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15 Jun 1980

Volume 36, Issue 12, pp. 943-1014

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Lifetime extension of XeCl and KrCl lasers with additives

T. J. McKee, D. J. James, W. S. Nip, R. W. Weeks, and C. Willis

Appl. Phys. Lett. 36, 943 (1980); http://dx.doi.org/10.1063/1.91658 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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The stabilization and extension of operation of XeCl (308 nm) and KrCl (222 nm) excimer lasers by the addition of very low concentrations of hydrogen gas is described. Lifetime extension of a sealed‐off XeCl laser operating at 8 W and 150 Hz is reported, with more than three million shots to half power. Spectroscopic analysis of the laser gas indicates a large reduction in a discharge‐induced absorption feature below 230 nm; no absorption is observed at 308 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Raman spectroscopy of surface oxides at elevated temperatures

R. L. Farrow and A. S. Nagelberg

Appl. Phys. Lett. 36, 945 (1980); http://dx.doi.org/10.1063/1.91659 (3 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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Backscattering Raman spectroscopy is demonstrated to be a useful technique for in situ characterization of oxide films on metals at high temperatures. Data obtained during oxidation at temperatures between 300 and 850 °C are presented for two different iron‐based alloys. The sensitivity and specificity of the technique were sufficient to detect the formation of iron oxide films (Fe2O3 and Fe3O4) less than 150 Å in thickness at temperatures below 350 °C. Above 600 °C, the predominant oxide was Cr2O3; however, the presence of a few weight percent Mn in a commercial alloy produced a mixed spinel oxide in addition to Cr2O3.
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78.30.-j Infrared and Raman spectra
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Effect of neutron irradiation on the pulse dispersion in a step‐index optical fiber

R. Rao and S. S. Mitra

Appl. Phys. Lett. 36, 948 (1980); http://dx.doi.org/10.1063/1.91660 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Neutron‐radiation‐induced pulse dispersion changes were measured in a 100‐μ step‐index fiber. These results are presented with a discussion of mechanisms by which dispersion changes due to radiation can occur. The results also give information on the radiation‐induced attentuation in fibers.
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42.81.-i Fiber optics
61.80.Hg Neutron radiation effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.70.-g Interactions of particles and radiation with matter

Computer modelling study of ablative optical recording

M. S. Cohen

Appl. Phys. Lett. 36, 950 (1980); http://dx.doi.org/10.1063/1.91661 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Computer modelling is used to study both the optical and thermal behavior of ablative optical storage media which consist of antireflection structures incorporating a thin active layer. Confirmation is given of Blom’s contention that the advantages of improved optical efficiency gained by use of antireflection structures can be lost by heat losses to the mirror layer underlying the active layer. However, this efficiency can be regained if the dielectric spacer between these two layers is made thick enough or has sufficiently low thermal conductivity.
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61.80.-x Physical radiation effects, radiation damage
79.20.Ds Laser-beam impact phenomena

Photoacoustic microscopy of an integrated circuit

L. D. Favro, P. K. Kuo, J. J. Pouch, and R. L. Thomas

Appl. Phys. Lett. 36, 953 (1980); http://dx.doi.org/10.1063/1.91662 (2 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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The in‐phase and quadrature components of a photoacoustic signal have been used to form images of an integrated circuit with ∼6 μm resolution. These photoacoustic images contain information about subsurface properties of the sample.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Electro‐optic frequency‐ and polarization‐modulated injection laser

F. K. Reinhart and R. A. Logan

Appl. Phys. Lett. 36, 954 (1980); http://dx.doi.org/10.1063/1.91380 (4 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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A novel class of frequency‐ and polarization‐modulated GaAs‐AlxGa1−xAs double‐heterojunction lasers is described. The lasers are formed by the monolithical integration of an optical amplifier, an electro‐optic polarization modulator, and a polarizer. Frequency modulation of 20 Å/V and polarization rotation of 40° has been achieved by the linear electro‐optic effect.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects

Optical emission from Ga ionization at a field emitter

Young Kuk, T. Sakurai, R. J. Culbertson, and G. H. Robertson

Appl. Phys. Lett. 36, 957 (1980); http://dx.doi.org/10.1063/1.91381 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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When gallium is ionized on the cap of a field emitter, the optical emission emerges from right at the cap of the emitter. This optical emission was spectroscopically studied using an optical multichannel analyzer with a resolution of 1.3 Å over the range 1850–6500 Å.The dominant emission is due to Ga I radiation and is likely due to the two‐body collision between atomic gallium and electrons.
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79.70.+q Field emission, ionization, evaporation, and desorption
79.20.Kz Other electron-impact emission phenomena
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
29.25.-t Particle sources and targets

