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15 Oct 1979

Volume 35, Issue 8, pp. 575-647

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Optically controllable millimeter wave phase shifter

A. P. DeFonzo, Chi H. Lee, and P. S. Mak

Appl. Phys. Lett. 35, 575 (1979); http://dx.doi.org/10.1063/1.91212 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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We have demonstrated a new approach to controlling millimeter wave propagation with light. Phase shifts as high as 300°/cm of 94‐GHz millimeter waves were observed accompanied by less than 1 dB insertion loss. A straightforward model was found to account in detail for the observed behavior.
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72.30.+q High-frequency effects; plasma effects
78.20.Jq Electro-optical effects
84.40.Az Waveguides, transmission lines, striplines
85.30.De Semiconductor-device characterization, design, and modeling

(InGa)(AsP)/InP embedded mesa stripe lasers

F. C. Prince, N. B. Patel, and D. J. Bull

Appl. Phys. Lett. 35, 577 (1979); http://dx.doi.org/10.1063/1.91213 (4 pages)

Online Publication Date: 7 August 2008

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A structure to avoid nonlinearities in the light‐output versus current is proposed in long wavelength lasers of InGaAsP. This structure is very similar to a channeled‐substrate planar laser in GaAlAs system. As in the GaAs lasers, nonlinearities are significantly reduced by introducing a built‐in passive wave‐guiding mechanism.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices

The isotope shift in the 22P states of lithium and spatially resolved laser‐induced fluorescence

R. Mariella

Appl. Phys. Lett. 35, 580 (1979); http://dx.doi.org/10.1063/1.91214 (2 pages) | Cited 20 times

Online Publication Date: 7 August 2008

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Spatially resolved laser‐induced fluorescence has been used to observe and measure the isotope shift for atomic lithium in the 22P←22S transitions. A modified saturated absorption spectrum was also obtained for the ’’overlapping’’ transitions. The 7Li‐6Li isotope shift in the absence of fine and hyperfine splittings is calculated to be 1 0532±5 MHz.
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32.50.+d Fluorescence, phosphorescence (including quenching)
28.60.+s Isotope separation and enrichment

Tunable submillimeter sources applied to the excited state rotational spectroscopy and kinetics of CH3F

W. A. M. Blumberg, H. R. Fetterman, D. D. Peck, and P. F. Goldsmith

Appl. Phys. Lett. 35, 582 (1979); http://dx.doi.org/10.1063/1.91215 (4 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Tunable submillimeter radiation, generated and detected using optically pumped lasers and Schottky diode mixers, has been used in an infrared‐submillimeter double resonance investigation of CH3F. This technique permits the direct observation of the molecular rotational spectra and kinetics of excited vibrational states and is particularly important for those molecules which are candidates for optically pumped submillimeter lasers.
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33.40.+f Multiple resonances (including double and higher-order resonance processes, such as double nuclear magnetic resonance, electron double resonance, and microwave optical double resonance)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

Photoacoustic signal changes associated with variations in semiconductor crystallinity

J. F. McClelland and R. N. Kniseley

Appl. Phys. Lett. 35, 585 (1979); http://dx.doi.org/10.1063/1.91216 (3 pages) | Cited 16 times

Online Publication Date: 7 August 2008

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A photoacoustic (PA) signal dependence on Si crystal quality has been observed. The signal behavior has been investigated and on the basis of present evidence appears consistent, under conditions described in the letter, with PA theory as recently extended to include two‐layer systems. Results of this study have potential use in laser annealing applications because they may provide a means of rapidly evaluating the degree of recrystallization, using the annealing laser beam set at a lower power level for PA excitation.
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81.40.Tv Optical and dielectric properties related to treatment conditions
42.62.-b Laser applications
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
81.40.Gh Other heat and thermomechanical treatments

