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15 Feb 1980

Volume 36, Issue 4, pp. 233-343

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Be‐implanted (GaAl)As stripe geometry lasers

N. Bar‐Chaim, M. Lanir, S. Margalit, I. Ury, D. Wilt, M. Yust, and A. Yariv

Appl. Phys. Lett. 36, 233 (1980); http://dx.doi.org/10.1063/1.91457 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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(GaAl)As double‐heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light‐vs‐current characteristics were kink‐free up to 10 mW output power and the measured differential quantum efficiency was 45%.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
61.72.U- Doping and impurity implantation

A cw x‐ray preionizer for high‐repetition‐rate gas lasers

Tsunenori Arai, Minoru Obara, and Tomoo Fujioka

Appl. Phys. Lett. 36, 235 (1980); http://dx.doi.org/10.1063/1.91458 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Continuous‐wave x‐ray exposure was first used as a preionizer on a pulsed‐discharge HF laser. We investigated experimentally the preionization effect of this cw x‐ray preionizer on a pulsed HF laser. Although the cw x‐ray preionizer resulted in a characteristic performance similar to that of the flash x‐ray preionizer, the cw x‐ray generator has a much larger dose than a flash x‐ray generator. Applicability of a cw x‐ray preionizer to a high‐repetition‐rate pulsed laser was discussed.
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42.60.By Design of specific laser systems
52.80.Pi High-frequency and RF discharges
42.55.Ks Chemical lasers

MOS rib waveguide polarizers

F. K. Reinhart, J. C. Shelton, R. A. Logan, and B. W. Lee

Appl. Phys. Lett. 36, 237 (1980); http://dx.doi.org/10.1063/1.91459 (4 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The transmission properties of single‐heterostructure GaAs‐AlxGa1−xAs rib waveguides (RWG) clad with thin anodized oxides (0–200 Å) covered by gold (MOS structures) are investigated both theoretically and experimentally. Efficient polarizers having extinction ratios of 35 dB and insertion losses <1 dB can be achieved with short (250 μm) polarizing sections. Details of attenuation characteristics depend on the dielectric constants and can be used to investigate the dielectric interface properties of MOS structure.
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42.79.Gn Optical waveguides and couplers
42.25.Ja Polarization

Self‐sustained pulsations in GaInAsP diode lasers

J. N. Walpole, T. A. Lind, J. J. Hsieh, and A. G. Foyt

Appl. Phys. Lett. 36, 240 (1980); http://dx.doi.org/10.1063/1.91460 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Self‐sustained pulsations in light output have been observed for several GaInAsP double‐heterostructure lasers. Although these pulsations are similar to those occurring in AlGaAs lasers, their rate of incidence is much lower and their occurrence does not appear to be increased by aging, in marked contrast to observations for AlGaAs lasers. Most of the GaInAsP lasers exhibiting pulsations appear to have come from a small region of one wafer, suggesting that the pulsations are related to defects originating in the growth process or subsequent fabrication procedures.
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42.55.Px Semiconductor lasers; laser diodes

The effect of ground state population on the XeF laser performance

M. Rokni, J. H. Jacob, J. C. Hsia, and D. W. Trainor

Appl. Phys. Lett. 36, 243 (1980); http://dx.doi.org/10.1063/1.91461 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v″=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500 °K. As a result of the faster dissociation rate at 500 °K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500 °K.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Frequency‐modulated shot noise limited stimulated Raman gain spectroscopy

B. F. Levine and C. G. Bethea

Appl. Phys. Lett. 36, 245 (1980); http://dx.doi.org/10.1063/1.91462 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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We demonstrate for the first time an electro‐optic frequency‐modulated stimulated Raman gain laser system which achieves shot noise limited detection. The frequency modulation technique reduces the otherwise large thermal background produced by absorbing substrates by a factor of 104–105, thereby permitting the full use of the ultrahigh sensitivity which is sufficeint to observe the vibrational spectroscopy of monolayers.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.-v Laser optical systems: design and operation