Theoretical model of an optoacoustic detector

Jitendra P. Gupta and Rajendra N. Sachdev

Appl. Phys. Lett. 36, 960 (1980); http://dx.doi.org/10.1063/1.91382 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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It has been reported from experimental observations that a pressure pulse generated in a gas column by absorption of infrared radiation having a chopping frequency coincident with the natural resonant frequency of the gas column is independent of the chopping rate. A theoretical proof for this is given here by extending the theory of operational characteristics of a pneumatic detector derived earlier.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.07.Mp Transducers
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Analysis of the dark film in rf‐excited mercury lamps

P. A. Heimann and J. H. Simpson

Appl. Phys. Lett. 36, 963 (1980); http://dx.doi.org/10.1063/1.91383 (2 pages)

Online Publication Date: 23 July 2008

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The dark film which forms in some rf‐excited mercury discharge lamps has been characterized using several analytic techniques. This film is about one micron thick, and contains only mercury, silicon, oxygen, and possibly hydrogen. Several models for the physical and chemical nature of this film are presented and are compared with the experimental results. A mechanism for film growth is proposed.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

Exploding‐pusher‐tamper areal density measurement by neutron activation

E. Michael Campbell, William M. Ploeger, Peter H. Lee, and Stephen M. Lane

Appl. Phys. Lett. 36, 965 (1980); http://dx.doi.org/10.1063/1.91384 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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Neutron activation of 28Si nuclei was used to measure the areal density ρΔR of a silicate‐glass tamper of a laser‐driven exploding‐pusher target. The values found were in good agreement with complex computer codes and an empirically based scaling model. This is the first demonstration of a technique that will be used in diagnosing the compression of high‐density inertial confinement fusion targets.
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25.40.Fq Inelastic neutron scattering
42.62.-b Laser applications
82.30.-b Specific chemical reactions; reaction mechanisms
52.70.-m Plasma diagnostic techniques and instrumentation

A model for the width dependence of electromigration lifetimes in aluminum thin‐film stripes

E. Kinsbron

Appl. Phys. Lett. 36, 968 (1980); http://dx.doi.org/10.1063/1.91385 (3 pages) | Cited 76 times

Online Publication Date: 23 July 2008

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Aluminum thin‐film conductors with a variety of linewidths (1–8 μ) were stressed at high temperature (200 °C) and high current density (2×106 A cm−2) to determine the dependence on the linewidth of the time to failure due to electromigration. A new model is based on consideration of the film microstructure and the presence of a stress‐induced countercurrent flow of matter in short thin films during passage of electrical current. The model can explain the increase in lifetime observed in stripes with linewidths below 2 μm.
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68.60.-p Physical properties of thin films, nonelectronic
66.30.-h Diffusion in solids

The optical band gap of hydrogenated amorphous‐boron thin films: The effect of thermal treatment

Franklin H. Cocks, Phillip L. Jones, and Louis J. Dimmey

Appl. Phys. Lett. 36, 970 (1980); http://dx.doi.org/10.1063/1.91386 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Hydrogenated amorphous‐boron thin films produced by glow‐discharge decomposition of a gas mixture of 3.1 vol. % diborane and 96.9 vol. % hydrogen have been heat treated at 360 and 400 °C. The resulting absorption coefficients and optical band gaps have been measured as a function of heat‐treatment time and temperature. Both the absorption coefficients and the optical band gaps of these films can be drastically changed by such treatments. Thermal treatment at 400 °C for 200 h results in a systematic decrease in the optical band gap from 2.19 to 0.90 eV. From quantitative hydrogen analyses it is shown that hydrogen evolution during heating plays a strong role in reducing the apparent optical band gap. These results indicate that it might be possible to optimize theoretical amorphous‐boron thin films through the tailoring of the optical band gap by such thermal treatment.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
75.20.Ck Nonmetals

Measurements of heat transfer in microemulsions by laser‐induced thermal blooming

