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1 Oct 1979

Volume 35, Issue 7, pp. 477-570

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Theoretical study of the deexcitation of KrF and XeF excimers by low‐energy electrons

A. U. Hazi, T. N. Rescigno, and A. E. Orel

Appl. Phys. Lett. 35, 477 (1979); http://dx.doi.org/10.1063/1.91202 (3 pages) | Cited 22 times

Online Publication Date: 7 August 2008

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Cross sections and rate constants for electron deexcitation of the excimer states of KrF and XeF have been calculated using a modified impact parameter method, and large ab initio wave functions. The superelastic processes are dominated by the B→X transitions with thermal rate constants of 7×10−8 and 3×10−8 cm3/sec for XeF and KrF, respectively.
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34.80.Gs Molecular excitation and ionization
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.20.Fs Electron collisions

Low‐loss reflection‐star couplers for optical‐fiber distribution systems

D. C. Johnson, B. S. Kawasaki, and K. O. Hill

Appl. Phys. Lett. 35, 479 (1979); http://dx.doi.org/10.1063/1.91203 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Low‐loss reflection‐star couplers using fused biconically tapered fiber loops are described. The fabrication technique is simple and also allows the construction of hybrid reflection‐transmission‐star couplers.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy

Yuichi Kawamura, Mutsuo Ikeda, Hajime Asahi, and Hiroshi Okamoto

Appl. Phys. Lett. 35, 481 (1979); http://dx.doi.org/10.1063/1.91204 (3 pages) | Cited 6 times

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A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band‐edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band‐edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep‐level emission than the LPE films and bulk crystals.
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78.55.-m Photoluminescence, properties and materials
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Impurity and phonon scattering in layered structures

K. Hess

Appl. Phys. Lett. 35, 484 (1979); http://dx.doi.org/10.1063/1.91205 (3 pages) | Cited 172 times

Online Publication Date: 7 August 2008

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The scattering rates for the electron‐impurity and the electron‐phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.
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72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis, P. D. Dapkus, N. Holonyak, and R. M. Kolbas

Appl. Phys. Lett. 35, 487 (1979); http://dx.doi.org/10.1063/1.91206 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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Room‐temperature (∼26 °C) continous operation of AlxGa1−xAs‐GaAs multiple‐quantum‐well injection lasers has been achieved. These devices are grown by metalorganic chemical vapor deposition and employ active regions consisting of six GaAs quantum wells having a thickness Lz∼120 Å separated by five Al0.30Ga0.70As barriers also ∼120 Å thick. These laser diodes operate on LO‐phonon‐assisted confined‐particle transitions and exhibit low threshold current densities (Jth∼1660 A/cm2) and high total external differential quantum efficiencies (ηext∼85%).
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.45.+h Stimulated emission

Improved geometry for polarization‐sensitive nonlinear spectroscopy

M. A. F. Scarparo, J. J. Song, J. H. Lee, C. Cromer, and M. D. Levenson

Appl. Phys. Lett. 35, 490 (1979); http://dx.doi.org/10.1063/1.91183 (3 pages) | Cited 2 times

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An improved geometry for nonlinear spectroscopy experiments is proposed and demonstrated with the Raman‐induced Kerr effect. The new scheme utilizes the nonreciprocal rotation of linearly polarized light in a Faraday rotator to manipulate the pump, probe, and signal beams. Complete collinear overlap of the interacting laser beams is conveniently achieved, with 100% of the nonlinearly generated signal incident on the detector. The sensitivity is consequently maximized.
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42.65.-k Nonlinear optics
78.30.-j Infrared and Raman spectra
07.60.Rd Visible and ultraviolet spectrometers

High‐power switching with picosecond precision

G. Mourou and W. Knox

Appl. Phys. Lett. 35, 492 (1979); http://dx.doi.org/10.1063/1.91207 (3 pages) | Cited 38 times

Online Publication Date: 7 August 2008

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Up to 10 kV have been switched with Si and GaAs laser‐activated switches. We show that in spite of the thermal instability shortcoming experienced in Si, quasi‐dc bias operation can be utilized in a manner which relaxes stringent synchronization requirements. In the case of GaAs the thermal instability is less severe and up to 8 kV dc has been held off and efficiently switched. In both cases, a fast switching time of ∼40 ps is observed. This time is a combination of the laser pulse width, geometry bandwidth, and jitter time. Efficient switching action requires only a few tens of microjoules of laser energy. Electrical pulses ranging from subnanosecond to hundreds of nanoseconds duration have been readily generated.
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61.90.+d Other topics in structure of solids and liquids; crystallography (restricted to new topics in section 61)
84.32.Dd Connectors, relays, and switches
85.30.-z Semiconductor devices

Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

G. Cheek, A. Genis, J. B. DuBow, and V. R. Pai Verneker

Appl. Phys. Lett. 35, 495 (1979); http://dx.doi.org/10.1063/1.91184 (3 pages) | Cited 13 times

Online Publication Date: 7 August 2008

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The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.
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72.40.+w Photoconduction and photovoltaic effects
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.65.-b Surface treatments

Beat frequency generation between visible lasers with frequency differences in the 80‐GHz band

B. Burghardt, H. Hoeffgen, G. Meisel, W. Reinert, and B. Vowinkel

Appl. Phys. Lett. 35, 498 (1979); http://dx.doi.org/10.1063/1.91185 (3 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Millimeter‐wave GaAs Schottky barrier diodes were used as fast light detectors. It was possible to observe beat signals between a HeNe laser oscillating at 633 nm and a cw dye laser with approximately 80‐GHz frequency offset. Thus, great frequency differences between lasers emitting in the visible can be determined with the high accuracy inherent in heterodyning techniques.
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42.60.-v Laser optical systems: design and operation
42.50.-p Quantum optics
06.30.Ft Time and frequency
72.40.+w Photoconduction and photovoltaic effects

Interference gratings blazed by ion‐beam erosion

L. F. Johnson and K. A. Ingersoll

Appl. Phys. Lett. 35, 500 (1979); http://dx.doi.org/10.1063/1.91186 (4 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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The use of ion‐beam erosion to transform rounded symmetric grating relief patterns into asymmetric profiles with planar facets and sharp angular features is described. Calculated profiles are confirmed by experimental profiles produced in GaAs but with significant modifications caused by redeposition. Higher efficiency interference (holographic) gratings for spectroscopic and integrated optics applications are suggested by these results.
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42.79.Dj Gratings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings

The quantum yield of silicon in the visible

Jon Geist and Edward F. Zalewski

Appl. Phys. Lett. 35, 503 (1979); http://dx.doi.org/10.1063/1.91187 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
Extremely high accuracy measurements of the internal quantum efficiency of shallow‐junction silicon photodetectors were fit with various theoretical models. The internal quantum efficiency was found to be rather model independent indicating its possible use as a radiometric standard. The results of this investigation indicate that the quantum yield of silicon is unity to within a few tenths of one percent in the visible.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.60.Dq Photometers, radiometers, and colorimeters

Chemical production of vibrationally excited HBr for a continuous wave laser

Donald J. Miller, William L. Shackleford, and George Emanuel

Appl. Phys. Lett. 35, 506 (1979); http://dx.doi.org/10.1063/1.91188 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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Bromine has been added to the hydrogen cavity fuel of a cw supersonic mixing HF chemical laser. The hydrogen atoms produced in the F+H2→HF(v⩽3)+H reaction are used to continuously produce vibrationally excited HBr by the reaction H+Br2→HBr(v⩽6)+Br. Infrared chemiluminescence measurements indicate unsaturated gain coefficients of about (2±1) ×10−3 cm−1 for J=4 through J=8 for v=3, 2, and 1 levels of HBr. The current 3‐cm gain length is not sufficient for lasing without the use of high‐reflectivity mirrors, but a scaling to 18‐cm gain length would be appropriate for a cw HBr chemical laser operating in the 4.0‐ to 4.5‐μm region.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
82.40.-g Chemical kinetics and reactions: special regimes and techniques

Bright green electroluminescence in thin‐film ZnS : TbF3

K. Okamoto and Y. Hamakawa

Appl. Phys. Lett. 35, 508 (1979); http://dx.doi.org/10.1063/1.91189 (4 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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A bright green electroluminescent (EL) thin‐film device for a flat‐type display has been developed. The device is constructed by a ZnS : TbF3 thin‐film sandwiched between two semiconductive Y2O3 layers. A typical brightness of 200 fL and a power conversion efficiency of 4×10−4 W/W, values at least several times higher than reported elsewhere for green‐color thin‐film EL, are stably obtained at an excitation frequency of 5 kHz. This device is also capable of dc excitation with high efficiency (1×10−3 W/W) due to the existence of a semiconductive Y2O3 layer instead of an insulating layer. The semiconductive Y2O3 layer used in this device plays an important role in producing carriers in the ZnS active layer. Technical data on the characterization of the carrier injection mechanism and the device performance are presented and discussed.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

