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15 Sep 1979

Volume 35, Issue 6, pp. 433-474


Anomalous infrared absorptance of aluminum under pulsed 10.6‐μm laser irradiation in vacuum

J. A. McKay and J. T. Schriempf

Appl. Phys. Lett. 35, 433 (1979); http://dx.doi.org/10.1063/1.91161 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Above a distinct threshold laser flux of 70‐MW/cm2 peak (for a pulse consisting of a 150‐ns spike and a 1.8‐μs tail), the calorimetrically measured effective absorptance of unpolished 3003 alloy aluminum increases abruptly to roughly 14%. While too high to be ascribed to ordinary metal infrared absorptance at any reasonable temperature, this value is typical of total‐energy thermal coupling in air with air plasma ignition. We propose that this absorptance is in fact due to the ignition of a plasma in metal vapor produced by thermally isolated metal defects, rather than to a metal‐dielectric transition.
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79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
71.30.+h Metal-insulator transitions and other electronic transitions

Variable‐temperature photoacoustic effect: Application to phase transition

C. Pichon, M. Le Liboux, D. Fournier, and A. C. Boccara

Appl. Phys. Lett. 35, 435 (1979); http://dx.doi.org/10.1063/1.91162 (3 pages) | Cited 41 times

Online Publication Date: 7 August 2008

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A low‐temperature‐adapted photoacoustic cell using an electret microphone and a MOSFET preamplifier is described. This cell can operate between 5 and 300 K in a gas‐flow cryostat. By way of illustration, it is used here to perform a new kind of photoacoustic measurement, i.e., to study the specific‐heat anomaly of various insulators in the neighborhood of magnetic phase transitions.
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64.60.-i General studies of phase transitions

Studies of an 80‐J KrF oscillator at excitation rates of 2–7 MW/cm3

G. C. Tisone, E. L. Patterson, and J. K. Rice

Appl. Phys. Lett. 35, 437 (1979); http://dx.doi.org/10.1063/1.91163 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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We have examined the performance of a 2‐liter KrF oscillator pumped by a high‐intensity electron beam. For input pump rates of 7 MW/cm3, up to 80 J of laser energy is extracted from the cavity in 50 ns with an efficiency (laser energy divided by deposited electron‐beam energy) of 11%. Values of the small‐signal‐gain length product g0L, the absorption length product αL, and the saturation intensity Is were determined to be 6–16, 0.3–0.6, and 1–10 MW/cm2, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Laser‐alloyed stripe‐geometry DH lasers

R. Salathé, G. Badertscher, W. Lüthy, F. K. Reinhart, and R. A. Logan

Appl. Phys. Lett. 35, 439 (1979); http://dx.doi.org/10.1063/1.91164 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Stripe‐geometry contacts have been produced by focusing a Q‐switched Nd : YAG laser with a cylindric lens on metallized (AlxGa1−xAs) DH lasers. The contact formation has been performed directly on the p‐type AlGaAs cladding layer without a protecting gas ambient. The laser diodes fabricated from this material exhibited low threshold currents and have been operated cw at room temperature. The nearfield and spectral properties are comparable to diodes fabricated by conventional techniques.
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79.20.Ds Laser-beam impact phenomena
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

InGaAsP/InP distributed‐feedback injection lasers fabricated by one‐step liquid phase epitaxy

A. Doi, T. Fukuzawa, M. Nakamura, R. Ito, and K. Aiki

Appl. Phys. Lett. 35, 441 (1979); http://dx.doi.org/10.1063/1.91165 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Fabrication and lasing characteristics of InGaAsP/InP distributed‐feedback injection lasers are described. An InGaAsP active layer, a p‐InP clad layer, and an n‐InGaAsP cap layer are successively grown on an InP substrate with a 0.32‐μm periodic corrugation. The diodes emit at a wavelength of 1.1 μm up to 170 K under pulsed operation. Single longitudinal mode oscillation and a small temperature dependence of the lasing wavelength of 0.054 nm/K are obtained in these diodes.
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42.55.Px Semiconductor lasers; laser diodes

The liquid‐crystal alignment properties of photolithographic gratings

J. Cheng and G. D. Boyd

Appl. Phys. Lett. 35, 444 (1979); http://dx.doi.org/10.1063/1.91166 (3 pages) | Cited 56 times

Online Publication Date: 7 August 2008

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The liquid‐crystal alignment properties of gratings with a 1–10‐μm period are described. Experiments are presented to compare the roles of interfacial interactions and surface topography in determining alignment. It is shown that grooves are neither necessary nor always sufficient to produce alignment. Interfacial forces can give rise to strongly pinned alignment, governed by various biases applied during the first appearance of long‐range order at the interface.
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42.79.Dj Gratings
61.30.-v Liquid crystals

