone. The existence of a boundary layer was taken into account to explain the variation of the growth rate along the flow direction. Since sulfur incorporation showed a linear increasing dependence on the growth rate, it was also influenced by the same mechanism. A modified reactor geometry was employed to improve thickness and doping uniformity up to an overall variation of ±2.5 and ±4%, respectively, over a useful area of about 4 cm2.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices

Properties of conducting transparent oxide films produced by ion plating onto room‐temperature substrates

R. P. Howson, J. N. Avaratsiotis, M. I. Ridge, and C. A. Bishop

Appl. Phys. Lett. 35, 161 (1979); http://dx.doi.org/10.1063/1.91065 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Indium and indium 10% tin oxide films have been produced on room‐temperature insulating substrates and have exhibited high conductivities which compare with the best reported for films made at substrate temperatures of 450 °C and higher. They were made by the evaporation and sputtering of the metals in an atmosphere of argon and oxygen onto a substrate which was one electrode of a rf discharge providing surface bombardment of the substrate. The properties of the films were a function of the oxygen partial pressure, the rf bias voltage, the rate of formation, and gas throughput. It was possible to produce films with mobilities up to 40 cm2 V−1 s−1 with carrier densities up to 3×1020 cm−3 and with conductivities up to 5×104 (Ω m)−1, all of which were transparent in the visible region of the spectrum.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electron‐beam delineation of Pb1−xSnxTe films on BaF2

W. A. Beck, S. P. Buchner, N. E. Byer, and T. S. Sun

Appl. Phys. Lett. 35, 163 (1979); http://dx.doi.org/10.1063/1.91066 (3 pages)

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We find that predeposition electron irradiation of the surface of BaF2 dramatically alters the sticking coefficient for Pb1−xSnxTe and hence can be used to define MBE‐grown films. Auger electron spectroscopy and low‐energy‐diffraction results indicate that room‐temperature e‐beam irradiation of the BaF2 produces a disordered barium oxide surface layer. Upon heating to 450°C, the oxide interacts with residual gases in the MBE vacuum system to form a carbon layer approximately one monolayer in thickness. This surface presents a low sticking coefficient to the Pb1−xSnxTe. On the other hand, irradiation at 450 °C desorbs the carbon and oxide layers and restores a high sticking coefficient.
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68.55.-a Thin film structure and morphology
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.-m Integrated optics

The characterization of highly‐zinc‐doped InP crystals

S. Mahajan, W. A. Bonner, A. K. Chin, and D. C. Miller

Appl. Phys. Lett. 35, 165 (1979); http://dx.doi.org/10.1063/1.91067 (4 pages) | Cited 31 times

Online Publication Date: 7 August 2008

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Highly‐zinc‐doped InP crystals, grown along the 〈111〉 direction by the liquid‐encapsulated Czochralski technique, have been characterized by x‐ray topography, transmission cathodoluminescence, and transmission electron microscopy. It is observed that high zinc doping improves the perfection of crystals insofar as dislocations are concerned. However, not all of the dopant atoms are in solid solution, and it appears that some have clustered to form a high density (∼4×108 cm−2) of fine precipitates with an average size of ∼675 Å.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.S- Impurities in crystals
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.10.Fq Growth from melts; zone melting and refining

Threshold energies for impact ionization by electrons and holes in InP

T. P. Pearsall

Appl. Phys. Lett. 35, 168 (1979); http://dx.doi.org/10.1063/1.91068 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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The threshold conditions for impact ionization in InP at 300 K have been calculated from the electronic band structure along the three major symmetry axes. These calculations show that conditions for electron‐initiated impact ionization in InP are much more favorable than in GaAs.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Minority‐carrier diffusion coefficients in highly doped silicon

J. Dziewior and D. Silber

Appl. Phys. Lett. 35, 170 (1979); http://dx.doi.org/10.1063/1.91024 (3 pages) | Cited 46 times

Online Publication Date: 7 August 2008

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Direct experimental determination of minority‐carrier mobilities and corresponding diffusion coefficients in highly doped p‐ and n‐type silicon have apparently not been performed until now. We have determined the minority‐carrier diffusion coefficient in phosphorus‐ and boron‐doped silicon (doping range 1017–1019 cm−3) at 300 K by measuring the complex diffusion length of minority carriers generated by 10.7‐MHz optical excitation. Converted into mobilities by the Einstein relation, the results do not differ significantly from Irvin’s majority‐carrier mobilities.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors

Thin film MOSFET’s fabricated in laser‐annealed polycrystalline silicon

K. F. Lee, J. F. Gibbons, K. C. Saraswat, and T. I. Kamins

Appl. Phys. Lett. 35, 173 (1979); http://dx.doi.org/10.1063/1.91025 (3 pages) | Cited 41 times

