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15 May 1980

Volume 36, Issue 10, pp. 787-873

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Dynamics of CO2 laser heating in the processing of silicon

M. R. T. Siregar, W. Lüthy, and K. Affolter

Appl. Phys. Lett. 36, 787 (1980); http://dx.doi.org/10.1063/1.91334 (2 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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The optical transmission of commerical Si wafers was measured at the wavelength of 10.6 μm as a function of temperature in the interval from about 78 to 850 K. We show that the absorptivity of Si increases with the sample temperature. This temperature dependence is explained by free‐carrier absorption. A transmission measurement at 10.6 μm wavelength has been used to monitor the temperature of a Si sample as a function of time during cw laser heating.
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42.62.-b Laser applications
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.-v Laser optical systems: design and operation
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Kinetics of the XeCl (B→X) laser

T. G. Finn, R. S. F. Chang, L. J. Palumbo, and L. F. Champagne

Appl. Phys. Lett. 36, 789 (1980); http://dx.doi.org/10.1063/1.91335 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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Formation and quenching processes of the XeCl (B) state have been investigated. Mixtures of Ne/Xe/HCl have been irradiated by an electron beam of 0.6 μsec duration. The results indicate that the formation efficiency of the XeCl (B) and (C) states are 143%and 31%, respectively. If these states are closely coupled, the ultimate efficiency of the XeCl (B→X) laser is 174%. Two‐body quenching by neon is the major loss process. At a pumping current of 7 A/cm2, electron mixing of the B and C states is negligible; however, electron quenching may be present, and at most a 20% effect.
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33.50.Dq Fluorescence and phosphorescence spectra
31.50.Df Potential energy surfaces for excited electronic states
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Influence of a thin gold surface layer on the electrochromic behavior of WO3 films

A. R. Haranahalli and D. B. Dove

Appl. Phys. Lett. 36, 791 (1980); http://dx.doi.org/10.1063/1.91336 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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A new WO3 electrochromic cell structure is described that gives rise to an enhanced rate of coloration. In the electrochromic cells described, a thin gold film has been deposited upon the WO3 film, enabling potentials to be measured or applied at the WO3‐electrolyte interface. By applying external voltages on the gold film during coloration and bleaching, the response times have been decreased by a factor of 20 to less than 50 ms.
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78.20.Jq Electro-optical effects
82.47.-a Applied electrochemistry

cw carbon monoxide laser with rf excitation in the supersonic flow

W. Schock, W. Schall, H. Hügel, and P. Hoffmann

Appl. Phys. Lett. 36, 793 (1980); http://dx.doi.org/10.1063/1.91337 (2 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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A cw CO laser with rf discharge transverse to the supersonic flow is described. Using segmented electrodes an electric power density of 33 W/cm3 or 0.15 eV/CO molecule is deposited in a homogeneous arc‐free plasma at 7 Torr. At a laser power of 60 W the emission occurs predominantly on the V=5→4 and 4→3 transitions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Hc Glow; corona

A low‐beam‐divergence cw (GaAl)As double‐heterostructure laser grown by low‐pressure metallorganic chemical vapor deposition process

J. P. Hirtz, J. P. Duchemin, P. Hirtz, B. de Cremoux, R. Bisaro, P. Merenda, M. Bonnet, E. Duda, G. Mesquida, and J. C. Carballes

Appl. Phys. Lett. 36, 795 (1980); http://dx.doi.org/10.1063/1.91338 (2 pages)

Online Publication Date: 23 July 2008

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We report the operation of a new stripe geometry (GaAl)As double‐heterostructure laser, grown by low‐pressure metallorganic vapor deposition (MO‐CVD). Several points make this MO‐CVD laser very suitable for optical communication: (i) a very low beam divergence in the direction perpendicular to the junction plane, 26 °; (ii) a low pulsed threshold current, 80 mA (stripe geometry: 5×300 μm); (iii) an emission wavelength of 8300 Å (optimum for optical fiber transmission).
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
42.62.-b Laser applications

Output power fluctuations in a high‐pressure cw CO2 laser

M. Hishii, H. Nagai, A. Nagai, and T. Akiba

Appl. Phys. Lett. 36, 797 (1980); http://dx.doi.org/10.1063/1.91319 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Large fluctuations of output power have been observed above a certain level of the radiation power accumulated inside the laser cavity. These fluctuations can be effectively suppressed by circulating the gas mixture through an unexcited region between the active medium and one of the cavity mirrors, or by removing CO2 molecules from the gas mixture in the unexcited region. Experimental evidence indicates that the fluctuations are due to the absorption of intracavity radiation by the CO2 molecules contained in that region.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.25.Bs Wave propagation, transmission and absorption