A new InGaAsP/InP dual‐wavelength LED

Shiro Sakai, Takahiro Aoki, Yoshifumi Amemiya, and Masayoshi Umeno

Appl. Phys. Lett. 35, 588 (1979); http://dx.doi.org/10.1063/1.91217 (2 pages) | Cited 4 times

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A new dual‐wavelength light‐emitting diode (LED) emitting near 1.2 and 1.3 μm has been fabricated. The differential efficiencies of the two outputs were 0.36 and 0.88%, respectively. The intensities of these optical outputs can be controlled independently. The optical cross talk between the two wavelengths was −10 and −16 dB at 1.15 and 1.35 μm, respectively. This device is useful for wavelength‐multiplexed optical communication systems.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.72.-g Optical sources and standards
42.82.-m Integrated optics

Time resolved fluorescence of trans‐Stilbene in the picosecond regime

J. R. Taylor, M. C. Adams, and W. Sibbett

Appl. Phys. Lett. 35, 590 (1979); http://dx.doi.org/10.1063/1.91218 (3 pages) | Cited 21 times

Online Publication Date: 7 August 2008

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The Synchroscan streak camera system has been used to examine the temperature dependence of the fluorescence decay of trans‐Stilbene between ‐10 and 30 °C. Two components of the fluorescence have been detected; a short one varying between 125 and 64 psec over the range and a much weaker longer one varying from 690 to 1450 psec. The presence of the longer component may indicate a return to the transgeometry following initial photoisomerization.
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33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)
06.60.Jn High-speed techniques (microsecond to femtosecond)
82.50.-m Photochemistry

Electromagnetic acoustic resonance in metals and alloys

E. G. Spencer, P. H. Schmidt, and F. J. Sansalone

Appl. Phys. Lett. 35, 593 (1979); http://dx.doi.org/10.1063/1.91219 (3 pages)

Online Publication Date: 7 August 2008

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A technique has been developed for measuring the temperature dependence of elastic moduli of metals and alloys using electromagnetic excitation of acoustic resonance in small spheres polished optically smooth. A frequency swept marginal oscillator is used to generate and detect resonances without physical contact to the sample. Values of Cij are reproducible with accuracies of ∼1/104. Variations of ∼1/106 are detected using an oscillator mode which is phase locked to sample resonance. Measurements of C44 and (1/2)(C11−C12), from 300 to 4.2 K, on a 4.7‐mm‐diam. tungsten sphere are given to illustrate the technique.
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62.20.-x Mechanical properties of solids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Yb Ultrasonic instrumentation and measurement techniques

Temperature‐compensated PbTiO3 ceramics for surface acoustic wave applications

Yukio Ito, Hiroshi Takeuchi, Shigeru Jyomura, Kazuyuki Nagatsuma, and Sakichi Ashida

Appl. Phys. Lett. 35, 595 (1979); http://dx.doi.org/10.1063/1.91220 (3 pages) | Cited 26 times

Online Publication Date: 7 August 2008

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Lead titanate PbTiO3 ceramics with a zero temperature coefficient of surface wave delay time are developed by addition of Nd2O3, In2O3, and MnO2. These ceramics have very small temperature coefficients of less than 1 ppm/ °C over a wide temperature range (−10–+60 °C). They have a large electromechanical coupling factor and low dielectric constant. The propagation loss is 4 dB/cm at 57 MHz. These modified PbTiO3 ceramics have high potential for use in surface wave applications, e.g., filters.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects

Six‐beam irradiation and implosion of laser fusion targets: Laser focus dependence

E. I. Thorsos, T. C. Bristow, J. A. Delettrez, J. M. Soures, and J. E. Rizzo

Appl. Phys. Lett. 35, 598 (1979); http://dx.doi.org/10.1063/1.91221 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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DT‐filled 115‐μm‐diam. glass microballoons have been irradiated with the six‐beam ZETA laser (Nd: phosphate glass) at 2 TW. The absorption uniformity and implosion symmetry have been studied with x‐ray imaging for variations in the laser focal conditions. Symmetry, as indicated by the x‐ray spatial emission of both the absorption region and the imploded core, has been found to be a strong function of illumination uniformity.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.-m Plasma diagnostic techniques and instrumentation
52.25.Fi Transport properties

