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1 Jan 1980

Volume 36, Issue 1, pp. 1-111

Page 1 of 2 Pages Next Page | Jump to Page

A frequency‐locked mode‐locked cw dye laser for high‐resolution spectroscopy in the frequency domain

B. Couillaud, A. Ducasse, L. Sarger, and D. Boscher

Appl. Phys. Lett. 36, 1 (1980); http://dx.doi.org/10.1063/1.91299 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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A synchronously mode‐locked cw dye laser suitable for high‐resolution spectroscopy in the frequency domain is described. The number of oscillating modes has been reduced to restrict the laser bandwidth to the order of the Doppler width of the molecular transitions. By frequency locking one of the oscillating laser modes to a reference cavity, the linewidth of each mode of the frequency comb has been narrowed to less than 500 kHz. The tuning of the central frequency extends from 5650 to 6300 Å in the case of R6G. The mode spectrum of the laser can be continuously translated in frequency over several gigahertz.
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42.55.Mv Dye lasers

High‐power constricted double‐heterojunction AlGaAs diode lasers for optical recording

D. Botez, F. W. Spong, and M. Ettenberg

Appl. Phys. Lett. 36, 4 (1980); http://dx.doi.org/10.1063/1.91312 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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In this letter we describe a new type of constricted double‐heterojunction injection laser especially designed for optical disk recording. The laser is capable of steady operation in a stable fundamental spatial mode at powers of 80 mW/facet at 20% duty cycle (25‐MHz repetition rate, 8‐nsec‐wide pulses) and 50 mW/facet at 50% duty cycle (10‐MHz repetition rate, 50‐nsec‐wide pulses). Such devices have been used in high‐data‐rate optical recording and preliminary results indicate operating life in excess of 103 h at 40 mW/facet and 50% duty cycle. The laser employs a very thin active region (500–800 Å) and a nearly planar structure to provide as large a source size as possible while remaining in fundamental spatial mode operation. Single longitudinal mode cw operationwas recorded up to 21 mW/facet. It is also found that an antireflection coating on the emitting facet not only raises the overall efficiency and facet damage limit, but also can simplify the modal pattern.
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42.55.Px Semiconductor lasers; laser diodes
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Quantitative spectroscopy of micron‐thick liquid films

C. K. N. Patel and A. C. Tam

Appl. Phys. Lett. 36, 7 (1980); http://dx.doi.org/10.1063/1.91282 (3 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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We demonstrate a new sensitive spectroscopic technique for highly transparent micron‐thick liquid films sandwiched between transparent substrates. A pulsed dye laser irradiates the film, producing (via the optoacoustic effect) a transient ultrasonic wave which is launched into the substrate and detected by a piezoelectric transducer bonded to the substrate. This technique is illustrated by measuring the absorption lines of films of aqueous solutions of rare‐earth ion, and absorptions ∼10−5 can be detected presently. This technique should open up new opportunities to study the spectra of chemi‐ or physi‐adsorbed species on surfaces.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.40.Dw Liquids
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound

A milliwatt‐level cw laser source at 224 nm

Kanti Jain

Appl. Phys. Lett. 36, 10 (1980); http://dx.doi.org/10.1063/1.91296 (2 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Several new results are reported in singly ionized, hollow‐cathode silver, copper, and gold vapor lasers. For the first time, a milliwatt‐level cw laser source is demonstrated at 224 nm, with a threshold as low as 2 A. We have also extracted several hundred milliwatts of peak pulse power output at a number of wavelengths below 300 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.70.+e Charge transfer

Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger

Appl. Phys. Lett. 36, 11 (1980); http://dx.doi.org/10.1063/1.91297 (4 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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GaAs‐AlxGa1−xAs (x=0.3) double‐heterostructure (DH) lasers having very low current threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers having Al‐mole‐fraction differences between the active layers and AlxGa1−xAs confinement layers Δx∼0.3, the best of the MBE‐grown DH laser wafers have averaged current threshold densities similar to those obtained from the best of similar‐geometry DH lasers prepared by liquid‐phase epitaxy (LPE) and by metalorganic chemical vapor deposition (MO‐CVD). With Δx=0.3, the lowest averaged current threshold density achieved is 800 A/cm2 (without reflective coating) for a wafer with an active layer thickness of 0.15 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Thermal and impulse coupling to an aluminum surface by a pulsed KrF laser

J. A. Woodroffe, J. Hsia, and A. Ballantyne

Appl. Phys. Lett. 36, 14 (1980); http://dx.doi.org/10.1063/1.91298 (2 pages) | Cited 16 times

