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1 Jun 1980

Volume 36, Issue 11, pp. 879-938


Transient absorption in electron‐beam‐excited rare gases at XeF laser wavelengths

R. S. F. Chang and L. F. Champagne

Appl. Phys. Lett. 36, 879 (1980); http://dx.doi.org/10.1063/1.91368 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Transient absorption experiments in pure and mixed rare gases were performed at the XeF laser wavelength using a broadband probe technique. The major absorbing species in this region are identified. There is a strong broadband absorption in electron‐beam‐excited argon which is due to Ar+2. In neon plasmas the broadband absorption is much weaker. However, there are a number of strong line absorptions due to Ne(3s‐4p) transitions, one of which coincides with the 351‐nm emission band of the XeF laser. Addition of xenon reduces Ne∗ absorption. The amount of xenon used is limited by the formation of Xe+2, which is also a strong absorber in the 350‐nm region.
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42.25.Bs Wave propagation, transmission and absorption
42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Measurement of high pressure induced in water by a CO2 laser pulse

P. Giovanneschi, D. Dufresne, J. P. Caressa, and Ph. Bournot

Appl. Phys. Lett. 36, 882 (1980); http://dx.doi.org/10.1063/1.91369 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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The vaporization and thermoelastic pressures induced in water by a high‐energy CO2 laser pulse are measured as a function of the laser intensity. Below the air/water interface breakdown threshold, the vaporization peak pressure increases as the (6)/(5) power of the laser intensity and as the (2)/(3) power of the laser intensity above the breakdown threshold. The thermoelastic peak pressure is proportional to the laser power.
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65.40.De Thermal expansion; thermomechanical effects
43.30.Yj Transducers and transducer arrays for underwater sound; transducer calibration

Ablative optical recording using organic dye‐in‐polymer films

K. Y. Law, P. S. Vincett, R. O. Loutfy, L. Alexandru, M. A. Hopper, J. H. Sharp, and G. E. Johnson

Appl. Phys. Lett. 36, 884 (1980); http://dx.doi.org/10.1063/1.91370 (2 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Ablative optical recording using dissolved dyes in polymer films has been investigated. Polyester yellow dissolved in poly(vinyl acetate) was used as a model to study the potential for high‐sensitivity, high‐density optical storage applications. With 20% dye loading, a 59‐nm film was more sensitive at 457 nm than a 15‐nm Te monolayer, and marks down to 0.5 μm were recorded. The signal contrast (Rf−Ri)/(Rf+Ri) was approximately 0.68 for marks ablated with high‐energy laser pulses. The morphology of the marks shows a clean removal of recording material. Suitable polymeric overcoatings, used to simulate second‐surface recording situations, had little effect on the results.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.62.-b Laser applications
42.70.Gi Light-sensitive materials

Pulse‐width stabilization of a synchronously pumped mode‐locked dye laser

S. R. Rotman, C. B. Roxlo, D. Bebelaar, and M. M. Salour

Appl. Phys. Lett. 36, 886 (1980); http://dx.doi.org/10.1063/1.91371 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Using an analog feedback loop acting on the mode‐locker frequency of a synchronously pumped mode‐locked dye laser, we have observed a substantial decrease of pulse‐width variations at frequencies up to 10 kHz at the cost of an increase in higher‐frequency noise. A digital loop acting on the cavity length decreased noise at low frequencies. Using these methods, we have generated reproducible and stabilized frequency‐tunable subpicosecond pulses, and have determined the effects of noise in the mode‐locking frequency of the pumping Ar+ laser and drift in the cavity length of the dye laser.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
43.50.Yw Instrumentation and techniques for noise measurement and analysis

Efficient sequence‐frequency generation in a parametric fiber‐optic oscillator

K. O. Hill, B. S. Kawasaki, Y. Fujii, and D. C. Johnson

Appl. Phys. Lett. 36, 888 (1980); http://dx.doi.org/10.1063/1.91372 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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An optical fiber parametric oscillator pumped by 1.06‐μm radiation and emitting light in a sequence of five wavelengths is reported. The oscillation wavelengths are approximately equispaced in energy and span the interval from 0.52 to 1.63 μm. A conversion efficiency of 25% for the pump frequency into the other frequencies is obtained. Other sequences with up to nine upconverted wavelengths in the same interval have also been observed.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.-i Fiber optics

Graded‐index antireflection surfaces for high‐power laser applications

W. H. Lowdermilk and D. Milam

Appl. Phys. Lett. 36, 891 (1980); http://dx.doi.org/10.1063/1.91373 (3 pages) | Cited 33 times