Attenuation of a parabolic‐index fiber with periodic bends

J. N. Fields

Appl. Phys. Lett. 36, 799 (1980); http://dx.doi.org/10.1063/1.91320 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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We have measured the excess loss induced by periodic distortions of a multimode optical fiber having parabolic index profile. Agreement with theory is dramatic: the attenuation as a function of distortion wavelength exhibits a well‐defined peak, characteristic of a coherent mode‐coupling process in a system having uniform mode spacings. Results from measurements on step‐index fibers are also presented and are shown to be in qualitative agreement with theory.
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42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers

Semiconductor injection lasers with a circular resonator

Andrew Shuh‐Huei Liao and Shyh Wang

Appl. Phys. Lett. 36, 801 (1980); http://dx.doi.org/10.1063/1.91321 (3 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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Outstanding lasing characteristics of a new GaAs‐(GaAl)As ring laser is reported. The basic structure of the new laser includes a circular resonator and straight output branching waveguide. The possibility to eliminate the need for feedback reflectors should make it attractive for integrated optics applications.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Extension of the operating period of an UV Cu II laser by admixture of argon

B. Auschwitz, H. J. Eichler, and W. Wittwer

Appl. Phys. Lett. 36, 804 (1980); http://dx.doi.org/10.1063/1.91322 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The operating period of an UV Cu II laser (discharge current ≳25 A, duty cycle 6:1) is extended from minutes to over one hour by an admixture of 0.1% argon to the neon pump gas. In addition, a new laser line at 270.1 nm has been observed.
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42.55.-f Lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules

Broadband efficient thin‐film Sezawa wave interdigital transducers

J. E. Bowers, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 36, 806 (1980); http://dx.doi.org/10.1063/1.91323 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The phase velocities and coupling coefficients for Sezawa waves in (001) ZnO on (001) cut, (100) prop. Si and on (111) cut, (112) prop. Si are presented. Experimental results from Sezawa wave delay lines are presented which represent for the first time bandwidths in excess of 30 MHz in a thin‐film monolithic device.
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43.35.Ns Acoustical properties of thin films
77.65.-j Piezoelectricity and electromechanical effects
68.60.-p Physical properties of thin films, nonelectronic
43.20.Bi Mathematical theory of wave propagation

Propagation of light ions in a plasma channel

J. N. Olsen, D. J. Johnson, and R. J. Leeper

Appl. Phys. Lett. 36, 808 (1980); http://dx.doi.org/10.1063/1.91324 (3 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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An intense beam of light ions has been propagated 50 cm in a wire‐initiated plasma channel in a background of 40 Torr of D2 gas. A magnetically insulated ion diode was used on the Hydra accelerator (0.3 TW, 1 MV) to inject the beam into the plasma channel. Propagation efficiencies of 80–90% were inferred from carbon activation measurements.
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52.75.Di Ion and plasma propulsion
52.25.Fi Transport properties
52.40.Mj Particle beam interactions in plasmas

Collective acceleration of metallic ions

Richard J. Adler and John A. Nation

Appl. Phys. Lett. 36, 810 (1980); http://dx.doi.org/10.1063/1.91325 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Preliminary results of collective acceleration of aluminum and iron ions from metal foils are presented. Aluminum ions of up to 15 MeV have been produced from a 0.6‐MeV electron beam. Results also suggest that all particle species accelerated reach the same velocity (∼0.035c), indicating that the acceleration may occur in a moving potential well.
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29.20.-c Accelerators

Filamentation instability of a self‐focused relativistic electron beam

Z. Segalov, Y. Goren, Y. Carmel, S. Eylon, and A. Ginzburg

Appl. Phys. Lett. 36, 812 (1980); http://dx.doi.org/10.1063/1.91326 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Observations of filamentation instabilities in a self‐focusing relativistic electron beam are presented. Such instabilities may enhance asymmetrical pellet heating in electron‐pellet inertial fusion devices.
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41.75.Fr Electron and positron beams
29.27.Eg Beam handling; beam transport

Subsurface imaging with photoacoustics

G. Busse and Allan Rosencwaig

Appl. Phys. Lett. 36, 815 (1980); http://dx.doi.org/10.1063/1.91327 (2 pages) | Cited 63 times