Online Publication Date: 23 July 2008

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The amount of heat deposited on an aluminum target after irradiation in air by a KrF laser at 249 nm has been measured to be ∼40% of the incident pulse energy for long pulses (0.5 μsec), moderate flux levels (106–108 W/cm2), and spot diameter ⩾0.5 cm. The impulse generated by the laser has also been measured. Significant impulse levels were observed at low incident fluence levels.
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61.80.-x Physical radiation effects, radiation damage

Mode locking of traveling‐wave cw ring dye laser

S. Blit and C.L. Tang

Appl. Phys. Lett. 36, 16 (1980); http://dx.doi.org/10.1063/1.91291 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
A synchronously pumped cavity‐dumped mode‐locked cw dye laser using a ring cavity configuration is reported. High intracavity intensities and reliable mode locking are achieved when the ring laser is operated in a unidirectional traveling‐wave mode using an intracavity Faraday rotator. The experiment points up the importance of increaseing the asymmetry in the gain or loss between the two possible counterpropagating intracavity pulses in achieving good mode locking.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

R. Chin, N. Holonyak, B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus

Appl. Phys. Lett. 36, 19 (1980); http://dx.doi.org/10.1063/1.91290 (3 pages) | Cited 56 times

Online Publication Date: 23 July 2008

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Data are presented showing that the threshold current density Jth(T) of quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes, grown by MO‐CVD, is less temperature dependent than that of conventional DH lasers. T0 in the usual expression Jth∝exp(T/T0) can be high as 437 °C. This behavior is explained in terms of the steplike density of states and the disturbed electron and phonon distribution functions of the quantum‐well active region.
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42.55.Px Semiconductor lasers; laser diodes
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices

Vacuum ultraviolet picosecond pulse generation using cw mode‐locked dye lasers

N. P. Economou, R. R. Freeman, J. P. Heritage, and P. F. Liao

Appl. Phys. Lett. 36, 21 (1980); http://dx.doi.org/10.1063/1.91300 (3 pages)

Online Publication Date: 23 July 2008

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We report the generation of a continuous train of pulses of ∼5‐psec duration with wavelength tunable near 1700 Å using two synchronously mode‐locked cw dye lasers. Two‐photon resonantly enhanced 4‐wave mixing in Sr vapor was employed to obtain approximately 10−10 W average power (∼10−7 W/pulse) for inputs of less than 5 mW. The efficiency of this process was measured and is quantitatively compared to previous vacuum ultraviolet coherent radiation generation schemes in Sr vapor.
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42.65.-k Nonlinear optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
32.80.Zb Autoionization

cw optically resonance‐pumped HF laser

J. H. S. Wang, J. Finzi, P. K. Baily, G. W. Holleman, K. K. Hui, and F. N. Mastrup

Appl. Phys. Lett. 36, 24 (1980); http://dx.doi.org/10.1063/1.91301 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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cw HF laser oscillation has been demonstrated in an HF/He mixture excited by optical resonance pumping with a multiline chemical HF laser. Laser oscillation was observed over a pressure range from 25 to 110 Torr. The maximum outcoupled power was 20.2 W with 5.3% overall efficiency.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Dependence of laser output on initial photoelectron density in TEA CO2 laser

Shunji Suzuki, Yuko Ishibashi, M. Obara, and T. Fujioka

Appl. Phys. Lett. 36, 26 (1980); http://dx.doi.org/10.1063/1.91302 (3 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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The relationship has been experimentally clarified between UV preionization density and CO2 laser energy under conditions where the initial energy in the main discharge capacitor was held constant. Laser energy increased logarithmicaly with increasing initial electron number density. Initial electron number density increased exponentially as input preionization energy increased.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

Frequency modulation and demodulation of a 10.6‐μm CO2 laser

Y. Yasuoka, T. Takahashi, and T. K. Gustafson

Appl. Phys. Lett. 36, 29 (1980); http://dx.doi.org/10.1063/1.91303 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Frequency modulation and demodulation in optical communication is done using the 10.6‐μm CO2 laser beam as a carrier. A GE‐LiNbO3 acousto‐optic device and W‐Ni point‐contact diode are used as a modulator and a detector, respectively. The frequency of the carrier shifts by f0, by driving the modulator with the signal of f0. By using the nonreflected laser beam as a local oscillator, the beat note of f0 is obtained at the receiving station. Present experimental observations have demonstrated this, using the subcarrier of 38 MHz and the signal of 1 MHz as the driving frequencies of the modulator.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Interference enhanced Raman scattering from very thin absorbing films

G. A. N. Connell, R. J. Nemanich, and C. C. Tsai

Appl. Phys. Lett. 36, 31 (1980); http://dx.doi.org/10.1063/1.91304 (3 pages) | Cited 58 times

