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1 Nov 1979

Volume 35, Issue 9, pp. 651-721

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Laser enhanced electroplating and maskless pattern generation

R. J. von Gutfeld, E. E. Tynan, R. L. Melcher, and S. E. Blum

Appl. Phys. Lett. 35, 651 (1979); http://dx.doi.org/10.1063/1.91242 (3 pages) | Cited 47 times

Online Publication Date: 7 August 2008

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Maskless plating has been achieved through a new technique that utilizes a cw or pulsed laser, focused onto an electrode in an electroplating bath. In the region of optical absorption on the cathode, plating enhancement rates on the order of 103 occur for optical power densities on the order of 104 W/cm2. Laser scanning produces a plating pattern along the scanning path. A qualitative theory based on convective mass transport is used to explain the results.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
44.25.+f Natural convection
47.27.-i Turbulent flows
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Near‐equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers

R. J. Nelson

Appl. Phys. Lett. 35, 654 (1979); http://dx.doi.org/10.1063/1.91243 (3 pages) | Cited 28 times

Online Publication Date: 7 August 2008

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The growth of In1−xGaxAsyP1−y double heterostructure (DH) laser material by liquid phase epitaxy (LPE) under near‐equilibrium growth conditions which produce small growth rates is described. Broad‐area threshold current densities for this material are as low as 670 A/cm2 for 0.1‐μm active layers which is the lowest value yet reported for this material system. This value is comparable with the best reported value for LPE Ga1−xAlxAs with a similar refractive index step. For comparison, material grown at higher growth rates using the commonly employed two‐phase and supercooling techniques are found to give consistently higher threshold current densities than those grown under near‐equilibrium conditions in the same LPE system. The spontaneous luminescence observed in window lasers grown by the near‐equilibrium method appears uniform with no evidence of dark absorbing regions which could cause self‐pulsations in the laser output during initial operation.
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42.55.Px Semiconductor lasers; laser diodes
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Fq Growth from melts; zone melting and refining

Detection of ferromagnetic resonance by photoacoustic effect

O. A. Cleves Nunes, A.M.M. Monteiro, and K. Skeff Neto

Appl. Phys. Lett. 35, 656 (1979); http://dx.doi.org/10.1063/1.91244 (3 pages) | Cited 14 times

Online Publication Date: 7 August 2008

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By exploring the simple periodic heat‐flux principle of the photoacoustic cell we propose and demonstrate experimentally the usefulness of the photoacoustic cell for studying the ferromagnetic resonance. An interesting feature of this technique is that it offers special advantages over conventional spectroscopic methods used in ferromagnetic resonance because of the simplicity of measurements. An application is made for the case of an iron thin foil.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys

Optical bistability and signal amplification in a semiconductor crystal: applications of new low‐power nonlinear effects in InSb

D.A.B. Miller, S. D. Smith, and A. Johnston

Appl. Phys. Lett. 35, 658 (1979); http://dx.doi.org/10.1063/1.91245 (3 pages) | Cited 125 times

Online Publication Date: 7 August 2008

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We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry‐Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity‐dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth‐order interference, the first such observation above first order in an intrinsic, one‐element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’
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42.65.-k Nonlinear optics

Coherent optical image amplification by an injection‐locked dye amplifier at 632.8 nm

Robert Akins and Sing Lee

Appl. Phys. Lett. 35, 660 (1979); http://dx.doi.org/10.1063/1.91246 (4 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Coherent amplification of images illuminated by the 632.8‐nm radiation of He‐Ne has been successfully demonstrated using a two‐stage injection‐locked pulsed dye amplifier technique. A gain of three times has been measured using Cresyl Violet 620 and Rhodamine B in ethanol, while maintaining signal bandwidth, relative phase, and direction, over a one‐quarter μs pulse duration. A space bandwidth product of 500 000 was obtained by incorporation of the image amplifier into an optical image processing system.
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42.30.Va Image forming and processing
42.55.Mv Dye lasers

Backward Raman compression of XeCl laser pulse in Pb vapor

N. Djeu

Appl. Phys. Lett. 35, 663 (1979); http://dx.doi.org/10.1063/1.91247 (3 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Pulse compression has been observed for the spontaneously generated backward Raman wave in Pb vapor pumped by the XeCl laser. A compression factor in excess of 6.7 was observed with a photon efficiency of 42%.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications

Efficient infrared ac Kerr switches using simple cryogenic liquids

S. R. J. Brueck and Helge Kildal

Appl. Phys. Lett. 35, 665 (1979); http://dx.doi.org/10.1063/1.91248 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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An efficient ac Kerr switch for the transfer of temporal pulse shapes between the visible and infrared spectral regions has been constructed using liquid O2. Employing group velocity matching techniques, this switch, which is applicable throughout the infrared, has ultimate switching speeds of 0.1–0.3 ps.
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42.65.-k Nonlinear optics
78.20.Fm Birefringence
42.25.Lc Birefringence
78.30.C- Liquids

The scope of effective medium theory for fine metal particle solar absorbers

G. B. Smith

Appl. Phys. Lett. 35, 668 (1979); http://dx.doi.org/10.1063/1.91249 (3 pages) | Cited 25 times

Online Publication Date: 7 August 2008

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The treatment of an array of small metal particles as a continuous effective medium is shown to be possible for visible and near infrared frequencies at much larger particle sizes and separations than often supposed. Specific upper limits are evaluated for chromium. Results are based on the strongly correlated model. For this, the usual topology, variation, and attenuation of the field strength over average unit cell dimensions are permissible, provided such variations are characteristic of the effective medium as a whole. As wavelength decreases, the leading contribution to diffuse scattering off such composite films should come from terms proportional to λ−8 not the Rayleigh term.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.90.+c Other topics in materials science (restricted to new topics in section 81)
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.25.Dd Wave propagation in random media

A new thin‐film electroluminescent material—ZnF2 : Mn

D. C. Morton and F. E. Williams

Appl. Phys. Lett. 35, 671 (1979); http://dx.doi.org/10.1063/1.91240 (2 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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Both ac and dc orange (580 nm) electroluminescence (EL) are reported for thin films of ZnF2 : Mn sandwiched between SiO semi‐insulating films. All layers are formed by vacuum evaporation and no postdeposition annealing is required. Unique power input and efficiency‐vs‐frequency characteristics are observed, in part due to the 0.1‐s lifetime of excited Mn in ZnF2; hysteresis in the brightness‐voltage characteristic occurs. The brightness and power efficiency are found to be, respectively, 10 f L and 0.5% under suitable operating conditions.
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78.60.Fi Electroluminescence
78.20.Jq Electro-optical effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.22.Ej Polarization and depolarization

Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy

W. T. Tsang, C. Weisbuch, R. C. Miller, and R. Dingle

Appl. Phys. Lett. 35, 673 (1979); http://dx.doi.org/10.1063/1.91241 (3 pages) | Cited 50 times

Online Publication Date: 7 August 2008

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Low‐current‐threshold room‐temperature injection GaAs‐AlxGa1−xAs multi‐quantum‐well (MQW) lasers have been prepared by molecular beam epitaxy. Under pulsed current injection, lasing emission attributed to the n=1 electron‐to‐light‐hole (1 e‐lh) confined‐particle transition was observed at threshold. Above threshold, lasing emission involving the n=1 electron‐to‐heavy‐hole transition (1 e−hh) became dominant. Single longitudinal mode operation has also been observed for these broad‐area MQW lasers. For heat‐sink temperatures between 8 and 100 °C, the lasing current threshold Ith for the 1 e−hh transition has an exponential variation with temperature of the form Ith∝ exp(T/T0), where T0=230 °K.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Annular discharge copper vapor laser

T. Kan, D. Ball, E. Schmitt, and J. Hill

Appl. Phys. Lett. 35, 676 (1979); http://dx.doi.org/10.1063/1.91250 (2 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A large‐volume high‐power copper vapor laser excited by a longitudinal discharge in an annular volume has been demonstrated. The annular geometry provides a device configuration in which the laser prf, governed by a geometric diffusion length, can be made independent of the device volume. Laser powers of 35 W at a prf of 6 kHz has been obtained with an overall device efficiency of 0.44%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Improved temperature stability in SAW resonator filters using multiple coupling paths