Online Publication Date: 23 July 2008

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We have performed thermal‐wave imaging of subsurface features in a metal using, for the first time, piezoelectric detection. Photoacoustic magnitude and phase images are presented.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Pyroelectric glass‐ceramics

G. J. Gardopee, R. E. Newnham, A. G. Halliyal, and A. S. Bhalla

Appl. Phys. Lett. 36, 817 (1980); http://dx.doi.org/10.1063/1.91328 (2 pages) | Cited 17 times

Online Publication Date: 23 July 2008

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Highly oriented surface layers of lithium disilicate crystals were grown by crystallizing glasses of composition Li2Si2O5 in a temperature gradient. The polar c axes of the crystallites were oriented parallel to the temperature gradient and perpendicular to the sample surface. The pyroelectric response of the glass‐ceramic crystallized in a thermal gradient was approximately four times larger than that of a touramaline crystal of similar dimensions. The time dependence of the pyroelectric signal obeys the thin‐film equivalent circuit model developed by Chynoweth.
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77.70.+a Pyroelectric and electrocaloric effects

An ion beam technique for the measurement of deuterium diffusion coefficients

M. B. Lewis and K. Farrell

Appl. Phys. Lett. 36, 819 (1980); http://dx.doi.org/10.1063/1.91329 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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This letter describes how a combination of the techniques of nuclear microanalysis and cathodic hydrogenation has been used to determine the diffusion coefficient of dueterium in austenitic stainless steel at room temperature. Samples charged in deuterated acid solutions to levels of about 20 at. % deuterium were quickly transferred to a scattering chamber where a depth profile of the near‐surface deuterium was measured. For charging times much longer than the transfer plus anlyzing time, the deuterium profile could be described by an error function at the specimen surface. A diffusion coefficient was determined by a χ‐squared test fitting procedure and shown to be consistent with values reported for other methods measured at higher temperatures.
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66.30.J- Diffusion of impurities

Fatigue‐life improvement by nitrogen‐ion implantation on steel: Dose dependence

S. Lo Russo, P. Mazzoldi, I. Scotoni, C. Tosello, and S. Tosto

Appl. Phys. Lett. 36, 822 (1980); http://dx.doi.org/10.1063/1.91330 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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The effect of 30‐keV nitrogen‐ion implantation on the fatigue lifetime of type 38 NCD4 steel has been investigated. The implants enhance the fatigue lifetime for nitrogen doses between 1017 and 2×1017 ions/cm2. The results suggest that the implantation current density can have an important role, in connection with the thermal diffusion of implanted ions.
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81.40.Pq Friction, lubrication, and wear
81.90.+c Other topics in materials science (restricted to new topics in section 81)
62.20.Qp Friction, tribology, and hardness
46.55.+d Tribology and mechanical contacts

Continuous series of metastable Ag‐Cu solid solutions formed by ion‐beam mixing

B. Y. Tsaur, S. S. Lau, and J. W. Mayer

Appl. Phys. Lett. 36, 823 (1980); http://dx.doi.org/10.1063/1.91331 (4 pages) | Cited 75 times

Online Publication Date: 23 July 2008

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Metastable Ag‐Cu solid solutions have been formed by ion‐beam mixing of thin deposited Ag and Cu layers of various compositions. X‐ray diffraction measurements indicated that the lattice parameters of the ion‐induced Ag‐Cu alloys vary almost linearly with composition, with a slight positive deviation from Vegard’s law for ideal solid solutions. The microstructures of the alloyed layers were studied by transmission electron microscopy and their stability was examined by thermal annealing up to 250 °C. The present results are compared with those obtained previously by rapid quenching techniques.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Depth resolution degradation of sputter‐profiled InP/InxGa1−xAsyP1−y interfaces caused by cone formation

R. S. Williams, R. J. Nelson, and A. R. Schlier

Appl. Phys. Lett. 36, 827 (1980); http://dx.doi.org/10.1063/1.91332 (3 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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Both InP and InxGa1−xAsyP1−y surfaces with trace metal contaminations are unstable with respect to cone formation when sputter etched by Ar+. Such gross surface texture severely degrades the depth resolution of sputter profiling techniques. Cone formation can be prevented by avoiding contamination of the material being profiled with metals sputtered from various surfaces in the analysis system. An uncorrected width of 140 Å was determined using techniques which optimize sputter depth profiling for an In0.74Ga0.26As0.60P0.40‐InP heterojunction grown by liquid phase epitaxy.
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68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
81.10.Fq Growth from melts; zone melting and refining
61.80.Jh Ion radiation effects

