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1 Aug 1979

Volume 35, Issue 3, pp. 209-298

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Spectrally selective surfaces of Ni‐pigmented anodic Al2O3

C. G. Granqvist, Å. Andersson, and O. Hunderi

Appl. Phys. Lett. 35, 268 (1979); http://dx.doi.org/10.1063/1.91078 (3 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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Ni pigmentation of anodic Al2O3 is obtained by electrolytic coloration. Durable coatings with good spectral selectivity (a/e≃8) are produced. Scanning electron microscopy, Auger depth profiling, and atomic absorption analysis lead to the formulation of a detailed structural model, its most essential feature being a thin layer comprising a mixture of Ni and Al2O3 located near the bottom of the anodic film. Experimental spectral reflectance data agree well with computer calculations, provided the optical properties of the metal‐insulator layer are described with the Bruggeman effective medium theory.
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78.66.Bz Metals and metallic alloys
81.40.Tv Optical and dielectric properties related to treatment conditions
84.60.-h Direct energy conversion and storage

Fabrication of superconducting Nb3Sn‐Cu composites

J. D. Verhoeven, E. D. Gibson, C. V. Owen, J. E. Ostenson, and D. K. Finnemore

Appl. Phys. Lett. 35, 270 (1979); http://dx.doi.org/10.1063/1.91104 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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A new process has been developed for the fabrication of multifilamentary composites of Nb3Sn in a Cu matrix. Dendritic Cu‐Nb alloys are cast as 2.5‐kg billets and extruded to a tube shape. The core of the tube is filled with a Sn–5 wt% Cu alloy, and the assembly is drawn to 0.015‐cm‐diam wire with no intermediate anneals. Reaction of the wire at 550 °C for two days gives a product suitable for magnets in the 8–14‐T range.
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74.25.-q Properties of superconductors

Cellular structure and silicide formation in laser‐irradiated metal‐silicon systems

G. J. van Gurp, G. E. J. Eggermont, Y. Tamminga, W. T. Stacy, and J. R. M. Gijsbers

Appl. Phys. Lett. 35, 273 (1979); http://dx.doi.org/10.1063/1.91105 (3 pages) | Cited 44 times

Online Publication Date: 7 August 2008

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Laser irradiation of thin Co, Mo, and Pd films on single‐crystalline silicon using Q‐switched Nd‐YAG laser pulses was shown by He backscattering to result in deep metal penetration into the Si. Evidence of the silicide formation was obtained by x‐ray diffraction. Transmission electron microscopy showed the simultaneous occurrence of two types of cells with metal‐rich walls: small cells of about 0.1‐μm diameter, attributed to rapid solidification from a supercooled melt, and larger cells of about 1‐μm diameter, attributed to convection in the melt (Bénard cells).
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68.55.-a Thin film structure and morphology
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.53.-k Femtochemistry

Carrier‐concentration reduction in high‐dose phosphorus‐implanted silicon caused by wet‐oxygen oxidation

K. Yagi, K. Oyu, M. Tamura, and T. Tokuyama

Appl. Phys. Lett. 35, 275 (1979); http://dx.doi.org/10.1063/1.91069 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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The redistribution of heavily implanted phosphorus atoms (⩾1×1016 ions/cm2) in the silicon substrate has been studied for wet‐oxygen oxidation in the temperature range 700–1000 °C. The total carrier concentration of implanted layers is observed to decrease after wet‐oxygen oxidation. Electron microprobe measurements show that the observed decrease corresponds to the inclusion of phosphorus atoms into the growing oxide films. Under certain conditions the phosphorus concentration in the substrate after wet‐oxygen oxidation is found to be reduced to less than 20% of the as‐implanted concentration.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Back surface gettering and Cr out‐diffusion in VPE GaAs layers

T. J. Magee, J. Peng, J. D. Hong, C. A. Evans, V. R. Deline, and R. M. Malbon

Appl. Phys. Lett. 35, 277 (1979); http://dx.doi.org/10.1063/1.91070 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Mechanical back surface damage gettering has been investigated for improving the quality of GaAs substrates and VPE layers on semi‐insulating GaAs. It has been shown that the pregettering of substrates reduces the interfacial defect density and alters the level of Cr out‐diffusion into the VPE layer during growth. At a postdeposition anneal temperature of 800 °C, Cr out‐diffusion into the VPE layer is relatively suppressed in the pregettered substrate, while the ungettered sample shows larger concentrations of Cr within the epitaxial layer.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.-y Defects and impurities in crystals; microstructure

Solid‐state epitaxial growth of deposited Si films

M. von Allmen, S. S. Lau, J. W. Mayer, and W. F. Tseng

Appl. Phys. Lett. 35, 280 (1979); http://dx.doi.org/10.1063/1.91071 (3 pages) | Cited 34 times

Online Publication Date: 7 August 2008

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Epitaxial growth by furnace annealing of amorphous Si layers deposited onto 〈100〉 Si substrates is demonstrated. Substrate cleaning prior to the evaporation includes only conventional chemical procedures without any attempt to achieve an atomically clean substrate layer interface. The crystalline quality of the grown layers near the surface is comparable to that of 〈100〉 Si regrown layers amorphized by Si implantation. Residual damage is usually found near the substrate‐layer interface. The growth mechanism is believed to be vertical growth of isolated epitaxial columns which subsequently grow laterally to consume the remaining amorphous Si.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Pulsed‐electron‐beam annealing of polycrystalline‐silicon films