Online Publication Date: 23 July 2008

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A new method of obtaining Raman spectra from a very thin highly absorbing films (α≳105 cm−1) is described. The technique which is termed interference enhanced Raman scattering (IERS) is shown theoretically to produce a gain in the scattered intensity of 10–103 (depending on the optical constants of the material) over that expected from a thick sample using the conventional Raman backscattering configuration. The potential of the method is demonstrated experimentally using tellurium, and a gain of 20 is obtained.
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78.30.-j Infrared and Raman spectra
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

z‐dependent absorption and stimulated backscatter processes in laser produced plasmas

S. Jackel, H. M. Loebenstein, A. Zigler, H. Zmora, and S. Zweigenbaum

Appl. Phys. Lett. 36, 34 (1980); http://dx.doi.org/10.1063/1.91305 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Low‐ and high‐atomic‐number targets were irradiated at normal and oblique incidences with high focused intensity, 2.5‐nsec duration of 1.06‐μm laser pulses. Calorimetry and spectroscopy of ω and 2ω light reflected back into the focusing lens was performed. Results show a dramatic reduction in the specularly reflected light from high‐atomic‐number targets. Brillouin backscatter was observed throughout the range 1014–1016 W/cm2. 2ω spectra indicated the presence of an electron‐ion decay instability with a threshold at 2×1015 W/cm2.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena
42.60.-v Laser optical systems: design and operation

Role of carrier diffusion in lattice heating during pulsed laser annealing

Ellen J. Yoffa

Appl. Phys. Lett. 36, 37 (1980); http://dx.doi.org/10.1063/1.91306 (2 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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A calculation is presented which demonstrates that diffusion of the hot, dense carriers generated in pulsed laser annealing of Si can substantially reduce the rate at which energy is transferred to the semiconductor lattice near the surface. The extent of the region in which this energy transfer occurs is consequently increased.
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82.20.Rp State to state energy transfer
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)

Mössbauer spectroscopy of polycrystalline steel fibers

D. S. Lashmore, L. J. Swartzendruber, and L. H. Bennett

Appl. Phys. Lett. 36, 39 (1980); http://dx.doi.org/10.1063/1.91307 (2 pages)

Online Publication Date: 23 July 2008

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Polycrystalline steel fibers, commonly known as ’’Schladitz whiskers,’’ produced by thermal decomposition of iron pentacarbonyl in the presence of a magnetic field, have been studied by means of the 57Fe Mössbauer effect. Results show that the fibers are a two‐phase alloy of α‐Fe and Fe3C. Almost all the carbon present in the fibers is tied up as Fe3C. The magnetic polarization (in zero applied field) is random rather than being aligned along the fiber axis.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
76.80.+y Mössbauer effect; other γ-ray spectroscopy
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Very efficient void formation in ion implanted InSb

G. L. Destefanis and J. P. Gailliard

Appl. Phys. Lett. 36, 40 (1980); http://dx.doi.org/10.1063/1.91308 (3 pages) | Cited 32 times

Online Publication Date: 23 July 2008

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Ion implantation in InSb forms a surface layer which looks like a sponge. We show that this structure is related to an elevation of the surface by as much as 2 μm.In this perturbated layer, large voids typically 50 Å in diameter were observed by TEM. We have studied the evolution of this void formation as a function of the mass, the energy, and the dose of ions.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Raman scattering in superlattices: Anisotropy of polar phonons

R. Merlin, C. Colvard, M. V. Klein, H. Morkoc, A. Y. Cho, and A. C. Gossard

Appl. Phys. Lett. 36, 43 (1980); http://dx.doi.org/10.1063/1.91309 (3 pages) | Cited 61 times

Online Publication Date: 23 July 2008

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Raman experiments on polar phonons in GaAs‐Ga1−xAlxAs superlattices are reported. Other data from the literature, and its interpretation in terms of folding of the phonon Brillouin zone and scattering from q≠0 phonons induced by electronic zone folding, are discussed. An alternative explanation is presented based on optical anisotropy induced by layering. Numerical results show good agreement with experiment.
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78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals

Growth of metallic whisker crystals incorporated with field electron emission

F. Okuyama

Appl. Phys. Lett. 36, 46 (1980); http://dx.doi.org/10.1063/1.91310 (2 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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Metallic whisker crystals were found to grow on the electron‐emitting region of a pointed field cathode when it was operated in a vacuum containing metal carbonyl vapors. Metal ions are produced by collisions of carbonyl molecules with field electrons and the rapid growth of the whiskers is controlled by the supply of metal ions to the electron‐emitting area. The crystals are basically monocrystalline, and the evidence obtained indicates that they do not contain an axial screw dislocation emerging at their growing tip.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
79.70.+q Field emission, ionization, evaporation, and desorption

Primary defects in low‐fluence ion‐implanted silicon

K. L. Wang

Appl. Phys. Lett. 36, 48 (1980); http://dx.doi.org/10.1063/1.91311 (3 pages) | Cited 16 times