Online Publication Date: 7 August 2008

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Both depletion‐ and enhancement‐mode MOSFET’s have been fabricated with the active transistor channels in laser‐annealed polycrystalline‐silicon films. A dose of 3×1012 31P/cm2 was implanted at 100 keV into 0.5‐μm‐thick poly‐silicon films for the depletion‐mode device, and a dose of 3×1011 11B/cm2 was used for the enhancement‐mode device. The transistors fabricated in the poly‐silicon films show electrical characteristics comparable to those of devices in single‐crystal silicon. In the depletion‐mode device, an electron mobility of ∼450 cm2/Vsec was obtained, and approximately 80% of the phosphorus was electrically active. The surface mobility of electrons was about 340 cm2/V sec in the enhancement‐mode device, and a threshold voltage of approximately 2.5 V was obtained.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology

Laser photodeposition of metal films with microscopic features

T. F. Deutsch, D. J. Ehrlich, and R. M. Osgood

Appl. Phys. Lett. 35, 175 (1979); http://dx.doi.org/10.1063/1.91026 (3 pages) | Cited 86 times

Online Publication Date: 7 August 2008

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Metal deposits with features smaller than 2 μm have been produced by the uv laser‐induced photodissociation of organometallic compounds. Such laser‐induced heterogeneous photochemical processes may have application in several areas of microelectronics including metallization, etching, and growth of semiconductor films.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.60.-v Laser optical systems: design and operation

Low‐temperature annealing behavior of GaAs implanted with Be

C. Lawrence Anderson and H. L. Dunlap

Appl. Phys. Lett. 35, 178 (1979); http://dx.doi.org/10.1063/1.91027 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Ion implantation of Be into GaAs, followed by annealing at temperatures above 475 °C, produces layers with strong p‐type conductivity and high hole mobility. Maximum electrical activation of the Be is obtained by 550 °C. Be appears to be the only dopant in GaAs which can be electrically activated at such low temperatures following implantation. At temperatures in the range 500–630 °C, satisfactory electrical results can be obtained by annealing in argon or vacuum without encapsulation. Little change in the electrical properties occurs for subsequent encapsulated annealing at temperatures up to 800 °C for the fluences used.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance

State‐of‐the‐art performance of GaAlAs/GaAs avalanche photodiodes

H. D. Law, K. Nakano, and L. R. Tomasetta

Appl. Phys. Lett. 35, 180 (1979); http://dx.doi.org/10.1063/1.91028 (3 pages)

Online Publication Date: 7 August 2008

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Ga0.15Al0.85As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 μm, and a microwave optical gain of 42 dB. The dark current density is in the low‐10−8‐A/cm2 range at one‐half the breakdown voltages, and rises to 1.1×10−4 A/cm2 at 42 dB optical gain.
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29.40.Wk Solid-state detectors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Revised model of asymmetric p‐n junctions

David Redfield

Appl. Phys. Lett. 35, 182 (1979); http://dx.doi.org/10.1063/1.91029 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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The standard physical model by which p‐n junctions in semiconductors are generally analyzed is shown to need significant revisions when applied to strongly asymmetrical junctions, such as commonly used in diffused silicon transistor emitters and solar cells. The potential, field, and space‐charge density have much wider spatial distributions on the heavily doped side than generally thought, thus, in effect, widening the ’’junction region’’ there. In addition, Auger processes on that side can reduce the minority‐carrier lifetime sufficiently to cause recombination without defects in the widened space‐charge region and a consequent excess junction saturation current not previously recognized.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

The effect of electron irradiation on the In‐X acceptor in In‐doped silicon

V. Swaminathan, J. E. Lang, P. M. Hemenger, and S. R. Smith

Appl. Phys. Lett. 35, 184 (1979); http://dx.doi.org/10.1063/1.91030 (4 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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We present the results of low‐temperature Hall measurements on 1‐MeV‐electron‐irradiated In‐doped Si. It is observed that the concentrations of the acceptor In‐X, Nx, and the compensating donor ND increase immediately after irradiation with fluences ranging from 2×1015 to 1016 e/cm2. It is suggested that ND increases after irradiation due to the creation of divacancies, interstitial indium, and interstitial indium–substitutional indium pairs, where the interstitial indium atoms occupy the tetrahedral site. To explain the increase in Nx we propose three possible models for In‐X in terms of indium‐vacancy pairs, indium interstitials in the split configuration, or indium interstitials in the bond‐centered configuration.
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41.75.Fr Electron and positron beams
61.72.U- Doping and impurity implantation

A new type of amorphous silicon photovoltaic cell generating more than 2.0 V

Y. Hamakawa, H. Okamoto, and Y. Nitta

Appl. Phys. Lett. 35, 187 (1979); http://dx.doi.org/10.1063/1.91031 (3 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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A new type of plasma‐deposited amorphous silicon photovoltaic cell having a horizontally multilayered p‐i‐n unit‐cell structure has been developed. The open‐circuit voltage Voc is nearly proportional to the number of repetitions of the p‐i‐n unit cell. Almost‐constant energy‐conversion efficiencies of around 4% have been obtained with Voc ranging from 0.6 to 2.4 V by applying a simple optimum design rule to the cell‐construction parameters.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Current‐field characteristics of oxides grown from polycrystalline silicon