Hall effect in reactively sputtered Cu2S

John Y. Leong and Jick H. Yee

Appl. Phys. Lett. 35, 601 (1979); http://dx.doi.org/10.1063/1.91222 (2 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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The Hall effect in thin films of reactively sputtered Cu2S was measured at temperatures from 90 to 300 °K. The hole concentration ranged from 1018 to 2×1019 cm−3. The hole mobility ranged from 5.5 to 9 cm2/V s. The predominant scattering mechanisms are ionized impurity scattering at T<100 °K and optical phonon scattering at T≳100 °K.
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72.20.Fr Low-field transport and mobility; piezoresistance
71.55.-i Impurity and defect levels

Vapor‐phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates

Hiroshi Kanbe, Yoshiharu Yamauchi, and Nobuhiko Susa

Appl. Phys. Lett. 35, 603 (1979); http://dx.doi.org/10.1063/1.91223 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Effects of InP substrate orientation on InxGa1−xAs vapor‐phase epitaxial growth are studied. The fractional composition x of the grown layer on (100) substrate is smaller than for (111) B at identical growth temperatures and gas flow rates. The In content x decreases with increasing temperature. Growth rate, carrier concentration, and carrier mobility depend on substrate orientation. Growth on (100) substrates at temperatures above 710°C is suitable for obtaining smooth surface layers with low carrier concentration and high mobility.
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68.55.-a Thin film structure and morphology
81.10.Bk Growth from vapor
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Thin films of LiNbO3, doped with Na+ and Co2++Zr4+, grown by liquid‐phase epitaxy

R.R. Neurgaonkar, M.H. Kalisher, E. J. Staples, and T. C. Lim

Appl. Phys. Lett. 35, 606 (1979); http://dx.doi.org/10.1063/1.91224 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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LiNbO3 thin films doped with Na+ and Co2++ Zr4+ have been obtained by the liquid‐phase epitaxial (LPE) technique from Li2O‐V2O5 flux. X‐ray diffraction studies indicated that the films had a high single crystallinity with good epitaxy. The Na+ and Co2+ +Zr4+ doped LiNbO3 films showed a reduction in the temperature coefficient of surface acoustic wave velocity.
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68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining

The depth of defect annihilation in silicon by pulse laser annealing: Experiment and theory

L. Jastrzebski, A. E. Bell, and C. P. Wu

Appl. Phys. Lett. 35, 608 (1979); http://dx.doi.org/10.1063/1.91225 (4 pages) | Cited 11 times

Online Publication Date: 7 August 2008

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Defect annihilation has been observed in silicon as a result of laser annealing using a Q‐switched ruby laser. The threshold pulse energy density for defect annihilation was found to be 1 J/cm2 (pulse length ∼25 ns), and the depth of the defect‐free region was found to increase with increasing pulse energy. A thermal model was developed which predicts the depth of melting and the recrystallization velocity. The calculated depth of melting was found to be in good agreement with the experimentally determined depth of defect annihilation. The defect annihilation occurs as a direct result of the extremely high recrystallization velocities which are associated with laser annealing with short pulses.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Fq Growth from melts; zone melting and refining
81.40.Rs Electrical and magnetic properties related to treatment conditions
44.10.+i Heat conduction