Online Publication Date: 23 July 2008

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Electrical defect energy levels created by low‐fluence ionic impact were investigated using transient capacitance spectroscopy. The ion species used are 1H+, 2H+2, 4He+, 11B+, and 31P+. The defect levels were identified by comparing these levels with those obtained in electron‐irradiated structures. The defect production yields for various ion species and for different fluences were obtained. Only a small fraction of the carrier removal could be accounted for by the observed DLTS levels.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
68.55.-a Thin film structure and morphology

Subtraction of signal overlaps in Rutherford backscattering spectrometry

Z. L. Liau

Appl. Phys. Lett. 36, 51 (1980); http://dx.doi.org/10.1063/1.91313 (3 pages)

Online Publication Date: 23 July 2008

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A technique has been developed to deduce the individual signals from overlapped ones in Rutherford backscattering spectra. Based on the backscattering kinematics, a coordinate shift and a subtraction are carried out between the backscattering spectra taken at two slightly different incident‐ion energies. The subtraction eliminates one of the overlapping signals and yields the derivative of the other one, from which the two individual signals are reconstructed unoverlapped. Before the subtraction, a small change in energy scale is used to correct the slight change of signal shape due to the variation of incident‐ion energy. This technique has been tested to yield good results in a computer‐simulated backscattering experiment on a thin‐film structure consisting of 5 layers of Au‐Ag alloys.
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82.80.-d Chemical analysis and related physical methods of analysis
34.50.-s Scattering of atoms and molecules
29.40.-n Radiation detectors
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Shallow‐homojunction GaAs cells with high resistance to 1‐MeV electron radiation

John C. C. Fan, Ralph L. Chapman, Carl O. Bozler, and Peter J. Drevinsky

Appl. Phys. Lett. 36, 53 (1980); http://dx.doi.org/10.1063/1.91314 (4 pages)

Online Publication Date: 23 July 2008

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We have recently reported the fabrication of single‐crystal GaAs shallow‐homojunction solar cells that have conversion efficiencies of about 20% at AM1 (17% at AM0). These cells employ an n+/p/p+ structure, prepared by chemical vapor deposition on either GaAs or Ge substrates. We have now demonstrated the superior resistance of such cells to 1‐MeV electron radiation, which produces effects approximating those due to space radiation. The experiments were done on four cells at fluences up to 1016 e/cm2. One of the cells was found to have both higher initial and final maximum power per unit area than any space cells previously reported.
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84.60.Jt Photoelectric conversion
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
78.70.-g Interactions of particles and radiation with matter
84.60.-h Direct energy conversion and storage

Preparation of atomically clean silicon surfaces by pulsed laser irradiation

D. M. Zehner, C. W. White, and G. W. Ownby

Appl. Phys. Lett. 36, 56 (1980); http://dx.doi.org/10.1063/1.91315 (4 pages) | Cited 60 times

Online Publication Date: 23 July 2008

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Irradiation of single‐crystal silicon with pulsed ruby laser radiation is shown to reduce the levels of C and O surface contaminants to within the detection limits of Auger electron spectroscopy. Similar results were observed following irradiation of Ar sputtered surfaces and surfaces with chemisorbed oxygen. These results show that pulsed laser irradiation can be used to prepare atomically clean Si surfaces in remarkably short processing times.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
79.20.Fv Electron impact: Auger emission
61.05.J- Electron diffraction and scattering

Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements

J. C. Bean and J. M. Poate

Appl. Phys. Lett. 36, 59 (1980); http://dx.doi.org/10.1063/1.91316 (3 pages) | Cited 49 times

Online Publication Date: 23 July 2008

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The epitaxial crystallization rate of UHV‐deposited amorphous silicon is shown to be 1–2 orders of magnitude lower than the rate reported for ion implanted amorphous layers. The rate of growth is a function of depth, decreasing towards the layer surface. Crystallization is inhibited in samples exposed to air at room temperature. Results indicate that gases migrate at least 1000 Å into deposited films and thus suggest that voids are interconnected by microscopic pores.
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61.43.Fs Glasses
61.43.-j Disordered solids
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Quantitative determination of hydrogen in silicon‐nitride films using proton‐proton scattering

P. Paduschek and P. Eichinger

Appl. Phys. Lett. 36, 62 (1980); http://dx.doi.org/10.1063/1.91317 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The hydrogen profiles of silicon‐nitride films were measured using the p‐p scattering technique with 1.2‐MeV protons generated by a small accelerator. In plasma‐nitride layers, hydrogen concentrations on the order of 20 at.% were found compared to 7 at.% in low‐pressure CVD layers. The depth resolution was found to be 0.1 μm and a sensitivity limit of 10 ppm is estimated.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
82.80.-d Chemical analysis and related physical methods of analysis
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