High avalanche gain in small‐area InP photodiodes

T. P. Lee, C. A. Burrus, A. G. Dentai, A. A. Ballman, and W. A. Bonner

Appl. Phys. Lett. 35, 511 (1979); http://dx.doi.org/10.1063/1.91190 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Extremely high avalanche gains, up to 2×104, accompanied by low leakage current and moderate excess avalanche noise, have been observed in small areas of diffused p‐n junctions in undoped n‐type InP. The results imply that dislocation densities much less than 104 cm−2 probably will be a prerequisite for practical long‐wavelength avalanche photodiodes in the InGaAsP/InP system.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Highly efficient (GaAl)As buried‐heterostructure lasers with buried optical guide

N. Chinone, K. Saito, R. Ito, K. Aiki, and N. Shige

Appl. Phys. Lett. 35, 513 (1979); http://dx.doi.org/10.1063/1.91191 (4 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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A new buried‐heterostructure laser with a buried optical guide has been developed. A threshold current around 20 mA and a differential quantum efficiency as high as 85% are obtained under cw operation. This results in highly efficient laser operation, i.e., 35% power conversion efficiency at an optical output of 15 mW per facet, at which no degradation is observed over 3000 h at room temperature. Stable lowest‐order transverse mode and nearly isotropic laser beam (∼25°×35°) are obtained. Second‐order harmonic distortion is 55–65 dB below the fundamental level for 30% modulation with a 100‐MHz sinusoidal signal at 5 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Temperature‐dependent absorption processes in the XeF laser

L. F. Champagne

Appl. Phys. Lett. 35, 516 (1979); http://dx.doi.org/10.1063/1.91192 (4 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Temperature‐dependent absorption processes in neon/xenon/NF3 mixtures are reported. In pure neon plasmas there are two types of absorption present; a broad but weak band of absorption is observed, which increases with increasing temperature, and a strong narrow band of absorption is observed around 351 nm. Moderate heating reduces this absorption. Improved performance of the XeF laser at elevated temperature is primarily due to reduced absorption in the laser medium at 351 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Enhancement of convolution voltage due to transverse drift of carriers in piezoelectric semiconductor SAW convolvers

Shigetaka Matsumoto

Appl. Phys. Lett. 35, 520 (1979); http://dx.doi.org/10.1063/1.91193 (2 pages)

Online Publication Date: 7 August 2008

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The enhancement of the convolution voltage of piezoelectric surface acoustic wave (SAW) convolvers due to the transverse drift of carriers is predicted theoretically. The theoretical prediction is qualitatively in agreement with the result of experiments using photoconductive CdS samples.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.35.Pt Surface waves in solids and liquids

Surface‐acoustic‐wave plate convolvers at 1 GHz

R. D. Colvin and P. H. Carr

Appl. Phys. Lett. 35, 522 (1979); http://dx.doi.org/10.1063/1.91194 (2 pages)

Online Publication Date: 7 August 2008

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Convolution has been performed at 800 MHz and 1 GHz on Y cut, Z propagating and 38° (rotated from +Z) cut, X propagating lithium niobate, respectively. No saturation of the convolved output was observed for an acoustic power of 178 mW/mm. An attenuation of 1.4±0.3 dB/μsec due to a 500‐Å Al film was measured at 1 GHz.
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43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.25.Yw Nonlinear acoustics of bubbly liquids
43.60.Gk Space-time signal processing, other than matched field processing

Imploding argon plasma experiments

C. Stallings, K. Childers, I. Roth, and R. Schneider

Appl. Phys. Lett. 35, 524 (1979); http://dx.doi.org/10.1063/1.91195 (3 pages) | Cited 48 times

Online Publication Date: 7 August 2008

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The Pithon pulsed electron beam accelerator was used to implode an argon plasma at 4 TW. The plasma was prepared by microwave preionization of an annular column of gas injected between the output electrodes of the pulser. The electrodynamic behavior implied that most of the gas was involved in the pinch. The plasma conditions were inferred from hydrogenlike and heliumlike x‐ray emission spectra. Final pinch dimensions were determined from x‐ray pinhole photographs and laser shadowgraphs.
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52.50.Dg Plasma sources
52.80.-s Electric discharges

Dependence of spontaneous magnetic fields in laser produced plasmas on target size and structure

A. Raven, P. T. Rumsby, J. A. Stamper, O. Willi, R. Illingworth, and R. Thareja

Appl. Phys. Lett. 35, 526 (1979); http://dx.doi.org/10.1063/1.91196 (3 pages) | Cited 44 times

Online Publication Date: 7 August 2008

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Faraday rotation observations of magnetic fields generated by a high‐power (λ=1.06 μm) laser focused on various targets have been made. Results indicate that the fields produced on spherical targets may depend strongly on the target capacitance. Strongly structured fields were observed using large prepulse‐formed plasmas on wire targets. Using novel composition discontinuity targets and a UV probe beam, planar magnetic fields were noted and toroidal fields in the critical density region measured.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Kinetics of the thermal oxidation of WSi2

