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1 Sep 1979

Volume 35, Issue 5, pp. 359-430

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Photoluminescence of ArS, KrS, and XeS in rare‐gas matrices

R. V. Taylor and W. C. Walker

Appl. Phys. Lett. 35, 359 (1979); http://dx.doi.org/10.1063/1.91149 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The photoluminescence emission spectra and radiative lifetimes of the rare‐gas sulfides ArS, KrS, and XeS in solid rare‐gas matrices are presented. The emission is in the near infrared, and the lifetimes are of the order of several μs. Our emission spectra are compared with recent gas‐phase emission spectra.
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33.50.Dq Fluorescence and phosphorescence spectra
33.20.Kf Visible spectra
33.70.Fd Absolute and relative line and band intensities
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Photoacoustic spectroscopy of chrysotile asbestos using a cw HF laser

J.‐P. Monchalin, J.‐M. Gagné, J.‐L. Parpal, and L. Bertrand

Appl. Phys. Lett. 35, 360 (1979); http://dx.doi.org/10.1063/1.91150 (4 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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We have investigated the feasibility of using a cw HF laser to detect chrysotile asbestos fibers by a photoacoustic technique. We report the photoacoustic spectrum of Canadian chrysotile around its OH absorption band between 3400 and 3800 cm−1. We have verified that the absorption depends strongly on the relative orientation of the laser polarization and the fiber axis, a property which will be invaluable in a detection scheme.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

The orotron–A free‐electron laser using the Smith‐Purcell effect

Richard P. Leavitt, Donald E. Wortman, and Clyde A. Morrison

Appl. Phys. Lett. 35, 363 (1979); http://dx.doi.org/10.1063/1.91151 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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A theory of operation of the orotron is described in which the electromagnetic field present in the open resonator of the device bunches the electron beam; this bunching leads to coherent oscillation. Theoretical results at 75 GHz are discussed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Dj Gratings
03.50.De Classical electromagnetism, Maxwell equations
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Analysis on the steady‐state amplification of ArF and KrF discharge lasers

Shuntaro Watanabe, Akira Obara, Takuzo Sato, Hiroshi Kashiwagi, and Akira Endoh

Appl. Phys. Lett. 35, 365 (1979); http://dx.doi.org/10.1063/1.91152 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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The saturation behavior of the steady‐state amplification of discharge‐pumped ArF and KrF lasers have been analyzed by numerical calculation taking into account absorption, spontaneous decay, and pumping. This analysis predicts the noticeable pulse‐width broadening due to amplification in good agreement with experiments. The small‐signal‐gain g0 and absorption coefficients a were determined simultaneously by the best fits of experimental saturation curves to numerically calculated ones with the results of g0=3.5%/cm and a=0.2%/cm for the ArF laser and g0=5.0%/cm and a=0.4%/cm for the KrF laser under the investigated conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Subsurface structures of solids by scanning photoacoustic microscopy

Y. H. Wong, R. L. Thomas, and J. J. Pouch

Appl. Phys. Lett. 35, 368 (1979); http://dx.doi.org/10.1063/1.91153 (2 pages) | Cited 36 times

Online Publication Date: 7 August 2008

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Definitive experimental evidence is given for the nondestructive detection of subsurface structures of solids by the technique of scanning photoacoustic microscopy (SPAM). In the case of the ceramic materials studied, the thickness of the surface layer probed is dictated by the thermal diffusion length δth which scales as f−1/2. For a chopping frequency f∼100 Hz, δth is on the order of 100 μm. This demonstrates the advantages of SPAM over conventional microscopy in investigating structures beneath the surface.
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68.37.-d Microscopy of surfaces, interfaces, and thin films

Optical breakdown in NaCl and KCl from 0.53 to 10.6 μm

M. J. Soileau and Michael Bass

Appl. Phys. Lett. 35, 370 (1979); http://dx.doi.org/10.1063/1.91154 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Directly comparable values of optical‐breakdown fields in NaCl and KCl were obtained at several wavelengths by properly scaling the data according to measured dependencies on the laser‐beam focal spot radius. The breakdown field for each material showed no significant variation with laser wavelength over the range 0.53–10.6 μm. However, the ratio of the fields for even the most breakdown‐resistant NaCl and KCl samples changed with the spot radius in a manner suggesting that an extrinsic property dominates optical breakdown in these materials.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.70.-a Optical materials
77.22.Jp Dielectric breakdown and space-charge effects

Suppression of side lobes in the far field of AlGaAs DH stripe lasers by a Te facet coating