Electrical and structural characteristics of laser‐induced epitaxial layers in silicon

R. T. Young, J. Narayan, and R. F. Wood

Appl. Phys. Lett. 35, 447 (1979); http://dx.doi.org/10.1063/1.91167 (3 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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We have used pulsed‐laser radiation to grow homoepitaxial p‐n junctions in silicon. Doped amorphous silicon was deposited on (100) and (111) silicon substrates and annealed with a Q‐switched ruby laser. By this technique, perfect epitaxial layers with good electrical characteristics and controlled dopant profiles can be achieved. The technique can potentially be competitive with or replace ion implantation for many semiconductor‐device applications.
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68.55.-a Thin film structure and morphology

Flexible GaAs ribbons

W. Tantraporn

Appl. Phys. Lett. 35, 449 (1979); http://dx.doi.org/10.1063/1.91168 (3 pages)

Online Publication Date: 7 August 2008

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Thin GaAs ribbons from Ga‐AsCl3‐H2 epitaxy are flexible. The rapid growth occurs along a 〈112〉 vector. The thin edges are {110}‐type planes while the flat surfaces appear to be {111}A. A ribbon of dimensions 2×0.1×0.002 cm3 can be bent to 1 cm diameter without breakage.
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68.55.-a Thin film structure and morphology
81.10.Bk Growth from vapor

Optical bistability in semiconductors

H. M. Gibbs, S. L. McCall, T. N. C. Venkatesan, A. C. Gossard, A. Passner, and W. Wiegmann

Appl. Phys. Lett. 35, 451 (1979); http://dx.doi.org/10.1063/1.91157 (3 pages) | Cited 186 times

Online Publication Date: 7 August 2008

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Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs‐GaAs‐GaAlAs molecular‐beam‐epitaxially‐grown sandwich with 90% reflectivity coatings. The bistability is primarily dispersive with the nonlinear refractive index arising from light‐induced changes in exciton absorption. Using light of frequency just below the exciton peak, we observed bistability from 5 to 120 °K with 40‐ns turn‐off and subnanosecond turn‐on times with 1 mW/μm2 holding intensity.
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42.50.-p Quantum optics
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.-e Optical properties of bulk materials and thin films

Degenerate four‐wave mixing near the band gap of semiconductors

R. K. Jain and M. B. Klein

Appl. Phys. Lett. 35, 454 (1979); http://dx.doi.org/10.1063/1.91158 (3 pages) | Cited 38 times

Online Publication Date: 7 August 2008

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We present a theoretical calculation and experimental data on the effective third‐order susceptibilities χ(3) for degenerate four‐wave mixing near the band gap of semiconductors. The closeness of the calculated and experimental values for the effective χ(3) in silicon at 1.06 μm indicates the utility of our simple calculation. The large values of χ(3) indicate the possibility of high‐efficiency degenerate four‐wave mixing in semiconductors, especially at longer wavelengths.
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42.65.-k Nonlinear optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.40.-i Holography
78.20.-e Optical properties of bulk materials and thin films

LPE growth of Hg0.60Cd0.40Te from Te‐rich solution

Joseph L. Schmit and John E. Bowers

Appl. Phys. Lett. 35, 457 (1979); http://dx.doi.org/10.1063/1.91159 (2 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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Hg0.60Cd0.40Te has been grown at atmospheric pressure using a liquid phase epitaxy (LPE) slider system. The compositions are uniform to within ±0.01 mole fraction across the layer and with depth into the layer except for a 3‐μm‐thick interdiffusion region. The layers are p type as grown with carrier concentration of 1017 cm−3 and are annealable to n type with a carrier concentration of 4×1015 cm−3.
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81.10.Dn Growth from solutions

Annealing kinetics of electron‐irradiated GaAs heteroface solar cells in the range 175–200 °C

G. H. Walker and E. J. Conway

Appl. Phys. Lett. 35, 459 (1979); http://dx.doi.org/10.1063/1.91160 (2 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Annealing of electron‐irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 1×1015 1‐MeV electrons/cm2 followed by thermal annealing. An activation energy for annealing of 1.25±0.14 eV and a frequency factor of (3.7±1.9) ×109 sec−1 were determined. A small component of the irradiation damage, which does not anneal measurably at 200 °C, was observed.
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84.60.Jt Photoelectric conversion
61.80.Fe Electron and positron radiation effects
82.20.Pm Rate constants, reaction cross sections, and activation energies
89.30.-g Fossil fuels and nuclear power

