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15 Jan 1980

Volume 36, Issue 2, pp. 113-171

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Tunable vacuum ultraviolet laser action by argon excimers

W.‐G. Wrobel, H. Röhr, and K.‐H. Steuer

Appl. Phys. Lett. 36, 113 (1980); http://dx.doi.org/10.1063/1.91398 (3 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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Vacuum ultraviolet lasing was achieved in electron‐beam‐pumped high‐density argon gas (25–65 bars). With a diffraction grating, the argon excimer laser (126 nm) could be tuned between 123.2 and 127.4 nm. The line width of the tuned laser was 0.6 nm and the output power ∼1 kW.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Nuclear‐pumped cw lasing of the 3He‐Ne system

B. D. Carter, M. J. Rowe, and R. T. Schneider

Appl. Phys. Lett. 36, 115 (1980); http://dx.doi.org/10.1063/1.91399 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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The gain for the 6328‐Å laser line for the nuclear excited He‐Ne system has been measured for 300 Torr pressure at thermal neutron flux levels from 2×107 to 1×1014 n/cm2 sec. In order to estimate small:signal gain, the gain was also measured as a function of input intensity. For demonstration of feasibility of cw operation of nuclear pumped lasers, a cavity was operated and lasing was observed. Although the laser output was small, we conclude that lasing in a cw mode has been achieved with He‐Ne using moderate neutron flux levels.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger

Appl. Phys. Lett. 36, 118 (1980); http://dx.doi.org/10.1063/1.91400 (3 pages) | Cited 46 times

Online Publication Date: 23 July 2008

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The current threshold densities (Jth) of broad‐area double‐heterostructure (DH) lasers, the photoluminescence (PL) intensities of the p‐GaAs cap layers, P‐AlxGa1−xAs (x∼0.3) confinement layers, and the GaAs active layers of the DH wafers are investigated as a function of the substrate temperature (450–650 °C) during MBE growth. The PL intensities of the P‐AlxGa1−xAs (x∼0.3) confinement layers and the GaAs active layers increase and the Jth’s of the DH lasers decrease with increasing substrate temperature. The improvement of Jth with increasing substrate temperature is found to be well correlated to the improvement of the optical qualities of the AlxGa1−xAs layers with increasing substrate temperature. However, the PL intensities of the p‐GaAs cap layers are relatively independent of substrate temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Transverse mode stabilized AlGaAs/GaAs plano‐convex waveguide laser made by a single‐step liquid phase epitaxy

Y. Ide, T. Furuse, I. Sakuma, and K. Nishida

Appl. Phys. Lett. 36, 121 (1980); http://dx.doi.org/10.1063/1.91401 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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A new laser structure, the plano‐convex waveguide (PCW) laser is described. A thickness‐varied waveguide layer used for transverse mode stabilization was formed adjacent to the planar active layer. The laser structure was fabricated by a single‐step liquid phase epitaxial growth on a grooved substrate. With pulsed injection, stable fundamental transverse mode operation was observed up to 3.5 times threshold current, where power output was 36 mW/facet. At zero dc bias, single longitudinal mode was attained after 10 ns of the leading edge of the optical pulse. Far‐field beam divergences of about 10° and 50° were obtained in directions parallel and perpendicular to the junction plane, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking

Three‐dimensional heat flow in the photoacoustic effect

F. Alan McDonald

Appl. Phys. Lett. 36, 123 (1980); http://dx.doi.org/10.1063/1.91402 (3 pages) | Cited 37 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
The theory of the photoacoustic effect is generalized to include three‐dimensional heat flow. For typical experimental conditions the predicted photoacoustic signal is precisely the same as that from previous one‐dimensional models, subject only to the restriction that thermal waves transverse to the incident beam do not reach the cell walls. This conclusion applies to both thermally thick and thermally thin sample or gas.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Pulsed CO2 laser interaction with a metal surface at oblique incidence

J. A. McKay, J. T. Schriempf, T. L. Cronburg, J. E. Eninger, and J. A. Woodroffe

Appl. Phys. Lett. 36, 125 (1980); http://dx.doi.org/10.1063/1.91403 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Thermal fluence deposition and surface pressure generation produced by a CO2 laser pulse (λ=10.6 μm, during 10 μs, maximum intensity 3 MW/cm2) have been measured as a function of angle of incidence ϑ on sheet aluminum in air. We find that air plasma ignition depends on the laser beam intensity I0 only, not on the surface‐normal flux I0 cosϑ. Conversely, the fluence deposition and surface pressure depend only on the product I0 cosϑ, and obey the square‐root and two‐thirds‐power dependences observed with simple I0 variation at normal incidence.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena

