APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Aug 1979

Volume 35, Issue 3, pp. 209-298

Page 1 of 2 Pages Next Page | Jump to Page

The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions

M. B. Small, R. Ghez, R. M. Potemski, and J. M. Woodall

Appl. Phys. Lett. 35, 209 (1979); http://dx.doi.org/10.1063/1.91096 (2 pages) | Cited 10 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
When solid GaAs is placed in an undersaturated solution of Ga, Al, and As, it has been observed that a layer of the solid Ga1−xAlxAs forms on the surface. In the past the presence of this layer has been attributed to a process of regrowth following sufficient dissolution to saturate the solution. On the other hand, an analysis of the kinetics of the situation has suggested that dissolution should be continuous and that the surface layer is formed by solid diffusion. An experiment is reported here in which the solid is forced to dissolve continuously, and a layer of Ga1−xAlxAs of similar thickness to those reported by others has been found to be produced on the surface. Such a layer could not have been produced by regrowth. In order to be produced by solid diffusion, the diffusion coefficient of Al in GaAs must be anomalously high.
Show PACS
68.55.-a Thin film structure and morphology

Self‐diffusion in intrinsic silicon

Ludomir Kalinowski and Remy Seguin

Appl. Phys. Lett. 35, 211 (1979); http://dx.doi.org/10.1063/1.91097 (3 pages) | Cited 51 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The silicon self‐diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion‐analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175 °C from which an activation energy 110.6 kcal/mole was obtained.
Show PACS
66.30.H- Self-diffusion and ionic conduction in nonmetals

Carbon and oxygen role for thermally induced microdefect formation in silicon crystals

Seigô Kishino, Yoshiaki Matsushita, and Masaru Kanamori

Appl. Phys. Lett. 35, 213 (1979); http://dx.doi.org/10.1063/1.91098 (3 pages) | Cited 29 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Thermally induced microdefect formation phenomena are investigated in connection with oxygen and carbon in silicon crystals by using x‐ray diffraction, infrared absorption, and etching/optical microscope observation techniques. In order to investigate the carbon and oxygen role for microdefect formation, oxygen‐diffused floating‐zone‐grown silicon crystals, containing various carbon contents, are thermally treated. As a result, it is ascertained that the coexistence of both carbon and oxygen is necessary for the microdefect formation. It is also determined that the critical oxygen concentration for microdefect introduction by the heat treatment is about (5–6) ×1017 cm−3.
Show PACS
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.-h Diffusion in solids
81.65.-b Surface treatments
61.72.Nn Stacking faults and other planar or extended defects

SAW dispersion and film‐thickness measurement by acoustic microscopy

R. D. Weglein

Appl. Phys. Lett. 35, 215 (1979); http://dx.doi.org/10.1063/1.91099 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
The reflection acoustic microscope has been used to measure SAW velocity dispersion and to indirectly measure the film thickness in a layered composite consisting of Au on a Si substrate. A quantitative thickness determination was made via the acoustic material signature technique, that is nondestructive and noncontacting. A theoretical prediction of SAW dispersion is in excellent agreement with these measurements.
Show PACS
43.35.Ns Acoustical properties of thin films
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.60.-p Physical properties of thin films, nonelectronic

A new surface‐acoustic‐wave cut of quartz with orthogonal temperature‐compensated propagation directions

Robert M. O’Connell

Appl. Phys. Lett. 35, 217 (1979); http://dx.doi.org/10.1063/1.91100 (3 pages)

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
A theoretical study of the surface‐acoustic‐wave (SAW) properties of quartz has produced a new cut which is temperature compensated along two orthogonal directions. This new cut is attractive for use in reflection‐grating devices such as the reflective array compressor (RAC), in which orthogonal propagation paths are required. Except for a small electromechanical power flow angle, the SAW properties along the two temperature‐compensated directions are similar to those of x‐propagating ST‐cut quartz. Because the attractive propagation paths lie in the plane of a singly rotated crystal cut, it should be relatively easy and inexpensive to manufacture.
Show PACS
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.35.Pt Surface waves in solids and liquids
65.40.De Thermal expansion; thermomechanical effects

Face dependence of the spin polarization of photoelectrons from NEA GaAs (100) and (110)

D. T. Pierce, G. C. Wang, and R. J. Celotta

Appl. Phys. Lett. 35, 220 (1979); http://dx.doi.org/10.1063/1.91101 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
We present measurements of the spin polarization P of photoelectrons from negative electron affinity (NEA) GaAs (100) and find P=43% at a photon energy of 1.57 eV. This contrasts with a maximum P=21% measured by Erbudak and Reihl for NEA GaAs (110), which led them to conclude that NEA and high P exclude each other. This difference in P is important for sources of polarized electrons employing photoemission from GaAs. We suggest that the origin of this difference may be connected with differences in the photoelectron emission process at the two faces, as calculated by Burt and Inkson.
Show PACS
81.65.-b Surface treatments
85.60.Dw Photodiodes; phototransistors; photoresistors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Niobium silicide formation induced by Ar‐ion bombardment

