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15 Aug 1979

Volume 35, Issue 4, pp. 301-355


Energy transfer between 5d electronic states of trivalent rare‐earth ions

K. H. Yang and J. A. DeLuca

Appl. Phys. Lett. 35, 301 (1979); http://dx.doi.org/10.1063/1.91116 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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We have observed 5d‐to‐5d energy transfer from trivalent Tm to Nd in YF3 and LuF3 and Nd to Ce in YF3. In a YF3 : 5 mol% Tm : 1 mol% Nd sample, the probability of energy transfer from Tm3+ to Nd3+ was determined to be 0.94. The 5d‐to‐5d energy transfer has the possibility of broadening the optical pumping bands of the LiYF4 : Ce3+ laser and other laser systems involving the 5d14f n−1 to 4f n transition of trivalent rare‐earth doped fluorides.
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78.55.Hx Other solid inorganic materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Pulse‐shaped dependence of backscattered light from a KrF laser‐produced plasma

A. Endoh, S. Watanabe, K. Miyazaki, T. Sato, and H. Kashiwagi

Appl. Phys. Lett. 35, 302 (1979); http://dx.doi.org/10.1063/1.91117 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Aluminum and carbon targets have been irradiated in vacuum using an uv‐preionized KrF amplification system delivering up to 0.87 J in a 30‐nsec pulse. A pulse‐shaping technique has been employed to study the laser‐plasma interaction at the irradiance level 1×1010 W/cm2. Energy reflectivities and backscattered pulse modifications have been measured for three typical laser pulse shapes. A typical pulse having two distinctive peaks with a 30‐nsec interval were reflected from the plasma with its second peak strongly reduced.
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42.25.Fx Diffraction and scattering
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma

Correlation between pulse shape and gain of a CO2 TEA laser

M. Neve de Mevergnies

Appl. Phys. Lett. 35, 305 (1979); http://dx.doi.org/10.1063/1.91118 (2 pages)

Online Publication Date: 7 August 2008

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The laser pulse width and delay has been measured for a number of selected P‐ and R‐branch lines of the [00 °1‐10 °0] and [00 °1‐02 °0] transitions. It is concluded that the pulse width varies exponentially, and the pulse delay linearly, with the inverse of the gain of the selected laser line.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Visualization of the grain‐boundary potential barriers of PTC‐type BaTiO3 ceramics by cathodoluminescence in an electron‐probe microanalyzer

H. Ihrig and M. Klerk

Appl. Phys. Lett. 35, 307 (1979); http://dx.doi.org/10.1063/1.91119 (3 pages) | Cited 37 times

Online Publication Date: 7 August 2008

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In PTC‐type BaTiO3 ceramics the grain‐boundary potential barriers can easily be made visible by means of cathodoluminescence in an electron‐probe microanalyzer without having a voltage applied. The visualization can be explained in the context of our finding that the intensity of the cathodoluminescence radiation depends sensitively on the number of charge carriers present in the conduction band. Thus, in PTC‐type BaTiO3 ceramics, but not in undoped or reduced materials, the deficiency of conduction electrons in the depletion layers at the grain boundaries causes a blackening of the grain‐boundary regions. The blackening of the grain boundaries of our PTC ceramics also appears below the Curie point, thus demonstrating the existence of grain‐boundary barriers in this temperature range.
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78.60.Hk Cathodoluminescence, ionoluminescence
84.32.-y Passive circuit components
85.30.Hi Surface barrier, boundary, and point contact devices
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)

Air breakdown by pulsed‐laser radiation in the 2.7‐ and 3.8‐μm region

M. J. Soileau

Appl. Phys. Lett. 35, 309 (1979); http://dx.doi.org/10.1063/1.91120 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The breakdown thresholds of unfiltered laboratory air were measured in the 3.8‐ and 2.7‐μm regions. The breakdown threshold at 10.6 μm was also measured under identical experimental conditions in order to provide a correlation with previous work. Measurements at different focal‐spot radii were used to establish an empirical scaling law for the focal‐spot radius dependence of the breakdown thresholds. This scaling law was then used to reduce all the data to a common focal‐spot radius. The results indicate that the air breakdown threshold has a λ−2 dependence in the 2.7–10.6‐μm range.
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42.68.Wt Remote sensing; LIDAR and adaptive systems
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