Electron density measurement by deflection of a far‐infrared beam

H. Keren and J. L. Hirshfield

Appl. Phys. Lett. 36, 128 (1980); http://dx.doi.org/10.1063/1.91404 (3 pages)

Online Publication Date: 23 July 2008

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Electron densities in the range 3×1014<Ne<6×1015 cm−3 have been determined in a laser‐initiated linear discharge using a novel far‐infrared method. The density was determined by measuring deflections of a 119‐ and 171‐μm far‐infrared beam from an optically pumped CH3OH laser. The far‐infrared beam was guided both inside and outside of the plasma chamber using dielectric waveguides. The spatial distribution of electron density for peak discharge currents of 2–4 kA and at distances of 8–25 mm from the laser focus on the target was found to be given by Ne (r,ϑ,I) =3×1014I1.9r−2.4 cosω cm−3, where I is the discharge current in kA, r is the radius from the laser focus on the target in cm, and ϑ is the polar angle from the target axis.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
42.25.Dd Wave propagation in random media
42.62.-b Laser applications

Thermo‐optical spectroscopy: Detection by the ’’mirage effect’’

A. C. Boccara, D. Fournier, and J. Badoz

Appl. Phys. Lett. 36, 130 (1980); http://dx.doi.org/10.1063/1.91395 (3 pages) | Cited 303 times

Online Publication Date: 23 July 2008

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A new thermo‐optical method based on the sensitive detection of thermal gradients adjacent to heated sample surfaces is described. Room‐ and low‐temperature experiments were performed using this technique, and its advantages over different methods are discussed.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
44.30.+v Heat flow in porous media
67.25.dg Transport, hydrodynamics, and superflow
67.25.dt Sound and excitations

Photodissociation of HgCl

P. S. Julienne, D. D. Konowalow, M. Krauss, M. E. Rosenkrantz, and W. J. Stevens

Appl. Phys. Lett. 36, 132 (1980); http://dx.doi.org/10.1063/1.91396 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Transition moments and energies have been calculated for the X‐A, bound to continuum, transition in HgCl. The photodissociation cross section at the peak (∼20 000 cm−1 or 500 nm) is 1.2×10−18 cm2 at 600 K. The laser energy 17 921 cm−1 or 558 nm) for the B‐X transition is close to the peak energy, and a significant absorption will result from a buildup in the concentration of X state HgCl in the course of exciting the laser media. This absorption is suggested as an explanation for the low extraction efficiencies observed for HgCl lasers.
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31.15.A- Ab initio calculations
33.70.Ca Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors
33.80.Gj Diffuse spectra; predissociation, photodissociation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Theoretical study of formation rates of rare‐gas halide trimers

Ven H. Shui and Carolyn Duzy

Appl. Phys. Lett. 36, 135 (1980); http://dx.doi.org/10.1063/1.91397 (2 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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A scarcity of information on the rare‐gas halide trimers makes detailed calculations of their formation rates from the excited rare‐gas halides impossible. However, we have developed an approximate method/model for determining these rate constants. Rate constants for reactions of possible interest for the KrF∗ and XeF∗ laser systems are calculated. These reactions are (1) KrF∗+Rg+Rg′→KrRgF∗+Rg′ and (2) XeF∗+Rg+Rg′→XeRgF∗+Rg′, where Rg, Rg′=Ar, Kr in Eq. (1) and Ne, Ar, Xe in Eq. (2). Results are compared with available experimental data.
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82.20.Wt Computational modeling; simulation

Photoacoustic measurements of ion‐implanted and laser‐annealed GaAs

R. A. McFarlane and L. D. Hess

Appl. Phys. Lett. 36, 137 (1980); http://dx.doi.org/10.1063/1.91405 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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Photoacoustic techniques were developed for use as a rapid and sensitive diagnostic of crystalline disorder produced by ion implantation in gallium arsenide. With a 150‐keV silicon implant, doses as low as 1012 cm−2 were detectable. Recrystallization of ion‐implanted gallium arsenide by laser annealing is readily detected by the photoacoustic method.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
42.60.-v Laser optical systems: design and operation

Surfaces for radiative cooling: Silicon monoxide films on aluminum

C. G. Granqvist and A. Hjortsberg

Appl. Phys. Lett. 36, 139 (1980); http://dx.doi.org/10.1063/1.91406 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Efficient radiative cooling is feasible with surfaces which radiate predominantly in the 8–13‐μm wavelength range, where the atmosphere emittance is low. The desired reflectance profile was approximated with 1.0 μm of SiO evaporated onto Al. It results from strong lattice absorption in SiO in conjunction with destructive interference. Refrigeration to 40 K below the ambient appears to be possible under suitable climatic conditions.
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78.30.Er Solid metals and alloys
78.66.Bz Metals and metallic alloys
89.30.-g Fossil fuels and nuclear power