Online Publication Date: 23 July 2008

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Graded‐index antireflection (AR) surfaces can be developed on phase‐separated optical‐quality glass. These surfaces have a median damage threshold of 12 J/cm2 for 1‐ns, 1.06‐μm laser pulses which is 2.5 times higher than the threshold of thin‐film AR coatings, and reflectivity ≲0.2%, comparable to thin‐film coatings.
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42.70.Ce Glasses, quartz
42.79.Wc Optical coatings

Surface acoustic wave characteristics of (Ba2−xSrx)TiSi2O8 crystals

Yukio Ito, Kazuyuki Nagatsuma, and Sakichi Ashida

Appl. Phys. Lett. 36, 894 (1980); http://dx.doi.org/10.1063/1.91357 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The surface acoustic wave characteristics of fresnoite (Ba2TiSi2O8) crystals are improved. The temperature coefficients of delay time are greatly lowered, with almost no change in the electromechanical coupling factor, as the result of partial substitution of Sr for Ba, particularly in (Ba2−xSrx)TiSi2O8 crystals. These crystals have temperature coefficients of delay comparable to LiTaO3, while their electromechanical coupling factors are twice as large.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects

Suppression of higher harmonic generations of SAW in LiNbO3

J. Lee, M. P. Singh, and J. Zucker

Appl. Phys. Lett. 36, 896 (1980); http://dx.doi.org/10.1063/1.91358 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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ZnO thin‐film loading of YZ‐LiNbO3 is used to suppress all the harmonic generations of surface acoustic waves (SAW’s) in the substrate. An optical probing technique is used to measure the intensity variations of the harmonics as a function of acoustic power. Only the first‐order diffracted light intensity is observed owing to the suppression of higher harmonic generations of SAW’s. This linearization of the first‐order diffracted light intensity versus acoustic power is found to be independent of the interaction length (up to 5 mm) and the acoustic power (up to 4.3 W). The attenuation of SAW’s on YZ‐LiNbO3 with a 2‐μm ZnO layer was measured to be about 5 dB/cm at 325 MHz.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Submicrosecond bistable electro‐optic switching in liquid crystals

Noel A. Clark and Sven T. Lagerwall

Appl. Phys. Lett. 36, 899 (1980); http://dx.doi.org/10.1063/1.91359 (3 pages) | Cited 1151 times

Online Publication Date: 23 July 2008

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Ferroelectric smectic C (FSC) liquid crystals are used in a simple new geometry that allows the spontaneous formation of either of two surface‐stabilized smectic C monodomains of opposite ferroelectric polarization. These domains are separated by well‐defined walls which may be manipulated with an applied electric field. The resulting electro‐optic effects exhibit a unique combination of properties: microsecond dynamics, threshold behavior, symmetric bistability, and a large electro‐optic response.
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61.30.-v Liquid crystals
78.20.Jq Electro-optical effects

Atom probe analysis of segregation in Fe–0.15 wt. % Ti

H. W. Pickering, Y. Kuk, and T. Sakurai

Appl. Phys. Lett. 36, 902 (1980); http://dx.doi.org/10.1063/1.91360 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A compositional analysis of a Fe‐Ti alloy was carried out using a time‐of‐flight atom probe. It was found that titanium atoms are segregated to the surface and grain boundaries after heating to 1073 or 1273 K at 10−6 Pa (10−8 Torr). A decreasing titanium concentration profile extends over several atomic distances and even at 20 atomic distances from the surface the Ti concentration is above the nominal bulk value. In the outermost surface layers and in the grain boundaries titanium is present in the form of oxide, mainly TiO and TiO2, whereas in the subsurface atom‐layer region it is present as randomly distributed titanium atoms and to a lesser degree as clusters of Ti around impurities, such as C, N, and O.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.-y Defects and impurities in crystals; microstructure
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.70.+q Field emission, ionization, evaporation, and desorption

Effects of a finite melt on the thickness and composition of liquid phase epitaxial InGaAsP and InGaAs layers grown by the diffusion‐limited step‐cooling technique

L. W. Cook, M. M. Tashima, and G. E. Stillman

Appl. Phys. Lett. 36, 904 (1980); http://dx.doi.org/10.1063/1.91361 (4 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The thickness of InGaAsP (λg=1.15 μm) and InGaAs (λg=1.68 μm) liquid phase epitaxial layers grown on (100) InP substrates by the step‐cooling technique has been measured as a function of growth time. (λg is defined as the wavelength corresponding to the energy gap of the epitaxial layer.) For growth times much less than the shortest diffusion time τi=l2/Di of the melt constituents, where l is the melt height and Di is the diffusivity of each component in the melt, the thickness is consistent with diffusion‐limited theory, and the composition is constant. The time at which the growth rate deviates sharply from diffusion‐limited theory and beyond which constant composition growth can no longer be maintained has been determined for the melt size used in our experiments and can be estimated for any melt size.
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81.10.Fq Growth from melts; zone melting and refining