Dieter Kerps

Appl. Phys. Lett. 35, 372 (1979); http://dx.doi.org/10.1063/1.91155 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Side lobes observed in the far‐field distribution parallel to the junction plane of DH AlGaAs stripe‐geometry lasers can be suppressed by a self‐aligned facet masking process. A hole, burnt into a Te coating by the laser emission, allows only the main lobe emission to pass. The result supports the attribution of side lobes to refraction tails in the near field typical of a negative refractive index step wave guide as discussed in a previous paper [see R. W. Engelmann, D. Kerps, and F. Nunes, IEEE Quantum Electron. (to be published)].
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Ci Filters, zone plates, and polarizers

Thermal emissivity of selective surfaces—New lower limits

D. M. Trotter and A. J. Sievers

Appl. Phys. Lett. 35, 374 (1979); http://dx.doi.org/10.1063/1.91156 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Numerical calculations of the thermal emissivity ϵ of spectrally selective surfaces consisting of absorbing films on reflective metal substrates are reported. A physically realizable form for the absorption coefficient of the film α (ω), and a refractive index n (ω) derived from α (ω) via a Kramers‐Kronig relation were used to obtain new lower limits for ϵ.
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42.79.-e Optical elements, devices, and systems
42.25.Bs Wave propagation, transmission and absorption
03.50.De Classical electromagnetism, Maxwell equations
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Polarization‐rotation and thermal‐motion studies via resonant degenerate four‐wave mixing

D. G. Steel, R. C. Lind, J. F. Lam, and C. R. Giuliano

Appl. Phys. Lett. 35, 376 (1979); http://dx.doi.org/10.1063/1.91130 (4 pages) | Cited 23 times

Online Publication Date: 7 August 2008

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We report experimental observation of polarization rotation in resonant degenerate four‐wave mixing (DFWM) arising from the third‐order coupling of the electric fields. This effect allows investigation of molecular motion and its effect on the efficiency of the DFWM. By controlling the pulse width and therefore γ=T0/τp (where T0≡λ/vth) we show quantitative agreement with a third‐order density matrix perturbation calculation. In particular, using a CO2 laser at 10.6 μm and SF6 as the nonlinear medium, we show that for γ≫1 (stationary limit) we see no molecular motion and for γ≈1, we see a significant ’’washout’’ of one third–order polarization.
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42.65.-k Nonlinear optics
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Theory of bistability in nonlinear distributed feedback structures

Herbert G. Winful, J. H. Marburger, and E. Garmire

Appl. Phys. Lett. 35, 379 (1979); http://dx.doi.org/10.1063/1.91131 (3 pages) | Cited 229 times

Online Publication Date: 7 August 2008

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We show that optical bistability can occur in a distributed feedback structure with an intensity‐dependent refractive index. Analytical expressions for the transmissivity are obtained and a comparison with Fabry‐Perot‐type devices is presented.
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42.55.Ah General laser theory
07.60.Ly Interferometers

Detection of far‐infrared radiation using Rydberg atoms

Theodore W. Ducas, William P. Spencer, A. Ganesh Vaidyanathan, William H. Hamilton, and Daniel Kleppner

Appl. Phys. Lett. 35, 382 (1979); http://dx.doi.org/10.1063/1.91132 (3 pages) | Cited 27 times

Online Publication Date: 7 August 2008

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A new method for detecting far‐infrared radiation is demonstrated. The far‐infrared radiation induces transitions between highly excited (Rydberg) levels of Na. These transitions can be detected by selective field ionization. The method is capable of providing narrow‐band detection with essentially continuous tuning throughout the infrared and far‐infrared range. We have detected radiation from a laser source at 496 and 118 μ with a 1‐MHz bandwidth. A noise equivalent power of 5×10−15 W/Hz1/2 was measured at 496 μ.
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32.90.+a Other topics in atomic properties and interactions of atoms with photons (restricted to new topics in section 32)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Acoustic microscopy of interior planes

V. B. Jipson

Appl. Phys. Lett. 35, 385 (1979); http://dx.doi.org/10.1063/1.91133 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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It has been recently demonstrated that the acoustic microscope can be used to image planes relatively deep beneath the surface with a lateral resolution of approximately one acoustic wavelength. In order to minimize the aberration effects caused by refraction at the liquid‐solid interface, liquid gallium is substituted for water as the coupling liquid, and mode conversion to shear waves within the solid is exploited. The imaging properties of this system are discussed from a geometrical viewpoint and some experimental results are presented.
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43.20.Fn Scattering of acoustic waves
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

