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1 Sep 1979

Volume 35, Issue 5, pp. 359-430

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Laser‐induced metal‐to‐semiconductor phase transition in mixed Al‐Sb films

R. Andrew, M. Ledezma, M. Lovato, M. Wautelet, and L. D. Laude

Appl. Phys. Lett. 35, 418 (1979); http://dx.doi.org/10.1063/1.91146 (3 pages) | Cited 19 times

Online Publication Date: 7 August 2008

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Metallic films consisting of overlapping polycrystalline layers of, alternatively, Al or Sb atoms in overall equal proportions are irradiated at 300 °K with 80‐mJ/cm2 microsecond dye laser pulses of 2‐eV photon energy. Using transmission electron microscopy, electron diffraction, optical transmission, and conductivity measurements, the presence of semiconducting AlSb is fully identified in systematically all the irradiated films after one single pulse, giving unambiguous evidence for a phase transition between the layered fcc‐rhomboedric metallic structure and the blende structure of AlSb.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Tv Optical and dielectric properties related to treatment conditions

Current conduction in Cr‐MIS solar cells on single‐crystal p‐silicon

K. Rajkanan and W. A. Anderson

Appl. Phys. Lett. 35, 421 (1979); http://dx.doi.org/10.1063/1.91147 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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New information has been obtained about the current conduction in Cr‐MIS solar cells by studying their current‐voltage relationship over a wide range of temperatures. It is demonstrated that majority‐carrier tunneling over the combined barrier due to the interfacial oxide and the space‐charge region dominates the I‐V characteristics at temperatures below 250 °K for Cr‐SiOx‐ (p‐Si) solar cells. Insight about the shunt resistance and back‐contact barrier is also obtained by plotting the activation energy versus applied bias. Majority carriers tunneling via interface states control the characteristics at higher temperatures for these devices, made on 0.4‐Ω cm p‐silicon.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects

A Seebeck effect position sensor for CO2 laser beam alignment

R. B. Hammond and C. R. Gruhn

Appl. Phys. Lett. 35, 423 (1979); http://dx.doi.org/10.1063/1.91148 (4 pages)

Online Publication Date: 7 August 2008

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A new concept for a laser position sensor is presented. The device utilizes the Seebeck effect in semiconductors. Results using a Si detector show position linearity and energy linearity of the device signal. A theoretical model explaining the operation of the device is outlined. Applications to pulsed laser beam alignment are discussed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.80.Fi Thermoelectric devices
72.20.Pa Thermoelectric and thermomagnetic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Efficient generation of low‐energy positrons

Allen P. Mills

Appl. Phys. Lett. 35, 427 (1979); http://dx.doi.org/10.1063/1.91128 (3 pages) | Cited 54 times

Online Publication Date: 7 August 2008

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Positrons with a nearly thermal‐energy distribution can be generated by moderating the beta‐decay spectrum of a radioactive β+ source. The efficiency ϵ of this process is improved substantially by using a clean single‐crystal Cu moderator which has been activated by a one‐third monolayer of S. When combined with a low self‐absorption 58Co β+ source, this moderator has an efficiency (ϵ=10−3) which is within a factor of ∼6 of what one would expect based on what is presently known about positron diffusion, slow‐positron emission, and the stopping of β particles.
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78.70.Bj Positron annihilation
36.10.Dr Positronium
71.60.+z Positron states
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Erratum: Diffusion of Cd acceptors in InP and a diffusion theory for III‐V compounds

P. K. Tien and B. I. Miller

Appl. Phys. Lett. 35, 430 (1979); http://dx.doi.org/10.1063/1.91268 (1 page) | Cited 1 time

Online Publication Date: 7 August 2008

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Abstract Unavailable
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81.40.Gh Other heat and thermomechanical treatments
82.20.-w Chemical kinetics and dynamics
85.60.Jb Light-emitting devices
85.30.Hi Surface barrier, boundary, and point contact devices
99.10.Cd Errata
FREE

Erratum: High critical currents in cold‐powder‐metallurgy‐processed superconducting Cu‐Nb‐Sn composites

R. Flükiger, S. Foner, E. J. McNiff, and B. B. Schwartz

Appl. Phys. Lett. 35, 430 (1979); http://dx.doi.org/10.1063/1.91269 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
99.10.Cd Errata
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