T. Kanayama, H. Tanoue, and T. Tsurushima

Appl. Phys. Lett. 35, 222 (1979); http://dx.doi.org/10.1063/1.91102 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
The effect of Ar‐ion bombardment on evaporated–Nb‐on‐Si systems has been investigated with He backscattering and x‐ray‐diffraction measurements. High‐dose bombardment with energetic Ar ions was found to induce intermixing between Nb and Si in the form of NbSi2. This effect has strong dependence on temperature during bombardment, although it cannot be explained as enhanced diffusion due to radiation damage or ion‐beam heating.
Show PACS
61.80.Jh Ion radiation effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
64.75.-g Phase equilibria

Ion‐beam‐induced formation of the PdSi silicide

B. Y. Tsaur, S. S. Lau, and J. W. Mayer

Appl. Phys. Lett. 35, 225 (1979); http://dx.doi.org/10.1063/1.91103 (3 pages) | Cited 27 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si‐Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing‐angle x‐ray‐diffraction analysis. Subsequent thermal annealing at 300–400 °C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.
Show PACS
61.05.C- X-ray diffraction and scattering
61.80.-x Physical radiation effects, radiation damage
64.70.-p Specific phase transitions
68.55.-a Thin film structure and morphology

Annealing of phosphorus‐ion‐implanted silicon using a CO2 laser

M. Miyao, K. Ohyu, and T. Tokuyama

Appl. Phys. Lett. 35, 227 (1979); http://dx.doi.org/10.1063/1.91079 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Annealing behavior of phosphorus implanted in silicon layers under cw CO2 laser irradiation is investigated. The irradiation time required for full electrical activation is found to depend on the dopant concentration of the substrate. This is because absorption of CO2 laser light is a function of free‐carrier concentration in the crystalline substrate. During the experiment, an enhancement of annealing efficiency is observed in the case of a low‐resistivity substrate or with bias light (Xe lamp) irradiation. This supports the above explanation.
Show PACS
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Efficiency enhancement in manganese‐doped zinc silicate phosphor with AlPO4 substitution

I. F. Chang and M. W. Shafer

Appl. Phys. Lett. 35, 229 (1979); http://dx.doi.org/10.1063/1.91080 (3 pages) | Cited 15 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Large increases in the efficiency of the conventional P1 phosphor (Zn2SiO4 : Mn) have been achieved by substituting various combinations of III and V oxides for SiO2, e.g., Zn2−yMnySi1−2xAlxPxO4. The photoluminescence efficiency of these phosphors exhibit strong dependence on the AlPO4 substitution concentration x having highest efficiency for x=0.5–1.5%. Cathodoluminescence and decay measurements show that such materials can have CL efficiency greater than the commercial zinc silicates and still have comparable persistence characteristics.
Show PACS
78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence

Self‐aligned structure InGaAsP/InP DH lasers

H. Nishi, M. Yano, Y. Nishitani, Y. Akita, and M. Takusagawa

Appl. Phys. Lett. 35, 232 (1979); http://dx.doi.org/10.1063/1.91081 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Self‐aligned structure InGaAsP/InP DH lasers with emission wavelengths near 1.3 μm are studied. A cw threshold of about 100 mA is obtained in these lasers with cavity lengths of about 300 μm at a heat sink temperature of 25 °C. Light output increases linearly with current for outputs of 10 mW per facet and no kinks appear. Fundamental‐transverse and single‐longitudinal mode oscillation, and stable operation of fundamental‐transverse mode against injection current, are achieved. A cw operation up to 72 °C is obtained with a laser.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
72.80.Ey III-V and II-VI semiconductors

A geodesic optical waveguide lens fabricated by anisotropic etching

A. Naumaan and J. T. Boyd

Appl. Phys. Lett. 35, 234 (1979); http://dx.doi.org/10.1063/1.91082 (3 pages) | Cited 20 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
A geodesic optical waveguide lens which has been fabricated by anisotropic etching on a silicon substrate is reported. Reflow of phosphosilicate glass provides considerable rounding at sharp edges to reduce scattering. Successful operation of the waveguide lens is illustrated by observation of guided beam trajectories traversing different portions of the lens and converginng to a common point and by measurements of the focal‐plane diffraction pattern. A beam width which is 1.7 times the diffraction‐limited value for a f/15 lens is measured.
Show PACS
42.82.-m Integrated optics
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Long‐wavelength stimulated emission via cascade laser action in Ho : YLF