700‐h continuous room‐temperature operation of AlxGa1−xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis

Appl. Phys. Lett. 35, 311 (1979); http://dx.doi.org/10.1063/1.91121 (4 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Constant‐current continuous room‐temperature (∼26 °C) operating times greater than 700 h have been achieved for AlxGa1−xAs‐GaAs multiple‐quantum‐well heterostructure injection lasers grown by metalorganic chemical vapor deposition. One device has shown essentially no degradation in its output characteristics during this time.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Heating‐effect minimization in dye lasers

Kenneth Lee Matheson and James M. Thorne

Appl. Phys. Lett. 35, 314 (1979); http://dx.doi.org/10.1063/1.91122 (4 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Optical pumping of dye lasers deposits heat nonuniformly in the active medium. Because the refractive index of a liquid or gas is a function of temperature, gradients are created which refract the laser beam. This effect is sometimes serious enough to quench laser action. In this paper, we evaluate the effects caused by optical pumping with a coaxial flashlamp and suggest ultraviolet absorbers and wavelength shifters as materials for minimizing the problem.
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42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.55.Kz Solid organic materials

Hollow‐cathode excitation of ion laser transitions in noble‐gas mixtures

R. Solanki, E. L. Latush, F D. C. Gerstenberger, W. M. Fairbank, and G.J. Collins

Appl. Phys. Lett. 35, 317 (1979); http://dx.doi.org/10.1063/1.91123 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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Excitation of laser transitions in He‐Kr, He‐Ar, Ne‐Xe, and He‐Ne‐Xe mixtures was investigated in hollow‐cathode discharges. The dominant excitation mechanism of the noble‐gas ions was found to be collisions of the second kind between the ground‐state noble‐gas ions and helium or neon metastables. Based on gain and absorption spectroscopy measurements, the cross section for this mechanism was estimated to be ⩾10−14 cm2. New laser transitions in noble‐gas and copper ions are also reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Edge‐bonded surface‐acoustic‐wave transducer array

H. C. Tuan, G. S. Kino, B. T. Khuri‐Yakub, and A. R. Selfridge

Appl. Phys. Lett. 35, 320 (1979); http://dx.doi.org/10.1063/1.91106 (2 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A new type of transducer array has been designed and built for imaging surface defects in metals such as aluminum. The array is formed by edge bonding a piece of piezoelectric material to a substrate of the same material as the sample to be tested. The individual elements in the array are formed by photolithography, and each element acts as an edge‐bonded surface wave transducer. The array has 32 elements resonant at a center frequency of 3.1 MHz with a round trip 6‐dB bandwidth of 65%. Each element has a two‐way insertion loss of 14 dB and a ± ° 3‐dB acceptance angle. Because of the good acoustic impedance match between the piezoelectric material and the substrate material, the array does not need to be slotted. Electrical isolation between individual elements is achieved by depositing ground strips between the elements.
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43.38.Ar Transducing principles, materials, and structures: general
43.38.Fx Piezoelectric and ferroelectric transducers
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

On the thermoelectric amplification of sound in semiconductors

M. A. Tenan, A. Marotta, and L. C. M. Miranda

Appl. Phys. Lett. 35, 321 (1979); http://dx.doi.org/10.1063/1.91107 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The possibility of sound amplification in a semiconductor subjected to an external temperature gradient is discussed. It is shown that for kl≪1 and short‐circuited samples, the temperature gradient threshold for amplification varies inversely proportional to (kl)2.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

Efficient conversion of surface acoustic waves in shallow gratings to bulk plate modes

John Melngailis, H. A. Haus, and A. Lattes

Appl. Phys. Lett. 35, 324 (1979); http://dx.doi.org/10.1063/1.91108 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Nearly 100% conversion of surface acoustic waves to bulk plate modes via gratings has been observed and characterized. The gratings constructed on YZ LiNbO3 had 200 grooves of 20‐μm period and 0.47‐μm depth. Surface acoustic waves with wavelengths near 20 μm were normally incident on the gratings. At selected frequencies, determined by a phase velocity matching condition, nearly the entire surface wave signal was converted to bulk plate modes. In an identical grating on the opposite crystal face the signal was converted back to a surface wave. This transmission of signal from front to back of a crystal occurred at selected narrow (∼0.1%) bandwidths and with a loss of less than 0.5 dB in some cases. A theory has been developed which can predict the resonant frequencies and the transmission coefficient. Possible low‐loss narrow band filter structures are considered.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
68.35.Ja Surface and interface dynamics and vibrations
43.20.Ks Standing waves, resonance, normal modes
62.90.+k Other topics in mechanical and acoustical properties of condensed matter (restricted to new topics in section 62)