Self‐aligned thin film structures with 1000 Å resolution

R. E. Howard, E. L. Hu, and L. D. Jackel

Appl. Phys. Lett. 36, 141 (1980); http://dx.doi.org/10.1063/1.91407 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A two‐level e‐beam resist process is described which is capable of producing features under 1000 Å in size. The process is compatible with oblique evaporation technique so that high‐accuracy alignment can be obtained in multiple‐layer device structures. Tunnel junction structures with areas as small as 10−10 cm2 have been fabricated. The estimated capacitance for such junctions is <10−15 F. Such structures have application in low‐capacitance Josephson logic circuits. The process is also applicable to fabrication of submicron MOM diodes and other devices which can be made using a lift‐off technique.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams

Liquid crystal alignment on surfactant treated obliquely evaporated surfaces

W. R. Heffner, D. W. Berreman, M. Sammon, and S. Meiboom

Appl. Phys. Lett. 36, 144 (1980); http://dx.doi.org/10.1063/1.91408 (3 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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We report observations on the alignment of nematic liquid crystals on surfaces of obliquely deposited silicon monoxide, with and without additional treatment with surfactant. The liquid crystals reported on are 4.4‐dihexylazoxybenzene and 4‐heptyl‐4’‐cyanobipheny. The surfactants used are N,N‐dimethyl‐N‐octadecyl‐3‐aminopropyltrimethoxysilyl chloride and plasma polymerized tetrafluoroethylene. While untreated silicon monoxide surfaces produce inclined alignment, with the liquid crystal director oriented in the same quadrant as the direction of deposition, it was found that treatment with surfactant can result in an inclined alignment away from the direction of deposition, with the director now oriented nearly perpendicular to the direction obtained in the absence of surfactant. A simple model to explain these observations is presented.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures

Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laser

A. Ohsawa, K. Honda, S. Ohkawa, and R. Ueda

Appl. Phys. Lett. 36, 147 (1980); http://dx.doi.org/10.1063/1.91409 (2 pages) | Cited 15 times

Online Publication Date: 23 July 2008

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Concentration profiles of interstitial oxygen in silicon crystals were determined by scanning IR absorption using PbTe‐Pb0.82Sn0.18Te semiconductor laser with the wavelength of 9.04±0.02 μm. IR beam was collimated to be 200 μm in diameter. Czochralski‐grown crystals showed a local concentration fluctuation of about 1.8×1017 cm−3 from the average of 1.1×1018 cm−3. This fluctuation corresponds to an oxygen striation in the silicon crystal.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
81.70.-q Methods of materials testing and analysis

An integrated photoconductive detector and waveguide structure

J. C. Gammel and J. M. Ballantyne

Appl. Phys. Lett. 36, 149 (1980); http://dx.doi.org/10.1063/1.91410 (3 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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A new photoconductive detector is described that uses the previously reported optical field effect transistor structure. The detector has good sensitivity (photoconductive gain of ∼5) and high speed (∼150 psec). Light was coupled to this detector via a 7059 glass over SiO2 waveguide. The overall coupling efficiency including losses in endfire coupling was about 40%.
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42.82.-m Integrated optics
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

A 500‐MHz GaAs charge‐coupled device

I. Deyhimy, R. C. Eden, R. J. Anderson, and J. S. Harris

Appl. Phys. Lett. 36, 151 (1980); http://dx.doi.org/10.1063/1.91411 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The higher electron mobility in GaAs relative to silicon makes it possible to design an ultra‐high‐Speed charge‐coupled device. A buried‐channel Schottky barrier gate GaAs charge‐coupled device (CCD) is described which has been operated at up to 500 MHz clock frequency. The transit‐time‐limited upper clock frequency in this device is predicted to exceed 5 GHz.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Measurements of the rectifying barrier heights of various rhodium silicides with n‐silicon

J. de Sousa Pires, F. d’Heurle, H. Norde, S. Petersson, and P. A. Tove

Appl. Phys. Lett. 36, 153 (1980); http://dx.doi.org/10.1063/1.91412 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n‐type silicon substrates and Rh, RhSi, Rh4S5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current‐voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.
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73.40.Ns Metal-nonmetal contacts
73.61.At Metal and metallic alloys
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Formation process of oxide precipitates in Czochralski‐grown silicon crystals