A simple technique for determining the stress at the Si/SiO2 interface

Peter G. Borden

Appl. Phys. Lett. 36, 829 (1980); http://dx.doi.org/10.1063/1.91333 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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A simple technique for measuring the stress at the Si/SiO2 interface is described. This involves etching a groove in the silicon, using the SiO2 layer as a mask. The SiO2 overhang, resulting from etch undercutting, is not constrained by the Si/SiO2 bond and assumes a periodic shape. Measurement of the amplitude and period gives the strain required to conform the SiO2 to the silicon. This allows calculation of the interface stress and the strain in the silicon. For 280 nm of SiO2 on (110) Si, the SiO2 strain is 9×10−3, the interface stress is 6×109dyne/cm2, and the silicon strain 3×10−3, in agreement with previously reported values.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
46.35.+z Viscoelasticity, plasticity, viscoplasticity

Improvement of polycrystalline silicon solar cells with grain‐boundary hydrogenation techniques

C. H. Seager, D. S. Ginley, and J. D. Zook

Appl. Phys. Lett. 36, 831 (1980); http://dx.doi.org/10.1063/1.91339 (3 pages) | Cited 40 times

Online Publication Date: 23 July 2008

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Electron‐beam‐induced‐current– and dark‐current–voltage measurements have been made on p/n photovoltaic cells fabricated from polycrystalline silicon. These data have demonstrated that grain‐boundary hydrogenation greatly reduces grain‐boundary minority carrier recombination and improves diode current‐voltage characteristics.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors

Composition control of GaxIn1−xAs films grown by MBE onto InP substrates

M. T. Norris

Appl. Phys. Lett. 36, 833 (1980); http://dx.doi.org/10.1063/1.91340 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The molecular beam epitaxial growth of the ternary alloy GaInAs onto (100) oriented InP substrates has been investigated with it being established that, although epitaxial film growth can be achieved over a wide range of substrate temperatures, high‐quality layers of composition simply related to the incident flux levels can only be grown in the narrow range Ts=400–430 °C. Film growth below Ts=400 °C was found to result in degradation of electrical properties, while deposition above Ts=430 °C resulted in compositional inhomogeneity.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Observation of amorphous silicon regions in silicon‐rich silicon dioxide films

A. Hartstein, J. C. Tsang, D. J. DiMaria, and D. W. Dong

Appl. Phys. Lett. 36, 836 (1980); http://dx.doi.org/10.1063/1.91341 (2 pages) | Cited 35 times

Online Publication Date: 23 July 2008

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Raman scattering and optical transmission measurements have been made on chemically vapor‐deposited Si‐rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as‐deposited films. Annealing the films at 1150 °C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
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81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Chromium redistribution during thermal annealing of semi‐insulating GaAs as a function of encapsulant and implant fluence

P. K. Vasudev, R. G. Wilson, and C. A. Evans

Appl. Phys. Lett. 36, 837 (1980); http://dx.doi.org/10.1063/1.91342 (4 pages) | Cited 28 times

Online Publication Date: 23 July 2008

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Chromium depth distributions have been measured in semi‐insulating GaAs substrates that were thermally annealed (840 °C, 20 min) under both capless and SiO2‐encapsulated conditions, with and without the presence of sulfur implants of several fluences. It is clearly shown that the chromium redistribution is not strongly influenced by the encapsulant but depends on the background chromium level and the implantation‐induced damage. For sulfur implant fluences below ∼1013 cm−2, the chromium redistribution is similar to that in an annealed, unimplanted substrate.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.U- Doping and impurity implantation

Effect of structure and impurities on the epitaxial regrowth of amorphous silicon

G. Foti, J. C. Bean, J. M. Poate, and C. W. Magee

Appl. Phys. Lett. 36, 840 (1980); http://dx.doi.org/10.1063/1.91356 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

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The regrowth of ultrahigh‐vacuum‐deposited amorphous silicon occurs along a planar interface which moves outward from the crystalline substrate at a nonlinear rate. Secondary ion mass spectroscopy indicates that atmospheric gases percolate into the films upon exposure to air. Of the entrapped gases, the oxygen content at a given depth correlates particularly well with the regrowth rate at that point. Extrapolation to zero oxygen content shows that deposited and implanted amorphous silicon have significantly different intrinsic regrowth rates. This difference suggests that these materials have a fundamentally different structure.
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61.43.Fs Glasses
61.43.-j Disordered solids
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
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