L. A. Coldren

Appl. Phys. Lett. 35, 678 (1979); http://dx.doi.org/10.1063/1.91251 (3 pages)

Online Publication Date: 7 August 2008

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An extension of the interfering delay path concept, put forth by Browning and Lewis, is used to provide temperature compensation within a class of two‐section SAW resonator filters without adding significantly to to filter complexity. An example calculation shows that the temperature range ΔT for ±1° phase stability can be increased by threefold over the ΔT range provided by conventional filters on ST‐X quartz. Design equations are given.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.35.Pt Surface waves in solids and liquids
43.20.Ks Standing waves, resonance, normal modes
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Observation of stimulated Brillouin backscatter saturation in an underdense plasma for long CO2 laser pulses

Z. A. Pietrzyk and T. N. Carlstrom

Appl. Phys. Lett. 35, 681 (1979); http://dx.doi.org/10.1063/1.91252 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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Experimental evidence of low saturation levels of stimulated Brillouin backscatter from a magnetically confined, underdense, CO2 laser heated plasma is reported. Simple arguments are given to suggest an explanation for the saturation levels observed. A comparison with other experiments suggests that the focusing system of the incident laser beam may influence the saturation level of the backscattered radiation.
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52.50.Gj Plasma heating by particle beams
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Dynamic response of a cw laser‐produced Cs plasma to laser modulations

A. C. Tam

Appl. Phys. Lett. 35, 683 (1979); http://dx.doi.org/10.1063/1.91253 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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We present a first experimental investigation of the response of a continuous laser‐produced Cs plasma to weak modulation of the laser beam. The cw dye laser beam at 6010.49 Å, of ∼0.1 W power, excites the Cs (6P1/2→8D3/2) atomic transition in the present study. At low modulation frequency, the fractional modulation of the transmitted laser beam is greatly reduced from that of the incident beam. At high modulation frequency, the two fractional modulations are nearly equal. We also demonstrate that the normal amplitude fluctuation of the laser beam is greatly reduced after transmission through the plasma. These features of the dynamic response are explained in a simple rate equation analysis.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.60.Fc Modulation, tuning, and mode locking

Polycrystalline silicon by glow discharge technique

F. Morin and M. Morel

Appl. Phys. Lett. 35, 686 (1979); http://dx.doi.org/10.1063/1.91254 (2 pages) | Cited 12 times

Online Publication Date: 7 August 2008

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Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450 °C.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Electric field induced bend‐undulation instability in a ferroelectric smectic C

Noel A. Clark

Appl. Phys. Lett. 35, 688 (1979); http://dx.doi.org/10.1063/1.91255 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2008

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A new electric field induced mechanical instability of a single domain ferroelectric smectic C liquid is proposed. Threshold conditions and small and large field limits are discussed.
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61.30.Jf Defects in liquid crystals
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes

N. T. Gordon, M. D. Ryal, and J. W. Allen

Appl. Phys. Lett. 35, 691 (1979); http://dx.doi.org/10.1063/1.91256 (2 pages) | Cited 8 times

Online Publication Date: 7 August 2008

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Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS’s described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105 V cm−1.
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77.22.Ch Permittivity (dielectric function)
78.60.Fi Electroluminescence

The growth of a GaAs VPE layer with an abrupt doping profile

J. Komeno and S. Ohkawa

Appl. Phys. Lett. 35, 693 (1979); http://dx.doi.org/10.1063/1.91257 (3 pages) | Cited 1 time

Online Publication Date: 7 August 2008

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A technique for achieving the growth of GaAs VPE layers with a highly abrupt doping profile is described. With this technique, the steepness of doping profile is remarkably improved and typical interface widths for the drop in carrier concentration from 1×1016 to 1×1015 cm−3 are 1000 Å. This technique also permits the growth of GaAs VPE layers with multistructure having a periodic Lo‐Hi carrier concentration profile.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Bk Growth from vapor
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Isoelectronic traps in GaAs0.6P0.4 by nitrogen implantation and CO2‐laser annealing

M. Takai and H. Ryssel

Appl. Phys. Lett. 35, 696 (1979); http://dx.doi.org/10.1063/1.91258 (3 pages) | Cited 9 times

