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1 Feb 1980

Volume 36, Issue 3, pp. 173-228


Kinetic processes in the electrically excited mercuric‐bromide dissociation laser

William L. Nighan

Appl. Phys. Lett. 36, 173 (1980); http://dx.doi.org/10.1063/1.91435 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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This letter reports the results of an analysis of basic kinetic and plasma processes in fast‐pulse (∼100 nsec) electric discharges containing mixtures of the mercuric‐bromide molecule, HgBr2, and N2 in a Ne background. Formation of the laser molecule HgBr (B2Σ+) is shown to occur as a result of dissociative excitation transfer following quenching of N2 (A3Σ+u ) by HgBr2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions

Oscillator and oscillator‐amplifier experiments with an HgBr2/HgBr dissociation laser

E. J. Schimitschek and J. E. Celto

Appl. Phys. Lett. 36, 176 (1980); http://dx.doi.org/10.1063/1.91436 (3 pages) | Cited 36 times

Online Publication Date: 23 July 2008

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Using steady‐state approximations to describe the performance of an HgBr∗ (B→X), uv‐preionized discharge laser oscillator and amplifier, values are derived for small‐signal gain g0, absorption α0, and saturation flux Isat. The averaged best fit of the experimental data to the theoretical expressions is found for g0=6.6%/cm, α0=0.35%/cm, and Isat =200 kW/cm2 for the case when the buffer gas consists of 900 Torr Ne+100 Torr N2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
34.80.Gs Molecular excitation and ionization

Parametric difference frequency generation in a three‐dimensional LiNbO3 optical waveguide

Naoshi Uesugi

Appl. Phys. Lett. 36, 178 (1980); http://dx.doi.org/10.1063/1.91437 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Difference frequency generation in a three‐dimensional LiNbO3 optical waveguide is experimentally shown using a cw Rhodamine 6G dye laser and a Nd:YAG laser at 1.318 μm. The generated difference frequency wavelength was tuned from 1.035 to 1.19 μm. The output power of the difference frequency wave was 2.4 μW at 1.035 μm, with a pumping dye laser power and an idler Nd:YAG laser power of 70 and 1.7 mW, respectively.
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42.65.-k Nonlinear optics
42.79.Gn Optical waveguides and couplers

Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor

T. Fukuzawa, M. Nakamura, M. Hirao, T. Kuroda, and J. Umeda

Appl. Phys. Lett. 36, 181 (1980); http://dx.doi.org/10.1063/1.91438 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Monolithic integration of a GaAlAs laser with a GaAs Schottky‐gate field effect transistor is demonstrated. A GaAs field effect transistor with a 3‐μm gate length is formed on a double‐heterostructure laser crystal which is protected by a high‐resistivity isolation layer. Laser light intensity is modulated to realize rise and fall times of less than 0.4 ns by modulating the field effect transistor gate voltage.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
85.30.-z Semiconductor devices
42.60.Fc Modulation, tuning, and mode locking

Optical parameters for the MgO:Ni2+ laser system

M. V. Iverson, J. C. Windscheif, and W. A. Sibley

Appl. Phys. Lett. 36, 183 (1980); http://dx.doi.org/10.1063/1.91439 (2 pages) | Cited 32 times

Online Publication Date: 23 July 2008

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The optical properties of the transitions of Ni2+ in MgO have been measured. The temperature dependence of these quantities is important for evaluation of the efficiency of MgO:Ni as a room‐temperature tunable infrared laser. The measurements suggest that MgO:Ni is an excellent candidate for a tunable laser. A comparison of the optical properties with other materials and the use of the Struck and Fonger theory suggest that MgO:Co might also be an acceptable room‐temperature infrared laser with greater tuning range.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission

High specific power long‐pulse supersonic flow XeCl laser at 308 nm

B. Fontaine and B. Forestier

Appl. Phys. Lett. 36, 185 (1980); http://dx.doi.org/10.1063/1.91440 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Quasi cw laser action has been achieved at several wavelengths near 308 nm in an electron‐beam excited supersonic flow at very low temperature and high density. The 0–1, 0–2, and 0–3 XeCl laser emissions have been obtained when Ne/Xe/HCl mixtures aerodynamically cooled to 120 K and at a density up to 1.7 amagat were excited by an electron beam of medium intensity (jeb≃10 A cm−2, 600 ns). Up to 15 mj of laser energy (≃1 J/l) was extracted in 500‐ns pulses from the 16‐cm long and 1‐cm‐diam useful volume of this laser. The highest intrinsic efficiency (laser energy out / e‐beam energy deposited in the active medium) observed was over 2.5%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
47.40.Ki Supersonic and hypersonic flows
33.20.Lg Ultraviolet spectra
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

