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1 Nov 1979

Volume 35, Issue 9, pp. 651-721

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High‐speed InP optoelectronic switch

F. J. Leonberger and P. F. Moulton

Appl. Phys. Lett. 35, 712 (1979); http://dx.doi.org/10.1063/1.91265 (3 pages) | Cited 32 times

Online Publication Date: 7 August 2008

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The successful fabrication and demonstration of an InP optoelectronic switch is reported. The results obtained suggest that this device may be better suited for high‐speed analog signal processing applications than previously reported Si and GaAs switches. In experiments using cw mode‐locked lasers, the switches have exhibited an on‐state impedance of 45 Ω for 40pJ of incident laser energy and an inherent rise time of 30 psec. In addition, the switches have been used to generate a train of 70‐psec‐wide pulses at a 900‐MHz repetition rate, and to sample a 68.9‐MHz sine wave at 275 MS/sec with an accuracy to 0.2 dB (98%) and an on‐off ratio of 40 dB.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
84.40.-x Radiowave and microwave (including millimeter wave) technology
42.60.-v Laser optical systems: design and operation

In situ multifilamentary superconducting wires fabricated using a controlled high‐temperature gradient

J. L. Fihey, M. Neff, R. Roberge, M. C. Flemings, S. Foner, and B. B. Schwartz

Appl. Phys. Lett. 35, 715 (1979); http://dx.doi.org/10.1063/1.91239 (3 pages) | Cited 3 times

Online Publication Date: 7 August 2008

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A 0.64‐cm‐diam. Cu‐Nb composite rod was continuously melted at 1800 °C, then resolidified in a controlled large temperature gradient (∼ 400 °C/cm) to produce a microstructure of aligned [directionally solidified, (DS)] dendrites in a copper matrix. Primary dendrite arm sizes of ∼50, 20, and 10 μm were measured for growth rates of 5.6×10−4, 1.7×10−2, and 0.11 cm/sec, respectively. Higher growth rates produced an equiaxed structure typical of chill casting. After processing, the overall Jc of the DS wires and the effect of stress on Jc were comparable to those of chill‐cast specimens. The atomic fraction of Nb converted to Nb3Sn increased with decreasing filament size, and Tc was approximately 17.6 K for the DS alloys.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
62.20.-x Mechanical properties of solids

A superconducting sampler for Josephson logic circuits

C. A. Hamilton, F. L. Lloyd, R. L. Peterson, and J. R. Andrews

Appl. Phys. Lett. 35, 718 (1979); http://dx.doi.org/10.1063/1.91266 (2 pages) | Cited 10 times

Online Publication Date: 7 August 2008

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A method is described for automating a technique which is used to sample transition duration (rise time) in superconducting logic circuits. The method is based on measuring the time at which a biased Josephson junction switches under the influence of an applied signal. The system transition duration is limited primarily by time jitter which is estimated to be 7 ps. Transition durations of as little as 9 ps have been observed.
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74.50.+r Tunneling phenomena; Josephson effects

Multiple‐quantum interference superconducting analog‐to‐digital converter

Richard E. Harris, C. A. Hamilton, and Frances L. Lloyd

Appl. Phys. Lett. 35, 720 (1979); http://dx.doi.org/10.1063/1.91238 (2 pages) | Cited 7 times

Online Publication Date: 7 August 2008

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Multiple‐quantum interference in a superconducting interferometer is used for analog‐to‐digital conversion. The simple fully parallel four‐bit converter which is described is the first known use of this effect in a digital circuit. Sampling rates of 2×108 per second were achieved, and much higher rates appear possible.
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06.60.Jn High-speed techniques (microsecond to femtosecond)
74.50.+r Tunneling phenomena; Josephson effects
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.07.-a General equipment
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