Methods for minimizing silicon regrowth in aluminum films

Arthur J. Learn and R. S. Nowicki

Appl. Phys. Lett. 35, 611 (1979); http://dx.doi.org/10.1063/1.91226 (4 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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The transport of polycrystalline silicon into an overlying aluminum film and silicon regrowth in the metal medium under heating at 500 °C was examined as a function of doping level and grain size of the silicon. Such regrowth was eliminated through phosphorus doping and was substantially reduced for increased grain size. These results are consistent with a mechanism of silicon grain‐boundary transport in the films. The necessity for a silicon oxide layer at the aluminum‐silicon interface, if regrowth is to occur, is also indicated.
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68.55.-a Thin film structure and morphology
66.30.-h Diffusion in solids
61.72.Mm Grain and twin boundaries
73.40.Ns Metal-nonmetal contacts

Alloying of Au layers and redistribution of Cr in GaAs

T. J. Magee, J. Peng, J. D. Hong, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 35, 615 (1979); http://dx.doi.org/10.1063/1.91227 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Alloying of Au films on Cr‐doped GaAs substrates and Sn‐doped LPE layers grown on semi‐insulating substrates has been investigated by TEM and SIMS profiling. Annealing at 350 °C for variable periods was found to produce rapid outdiffusion of Cr into regions of near‐surface damage induced by strain effects at the interface and subsequent diffusion of Au into the GaAs.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.-y Defects and impurities in crystals; microstructure

Substrate temperature limits for epitaxy of InP by MBE

M. T. Norris and C. R. Stanley

Appl. Phys. Lett. 35, 617 (1979); http://dx.doi.org/10.1063/1.91228 (4 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2 beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor‐liquid‐solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.
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68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Short‐channel MOS FET’s fabricated by self‐aligned ion implantation and laser annealing

M. Koyanagi, H. Tamura, M. Miyao, N. Hashimoto, and T. Tokuyama

Appl. Phys. Lett. 35, 621 (1979); http://dx.doi.org/10.1063/1.91229 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Short‐channel MOS FET’s are successfully fabricated using Q‐switched ruby laser irradiation on As‐implanted sources and drains. Implantation and laser irradiation are both self‐aligned by the polysilicon gate electrodes. The threshold‐voltage–vs–channel‐length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.
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61.80.-x Physical radiation effects, radiation damage
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.Tv Field effect devices

Photoluminescence of gallium arsenide encapsulated with aluminum nitride and silicon nitride

Hulya Birey, Sung‐Jae Pak, and J. R. Sites

Appl. Phys. Lett. 35, 623 (1979); http://dx.doi.org/10.1063/1.91211 (3 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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Aluminum nitride and silicon nitride films were deposited on lightly doped n‐type GaAs : Si by low‐energy ion beam sputtering. Mechanically, the films were stable at annealing temperatures above 900 °C. In contrast to bare GaAs and previously reported encapsulation with Si3N4, where the 1.36‐eV line appears at relatively low annealing temperatures, there was no change in the photoluminescence spectrum until the samples were annealed at 800 °C in the case of aluminum nitride and 900 °C for silicon nitride.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.-m Photoluminescence, properties and materials

Laser‐induced vapor deposition of silicon

M. Hanabusa, Akira Namiki, and Keitaro Yoshihara

Appl. Phys. Lett. 35, 626 (1979); http://dx.doi.org/10.1063/1.91230 (2 pages) | Cited 35 times

Online Publication Date: 7 August 2008

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Silicon films were deposited when silane was irradiated with a pulsed CO2 laser. This laser‐induced vapor deposition occurs effectively when the laser is tuned to an absorption frequency of SiH4. Efficiency was so high that an unfocused beam of 1.3 MW/cm2 sufficed. Any thermal effects are ruled out. Deposition is induced efficiently at gas pressures above 100 Torr, indicating that a collision‐aided process is involved.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.-v Laser optical systems: design and operation
33.90.+h Other topics in molecular properties and interactions with photons (restricted to new topics in section 33)

Dynamic behavior of mode‐locked Nd : YAG laser annealing in ion‐implanted Si, GaAs, and GaP