Solar furnace annealing of amorphous Si layers

S. S. Lau, M. von Allmen, I. Golecki, M‐A. Nicolet, E. F. Kennedy, and W. F. Tseng

Appl. Phys. Lett. 35, 327 (1979); http://dx.doi.org/10.1063/1.91109 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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We demonstrate that a simple Al solar reflector can be used to induce solid‐phase epitaxy of amorphous Si layers obtained either by ion‐implantation or ion‐deposition techniques. The annealing can be accomplished in air and takes a few seconds for a 1‐cm2 sample area. For ion‐implanted samples, the regrown layers are defectfree on 〈100〉 substrates, and contain microtwins on 〈111〉 substrates. For deposited layers on 〈100〉 substrates the degree of epitaxy is not as good as that obtained by furnace annealing (550 followed by 950 °C annealing).
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Growth of dislocations during laser melting and solidification

J. Narayan and F. W. Young

Appl. Phys. Lett. 35, 330 (1979); http://dx.doi.org/10.1063/1.91110 (3 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube‐laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge‐ and screw‐type dislocations grew in 〈113〉 directions that were not normal to the crystal‐growth interface.
Show PACS
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Ionization coefficients of electrons and holes in InP

C. A. Armiento, S. H. Groves, and C. E. Hurwitz

Appl. Phys. Lett. 35, 333 (1979); http://dx.doi.org/10.1063/1.91111 (3 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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The ionization coefficients of electrons and holes in InP have been determined from photomultiplication measurements on abrupt‐junction low‐leakage np+ InP avalanche photodiodes. The ionization rate of holes ( β) was found to be greater than that for electrons (α), the ratio varying with peak electric field Em from β/α=3.8 at Em=4.85×105 V cm−1 to β/α=2.7 at Em=6.37×105 V cm−1.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Photoluminescent characterization of GaAs solar cells

G. D. Pettit, J. M. Woodall, and H. J. Hovel

Appl. Phys. Lett. 35, 335 (1979); http://dx.doi.org/10.1063/1.91112 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Photoluminescence excitation measurements are shown to accurately determine the spectral response of Ga1−xAlxAs‐GaAs heterojunction solar cells. The technique is applicable to as‐grown structures prior to processing into final devices and can also be used to study postgrowth techniques designed to enhance the spectral response of such devices. The measurements indicate that some surface recombination passivation is obtained with anodization.
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78.40.Fy Semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Nonalloyed Ohmic contacts to n‐GaAs by pulse‐electron‐beam‐annealed selenium implants

R. L. Mozzi, W. Fabian, and F. J. Piekarski

Appl. Phys. Lett. 35, 337 (1979); http://dx.doi.org/10.1063/1.91113 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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Nonalloyed Ohmic contacts to n‐GaAs have been formed by vapor deposition of TiPtAu on pulse‐electron‐beam‐annealed Se‐implanted surfaces. Peak carrier concentrations were about 1.2×1019/cm3, yielding a specific contact resistance rc≲6×10−7 Ω cm2.
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73.40.Cg Contact resistance, contact potential
61.72.U- Doping and impurity implantation
79.20.Kz Other electron-impact emission phenomena
66.30.J- Diffusion of impurities

Optical derivative measurements of the electrical parameters for a junction diode

Thomas L. Paoli

Appl. Phys. Lett. 35, 339 (1979); http://dx.doi.org/10.1063/1.91114 (3 pages)

Online Publication Date: 7 August 2008

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A derivative technique is presented to determine optically the electrical parameters of a p‐n junction. The method relies upon the saturation produced in the optically generated current delivered to a load resistor as a result of increases in either the average optical power incident on the p‐n junction or the dc circuit voltage. Analysis of the dc equivalent circuit shows that the degree of saturation measured by a derivative of the load current allows determination of the junction’s exponential parameter, saturation current, and shunt resistance. The technique is illustrated by application to a silicon avalanche photodiode.
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72.40.+w Photoconduction and photovoltaic effects
85.30.Kk Junction diodes