A SAW/CCD programmable matched filter

R. W. Ralston, D. L. Smythe, and E. Stern

Appl. Phys. Lett. 35, 388 (1979); http://dx.doi.org/10.1063/1.91134 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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A charge‐coupled device (CCD) has been integrated with a surface‐acoustic‐wave (SAW) piezoelectric delay line in a hybrid gap‐coupled structure to produce an electronically programmable analog matched filter in which the filter function is controlled by the charge pattern clocked into the CCD. This device allows analog‐analog correlation of SAW input signals of ≲40‐MHz bandwidth and ≲3.5‐μs duration. Programming time is 6 ms at a 100‐kHz clock rate, and the reference holding time is 1 s for a 3‐dB degradation of the correlation peak. Operation as a matched filter for a 3.25‐μs‐long 13‐bit Barker‐encoded signal yields a peak correlation level of −41 dB m.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices

Interferometry of a gas‐puff z‐pinch plasma

J. Shiloh, A. Fisher, and E. Bar‐Avraham

Appl. Phys. Lett. 35, 390 (1979); http://dx.doi.org/10.1063/1.91135 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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A nitrogen laser interferometer is utilized to study the density profile of a gas‐puff z‐pinch plasma during the implosion stage and the final collapse. The density profile and the plasma stability as a function of the different parameters are reported.
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52.55.Ez Theta pinch
52.50.Dg Plasma sources
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Magnetic field control of reactive plasma etching

V. J. Minkiewicz, M. Chen, J. W. Coburn, B. N. Chapma, and F K. Lee

Appl. Phys. Lett. 35, 393 (1979); http://dx.doi.org/10.1063/1.91136 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The application of a magnetic field to control the spatial distribution of chemical species in reactive plasma etching produces a situation in which either etching or deposition can occur. In a low‐voltage hot‐filament triode configuration in which the plasma is confined by an externally applied magnetic field, Si samples are subjected to a CF4 plasma. Etching or deposition of a cross‐linked fluorocarbon polymer can occur, depending on the position of the sample with respect to the core of the discharge. These results are generally applicable to all reactive plasma‐etching reactors.
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52.40.Hf Plasma-material interactions; boundary layer effects
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.90.+w Other topics in magnetic properties and materials (restricted to new topics in section 75)

400‐Å high aspect‐ratio lines produced in poylmethyl methacrylate (PMMA) by ion‐beam exposure

L. Karapiperis and C. A. Lee

Appl. Phys. Lett. 35, 395 (1979); http://dx.doi.org/10.1063/1.91137 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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We report preliminary results on the fabrication of 400‐ and 2600‐Å deep lines in polymethyl methacrylate (PMMA) by means of H+ exposure through a holographically produced fine conformal gold mask.
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61.80.Jh Ion radiation effects
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Photothermal effect at TiO2 electrodes in a photoelectrochemical cell

Franco Decker, J. F. Julião, and M. Abramovich

Appl. Phys. Lett. 35, 397 (1979); http://dx.doi.org/10.1063/1.91138 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Anomalous photoresponse of n‐TiO2 in a photoelectrochemical cell was previously observed to be induced by light of energy lower than the bandgap. This photoresponse was attributed to surface states at the TiO2‐electrolyte interface. We studied this effect at stationary and rotating disk TiO2 electrodes and we show that the anomalous photoresponse is a thermal effect due to heating of the crystal surface by the illumination.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ga Transition-metal compounds
82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis

Evidence of room‐temperature sintering in aluminum contacts in vacuum and in oxygen

R. S. Timsit

Appl. Phys. Lett. 35, 400 (1979); http://dx.doi.org/10.1063/1.91139 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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It is found that the area of metallic contact between two aluminum surfaces grows at room temperature both in ultrahigh vacuum and in an oxygen atmosphere. In vacuum, the growth rate is consistent with the rates predicted from sintering theory; the experimental evidence suggests that sintering is driven by capillary forces and controlled largely by dislocation creep. In oxygen, growth is slower but can be understood qualitatively also in terms of creep‐controlled sintering.
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66.30.-h Diffusion in solids
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Pseudoalloy behavior at interfaces; AgAu

G. K. Wertheim, C. W. Bates, J. H. Wernick, and D. N. E. Buchanan

Appl. Phys. Lett. 35, 403 (1979); http://dx.doi.org/10.1063/1.91140 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Analysis of mixed metallic layers formed by grain‐boundary diffusion shows that atoms at the interface have properties resembling those of a solid solution. Generalization of this result suggests that the sharpness of an interface cannot be defined by electronic properties to better than two atomic layers.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Dk Alloys

Differences in sodium transport in SiO2 films caused by ion and neutral‐particle bombardment