J. R. Lalanne, E. Sein, J. Buchert, and S. Kielich

Appl. Phys. Lett. 36, 973 (1980); http://dx.doi.org/10.1063/1.91387 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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In this letter, we describe a variation of the well‐known thermal blooming technique used for the measurement of the thermal conductivity in fluids. An IR microsecond laser pulse is used to develop the thermal effect. The decay of the thermal lens is analyzed by a cw nonabsorbed auxiliary wave. This dual‐beam technique is for the first time used for studying selective heat transfer in microemulsions.
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42.62.-b Laser applications
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
79.20.Ds Laser-beam impact phenomena

Dislocation motion and solid‐state turbulence

C. Herring and B. A. Huberman

Appl. Phys. Lett. 36, 975 (1980); http://dx.doi.org/10.1063/1.91388 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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We show that, under suitable conditions, the dynamics of crystal dislocations in the presence of acoustic fields can lead to chaotic behavior. We suggest experiments involving the motion of straight dislocation segments against Peierls‐Nabarro forces and the optical modes of partials and discuss the detection of the turbulent regime.
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62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Lk Linear defects: dislocations, disclinations

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Ernesto H. Perea, Emilio E. Mendez, and Clifton G. Fonstad

Appl. Phys. Lett. 36, 978 (1980); http://dx.doi.org/10.1063/1.91389 (3 pages) | Cited 56 times

Online Publication Date: 23 July 2008

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We report the first systematic measurement of the electroreflectance spectra of InuGa1−uPvAs1−v over the range of compositions that lattice‐match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m∗/m0 have been used to predict the values of the g factors for these compounds.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.20.Jq Electro-optical effects

Hydrogen‐ion bombardment of GaAs

K. Steeples, G. Dearnaley, and A. M. Stoneham

Appl. Phys. Lett. 36, 981 (1980); http://dx.doi.org/10.1063/1.91390 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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Gallium arsenide has been subjected to bombardment by protons, deuterons, and tritons, and the electrical carrier‐removal effects have been investigated. Deuteron bombardment gives vastly more efficient carrier removal than either proton or triton bombardment, and with better thermal stability. A model, based upon nonradiative recombination‐enhanced defect reactions, is presented to explain this effect.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
72.80.Ey III-V and II-VI semiconductors

Anomalous stress in thermal oxide of polycrystalline Si

A. Shintani and H. Nakashima

Appl. Phys. Lett. 36, 983 (1980); http://dx.doi.org/10.1063/1.91391 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The thermal oxide of polycrystalline Si (poly‐Si oxide) is found to be under a compressive stress two or more times larger than the stress in the thermal oxide of single‐crystalline Si (single‐Si oxide). The stress in poly‐Si oxide depends largely on poly‐Si growth temperature, oxidation temperature, and oxide thickness, especially for oxides less than 200 nm thick. The surface valleys formed at poly‐Si grain boundaries relate to this phenomena. The behavior of stress variations with oxide thickness is not substantially affected by oxidation temperature. The temperature dependence (room temperature to 800 °C) of stress in poly‐Si oxide is similar to that in single‐Si oxide. Consequently, the large stress generation in poly‐Si oxide is not due to oxide characteristics but to poly‐Si surface morphological conditions.
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68.60.-p Physical properties of thin films, nonelectronic
65.40.De Thermal expansion; thermomechanical effects
62.20.F- Deformation and plasticity
46.35.+z Viscoelasticity, plasticity, viscoplasticity

Semiconducting properties of amorphous V2O5 layers deposited from gels

J. Bullot, O. Gallais, M. Gauthier, and J. Livage

Appl. Phys. Lett. 36, 986 (1980); http://dx.doi.org/10.1063/1.91392 (3 pages) | Cited 51 times

Online Publication Date: 23 July 2008

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Colloidal solutions of amorphous V2O5 are used for preparing semiconducting layers. Reasons for the high measured conductivity (σ≃0.8–1.0 Ω−1 cm−1) are discussed. The temperature dependence of σ is analyzed in terms of a temperature‐dependent activation‐energy model based upon the assumption of a random distribution of the distances between hopping sites.
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72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Incorporation of boron during the growth of GaAs single crystals