Direct optical visibility of ferroelectric domains of dicalcium strontium propionate, Ca2Sr(C2H5CO2)6

T. Hosokawa, J. Kobayashi, and Y. Uesu

Appl. Phys. Lett. 36, 907 (1980); http://dx.doi.org/10.1063/1.91362 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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It has been found that antiparallel domains in a ferroelectric phase of Ca2Sr(C2H5CO2)6 are visible in polarized light traveling along the unique optic axis, although the phase is optically uniaxial. The domains with opposite polarity are discerned as pseudo‐octagonal islands with dark and bright contrast. As the most probable origin of the visibility the induced dissymmetry due to growth pyramids is proposed.
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77.80.Dj Domain structure; hysteresis
78.20.Fm Birefringence
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
77.80.B- Phase transitions and Curie point

Hydrogenated amorphous‐silicon thin films produced by ion plating

Franklin H. Cocks, Alan J. Scharman, Phillip L. Jones, and Stuart F. Cogan

Appl. Phys. Lett. 36, 909 (1980); http://dx.doi.org/10.1063/1.91363 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Ion plating techniques have been used to produce amorphous‐silicon thin films which contain up to 25 atomic percent hydrogen. The Si–H bond stretching mode observed for hydrogenated amorphous‐silicon thin films produced by glow‐discharge decomposition methods is also observed for these ion‐plated films. Optical absorptivity measurements for ion‐plated films give band‐gap values between 1.58 and 1.90 eV.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
75.20.Ck Nonmetals
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
78.30.Hv Other nonmetallic inorganics

Forward‐ and reverse‐bias tunneling effects in N+P silicon solar cells

G. F. J. Garlick and A. H. Kachare

Appl. Phys. Lett. 36, 911 (1980); http://dx.doi.org/10.1063/1.91364 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Excess currents due to field‐assisted tunneling in both forward and reverse bias directions have been observed in n+‐p silicon solar cells. These currents arise from the effect of conducting paths produced in the depletion layer by n+ diffusion and cell processing. Forward‐bias data indicate a small potential barrier with height ∼0.04 eV at the n+ end of conducting paths. Under reverse bias, excess tunneling currents involve a potential barrier at the p end of the conducting paths, the longer paths being associated with smaller barrier heights and dominating at the lower temperatures. Low‐reverse‐bias data give energy levels of ∼0.11 eV for lower temperatures (253–293 K) and ∼0.35 eV for higher temperatures (293–380 K). A model is suggested to explain the results.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.-i Conductivity phenomena in semiconductors and insulators
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Selective laser annealing

Alan B. Fowler and R.T. Hodgson

Appl. Phys. Lett. 36, 914 (1980); http://dx.doi.org/10.1063/1.91365 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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We have demonstrated that amorphous silicon films can be laser recrystallized selectively over diffused heavily doped lines in silicon substrates. The laser wavelength (1.06 μm) is chosen so that much more energy is absorbed in the heavily doped regions of the crystal than in the neighboring lightly doped regions. In this way, lines narrower than the 2.5‐μm diffused width have been recrystallized with the recrystallized regions registered on the diffusions with no masking and with no alignment.
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79.20.Ds Laser-beam impact phenomena
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Direct writing of regions of high doping on semiconductors by UV‐laser photodeposition

D. J. Ehrlich, R. M. Osgood, and T. F. Deutsch

Appl. Phys. Lett. 36, 916 (1980); http://dx.doi.org/10.1063/1.91366 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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The direct doping of InP with variable Cd concentrations has been demonstrated in a maskless process with micrometer‐scale spatial control. The process makes use of cw UV‐laser photodeposition of the dopant on a laser‐heated surface.
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79.20.Ds Laser-beam impact phenomena
61.80.-x Physical radiation effects, radiation damage

An amorphous SiHx‐ferroelectric image scanner

R. A. Lemons

Appl. Phys. Lett. 36, 919 (1980); http://dx.doi.org/10.1063/1.91367 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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By sputtering an amorphous SiHx photoconductor onto a gadolinium molybdate crystal, the voltage required to move a ferroelectric domain wall can be modulated with a light pattern. This allows the light pattern to be converted to a voltage waveform. Since the domain wall is less than 100 nm wide, a high‐resolution image line scan is produced without fabricating a fine pattern in the device surface. Using a constant current source to drive the domain wall, the fabricated devices resolve up to 400 lines/mm. This limitation is due to the device capacitance rather than domain‐wall width or current spreading in the photoconductor.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.60.-q Optoelectronic devices
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