A master oscillator power amplifier experiment for the determination of the gain coefficient and saturation intensity for an electron‐beam‐excited KrF amplifier

E. L. Patterson, J. K. Rice, and G. C. Tisone

Appl. Phys. Lett. 36, 188 (1980); http://dx.doi.org/10.1063/1.91441 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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A master oscillator power amplifier (MOPA) experiment using an electron‐beam‐excited KrF oscillator and amplifier is described. The amplifier gain as a function of input intensity is determined. A comparison of the measured gain with calculations using a steady‐state analysis yields a determination of the small‐signal gain coefficient and saturation intensity for the amplifier operating with two different gas mixtures. The small‐signal gain is found to be more than an order of magnitude larger than the nonsaturable loss, indicating that efficient energy extraction from the amplifier is possible under the high excitation conditions (1.5–6 MW/cm3) of this study.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

cw high‐power single‐mode operation of constricted double‐heterojunction AlGaAs lasers with a large optical cavity

Dan Botez

Appl. Phys. Lett. 36, 190 (1980); http://dx.doi.org/10.1063/1.91419 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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A new type of constricted double‐heterojunction (CDH) injection laser is presented: a single‐mode laser with a large optical cavity (CDH‐LOC) and leaky lateral waveguide. Single‐mode cw operation (spatially and longitudinally) is achieved in a large lasing spot (1.7×6.5 μm) up to 40 mW output power (one facet) and 2.5 times above threshold. cw thresholds as low as 75 mA and external quantum efficiencies as high as 35% from one facet are obtained for diodes with reflectors on the back facet. The antiguiding nature of these devices is confirmed in the lateral far‐field patterns. As opposed to positive‐index lateral guiding structures, in CDH devices heating can be beneficial for single‐mode selection at high powers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Plasma sheath driven targets

John H. Brownell and Bruce L. Freeman

Appl. Phys. Lett. 36, 193 (1980); http://dx.doi.org/10.1063/1.91420 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Plasma focus driven target implosions are simulated using hydrodynamic‐burn codes. Support is given to the idea that the use of a target in a plasma focus should allow ’’impedance matching’’ between the fuel and gun, permitting larger fusion yields from a focus‐target geometry than the scaling laws for a conventional plasma focus would predict.
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28.52.-s Fusion reactors
52.55.-s Magnetic confinement and equilibrium

Lifetime improvement in Czochralski‐grown silicon wafers by the use of a two‐step annealing

K. Yamamoto, S. Kishino, Y. Matsushita, and T. Iizuka

Appl. Phys. Lett. 36, 195 (1980); http://dx.doi.org/10.1063/1.91421 (3 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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Minority‐carrier lifetime improvement by a two‐step annealing has been demonstrated using MOS capacitors fabricated on Czochralski‐grown (CZ) silicon wafers. It is shown that an intrinsic gettering effect does not always follow a single annealing in an oxygen‐free ambient, even in the wafers containing high oxygen content (∼1018 cm−3). This is probably because nuclei of precipitate‐dislocation complexes (PDC) are two small in size to grow into PDC during a single annealing of recent high‐grade CZ wafers. In the present study, an additional low‐temperature annealing at 800 °C is performed in order to improve the situation. A few critical conditions to the effectiveness of the intrinsic gettering are discussed in connection with the crystalline quality of the wafer.
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66.30.Lw Diffusion of other defects
61.72.-y Defects and impurities in crystals; microstructure
61.72.Nn Stacking faults and other planar or extended defects
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)

Cohesion of solids under laser irradiation

M. Wautelet and L. D. Laude

Appl. Phys. Lett. 36, 197 (1980); http://dx.doi.org/10.1063/1.91422 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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The effects of laser irradiation on the cohesion of diamondlike solids are investigated. It is shown that the melting temperature decreases under laser irradiation, due to the increase of the vibrational energy induced by bond‐charge effects and of the electronic contribution to the total energy of the solid.
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42.60.-v Laser optical systems: design and operation
63.20.K- Phonon interactions
66.30.H- Self-diffusion and ionic conduction in nonmetals
79.20.Ds Laser-beam impact phenomena

Elastic wave scattering at long wavelengths

B. R. Tittmann, W. L. Morris, and J. M. Richardson

Appl. Phys. Lett. 36, 199 (1980); http://dx.doi.org/10.1063/1.91423 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The scattered radiation patterns of spheroidal voids irradiated by longitudinal waves were analyzed in the regime in which the wavelengths are large with respect to the scattering obstacle. The data were acquired using a simple analog device. Agreement between experiment and theory is good, and shows that the shape and size of defects can be estimated using long wavelengths.
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43.20.Fn Scattering of acoustic waves