Intensity self‐pulsations in (GaAl)As injection lasers operating in an external cavity

Luis Figueroa, Kam Lau, and Amnon Yariv

Appl. Phys. Lett. 36, 248 (1980); http://dx.doi.org/10.1063/1.91463 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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We present an experimental and theoretical study of a self‐pulsing (GaAl)As injection laser operating in an external cavity. We have observed suppression of the self‐pulsations when the external cavity is in the range 6<L<10 cm. Suppression of self‐pulsations can also be obtained by using a multimode graded index optical fiber as the external resonator. These results can be explained by a model which includes the effects of an external cavity and electron trapping. For long cavity lengths, the self‐pulsation frequency locks to an external cavity harmonic with no significant quenching, as observed in some earlier experiments.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Implementation of a novel procedure to optimize electron optical systems through the use of orthogonal functions

J. P. van der Merwe

Appl. Phys. Lett. 36, 251 (1980); http://dx.doi.org/10.1063/1.91442 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
It is shown how Fourier‐Bessel series solutions published recently, representing the electric potential in various electrostatic electron optical configurations with rotational symmetry, can be used in a constrained optimization procedure through which local minima of an aberration function A=A (B1, B2, ...) can be found by direct search or by descent methods. The variables Bi are Fourier coefficients. As a simple illustration, a Bessel Box with a coaxial annular aperture is obtained, which produces a tangential ray image of low field curvature and distortion. Optimization with respect to both paraxial and zonal focal properties can be carried out, because the method is not restricted by the use of the paraxial ray equation. The procedure can be applied to one‐foil, and open systems.
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41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
02.60.-x Numerical approximation and analysis
02.70.-c Computational techniques; simulations

Picosecond signal processing with planar, nonlinear integrated optics

R. Normandin and G. I. Stegeman

Appl. Phys. Lett. 36, 253 (1980); http://dx.doi.org/10.1063/1.91443 (3 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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The convolution of picosecond optical signals is demonstrated via the nonlinear mixing of guided waves in a Ti in‐diffused LiNbO3 waveguide. Various applications are discussed.
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42.82.-m Integrated optics
42.65.-k Nonlinear optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

A new surface‐wave acousto‐optic time integrating correlator

N. J. Berg, I. J. Abramovitz, J. N. Lee, and M. W. Casseday

Appl. Phys. Lett. 36, 256 (1980); http://dx.doi.org/10.1063/1.91444 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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A new realization of the acousto‐optic time‐integrating correlator has been constructed. The new device uses a surface‐acoustic‐wave delay line and is configured so that no separate reference beam is required for coherent detection. Instantaneous bandwidths of 30 MHz and integration times of 30 ms have been achieved. Broadband signals, such as pseudonoise biphase modulated waveforms, with signal‐to‐noise ratios of −40 dB have been detected. In addition, center frequency, bandwidth, and relative time‐difference‐of‐arrival of these signals can be determined.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.79.-e Optical elements, devices, and systems

Observation of a second bulk compressional wave in a porous medium at ultrasonic frequencies

Thomas J. Plona

Appl. Phys. Lett. 36, 259 (1980); http://dx.doi.org/10.1063/1.91445 (3 pages) | Cited 187 times

Online Publication Date: 23 July 2008

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A second bulk compressional wave has been observed in a water‐saturated porous solid composed of sintered glass spheres using an ultrasonic mode conversion technique. The speed of this second compressional wave was measured to be 1040 m/sec in a sample with 18.5% porosity. The theory of Biot, which predicts two bulk compressional waves in porous media, provides a qualitative explanation of the observations. To the author’s knowledge, this type of bulk wave has not been observed at ultrasonic frequencies.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.20.Hq Velocity and attenuation of acoustic waves
41.20.Jb Electromagnetic wave propagation; radiowave propagation
91.60.Ba Elasticity, fracture, and flow