L. Esterowitz, R. C. Eckardt, and R. E. Allen

Appl. Phys. Lett. 35, 236 (1979); http://dx.doi.org/10.1063/1.91083 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Two cascade laser schemes are demonstrated for Ho3+ in LiYF4. The first involves the 5S2, 5I5, and 5I7 manifolds with laser oscillation at 1.392 and 1.673 μm, and the second involves the 5S2, 5I5, and 5I6 manifolds with laser oscillations at 1.392 and 3.914 μm. The 3.9‐μm transition is the longest‐wavelength rare‐earth laser achieved to date and further the system has attractive engineering practicality. The specificity of excitation inherent in the cascade approach is considered essential in overcoming the adverse multiphonon relaxation processes at long wavelengths.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Laser action at 3577 Å in proton‐beam‐pumped Ar‐N2 mixtures

L. G. Wiley, D. A. Hammer, and R. A. McFarlane

Appl. Phys. Lett. 35, 239 (1979); http://dx.doi.org/10.1063/1.91084 (4 pages) | Cited 3 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Laser action at 3577 Å has been achieved in argon/nitrogen mixtures of 400–1140 Torr total pressure by use of an intense proton beam from a magnetically insulated diode. The threshold for laser action in 700 Torr of 75% Ar/25% N2 was ∼1.3 MW/cm3 of deposited proton beam power. Laser power increased nearly four orders of magnitude as the deposited energy was raised to 15 times the threshold value. Amplified spontaneous emission increased rapidly with a deposited proton power of ≳16 MW/cm3. A maximum laser intensity of 450 kW/cm2 (1.1 mJ for 20 nsec FWHM with a 0.12‐cm2 area) was obtained, without optimization of the output coupling mirror, in 25% N2 mixtures at 1140 Torr total pressure.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
42.60.By Design of specific laser systems

Characterization of neutron‐transmutation doping in silicon by the photoluminescence technique

Michio Tajima

Appl. Phys. Lett. 35, 242 (1979); http://dx.doi.org/10.1063/1.91085 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
The photoluminescence (PL) technique has been applied to the nondestructive characterization of neutron‐transmutation doping in silicon crystals for the first time. We demonstrate the simultaneous determination of B and P concentrations both in the starting materials and in the doped crystals by the PL method. The drastic changes in the PL spectrum due to the neutron irradiation and the subsequent heat treatment reflect the behavior of the radiation damage and the annealing effect.
Show PACS
61.80.Hg Neutron radiation effects
81.40.Tv Optical and dielectric properties related to treatment conditions
78.40.Fy Semiconductors

Microstructure of plasma‐deposited a‐Si : H films

J. C. Knights and R. A. Lujan

Appl. Phys. Lett. 35, 244 (1979); http://dx.doi.org/10.1063/1.91086 (3 pages) | Cited 140 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Using transmission and scanning electron microscopy, it is shown that plasma deposition of amorphous silicon hydrogen films from silane or silane/argon mixtures proceeds via nucleation and growth of islands of average lateral dimensions ∼100 Å. If these islands do not coalesce into a homogeneous film, subsequent growth produces columnar morphology with low‐density interstitial regions. There is a strong correlation between the columnar structure and the presence of nonradiative recombination centers.
Show PACS
68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

XeF ground‐state dissociation and vibrational equilibration

S. F. Fulghum, M. S. Feld, and A. Javan

Appl. Phys. Lett. 35, 247 (1979); http://dx.doi.org/10.1063/1.91087 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The time evolution of the population in XeF ground‐electronic‐state vibrational levels is studied using a laser‐induced fluorescence technique. The results indicate that a quasiequilibrium distribution is rapidly established within the vibrational manifold and that the dissociation rate of the molecular ground state as a whole is (1.4±0.3) ×104 sec−1 Torr.−1.
Show PACS
33.20.Tp Vibrational analysis
34.50.Ez Rotational and vibrational energy transfer

Effect of nonlinear index changes on degenerate four‐wave mixing

John H. Marburger and Juan F. Lam

Appl. Phys. Lett. 35, 249 (1979); http://dx.doi.org/10.1063/1.91088 (3 pages) | Cited 23 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Unavoidable refractive‐index changes induced by the pump beams in DFWM reduce the gain and shift its spectral pass band when the forward and backward pump intensities are unequal. The full linearized DFWM equations also imply large non‐phase‐conjugate signals in a collinear geometry. These effects influence the onset and spectrum of ’’spontaneous oscillation.’’
Show PACS
42.65.-k Nonlinear optics

InGaAsP heterostructure avalanche photodiodes with high avalanche gain

Katsuhiko Nishida, Kenko Taguchi, and Yoshishige Matsumoto

Appl. Phys. Lett. 35, 251 (1979); http://dx.doi.org/10.1063/1.91089 (3 pages) | Cited 59 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Distinct improvements in avalanche‐gain and dark‐current characteristics have been made in InGaAsP heterostructure APD’s. A planar‐type p‐n junction is formed in an InP window layer, separated from a light‐absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark‐current density as low a 1 μA/cm2 at 0.5 Vb.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Helmholtz resonance cells for pulsed dye laser‐excited high resolution optoacoustic spectroscopy