SiO2 antireflection coating effect on cw laser annealing of ion implanted Si

H. Okabayashi, M. Yoshida, K. Ishida, and T. Yamane

Appl. Phys. Lett. 36, 202 (1980); http://dx.doi.org/10.1063/1.91424 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Annealed strip width, formed by a single line scan of Nd : YAG laser beam on SiO2/As‐implanted Si structure, was found to vary with SiO2 thickness. Observed SiO2 thickness dependence of the annealed strip was in good agreement with calculation made on the basis of the SiO2 antireflection coating effect.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Zn diffusion into GaAs by a two‐temperature method

Osamu Hasegawa and Ryosuke Namazu

Appl. Phys. Lett. 36, 203 (1980); http://dx.doi.org/10.1063/1.91425 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Low‐concentration diffusion of Zn into GaAs has been performed using a closed‐tube two‐temperature method whereby the ZnAs2 diffusion source and the GaAs wafer are placed in the low and the high temperature zones, respectively. Surface hole concentration decreases as the wafer temperature rises, mostly due to the temperature dependence on the equilibrium constant for the reaction which Zn incorporates into the Ga site. The junction depth is heavily dependent on the source temperature. Highly efficient LED is obtained by a two‐temperature diffusion method.
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66.30.J- Diffusion of impurities
85.60.Jb Light-emitting devices

Phase transformations in laser‐irradiated Au‐Si thin films

M. von Allmen, S. S. Lau, M. Mäenpää, and B. Y. Tsaur

Appl. Phys. Lett. 36, 205 (1980); http://dx.doi.org/10.1063/1.91426 (3 pages) | Cited 40 times

Online Publication Date: 23 July 2008

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Laser‐pulse‐induced melting, interdiffusion, and rapid resolidification are applied to deposited Au‐Si thin films of various compositions. It is found that, if 30‐ns pulses are used, amorphous Au‐Si films can be produced over a compositional range 9–91 at.% Au. The stability of the amorphous phases varies with their composition. Thermal decomposition involves the formation of a single‐metastable silicide with a hexagonal structrue. Application of 300‐μs laser pulses directly leads to formation of the same compound.
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64.60.My Metastable phases
82.53.-k Femtochemistry
64.70.K- Solid-solid transitions
61.66.Dk Alloys

Surface hardness and abrasive wear resistance of nitrogen‐implanted steels

R. N. Bolster and I. L. Singer

Appl. Phys. Lett. 36, 208 (1980); http://dx.doi.org/10.1063/1.91427 (2 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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The hardness of nitrogen‐implanted steel surfaces has been determined indirectly by a surface‐sensitive abrasive wear technique using micrometer‐size diamond particles. Wear rates were measured, as a function of depth, for implanted and unimplanted steel discs, and surface hardness was obtained from a verified relationship between wear rate and hardness. Tempered carbon steel implanted with nitrogen ions was significantly hardened to a depth commensurate with the implantation depth. Nitrogen‐implanted 304 steel surfaces were softer than unimplanted ones, possibly due to interference with the work hardening which normally occurs during wearing. This softening effect persisted to depths several times the depth of implantaton. Composition‐vs‐depth profiles of implanted 304 steel obtained with Auger electron spectroscopy, indicated nitrogen migrated inward during wear.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)

Steve Wright and Herbert Kroemer

Appl. Phys. Lett. 36, 210 (1980); http://dx.doi.org/10.1063/1.91428 (2 pages) | Cited 61 times

Online Publication Date: 23 July 2008

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Nonvolatile SiO2 on Si is reduced to elemental Si and to volatile SiO, by exposing the oxidized Si to an atomic Ga beam in vacuum, at a temperature as low as 800 °C. The SiO and the Ga2O form in the process, and the excess Ga evaporates at this temperature, leaving behind a clean and damage‐free surface.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Gh Other heat and thermomechanical treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Characterization of surface oxides by Raman spectroscopy

R. L. Farrow, P. L. Mattern, and A. S. Nagelberg

Appl. Phys. Lett. 36, 212 (1980); http://dx.doi.org/10.1063/1.91429 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Raman spectroscopy is shown to provide direct information on the composition and structure of surface oxides formed on alloys. Previously, identification of specific compounds present in these oxides only could be inferred from conventional surface analysis methods. In our studies, backscattering spectra were obtained from thick oxide films (⪞10 μm) present on high purity and commercial stainless steels after exposure to air and coal gasifier environments at 980 °C. With as‐grown oxides, data were obtained from the outer oxide regions. Spectra from inner regions also were measured using grazing‐angle sectioning techniques. The presence of impurities and minor alloying constituents in the substrates are shown to have profound effect on results; for example, the addition of a few percent of titanium and manganese resulted in the formation of a duplex scale with a thin, complex, outer layer and a relatively thick α–Cr2O3 inner scale.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si