The effect of substrate orientation on the liquid‐solid distribution coefficients for GaxIn1−xAs in the temperature range 600–700 °C

T. P. Pearsall, M. Quillec, and M. A. Pollack

Appl. Phys. Lett. 35, 342 (1979); http://dx.doi.org/10.1063/1.91115 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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We demonstrate that the liquid‐solid distribution coefficients depend on the substrate orientation in the growth from the liquid phase of GaxIn1−xAs. The distribution coefficient of Ga for growth on the (100) face was found to be larger than that for growth on the (111B) face over the entire temperature range investigated.
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68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Deleterious effects of an oxidizing drive‐in ambient on implanted arsenic emitters in 〈111〉 silicon

L. C. Parrillo and B. L. Morris

Appl. Phys. Lett. 35, 345 (1979); http://dx.doi.org/10.1063/1.91124 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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In 〈111〉‐oriented silicon, annealing high‐dose (∼1×1016/cm2) implanted layers of arsenic in an ambient containing more than a few tenths of 1% oxygen in nitrogen results in dislocation networks that extend well beyond the implanted regions. As the oxygen concentration in the drive‐in step is increased, the lateral extent and density of the dislocation loops increases. Electrically, the extended dislocation loops cause leaky emitter‐base junctions and also emitter‐to‐collector leakage of the punch‐through type. By controlling the drive‐in ambient to 0.1% oxygen in nitrogen, we have prevented the formation of these extended dislocations for arsenic doses up to 2×1016/cm2.
Show PACS
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.U- Doping and impurity implantation
85.30.Pq Bipolar transistors
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Anomalous electrical and optical characteristics of GaAs/AlxGa1−xAs heterostructure materials

B. Wakefield, J. L. Stevenson, R. M. Redstall, and T. Ambridge

Appl. Phys. Lett. 35, 347 (1979); http://dx.doi.org/10.1063/1.91125 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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GaAs/AlxGa1−xAs double‐heterostructure layers grown by conventional LPE have been examined by three separate electrical and optical techniques. Some material has exhibited characteristics not previously detected in epilayers grown singly. Our central observation is that Ge‐doped passive and active layers can have n‐type conductivity within the heterostructure.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Hk Cathodoluminescence, ionoluminescence
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
72.80.Ey III-V and II-VI semiconductors

Photoconductive imaging using hydrogenated amorphous silicon film

Y. Imamura, S. Ataka, Y. Takasaki, C. Kusano, T. Hirai, and E. Maruyama

Appl. Phys. Lett. 35, 349 (1979); http://dx.doi.org/10.1063/1.91126 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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Highly resistive hydrogenated amorphous‐silicon film has been fabricated and examined as blocking‐type photoconductive target of a vidicon‐type image pickup tube. The results indicate that this novel silicon vidicon has many advantages over conventional ones.
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72.40.+w Photoconduction and photovoltaic effects
61.43.Fs Glasses
61.43.-j Disordered solids
81.15.Cd Deposition by sputtering
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Magnetostatic surface wave propagation on a periodic YIG film layer

N. S. Chang and Y. Matsuo

Appl. Phys. Lett. 35, 352 (1979); http://dx.doi.org/10.1063/1.91127 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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The filter characteristics of a magnetostatic surface wave propagating in a layered YIG film corrugated on one layer and noncorrugated on the other are described. The effect of the saturation magnetization of a noncorrugated layer on the filter is analytically evaluated by solving the exact dispersion relation. Also, the magnetic loss effect on the filter is considered. It is found that the Q value of the filter in our new model is generally twice as large as that of contemporary periodic YIG film filters.
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84.30.Vn Filters
85.70.-w Magnetic devices
85.70.Ge Ferrite and garnet devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
FREE

Erratum: Ultra‐high‐gain laser‐produced plasma laser in xenon using periodic pumping

W. T. Silfvast, L. H. Szeto, and O. R. Wood II

Appl. Phys. Lett. 35, 355 (1979); http://dx.doi.org/10.1063/1.91267 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
99.10.Cd Errata
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