Second‐harmonic generation with Ga1−xAlxAs lasers and KNbO3 crystals

P. Günter, P. M. Asbeck, and S. K. Kurtz

Appl. Phys. Lett. 35, 461 (1979); http://dx.doi.org/10.1063/1.91169 (3 pages) | Cited 34 times

Online Publication Date: 7 August 2008

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Efficient second‐harmonic generation from pulsed Ga1−xAlxAs injection lasers operating at room temperature has been observed in KNbO3 crystals. The Al concentration x of the laser was chosen such that the output corresponds to the room‐temperature noncritical 90° phase‐matching wavelength λpm=860 nm for the nonlinear optical coefficient d32 of KNbO3. Up to 0.35‐mW peak harmonic power was obtained with a pulsed fundamental peak power of 785 mW incident on a 5.74‐mm‐long crystal.
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42.65.-k Nonlinear optics
42.72.-g Optical sources and standards
42.79.-e Optical elements, devices, and systems

High‐resolution scanning electron‐beam annealing of ion‐implanted silicon

K. N. Ratnakumar, R. F. W. Pease, D. J. Bartelink, N. M. Johnson, and J. D. Meindl

Appl. Phys. Lett. 35, 463 (1979); http://dx.doi.org/10.1063/1.91170 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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A commercial scanning electron microscope, modified for high‐current operation, has been successfully used to anneal silicon layers driven amorphous by high doses of implanted arsenic. Selected‐area electron channeling patterns indicate complete recrystallization of the implanted layer with substrate orientation. Spreading‐resistance measurements reveal complete electrical activation of the implanted arsenic with no dopant redistribution. The potential for localized annealing through a focused scanning electron beam is illustrated by the fabrication of submicron islands of recrystallized silicon surrounded by amorphous silicon of very high resistivity.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.U- Doping and impurity implantation

Zn‐diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima, Kazuo Sakai, Shigeyuki Akiba, and Takaya Yamamoto

Appl. Phys. Lett. 35, 466 (1979); http://dx.doi.org/10.1063/1.91171 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid‐phase‐epitaxial growth on (100) ‐InP substrate and Zn‐diffusion technique. An avalanche multiplication M as high as 32 was measured under broad‐area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron‐beam‐induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
66.30.J- Diffusion of impurities

Negative differential resistance through real‐space electron transfer

K. Hess, H. Morkoç, H. Shichijo, and B. G. Streetman

Appl. Phys. Lett. 35, 469 (1979); http://dx.doi.org/10.1063/1.91172 (3 pages) | Cited 114 times

Online Publication Date: 7 August 2008

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A new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel to the interface. The mechanism is based on hot‐electron thermionic emission from high‐mobility GaAs into low‐mobility AlxGa1−xAs. Preliminary calculations indicate that high peak‐to‐valley ratios can be achieved. The transfer speed is estimated to be of the order of 10−11 s. We further show that the concept of hot‐electron thermionic emission can be applicable to a variety of devices.
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72.20.Ht High-field and nonlinear effects
73.40.-c Electronic transport in interface structures
72.20.-i Conductivity phenomena in semiconductors and insulators
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Improvements of current‐carrying capacities of the composite‐processed Nb3Sn in high magnetic fields

H. Sekine, K. Tachikawa, and Y. Iwasa

Appl. Phys. Lett. 35, 472 (1979); http://dx.doi.org/10.1063/1.91173 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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The Nb3Sn growth rate Hc2 and Jc in high fields (⩾12 T) of composite‐processed Nb3Sn are greatly increased by the addition of hafnium to the niobium core. Furthermore, the simultaneous addition of hafnium to the core and gallium to the matrix more significantly enhances Hc2, and Jc in high fields. Jc of the Nb‐Hf/Cu‐Sn‐Ga wire specimens exceeds 1×105 A/cm2 at 17 T, suggesting the possibility of fabricating multifilamentary Nb3Sn composite wires that stand use in fields at least up to 17 T.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
FREE

Erratum: Laser irradiation of silicon containing misfit dislocations

W. K. Hofker, D. P. Oosthoek, G. E. J. Eggermont, Y. Tamminga, and W. T. Stacy

Appl. Phys. Lett. 35, 474 (1979); http://dx.doi.org/10.1063/1.91270 (1 page)

Online Publication Date: 7 August 2008

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Abstract Unavailable
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
99.10.Cd Errata
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