R. G. Wilson, P. K. Vasudev, D. M. Jamba, C. A. Evans, and V. R. Deline

Appl. Phys. Lett. 36, 215 (1980); http://dx.doi.org/10.1063/1.91430 (3 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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Implantation of 200‐keV chromium fluences from 4.5×1012 to 1.0×1015 cm−2 and SIMS profiling were used to measure the atom densities and depth distribution of Cr in bulk GaAs (Cr), in undoped liquid‐phase epitaxial GaAs grown on a GaAs(Cr) substrate, and in Si. The Cr atom density in both GaAs(Cr) substrates was ∼1.6×1017 cm−3. The background‐limited detection sensitivity of SIMS for Cr in GaAs was ⩽3×1015 cm−3. Chromium outdiffused into the epitaxial layer during growth at 800 °C. The diffusion coefficient for CR at 800 °C in GaAs was determined to be 6.7×10−12 cm2/sec. Channeling tails were observed for the Cr implanted in Si and in the undoped epitaxial GaAs, but not in the bulk GaAs(Cr). Ranges, range straggles, and other Pearson IV moments for the implanted Cr distributions are given.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
07.75.+h Mass spectrometers
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Impact ionization rates for electrons and holes in Ga0.47In0.53As

T. P. Pearsall

Appl. Phys. Lett. 36, 218 (1980); http://dx.doi.org/10.1063/1.91431 (3 pages) | Cited 39 times

Online Publication Date: 23 July 2008

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We report the determination of the impact ionization rates for holes and electrons in Ga0.47In0.53As with the electric field oriented in the 〈100〉 direction. Our measurements show that the ionization rate for electrons α is greater than that for holes (β) by about a factor of 2 over electric fields ranging from 2.0×105 to 2.5×105 V cm−1 at 295 K.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects

Application of laser annealing techniques to increase channel mobility in silicon on sapphire transistors

Giora Yaron and LaVerne D. Hess

Appl. Phys. Lett. 36, 220 (1980); http://dx.doi.org/10.1063/1.91432 (3 pages)

Online Publication Date: 23 July 2008

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Laser annealing techniques were successfully incorporated into standard metal‐oxide‐semiconductor silicon‐on‐sapphrie (MOS/SOS) processing to increase transistor channel mobility. Silicon islands were photolithographically defined and chemically etched (by KOH) on standard SOS wafers. The islands were exposed to radiation from an excimer laser (λ=2490 Å) having a pulse duration of 25 nsec, a beam size in the range 0.1–0.2 cm2, and an energy density in the range 0.5–1.0 J/cm2. Using standard processing techniques, MOS transistors were fabricated and characterized. It was found that MOS transistors fabricated over islands exposed to a beam having an energy density of 0.8 J/cm2 exhibit a 30% increase in channel mobility.
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73.25.+i Surface conductivity and carrier phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Effects of bending on the superconducting critical current density of monofilamentary Nb3Sn wires

K. Kaiho, T. S. Luhman, M. Suenaga, and W. B. Sampson

Appl. Phys. Lett. 36, 223 (1980); http://dx.doi.org/10.1063/1.91433 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Variations in the superconducting current density Jc of the Nb3Sn wires upon bending were measured for a series of monofilamentary wires in which the ratio Rv of the matrix (Cu+Sn) to the core (Nb3Sn,Nb) was changed from 0 to 58. In most cases Jc was found to increase slightly until the bending strain exceeded a value of ϵirrB , beyond which it severely and irreversibly degraded. For wires with intermediate values of Rv (∼2 to 10), ϵirrB , calculated by geometrical considerations, was substantially lower than the measured value of the tensile strain ϵirrT which was required to irreversibly degrade the critical current. The influence of bending strains on Jc can qualitatively be described by considering residual prestrains in the matrix and the core.
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74.40.-n Fluctuation phenomena

Step‐edge fabrication of ultrasmall Josephson microbridges

M. D. Feuer and D. E. Prober

Appl. Phys. Lett. 36, 226 (1980); http://dx.doi.org/10.1063/1.91434 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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A technique for producing ultrasmall variable‐thickness Josephson microbridges for high‐frequency applications is described. A two‐dimensional shadowing technique is employed with self‐aligning photolithographic and reactive‐ion milling processes to pattern the substrate with high‐resolution steps. Step heights normal to the substrate are used to determine microbridge dimensions. Lead‐alloy microbridges with resistances ≈10 Ω and dimensions of 50 nm have been produced, and their electrical properties studied. The limits on device size are in the range 10–20 nm. Heated‐substrate deposition of high‐Tc superconductors is compatible with this technique.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
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