Online Publication Date: 7 August 2008

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A continuous CO2 laser was used for the first time to anneal the damage in GaAs0.6P0.4 induced during nitrogen implantation and to create nitrogen isoelectronic traps. Laser‐annealed samples showed isoelectronic signals which are by a factor of 6–7 stronger as compared with thermally annealed samples. The intensity of the nitrogen‐induced emission from the laser‐annealed samples was up to 50% higher than that of the near‐band‐gap emission from the starting material.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
78.40.Fy Semiconductors

Implantation of shallow impurities in Cr‐doped semi‐insulating GaAs

P. N. Favennec and H. L’Haridon

Appl. Phys. Lett. 35, 699 (1979); http://dx.doi.org/10.1063/1.91259 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2008

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Zinc and selenium implantations have been performed in Cr‐doped semi‐insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900 °C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr‐depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Laser annealing of self‐ion damaged silicon

G. Foti, S. U. Campisano, P. Baeri, E. Rimini, and W. F. Tseng

Appl. Phys. Lett. 35, 701 (1979); http://dx.doi.org/10.1063/1.91260 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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Partially damaged self‐ion implanted Si(100) has been irradiated by a ruby laser pulse (λ=0.69 μm, tp=15 ns). Channeling effect technique measurements and TEM micrographs show the reordering of the implanted layer in the laser energy range 1.5–2.5 J/cm2. No polycrystalline transition has been detected. Calculations in terms of local melting of the disordered zone explain the experimental data.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Self‐diffusion in silicon as probed by the ( p,γ) resonance broadening method

J. Hirvonen and A. Anttila

Appl. Phys. Lett. 35, 703 (1979); http://dx.doi.org/10.1063/1.91261 (3 pages) | Cited 32 times

Online Publication Date: 7 August 2008

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The self‐diffusion preexponential factor D0=8.0 cm2/s and activation energy Q=4.1 eV for intrinsic silicon have been determined with the ( p,γ) resonance broadening method in the temperature region 900–1100 °C, in a first application of this method to self‐diffusion measurements. Its suitability was tested by extending the self‐diffusion measurements to lower temperatures than those performed with other methods.
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66.30.H- Self-diffusion and ionic conduction in nonmetals

Thermally induced accumulation of silicon on palladium silicide surfaces as studied by Auger electron spectroscopy

K. Oura, S. Okada, and T. Hanawa

Appl. Phys. Lett. 35, 705 (1979); http://dx.doi.org/10.1063/1.91262 (2 pages) | Cited 18 times

Online Publication Date: 7 August 2008

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A clean surface of a palladium silicide grown on a Si(111) plane has been studied by Auger electron spectroscopy. Heat treatment of the silicide in the temperature range 250–600 °C causes the accumulation of a thin layer of elementary Si over its surface. The accumulated thickness has been estimated to be about 3 Å and does not depend on heating temperatures and periods examined.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Efficiency of quantum‐utilizing solar energy converters in the absence of intraband thermalization

Robert T. Ross

Appl. Phys. Lett. 35, 707 (1979); http://dx.doi.org/10.1063/1.91263 (2 pages) | Cited 4 times

Online Publication Date: 7 August 2008

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In some photoelectrical and photochemical devices, energy conversion may occur before thermal equilibrium within the electronic bands of the absorber. A statistical thermodynamic argument shows that such hot‐transfer devices cannot have an efficiency greater than that of an ideal device in which thermalization precedes energy conversion.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
82.50.-m Photochemistry
82.60.-s Chemical thermodynamics

Grain boundary states and varistor behavior in silicon bicrystals

C. H. Seager and G. E. Pike

Appl. Phys. Lett. 35, 709 (1979); http://dx.doi.org/10.1063/1.91264 (3 pages) | Cited 79 times

Online Publication Date: 7 August 2008

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See Also: Erratum

Show Abstract
The energy density of states in a Si grain boundary has been quantitatively determined for the first time. Since the deconvolution scheme used in this determination is a technique previously unapplied to real materials, the applicability of the model and the validity of the results were experimentally verified by comparing conductance and capacitance data. Additionally, a high‐voltage varistor characteristic (highly non‐Ohmic current) was observed. This shows for the first time that a simple grain boundary without intergranular additives is capable of a strong varistor behavior (nonlinearity coefficient α≳20).
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
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