Robert W. Shaw

Appl. Phys. Lett. 35, 253 (1979); http://dx.doi.org/10.1063/1.91090 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
The signal waveform observed in optoacoustic measurements is complex and highly dependent on sample for open‐cavity cells and pulsed optical excitation. A Helmholtz resonator (HR) cell has been employed to reduce this dependence on sample and thus simplify signal processing. The cell background signal is likewise reduced with the HR cell. An optoacoustic (OA) spectrum of holmium oxide powder is presented to demonstrate the utility of this cell with pulsed dye laser excitation for acquistion of high resolution OA spectra of solids.
Show PACS
07.60.Rd Visible and ultraviolet spectrometers
78.40.Ha Other nonmetallic inorganics
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.38.Kb Microphones and their calibration

High‐speed cutoff modulator using a Ti‐diffused LiNbO3 channel waveguide

A. Neyer and W. Sohler

Appl. Phys. Lett. 35, 256 (1979); http://dx.doi.org/10.1063/1.91091 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
A high‐speed intensity modulator has been fabricated taking advantage of the dependence of waveguide cutoff on its index of refraction. The modulator consists essentially of a 2‐μm‐wide 3.2‐mm‐long Ti‐diffused channel waveguide in y‐cut LiNbO3. By controlling the propagation cutoff through the electro‐optic effect, an intensity modulation is obtained. The potential bandwidth, optical insertion loss, and specific energy at 0.63 μm are 5.3 GHz, 11 dB, and 230 μW/MHz, respectively. A brief analysis of modulator operation is given based on coupled‐mode theory.
Show PACS
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

MIS solar cells with back surface fields

N. G. Tarr, D. L. Pulfrey, and P. A. Iles

Appl. Phys. Lett. 35, 258 (1979); http://dx.doi.org/10.1063/1.91092 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Al‐SiOx‐pSi MIS solar cells have been fabricated on 10‐Ω cm substrates both with and without back surface fields. The back‐surface‐field structure has been found to significantly enhance the open‐circuit voltage of these cells, and Voc values in excess of 580 mV have been recorded at photocurrent densities of 300 A m−2. These results provide further evidence that MIS diodes can be produced in which the dark current is dominated by minority‐carrier flows.
Show PACS
84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Hi Surface barrier, boundary, and point contact devices

Optical directional couplers with weighted coupling

R. C. Alferness

Appl. Phys. Lett. 35, 260 (1979); http://dx.doi.org/10.1063/1.91093 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
We have fabricated optical directional couplers using titanium‐diffused waveguides for which the coupling strength is carefully weighted along the device. With a Hamming function weighting, −25‐dB transfer response sidelobes have been obtained, a 17‐dB reduction over the uniform coupling case. Sidelobe reduction results in a significant increase in the performance of directional coupler filters and switches.
Show PACS
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Relationships of electrical properties and melting threshold in laser‐annealed ion‐implanted silicon

K. L. Wang, Y. S. Liu, and C. Burman

Appl. Phys. Lett. 35, 263 (1979); http://dx.doi.org/10.1063/1.91094 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
This paper describes a study comparing the results of the electrical measurements and the regrowth behavior of ion‐implanted silicon annealed with an 80‐ns (FWHM) laser pulse at 1.06 μm. Certain correlations were established among the threshold energy density required for melting, the dopant distributions, and the diode junction depth and leakage. It is demonstrated that in order to obtain low‐leakage diodes, the anneaing energy density, which depends upon the implant conditions, far exceeds the melting energy density as determined from the transient optical‐reflectivity change.
Show PACS
61.72.U- Doping and impurity implantation
79.20.Ds Laser-beam impact phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Spray‐deposited high‐efficiency SnO2/n‐Si solar cells

Tom Feng, Amal K. Ghosh, and Charles Fishman

Appl. Phys. Lett. 35, 266 (1979); http://dx.doi.org/10.1063/1.91095 (3 pages) | Cited 24 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
SnO2/n‐Si solar cells (area=1 and 4 cm2) having AM1 efficiencies of 12.3% on single‐crystal silicon and 10.1% on polycrystalline silicon have been fabricated. The tin oxide is deposited by spraying a SnCl4 mixture onto heated silicon substrates. Using this low‐cost process, large‐area (20‐cm2) single‐crystal cells having 10% efficiency have also been made. The smaller diffusion length and higher resistivity in the polycrystalline silicon (Wacker) accounts for its lower efficiency as compared to single‐crystal cells.
Show PACS
68.03.Fg Evaporation and condensation of liquids
84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close