Destruction of ground state XeCl molecules by HCl and rare gas collisions

R. W. Waynant and J. G. Eden

Appl. Phys. Lett. 36, 262 (1980); http://dx.doi.org/10.1063/1.91446 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Rate constants for quenching of several XeCl (X) vibrational levels by the rare gases and HCl have been measured. The temporally resolved decay of the population densities of the XeCl (X, v″=0–2) levels was monitored using a frequency‐doubled tunable dye laser. Within experimental error, the measured rate constants did not vary with vibrational number, and the temperature dependence of the rates over the range 300⩽T⩽375 °K was found to be consistent with the previously measured XeCl (X) dissociation energy (∼250 cm−1). The rate constants for the destruction of XeCl (X, v″=0) state molecules by HCl, Xe, Ar and Ne at 300 °K were determined to be (2.20.5) ×10−11, (5.60.8) ×10−12, (0.60.06) ×10−13, and (1.00.15) ×10−13 cm3 sec−1, respectively.
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82.20.Pm Rate constants, reaction cross sections, and activation energies
42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Injection and containment of an unneutralized electron cloud in a bumpy toroidal magnetic field

A. Fisher, P. Gilad, F. Goldin, and N. Rostoker

Appl. Phys. Lett. 36, 264 (1980); http://dx.doi.org/10.1063/1.91447 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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We report on the successful injection, compression, and confinement of an unneutralized electron cloud in a multiple‐mirrored toroidal magnetic field geometry. About 2×1012 electrons were compressed to maximum energy of 500 keV. The lifetime of the cloud was limited by the decaying magnetic field. During its lifetime, the cloud was found to perform m=1 diocotron oscillations. Two injectors were operated in two separate mirror cells, and their mutual interaction was studied.
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52.55.-s Magnetic confinement and equilibrium
52.75.Di Ion and plasma propulsion
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams

Carbon segregation and arc damage of tungsten electrodes

F. W. Ostermayer and F. B. Koch

Appl. Phys. Lett. 36, 266 (1980); http://dx.doi.org/10.1063/1.91448 (3 pages)

Online Publication Date: 23 July 2008

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Eruptions that occur on tungsten electrodes after repeated 35‐A arcs of 1.44‐msec duration have been studied with a scanning Auger microprobe and found to contain high concentrations (20–30 at.%) of carbon. This is much greater than the average carbon concentration in the tungsten and is in the vicinity of the W‐W2C eutectic at 25 at.%. Further evidence that the eruptions are rich in W2C comes from their solubility in hot HNO3. Therefore it appears that carbon progressively segregates in the arc spots due to its low solid solubility in tungsten and the resultant lowering of the melting point is responsible for the eruptions.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Experimental evidence of hydrodynamic instabilities in laser driven implosions

M. H. Key, J. G. Lunney, J. D. Kilkenny, and R. W. Lee

Appl. Phys. Lett. 36, 269 (1980); http://dx.doi.org/10.1063/1.91449 (2 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Aluminium coated microballoons have been imploded by a two‐beam short‐pulse Nd laser. The plasma has been examined by space‐resolved x‐ray spectroscopy which shows that x‐ray lines from the aluminium appear in emission from the implosion core. This suggests that the targets are hydrodynamically unstable, which is contrary to expectation for this exploding pusher mode. Possible experimental errors are eliminated.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Kn Thermodynamics of plasmas
52.70.-m Plasma diagnostic techniques and instrumentation
47.20.-k Flow instabilities

Experimental temperature and time dependence of implantations: Al in Zn

J. Keinonen and A. Anttila

Appl. Phys. Lett. 36, 271 (1980); http://dx.doi.org/10.1063/1.91487 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The range profiles of 60‐keV Al→Zn implantations at 25 and −196 °C were measured as a function of time with the intention to test the time and temperature dependence of the implantation. The probing was carried out using the ( p,γ) resonance broadening method. The 25 °C profile was observed to have an increasing surface peaking as a function of time, while by decreasing the target temperature during the implantation to −196 °C, the peaking was avoided.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects

Stability study of laser irradiation of silicon diffused with arsenic

Wei‐Kan Chu

Appl. Phys. Lett. 36, 273 (1980); http://dx.doi.org/10.1063/1.91450 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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The stability of a metastable state produced by laser irradiation on arsenic‐diffused Si is studied by measurement of the sheet resistance as a function of postlaser heat treatment between 300 and 900 °C. The good conductivity produced by laser irradiation decays at as low as 400 °C within 1 h. This preempts the advantage of good conductivity produced by transient annealing and sets a severe restriction on the application of transient processing.
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61.80.-x Physical radiation effects, radiation damage
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.J- Point defects and defect clusters

Heavy‐doping effects and impurity segregation during high‐pressure oxidation of silicon

Dennis Fuoss and James A. Topich

Appl. Phys. Lett. 36, 275 (1980); http://dx.doi.org/10.1063/1.91451 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Silicon samples which were ion‐ implanted with boron or arsenic were oxidized in high‐pressure (10 atm) pyrogenic steam to determine the effects of heavy doping on the oxide growth rate. Heavy n‐type doping (arsenic) was found to enhance the silicon oxidation rate, but the enhancement was not as great as for oxidation at atmospheric pressure. For p‐type (boron) doping there was only slight enhancement for both high‐pressure and 1‐atm oxidations. Samples were then depth profiled using secondary‐ion mass spectroscopy (SIMS) to observe the segregation of boron and arsenic at the Si:SiO2 interface. The effective coefficients of the impurities for high‐pressure oxidation were found to deviate significantly from those for atmospheric pressure oxidation.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
77.55.-g Dielectric thin films

Scintillation study of ZnWO4 single crystals

Tetsu Oi, Kazumasa Takagi, and Tokuumi Fukazawa

Appl. Phys. Lett. 36, 278 (1980); http://dx.doi.org/10.1063/1.91452 (2 pages) | Cited 63 times

Online Publication Date: 23 July 2008

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Scintillation characteristics of the Czochralski‐grown ZnWO4 single crystal were studied. This crystal, with light red‐brown color, exhibits a maximum luminescence wavelength of 480 nm under excitation at 254 nm. The total luminescence output under x‐ray excitation at 254 nm. The total luminescence output under x‐ray excitation was found to be 2.3 times larger than that of the best Bi4Ge3O12 at room temperature with small afterglow.
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78.70.-g Interactions of particles and radiation with matter
78.45.+h Stimulated emission
87.85.-d Biomedical engineering
81.10.Fq Growth from melts; zone melting and refining

Laser irradiation of furnace preannealed (111) ion implanted silicon

S. U. Campisano, G. Foti, and M. Servidori

Appl. Phys. Lett. 36, 279 (1980); http://dx.doi.org/10.1063/1.91453 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The regrowth of self‐ion implanted amorphous layer on (111) silicon substrate induced by laser pulse is shown to require less energy density in furnace preannealed sample. After 450 °C 30‐min thermal treatment, the energy threshold is reduced about 30%. The extended defects near the threshold exhibit different geometrical arrangement.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Substrate temperature related degradation mechanisms in molecular beam epitaxial InP

M. T. Norris

Appl. Phys. Lett. 36, 282 (1980); http://dx.doi.org/10.1063/1.91454 (2 pages)

Online Publication Date: 23 July 2008

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The deleterious effects of structural changes on the quality of (001) oriented InP grown by MBE at low substrate temperatures has been investigated. For deposition below Ts=300 °C, concomitant with the loss of reconstruction in the reflection high energy electron diffraction (RHEED) pattern, the electrical properties of the epilayers begin to degrade, culminating in their total collapse at Ts =145 °C, associated with the onset of twinned growth.
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61.72.-y Defects and impurities in crystals; microstructure
81.10.Fq Growth from melts; zone melting and refining