Chenming Hu, Ying Shum, Tom Klein, and Elroy Lucero

Appl. Phys. Lett. 35, 189 (1979); http://dx.doi.org/10.1063/1.91032 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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A new technique determined the J‐E characteristics of silicon dioxide grown from polycrystalline silicon with greatly improved sensitivity. More importantly, the current density was measured over a 10‐decade range without the problem of current drift or uncertainty about the field at the cathode surface due to charge trapping in the oxide. The apparent barrier height decreased with increasing electric field as if the barrier lowering was due to field enhancement at surface asperities of about 500 Å in size. The technique is applicable to other dielectrics where charge trapping presents difficulties to J‐E measurements.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
73.40.Ty Semiconductor-insulator-semiconductor structures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Improved electrical mobilities from implanting InP at elevated temperatures

D. Eirug Davies, J. J. Comer, J. P. Lorenzo, and T. G. Ryan

Appl. Phys. Lett. 35, 192 (1979); http://dx.doi.org/10.1063/1.91033 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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InP has been implanted with silicon to investigate the effect of implantation temperature on the postannealed electrical mobility. A significant improvement, by a factor of ∼2, occurs on implanting at 200 °C rather than at room temperature. Dislocations found after the room‐temperature but not the 200 °C implants may account for the mobility differences.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation

Shallow acceptors and p‐type ZnSe

K. Kosai, B. J. Fitzpatrick, H. G. Grimmeiss, R. N. Bhargava, and G. F. Neumark

Appl. Phys. Lett. 35, 194 (1979); http://dx.doi.org/10.1063/1.91034 (3 pages) | Cited 41 times

Online Publication Date: 7 August 2008

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Shallow acceptors have been incorporated in ZnSe by liquid‐phase epitaxy using Bi as a solvent. Epilayers with Li, Na, N, and P as dopants were proven to be p type by establishing the position of the Fermi level by photocapacitance and photoconductivity measurements, and by measuring the potential drop at biased Schottky barriers.
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72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects

Amphoteric behavior of Ge implants in GaAs

Y. K. Yeo, J. E. Ehret, F. L. Pedrotti, Y. S. Park, and W. M. Theis

Appl. Phys. Lett. 35, 197 (1979); http://dx.doi.org/10.1063/1.91035 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The electrical properties of Ge‐implanted GaAs have been studied. Room‐temperature implantation was performed at 120 keV with doses ranging from 5×1012 to 3×1015/cm2. Implanted samples were annealed with pyrolytic Si3N4 encapsulants at temperatures ranging from 700 to 950 °C. It was found that both p‐ and n‐type layers were produced, depending upon ion dose and anneal temperature. For doses of ∼1×1014/cm2 or below, the implanted layer is p type at anneal temperatures up to 950 °C, with electrical activation up to 38%. For doses of ∼1×1015/cm2 or above, the implanted layer is n type at all anneal temperatures, with activation up to 5%. For the intermediate dose of 3×1014/cm2, the conductivity changes from p to n type at an anneal temperature between 900 and 950 °C.
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61.72.U- Doping and impurity implantation
61.72.-y Defects and impurities in crystals; microstructure
72.20.-i Conductivity phenomena in semiconductors and insulators
71.55.-i Impurity and defect levels

Electron energy loss spectroscopy studies of the Si‐SiO2 interface

T. Adachi and C. R. Helms

Appl. Phys. Lett. 35, 199 (1979); http://dx.doi.org/10.1063/1.91036 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

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We have performed, for the first time, measurements of the electronic structure of the Si‐SiO2 interface with electron energy loss spectroscopy (ELS) in connection with argon‐ion sputtering. We have measured the depth profiles of both the 5.1‐ and 7.2‐eV ELS peaks, which have been previously observed for both the Si surface with oxygen adsorbed and SiO2 with defects present. We have found that the intensities of these peaks, especially that of the 5.1‐eV peak, show a maximum at the Si‐SiO2 interface. This suggests that these ELS peaks come from special bonding configurations characteristic of the connective layer between Si and SiO2 at the interface.
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71.20.-b Electron density of states and band structure of crystalline solids
73.20.-r Electron states at surfaces and interfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Measurements of the rectifying barrier heights of the various iridium silicides with n‐Si

J. de Sousa Pires, P. Ali, B. Crowder, F. d’Heurle, S. Petersson, L. Stolt, and P. A. Tove

Appl. Phys. Lett. 35, 202 (1979); http://dx.doi.org/10.1063/1.91037 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n‐type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.61.-r Electrical properties of specific thin films
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

The effect of an inhomogeneous bias field on the delay characteristics of magnetostatic forward volume waves

Makoto Tsutsumi, Yoshihiko Masaoka, Takashi Ohira, and Nobuaki Kumagai

Appl. Phys. Lett. 35, 204 (1979); http://dx.doi.org/10.1063/1.91038 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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The delay and loss characteristics of magnetostatic forward volume waves in a YIG slab have been studied experimentally where an inhomogeneous bias field is applied normal to the slab surface by using artificially designed magnetic pole pieces. The nondispersive group delay characteristics with a low propagation loss are observed.
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75.30.Ds Spin waves
85.70.Ge Ferrite and garnet devices
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