Kouichi Murakami, Kenji Gamo, Susumu Namba, Mitsuo Kawabe, and Yoshinobu Aoyagi

Appl. Phys. Lett. 35, 628 (1979); http://dx.doi.org/10.1063/1.91231 (3 pages) | Cited 5 times

Online Publication Date: 7 August 2008

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By measuring the time‐dependent optical reflectivity, we have investigated the dynamic behavior of annealing with the 30‐psec pulse train of a mode‐locked Nd : YAG laser. It was first observed that at narrow ranges of high laser energy density, the reflectivity of implanted Si and GaAs increases slowly to the level consistent with liquid ones, except GaP, and remains at that level for a period less than 200 nsec. As to Si, the mode‐locked laser is confirmed to have a weak effect on temperature rise and, therefore, to produce a thin molten layer compared to Q‐switched Nd : YAG lasers.
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61.72.U- Doping and impurity implantation
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Pulse electron annealing of ion‐implanted InP

D. Eirug Davies, J. P. Lorenzo, T. G. Ryan, and J. J. Fitzgerald

Appl. Phys. Lett. 35, 631 (1979); http://dx.doi.org/10.1063/1.91232 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Pulsed electron beam annealing has been used to activate high‐dose silicon implants in InP. Peak concentrations ≳ 1019 cm−3 are obtained without any appreciable carrier freezeout on cooling to 78 °K. Such activation is comparable to that obtained on thermal annealing and is seen on samples implanted at both room temperature (amorphous) and 200 °C. In common with the behavior reported for GaAs, the mobility is similarly curtailed below thermally annealing values. Though the initial polished appearance is generally retained, unusual thermal oxidation and anodization properties suggest the possibility of surface phosphorous loss.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

cw Ar+ laser annealing of optically active impurities in nitrogen‐implanted AlxGa1−xAs (x=0.58)

Yunosuke Makita, Masaki Yokota, Hidetoshi Nojiri, Toshio Tsurushima, Hisao Tanoue, Toshihiko Kanayama, and Jun‐ichi Shimada

Appl. Phys. Lett. 35, 633 (1979); http://dx.doi.org/10.1063/1.91233 (4 pages) | Cited 2 times

Online Publication Date: 7 August 2008

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Laser annealing of nitrogen implanted AlxGa1−xAs was carried out by using an Ar+ laser. A reliable and well‐controlled annealing was performed with threshold power density of the order of 105 W/cm2. Photoluminescence (PL) characteristics show that laser annealing is superior to thermal annealing in terms of PL intensities and the absence of deep levels. New emission bands were obtained at the intermediate power density of the laser, which were never obtained in thermal annealing.
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61.80.-x Physical radiation effects, radiation damage
61.72.U- Doping and impurity implantation
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Carrier recombination through donors/acceptors in heavily doped silicon

Chenming Hu and William G. Oldham

Appl. Phys. Lett. 35, 636 (1979); http://dx.doi.org/10.1063/1.91234 (4 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10−20 cm2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low‐temperature capture cross sections reported for shallow dopants.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.-i Impurity and defect levels

A new sensitive microwave bolometer heterodyne receiver

G. Nimtz, B. Schlicht, H. Lehmann, and E. Tyssen

Appl. Phys. Lett. 35, 640 (1979); http://dx.doi.org/10.1063/1.91235 (2 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Some narrow‐gap mixed crystal semiconductors show a magnetic field induced transport anomaly at low temperatures. The anomaly is accompanied by a transition from a low to a high resistivity state, which in turn causes a strongly nonlinear I‐V characteristic. We have investigated microwave mixing near such a phase transition in n‐type Hg0.8Cd0.2Te with a frequency of 37 GHz at 1.5 K and in magnetic fields up to 8.5 T. The sensitivity characteristic was measured and the responsivity determined to be about 15 times higher than that of a hot‐carrier InSb bolometer. The time resolution of this new bolometer (=10−7 s) was slightly better than in InSb.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.20.My Galvanomagnetic and other magnetotransport effects
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