InP surface conducting films from electron‐pulse annealing

D. Eirug Davies, E. F. Kennedy, J. J. Comer, and J. P. Lorenzo

Appl. Phys. Lett. 36, 922 (1980); http://dx.doi.org/10.1063/1.91374 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Heavily conducting layers have been observed in InP subjected to pulse electron beam annealing. No implantation is involved and sheet resistivities of ∼10 Ω/☒ are typically obtained. The conduction is confined to within ∼500 Å of the surface and is annealable thermally ∼400 °C. Indicated concentrations are ≳1021 cm−3. Both electron microscopy and Rutherford backscattering show that electron beam annealing leads to a phosphorus loss at the surface. It is presumed that the observed conduction can be attributed to some defect associated with phosphorus loss.
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68.55.-a Thin film structure and morphology
79.20.Kz Other electron-impact emission phenomena
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Formation of p+‐p−‐n− junctions in InP by Cd diffusion

A. K. Chin, B. V. Dutt, H. Temkin, W. A. Bonner, and D. D. Roccasecca

Appl. Phys. Lett. 36, 924 (1980); http://dx.doi.org/10.1063/1.91375 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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A study was made of the diffusion of Cd into nominally undoped (4×1016 cm−3) n‐type InP using elemental sources consisting of (Cd and In) or (Cd and P). Two diffusion fronts whose depths are controlled by the amount of P or In in the diffusion source were delineated by etching. Electron beam induced current profiles and photoluminescence measurements revealed the formation of a  p+‐ p−‐ n− junction, with the  p− region bounded by the two diffusion fronts. Mesa p+‐ p−‐ n− diodes, 150 μm in diameter, fabricated from a wafer with the p+‐ p− and p−‐ n− junctions at 3.1 and 20.0 μm, respectively, have reverse breakdown voltages between 90 and 220 V and reverse leakage currents from 5 to 10 pA at half breakdown. The I‐V characteristics of these p+‐p−‐n− diodes exceed those of state of the art, abrupt p+‐n− InP avalanche photodiodes because of the formation of the p− region.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.-h Diffusion in solids

Close‐contact annealing of ion‐implanted GaAs and InP

B. Molnar

Appl. Phys. Lett. 36, 927 (1980); http://dx.doi.org/10.1063/1.91376 (3 pages) | Cited 43 times

Online Publication Date: 23 July 2008

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Both n‐ and p‐type ion‐implanted GaAs and InP have been annealed at temperatures up to 880 and 760 °C, respectively, using a ’’close‐contact’’ capless annealing technique. In this annealing process the flat, implanted surface of the semiconductor is placed in close contact with another flat surface, usually a Si3N4 encapsulated identical semiconductor. Samples annealed in such a proximity manner show no detectable sign of decomposition and exhibit state of the art electrical performance. This is the first report of successful capless annealing of InP.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
06.60.Ei Sample preparation (including design of sample holders)
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors

Laser‐induced chemical vapor deposition of polycrystalline Si from SiCl4

V. Baranauskas, C. I. Z. Mammana, R. E. Klinger, and J. E. Greene

Appl. Phys. Lett. 36, 930 (1980); http://dx.doi.org/10.1063/1.91377 (3 pages) | Cited 30 times

Online Publication Date: 23 July 2008

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Polycrystalline Si films with average grain sizes of ∼8 μm have been grown by laser‐induced chemical vapor deposition from SiCl4. A cw CO2 laser operated at 10.6 μm was used to provide local heating of quartz substrates in an otherwise cool reactor to initiate the endothermic decomposition reaction. Deposition rates of 5.1 μm/min were obtained for films grown at an incident laser power of 18.9 W, resulting in sharply defined mesa structures due to the occurrence of the reverse reaction, etching of free Si, at cooler regions of the substrate surface closer to the edge of the 6‐mm irradiated zone. The diameter of the mesas was 1.4 mm with thicknesses up to 26 μm. Three modes of film growth, depending on the incident laser power, were observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.-v Laser optical systems: design and operation
68.55.-a Thin film structure and morphology
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Photoemission measurements of interface barrier energies for tunnel oxides on silicon

P. V. Dressendorfer and R. C. Barker

Appl. Phys. Lett. 36, 933 (1980); http://dx.doi.org/10.1063/1.91378 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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Internal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43–56 Å) are compared with measurements on thick oxides (310 Å and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects
73.40.Gk Tunneling
81.65.-b Surface treatments

Charge collection and spectral response of amorphous‐silicon solar cells

R. O. Bell

Appl. Phys. Lett. 36, 936 (1980); http://dx.doi.org/10.1063/1.91379 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Current generation in hydrogenated amorphous silicon, a‐Si(H), was found to be predominately from the space‐charge region. The mobility‐lifetime (μτ) products were the order of 5×10−10 cm2/V for both holes and electrons. It was necessary to consider trapping and recombination of the optically generated carriers in the space charge region to interpret solar cell and spectral response data.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
84.60.Jt Photoelectric conversion
72.80.Ng Disordered solids
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