C. G. Hopkins, V. R. Deline, R. J. Blattner, C. A. Evans, and T. J. Magee

Appl. Phys. Lett. 36, 989 (1980); http://dx.doi.org/10.1063/1.91393 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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A study of GaAs prepared by conventional Bridgman techniques and by liquid‐encapsulated Czochralski methods reveals that only small amounts of boron are incorporated from the boric oxide encapsulant. When a pyrolytic boron nitride crucible is used, there is a 100‐fold increase in the amount of incorporated boron, suggesting some decomposition of the boron nitride.
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81.10.Fq Growth from melts; zone melting and refining
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Improved characterization of the Si‐SiO2 interface

P. Su, A. Sher, Y. H. Tsuo, J. A. Moriarty, and W. E. Miller

Appl. Phys. Lett. 36, 991 (1980); http://dx.doi.org/10.1063/1.91394 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Refined quasistatic and conductance methods, based on effectively thin composite insulating layers, low‐carrier‐concentration bulk semiconductors, and low‐level illumination, have been applied to an improved characterization of the (100) Si‐SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (1010–1014 states/eV cm2) on a single sample. The normal U‐shaped density of states is here resolved into separate valence‐ and conduction‐band‐derived contributions as well as impurity‐derived contributions corresponding to concentrations on the order of 20 ppm at the interface.
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73.40.-c Electronic transport in interface structures
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs

J. S. Williams and M. W. Austin

Appl. Phys. Lett. 36, 994 (1980); http://dx.doi.org/10.1063/1.91656 (3 pages) | Cited 49 times

Online Publication Date: 23 July 2008

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Glancing‐angle Rutherford backscattering and channeling techniques have been used to investigate the regrowth of Ar+‐ion‐implanted amorphous layers on (100) GaAs. Under carefully controlled implant conditions, amorphous GaAs layers can be recrystallized epitaxially at temperatures below 250 °C. However, the regrowth process is complex, with the crystalline quality and regrowth rate most dependent on implant dose.
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68.55.-a Thin film structure and morphology
61.80.-x Physical radiation effects, radiation damage
61.72.U- Doping and impurity implantation

Uphill diffusion mechanism in proton-irradiated silicon

Yasumitsu Morikawa, Keiichi Yamamoto, and Koichi Nagami

Appl. Phys. Lett. 36, 997 (1980); http://dx.doi.org/10.1063/1.91667 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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Uphill diffusion of boron or phosphorus in silicon due to high-temperature proton irradiation is explained by a proposed model in which a vancancy mechanism is assumed. The results calculated from the model show good agreement with the experimentally measured profiles, and some physical parameters can be estimated. A significant feature of the proposed model is that Fick’s law is included as a special case.
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66.30.Dn Theory of diffusion and ionic conduction in solids
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Fluorine‐enhanced plasma growth of native layers on silicon

R. P. H. Chang, C. C. Chang, and S. Darack

Appl. Phys. Lett. 36, 999 (1980); http://dx.doi.org/10.1063/1.91657 (4 pages) | Cited 24 times

Online Publication Date: 23 July 2008

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Fluorine‐enhanced low‐temperature (⩽600 °C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine‐enhanced‐plasma‐grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Photoionization cross section and density of interface states in MOS structures

D. W. Greve and W. E. Dahlke

Appl. Phys. Lett. 36, 1002 (1980); http://dx.doi.org/10.1063/1.91663 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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We have measured the electron photoionization cross section and the interface state density in MOS capacitors of two different oxide thicknesses. In both cases good agreement is obtained between optical and nonoptical measurements of the interface state density, and an increase of the state density toward the conduction band is observed. The photoionization cross section increases monotonically with photon energy and also with trap energy increasing from midgap to the conduction band. This behavior is quite different from that observed for bulk states.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
78.20.Jq Electro-optical effects

Generation and measurement of ultrashort current pulses with Josephson devices

Sadeg M. Faris

Appl. Phys. Lett. 36, 1005 (1980); http://dx.doi.org/10.1063/1.91664 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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Experimental demonstration of an ultrashort‐pulse generator and a novel sampling technique to measure its pulse shape is reported. The pulse generator, which uses Josephson interferometers, is designed to be dc powered and self‐resetting. Its pulses are measured to be 26 ps in duration at a simulated maximum frequency of 2.5 GHz. The sampling technique is useful for measuring general fast waveforms with unprecented sensitivity and resolution extendable to subpicosecond time scale.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
84.30.Sk Pulse and digital circuits
06.60.Jn High-speed techniques (microsecond to femtosecond)
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