APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Oct 1979

Volume 35, Issue 7, pp. 477-570

Page 2 of 2 Pages Previous Page | Jump to Page

Cadmium‐tin oxide films deposited by rf sputtering from a CdO‐SnO2 target

N. Miyata, K. Miyake, T. Fukushima, and K. Koga

Appl. Phys. Lett. 35, 542 (1979); http://dx.doi.org/10.1063/1.91208 (2 pages) | Cited 13 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Cadmium‐tin oxide (CTO) films with high conductivity and high transparency were prepared by rf sputtering from a CdO‐SnO2 target in an Ar or Ar‐O2 atmosphere. The resistivity of CTO films was 6.5×10−4 Ω  in the film thickness range of 2500–15000 Å, and the average transmission was 90% over the visible region.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Fabrication of mesa‐type waveguides in AlGaAs structures by laser irradiation

R. P. Salathé, H. H. Gilgen, Y. Rytz‐Froidevaux, W. Lüthy, and H. P. Weber

Appl. Phys. Lett. 35, 543 (1979); http://dx.doi.org/10.1063/1.91209 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Passive three‐dimensional light guides have been generated by exposing small areas of AlxGa1−xAs heterostructure material to cw argon laser radiation and subsequent removal of the irradiated zones by selective etching. Mesa‐type waveguides with a width of 2.5 μm and a lateral definition of better than 0.3 μm have been produced. The luminescence emitted by the samples during the irradiation has been monitored to investigate the dynamics of processing.
Show PACS
42.79.Gn Optical waveguides and couplers
42.60.-v Laser optical systems: design and operation
81.90.+c Other topics in materials science (restricted to new topics in section 81)

Pulsed electron‐beam annealing of selenium‐implanted gallium arsenide

T. Inada, K. Tokunaga, and S. Taka

Appl. Phys. Lett. 35, 546 (1979); http://dx.doi.org/10.1063/1.91210 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Electrical properties of selenium‐implanted gallium arsenide annealed by a single shot of high‐power pulsed electron beams have been investigated by differential Hall‐effect and sheet‐resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron‐beam annealing at an incident energy density of 1.2 J/cm2, independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2–3×1019/cm3, which is difficult to realize by conventional thermal annealing.
Show PACS
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
66.30.J- Diffusion of impurities

A silicon heterojunction transistor

T. Matsushita, N. Oh‐uchi, H. Hayashi, and H. Yamoto

Appl. Phys. Lett. 35, 549 (1979); http://dx.doi.org/10.1063/1.91174 (2 pages) | Cited 18 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
SIPOS (Semi‐insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P‐ or B‐doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS‐Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high‐temperature treatments in nitrogen and low‐temperature annealing in hydrogen or forming gas.
Show PACS
85.30.Pq Bipolar transistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
72.80.Ng Disordered solids

The influence of plasma annealing on electrical properties of polycrystalline Si

T. Makino and H. Nakamura

Appl. Phys. Lett. 35, 551 (1979); http://dx.doi.org/10.1063/1.91175 (2 pages) | Cited 20 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Polycrystalline silicon doped with phosphorus and boron was prepared by low‐temperature CVD and was annealed in a hydrogen/nitrogen plasma at 300 °C. The dopants were introduced by ion implantation and the concentration ranged from 2×1016 to 2×1019 cm−3. Plasma annealing decreased the poly‐Si resistivity, which is significant at particular doping concentrations depending on density of localized states. The effect is due to reduction of deep localized states through hydrogenation and is canceled by additional annealing in nitrogen at 600 °C.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

A monolithic series‐connected Al0.93Ga0.07As/GaAs solar cell array

Peter G. Borden

Appl. Phys. Lett. 35, 553 (1979); http://dx.doi.org/10.1063/1.91176 (2 pages) | Cited 6 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
A monolithic Al0.93Ga0.07As/GaAs solar cell array has been demonstrated. It consists of four adjacent 0.1×0.55‐cm cells connected in electrical series with an etched groove isolation and metal interconnect scheme. With 819.5 W/m2 incident solar radiation, it exhibits an open‐circuit voltage of 3.96 V, short‐circuit current of 1.01 mA, and a fill factor of 0.625. The observed efficiency of 13.85% appears to be limited by the mechanisms of contact resistance and interconnect area.
Show PACS
84.60.Jt Photoelectric conversion
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Casting of dendritic Cu‐Nb alloys for superconducting wire