Shoza Shirai

Appl. Phys. Lett. 36, 156 (1980); http://dx.doi.org/10.1063/1.91413 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Swirl‐free silicon crystals were grown, and the relation between growth condition and oxide precipitates (1100 °C) has been studied by the Secco etching technique and x‐ray topography. It was found that precipitates are formed at very high densities in crystals which were grown by introducing temperature fluctuations during the growth. They are located in the seed side of a remelt boundary on which a new growth circle started after each remelting. These results are similar to those for swirl defects in float‐zoned crystals. It is proposed that the precipitates are originated from liquid drops which are formed in interface regions superheated by temperature fluctuations during the growth.
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64.75.-g Phase equilibria
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
64.70.D- Solid-liquid transitions

Solid‐phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica

John C. C. Fan, H. J. Zeiger, Ronald P. Gale, and Ralph L. Chapman

Appl. Phys. Lett. 36, 158 (1980); http://dx.doi.org/10.1063/1.91414 (4 pages) | Cited 47 times

Online Publication Date: 23 July 2008

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Well‐aligned grains of dimensions up to 2–3×100 μm have been obtained by laser crystallization of amorphous Ge films on fused‐silica substrates. A theoretical model has been developed for the dynamics of the crystallization process, a solid‐phase transformation that is greatly accelerated by liberation of the latent heat of transformation, resulting in either periodic or runaway motion of the crystallization front. We believe that scanning of amorphous films with an energy beam of large aspect ratio may be developed into an effective process for preparing large‐grained or even single‐crystal sheets of Ge and other semiconductors, including Si and GaAs.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
68.55.-a Thin film structure and morphology
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
84.60.-h Direct energy conversion and storage

Elastic stiffness and thermal expansion coefficient of BN films

T. F. Retajczyk and A. K. Sinha

Appl. Phys. Lett. 36, 161 (1980); http://dx.doi.org/10.1063/1.91415 (3 pages) | Cited 37 times

Online Publication Date: 23 July 2008

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Room temperature stresses were found to be tensile for chemical vapor deposition films of the composition B2N and compressive for BN, with all films becoming more tensile with heating. Analyses of the stress‐temperature curves of identical films of BN deposited on two different substrate materials yield values of 1.3×1012 dynes/cm2 for the elastic stiffness parameter E/(1−ν) and 1.0 ppm/°C for the thermal expansion coefficient. This technique is of general applicability to thin films and it is believed to be the first practical (nondestructive) means of determining both the elastic stiffness parameter and thermal expansion coefficient of a film.
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68.60.-p Physical properties of thin films, nonelectronic
65.40.De Thermal expansion; thermomechanical effects
62.20.-x Mechanical properties of solids

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C

Z. Iqbal, A. P. Webb, and S. Vepřek

Appl. Phys. Lett. 36, 163 (1980); http://dx.doi.org/10.1063/1.91416 (3 pages) | Cited 44 times

Online Publication Date: 23 July 2008

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Raman scattering, x‐ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low‐pressure hydrogen plasma at a temperature between 230 and 280 °C and a deposition rate of up to ∼0.5 Å sec−1, are polycrystalline. X‐ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.
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68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm

F. Capasso, M. B. Panish, S. Sumski, and P. W. Foy

Appl. Phys. Lett. 36, 165 (1980); http://dx.doi.org/10.1063/1.91417 (3 pages) | Cited 19 times

Online Publication Date: 23 July 2008

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In this letter very high quantum efficiency GaSb mesa photodiodes with AlxGa1−xSb windows are reported for the first time. External quantum efficiencies (ηext) of ≃60% at zero bias and of ≃70% at −1 V near 1.3 μm have been obtained without antireflection coatings. More than 80% of the devices from several wafers exhibited ηext⩾50% at λ≃1.3 μm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Leakage current in InGaAsP avalanche photodiodes

R. Yeats and S. H. Chiao

Appl. Phys. Lett. 36, 167 (1980); http://dx.doi.org/10.1063/1.91418 (4 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The increased leakage current in InGaAsP APD’s near breakdown is found to be a rather uniform bulk property, not associated with conventional microplasmas, dislocations, or surface effects. Surface effects were eliminated by the fabrication of guard ring APD’s, but the increased leakage current persisted. Surface effects were further ruled out by a statistical study of the leakage current in a large sample of APD’s. The study shows conclusively that the leakage current is proportional to diode area, not perimeter.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
FREE

Erratum: Self‐diffusion in intrinsic silicon

Ludomir Kalinowski and Remy Seguin

Appl. Phys. Lett. 36, 171 (1980); http://dx.doi.org/10.1063/1.91668 (1 page) | Cited 13 times

Online Publication Date: 23 July 2008

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Abstract Unavailable
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66.30.H- Self-diffusion and ionic conduction in nonmetals
99.10.Cd Errata
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