T. I. Kamins and A. C. Greenwald

Appl. Phys. Lett. 35, 282 (1979); http://dx.doi.org/10.1063/1.91072 (4 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Pulsed‐electron‐beam annealing of moderately‐phosphorus‐doped poly‐silicon films reduces their resistance below that of thermally annealed films under optimum conditions. In heavily doped films, the electron pulse can cause the effective dopant concentration to exceed that corresponding to solid solubility, but the excess dopant does not stay in solution upon subsequent heat treatment.
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61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.40.Bh Computer-aided design of microcircuits; layout and modeling
72.20.Fr Low-field transport and mobility; piezoresistance

Nucleation‐controlled thin‐film interactions: Some silicides

R. Anderson, J. Baglin, J. Dempsey, W. Hammer, F. d’Heurle, and S. Petersson

Appl. Phys. Lett. 35, 285 (1979); http://dx.doi.org/10.1063/1.91073 (3 pages) | Cited 33 times

Online Publication Date: 7 August 2008

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Silicides formed by the interaction of a metal thin film with a single‐crystal silicon substrate usually grow in layers according to diffusion‐ or reaction‐controlled kinetics. The mechanism of the formation of five silicides, IrSi3, Rh4Si5, Hf Si2, NiSi2, and PdSi, share common aspects which set them categorically apart from IrSi1.75, RhSi, HfSi, NiSi, and Pd2Si, which form in the usual way. It is proposed that the nucleation process of IrSi3, Rh4Si5, HfSi2, NiSi2, and PdSi results from the respective small driving forces and the ensuing importance of usually negligible stress and/or surface effects.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Transformation from Ohmic to offset behavior for the on state of an amorphous semiconductor threshold switch for interruptions greater than 12 ns

Gary C. Vezzoli

Appl. Phys. Lett. 35, 288 (1979); http://dx.doi.org/10.1063/1.91074 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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In measuring the on‐state I‐V curve of an amorphous semiconductor threshold switch it is essential that the addressing voltage pulse does not allow a subholding voltage interval which is longer than a ’’distribution free carrier lifetime’’ in order that only on‐state properties be detected. If the voltage is not allowed to fall beneath the holding level for longer than about 12 ns, the well‐known offset barrier of the transient on characteristics (TONC) does not develop, and, instead, the on‐state curve is linear and largely temperature independent. The time interval τ1≈12 ns is interpreted as the distribution free carrier lifetime, or the average time interval of subholding voltage during which a sufficient number of carriers can either redistribute across the device, or can recombine into traps, to initiate the development of the offset barrier voltage in the TONC. The offset voltage, or what is called the blocked on state or the transient off state, is thus not a true element of the metal‐like on state and is instead representative of the semiconductive intermediate states which bridge the normal off state and the true on state and which may involve a screening condition.
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72.80.Ng Disordered solids
84.32.Dd Connectors, relays, and switches

Redistribution of Cr during annealing of 80Se‐implanted GaAs

C. A. Evans, V. R. Deline, T. W. Sigmon, and A. Lidow

Appl. Phys. Lett. 35, 291 (1979); http://dx.doi.org/10.1063/1.91075 (3 pages) | Cited 35 times

Online Publication Date: 7 August 2008

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Cr in‐depth distributions have been measured in Se‐ion‐implanted GaAs as a function of postimplant annealing using secondary‐ion mass spectrometry (SIMS). Analysis shows that Cr redistributes into regions of residual damage following 800 °C annealing. As the damage anneals at higher temperatures, however, the Cr tends toward the GaAs surface. This phenomenon offers a plausible explanation of the discrepancies between the observed electrical and chemical distributions of ion‐implanted Se.
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61.72.U- Doping and impurity implantation
66.30.-h Diffusion in solids
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Observation of in situ annealing in hot ion‐implantation of nitrogen into AlxGa1−xAs (x=0.53)

Yunosuke Makita, Hidetoshi Nojiri, Toshio Tsurushima, Hisao Tanoue, and Jun‐ichi Shimada

Appl. Phys. Lett. 35, 293 (1979); http://dx.doi.org/10.1063/1.91076 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Photoluminescence measurements were carried out for indirect band‐gap Al0.53Ga0.47As crystals in which nitrogen ions were implanted at various elevated temperatures. It was found that samples implanted at temperatures higher than 525 °C exhibit characteristic emission bands associated with the nitrogen isoelectronic trap without any annealing treatments. This observation apparently shows that the substitutional procedure takes place simultaneously during implantation. We have also found that the substitutional mechanism is closely related with the formation of arsenic vacancies through which implanted atoms are located to the host arsenic sites.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Collective acceleration of carbon ions to 170 MeV

W. W. Destler, R. F. Hoeberling, H. Kim, and W. H. Bostick

Appl. Phys. Lett. 35, 296 (1979); http://dx.doi.org/10.1063/1.91077 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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The collective acceleration of carbon ions to a peak energy in the range 170–200 MeV has been achieved using a 6‐MeV 190‐kA 100‐ns electron beam pulse generated by the Pulserad 1590 facility at Kirtland Air Force Base. Accelerated ions were detected using nuclear activation techniques.
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52.27.Ny Relativistic plasmas
52.40.Mj Particle beam interactions in plasmas
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.80.Vp Discharge in vacuum
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