Daniel V. McCaughan, C. W. White, R. A. Kushner, and D. L. Simms

Appl. Phys. Lett. 35, 405 (1979); http://dx.doi.org/10.1063/1.91141 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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The transport of impurity atoms from the surface to the SiO2/Si interface of SiO2 films on silicon subjected to ion and neutral‐particle bombardment has been found to depend critically on the charge state of the incident projectile. SiO2 films on silicon, intentionally contaminated with 22Na, have been bombarded by low‐energy neutral N02 and Ar0, by N+2 and Ar+ ions, and by these ions with concurrent thermal electron flooding of the insulator surface. Neutral‐particle bombardment in the energy range 500–2000 eV causes no measurable sodium transport to the SiO2/Si interface. Ion bombardment at the same energy and dose causes migration of much of the sodium away from the SiO2 surface to the interface. Ion bombardment in the presence of simultaneous electron flooding is an intermediate case, causing two orders of magnitude less sodium transport than ions alone, but resulting in at least two orders of magnitude more sodium transport than neutral‐particle bombardment. These results suggest that neutral‐atom sputtering or neutral‐atom beam methods may be preferred techniques for insulator profile analysis to avoid problems associated with impurity transport, and neutral beams may be preferable to ion beams for sputter etching.
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68.60.-p Physical properties of thin films, nonelectronic
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects

Extension of a theorem used in the investigation of p‐n junctions with the scanning electron microscope to arbitrary geometries and arbitrarily inhomogeneous material

Oldwig von Roos

Appl. Phys. Lett. 35, 408 (1979); http://dx.doi.org/10.1063/1.91129 (2 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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It is shown that the relationship limn→S ∂Isc/ ∂n= (s/D) Isc connecting the normal derivative of the short circuit Isc generated by an electron or ion beam in a P‐N junction with the surface recombination velocity s and the diffusion constant D is valid for arbitrary junction geometries, arbitrary doping profiles, and arbitrary distributions of recombination centers, provided that (1) low‐level injection prevails and (2) the radius of the beam‐semiconductor interaction volume is small compared to the local diffusion length. It thus becomes possible to study the surface recombination velocity of the front surface of a highly nonuniformly doped shallow junction representative of, for instance, a solar cell by means of an ion beam.
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72.20.-i Conductivity phenomena in semiconductors and insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
84.60.Jt Photoelectric conversion

Diffusion and p‐type conduction of magnesium impurities in germanium

L. T. Ho

Appl. Phys. Lett. 35, 409 (1979); http://dx.doi.org/10.1063/1.91142 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Magnesium has been introduced into germanium by the diffusion technique. After heat treatment, the room‐temperature carrier concentration of the sample is of the order of 1015 cm−3. Conversion of the sample conductivity from n type to p type indicates that magnesium behaves like a substitutional double acceptor in germanium. A diffusion profile for magnesium impurities in germanium is presented.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.-i Conductivity phenomena in semiconductors and insulators

Comparison of dopant incorporation into polycrystalline and monocrystalline silicon

J. R. Monkowski, J. Bloem, L. J. Giling, and M. W. M. Graef

Appl. Phys. Lett. 35, 410 (1979); http://dx.doi.org/10.1063/1.91143 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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The capacitance‐voltage (C‐V) technique was used to compare the dopant distribution in polycrystalline silicon to that in monocrystalline silicon grown under the same conditions via chemical vapor deposition. Over a doping range extending from approximately 1015 to 1019 cm−3, the polycrystalline and monocrystalline material yielded identical results. These results, in conjunction with those of other investigations, indicate that the concentration and uniformity of dopant in both n‐ and p‐type polycrystalline silicon match those in monocrystalline silicon.
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61.72.U- Doping and impurity implantation

Influence of spin density in implanted Si layers on pulsed‐laser annealing

K. Murakami, E. Ikawa, K. Gamo, S. Namba, Y. Akasaka, and Y. Masuda

Appl. Phys. Lett. 35, 413 (1979); http://dx.doi.org/10.1063/1.91144 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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In order to clarify an influence of the spin density or the optical absorption coefficient on the pulsed‐laser annealing effect, we have performed systematically ion‐backscattering and channeling analysis and ESR measurement as a funcion of spin densities in ion‐implanted Si samples. It was found that the spin density can yield a good criterion for predicting the annealing effect because the spin density is strongly correlated with the optical absorption coefficient. From spin‐density measurements, the initial absorption coefficient of the as‐implanted Si layer was found to be a very important factor which dominates the effect of laser annealing even if there is a nonlinear absorption mechanism.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Temperature dependence of the current‐voltage characteristics of silicon MIS solar cells

J. Shewchun, R. Singh, D. Burk, and F. Scholz

Appl. Phys. Lett. 35, 416 (1979); http://dx.doi.org/10.1063/1.91145 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Measurements on the dark I‐V characteristics of Al‐SiOx‐ (p‐type) Si solar cells as a function of temperature have been used to elucidate one of the possible current conduction mechanisms in MIS solar cells. A good fit is obtained by using the diffusion current mechanism as described previously in our theory of MIS solar cells. There is little evidence in the data on our devices to support the thermionic emission model which is the alternate mode of operation proposed by other investigators.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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