F. Mohammadi, K. C. Saraswat, and J. D. Meindl

Appl. Phys. Lett. 35, 529 (1979); http://dx.doi.org/10.1063/1.91197 (3 pages) | Cited 39 times

Online Publication Date: 7 August 2008

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The thermal oxidation WSi2 films has been studied. Thin films of WSi2 were deposited by sputtering on (100) silicon and on oxidized silicon, and then oxidized in dry O2 and in steam atmospheres at 1000, 1100, and 1200 °C for times up to 30 min. In all cases the dry O2 oxidation resulted in films of poor quality. The films had rough surfaces, with WO3 present in powder form. However, steam oxidation gave SiO2 films of good quality. For WSi2/Si as well as WSi2/SiO2/Si samples, as the oxidation proceeded, WSi2 reacted with steam to form SiO2 and W5Si3. The rate of oxidation and activation energy were different for the two types of substrates. For WSi2 films deposited directly on Si, the oxidation process was significantly modified because Si atoms rapidly diffused through the silicides and took part in the oxidation process, and thus affected the conversion of WSi2 to W5Si3. However, with WSi2 films deposited on oxidized Si, the absence of free Si atoms resulted in the faster transformation of WSi2 into W5Si3.
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68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
81.65.-b Surface treatments

Solid solubility of As in Si as determined by ion implantation and cw laser annealing

A. Lietoila, J. F. Gibbons, T. J. Magee, J. Peng, and J. D. Hong

Appl. Phys. Lett. 35, 532 (1979); http://dx.doi.org/10.1063/1.91198 (3 pages) | Cited 62 times

Online Publication Date: 7 August 2008

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Complete electrical activity was obtained by cw laser annealing of 7×1015 As/cm2 implanted into (100) Si at 100 keV. The peak concentration for these implantation conditions is 1.4×1021/cm3, both theoretically and experimentally. However, this peak concentration was found to be thermally unstable, relaxing to a value of 3×1020/cm3 in a period of less than 2 min at 900 °C. If the peak implanted concentration is below 3×1020/cm3, the electrical activation and crystal structure are unaffected by similar thermal processing. We conclude from these data that the solid solubility of As in Si at 900 °C is approximately 3×1020/cm3, which is almost an order of magnitude below the published value.
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64.75.-g Phase equilibria
61.72.U- Doping and impurity implantation
79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

An additional source of photovoltage in photoconductive materials

S. J. Fonash and S. Ashok

Appl. Phys. Lett. 35, 535 (1979); http://dx.doi.org/10.1063/1.91199 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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A possible additional source of photovoltage in solar cells made on photoconductive materials is identified. Arising from suitable compositional or doping variations of the material, this excess voltage could significantly enhance the open‐circuit voltage of solar cells fabricated on amorphous Si : H, related alloys, and other materials that exhibit pronounced photoconductivity.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Direct injection readout of the p‐n PbS‐Si heterojunction detector

A. J. Steckl, K. Y. Tam, and M. E. Motamedi

Appl. Phys. Lett. 35, 537 (1979); http://dx.doi.org/10.1063/1.91200 (3 pages)

Online Publication Date: 7 August 2008

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An n‐channel MOSFET circuit implemented within a CMOS structure has been used to test the feasibility of integrating the infrared signal readout within a PbS‐Si heterojunction detector (HJD) array. The efficiency of the source‐coupled direct injection readout was determined from ηinj=I′ph/Iph, where I′ph is the photocurrent measured with the direct injection readout and Iph is the photocurrent measured with a virtual ground transimpedance amplifier. From the equivalent circuit of the direct injection input, the theoretical injection efficiency at low frequency has been shown to be ηinj =gm(gm+GD)−1, where gmis the MOSFET transconductance and GD is the detector conductance. Good agreement between the experimental and theoretical injection efficiency has been found over a wide range. Injection efficiencies as high as 90% have been measured.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Highly doped evaporated amorphous silicon by alkali implantation

W. Beyer, A. Barna, and H. Wagner

Appl. Phys. Lett. 35, 539 (1979); http://dx.doi.org/10.1063/1.91201 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Evaporated films of amorphous silicon can be doped interstitially by implantation of alkali ions. Room temperature conductivity values as high as σ=2×10−3 (Ω cm)−1 and activation energies of σ as low as 0.25 eV are obtained by implantation of 1% potassium in films prepared with a low rate of deposition. The doped state is stable up to 320 °C. Results from stepwise doping with sodium indicate a rather constant density of localized states in the gap of the order 3×1019/cm3 eV for rapidly evaporated films.
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72.80.Ng Disordered solids
72.20.Pa Thermoelectric and thermomagnetic effects
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
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