J. D. Verhoeven, F. A. Schmidt, E. D. Gibson, J. E. Ostenson, and D. K. Finnemore

Appl. Phys. Lett. 35, 555 (1979); http://dx.doi.org/10.1063/1.91177 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Consumable electrode‐arc‐casting techniques have been developed for the preparation of large billets of dendritic Cu‐Nb alloys which are suitable for the fabrication of multifilamentary superconducting wire. The dendrite structure is somewhat more coarse than chill cast material but metallographic and chemical analyses show acceptably small radial and longitudinal segregation. The billets can be drawn to wire with no intermediate anneals. Both external diffusion after tin plating and internal diffusion of wire with a tin core can be used to transform the Nb filaments to Nb3Sn. The arc cast wire displays Jc values equivalent to previously reported values on in situ wire at high fields, but somewhat lower values at low fields.
Show PACS
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

On the elimination of Kirkendall voids in superconducting composites

S. Cogan, D. S. Holmes, and R. M. Rose

Appl. Phys. Lett. 35, 557 (1979); http://dx.doi.org/10.1063/1.91178 (3 pages) | Cited 11 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
Kirkendall void formation, which has hitherto prevented the use of the external diffusion technique for the manufacture of practical multifilamentary superconducting composites, can be suppressed by using solution anneals to eliminate sites for heterogeneous void nucleation.
Show PACS
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
62.20.-x Mechanical properties of solids

The importance of geometry, field, and temperature in tunneling and rectification behavior of point contact junctions of identical metals

N. M. Miskovsky, S. J. Shepherd, P. H. Cutler, T. E. Sullivan, and A. A. Lucas

Appl. Phys. Lett. 35, 560 (1979); http://dx.doi.org/10.1063/1.91179 (3 pages) | Cited 21 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
This letter presents new results on the tunneling and rectification characteristics of metal‐whisker point‐contact diodes. The model adopted here includes two new important effects, namely, the actual geometrical asymmetry of the electrodes and a temperature differential between tip and base. Calculations, for a point‐contact junction of identical metals, confirm the feasibility of a rectification mechanism based solely on the geometrical asymmetry of the tip and base.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.40.Ei Rectification
73.40.Gk Tunneling
73.40.Jn Metal-to-metal contacts

A comparison of the behaviors of tungsten trioxide and anodic iridium oxide film electrochromics in a nonaqueous acidic medium

C. E. Rice

Appl. Phys. Lett. 35, 563 (1979); http://dx.doi.org/10.1063/1.91180 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
The performance of anodic iridium oxide film (AIROF) and WO3 electrochromic electrodes was tested in a water‐free perchloric acid/dimethylsulfoxide solution. WO3 could be colored and bleached electrochemically to nearly the same extent as in water solutions, albeit much more slowly. By contrast, no electrochromic effect could be produced with AIROF electrodes. This proves that the electrochromic processes for these two materials are fundamentally different and that a simple proton‐electron injection mechanism cannot account for AIROF electrochromism.
Show PACS
85.60.Pg Display systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Solid‐state electrochromic cell with anodic iridium oxide film electrodes

W. C. Dautremont‐Smith, G. Beni, L. M. Schiavone, and J. L. Shay

Appl. Phys. Lett. 35, 565 (1979); http://dx.doi.org/10.1063/1.91181 (3 pages) | Cited 10 times

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
A new solid‐state electrochromic cell has been fabricated using an anodic iridium oxide film (AIROF) display electrode. The cell has the symmetric sandwich structure AIROF‖Nafion‖AIROF, with the Nafion solid electrolyte opacified by an in situ precipitation technique. A symmetric square‐wave voltage of 1.5 V amplitude produces clearly perceivable color changes from pale to dark blue‐gray in ≈1 sec when viewed in diffuse reflection. Good open‐circuit optical memory is exhibited: (typical loss in attenuation of 8%/day).
Show PACS
85.60.Pg Display systems
82.47.-a Applied electrochemistry
75.20.Ck Nonmetals

Optimization of a multistage thermoelectric refrigerator using the asymptotic temperature distribution

Y. Weissman

Appl. Phys. Lett. 35, 568 (1979); http://dx.doi.org/10.1063/1.91182 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

Full Text: | Download PDF

Show Abstract
In this letter we suggest that the interstage temperatures which optimize the coefficient of performance of a multistage thermoelectric refrigerator can be obtained from the asymptotic temperature distribution. This temperature distribution is derived by variation calculus in the limit of infinite number of stages. Numerical calculations show that the accuracy of this method is sufficient for practical purposes. The only limitation on the temperature dependence of the thermoelectric properties of the material is the average parameter approximation.
Show PACS
85.80.Fi Thermoelectric devices
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close