Improved stacked‐structure oxide by laser annealing

Giora Yaron and LaVerne D. Hess

Appl. Phys. Lett. 36, 284 (1980); http://dx.doi.org/10.1063/1.91455 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Laser annealing techniques were successfully incorporated into standard MOS processing to improve the quality of oxides grown over polycrystalline silicon (polysilicon). Polysilicon films (5000 Å thick) deposited over 1000 Å SiO2, grown over (100) bulk Si were exposed to a short pulse (20 nsec) of ruby laser radiation at an energy density of 1 J/cm2 and subsequently oxidized at 925 °C. The resulting oxides over the polysilicon were found to have leakage currents which are lower by over three orders of magnitude than oxides grown over polysilicon films which were not laser annealed. C‐V measurements taken on the underlying polysilicon‐SiO2‐Si structure indicate that no deleterious effects were produced in the underlying structure by the laser radiation.
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68.55.-a Thin film structure and morphology

Crystalline phase transition in the copolymer of vinylidenefluoride and trifluoroethylene

Y. Tajitsu, A. Chiba, T. Furukawa, M. Date, and E. Fukada

Appl. Phys. Lett. 36, 286 (1980); http://dx.doi.org/10.1063/1.91456 (3 pages) | Cited 63 times

Online Publication Date: 23 July 2008

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The measurement of the temperature dependence of elastic, dielectric, and piezoelectric constants for the film of 55/45% VDF‐TrFE copolymer suggests that the Curie temperature exists at about 70 °C. The lattice spacing sharply changes at a temperature range from 55 to 75 °C. The remanent polarization is also determined from the D versus E hysteresis loop below 75 °C. It is found that the spontaneous strain in crystal lattice is linearly related to the square of remanent polarization. The transition is ascribed to electrostriction due to dipolar orientation.
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77.80.B- Phase transitions and Curie point
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions
81.40.Rs Electrical and magnetic properties related to treatment conditions

Homogeneous nucleation of oxide precipitates in Czochralski‐grown silicon

Jiro Ōsaka, Naohisa Inoue, and Kazumi Wada

Appl. Phys. Lett. 36, 288 (1980); http://dx.doi.org/10.1063/1.91464 (3 pages) | Cited 36 times

Online Publication Date: 23 July 2008

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The nucleation rate of oxide precipitates in silicon at 750 °C was determined by two‐step annealing and through transmission electron microscopy. The density of oxide precipitates was found to increase by annealing in proportion to annealing time. The precipitates were of two kinds: (a) grown from microprecipitates which existed in as‐grown crystals, and (b) grown nuclei which nucleated during the annealing. The nucleation rate was obtained by discriminating (b) from (a) to be about 107 cm−3 sec−1 for an oxygen content of 11×1017 atoms cm−3. Using this result and classical nucleation theory, homogeneous nucleation mechanism of oxygen precipitation is discussed.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
61.72.S- Impurities in crystals
82.60.Nh Thermodynamics of nucleation
64.75.-g Phase equilibria

Frictional properties of diamondlike carbon layers

K. Enke, H. Dimigen, and H. Hübsch

Appl. Phys. Lett. 36, 291 (1980); http://dx.doi.org/10.1063/1.91465 (2 pages) | Cited 125 times

Online Publication Date: 23 July 2008

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Hard diamondlike carbon layers have been deposited on silicon by rf plasma deposition using acetylene as working gas. For the first time the dependence of the sliding friction coefficient μ on the water vapor content of a nitrogen atmosphere was measured. An increase of μ with increasing humidity has been found, with μ ranging from 0.01 to 0.19. A steel ball was employed as the friction partner. The wear of the layers has been assessed by measuring their durability during friction experiments. It has been shown, contrary to other publications, that the durability has a maximum in the range 0.5–5.0% of relative humidity.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
46.40.-f Vibrations and mechanical waves
83.50.-v Deformation and flow
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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