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1 Mar 1980

Volume 36, Issue 5, pp. 347-388


Gain measurements on the triatomic excimer Xe2Cl

K. Y. Tang, D. C. Lorents, and D. L. Huestis

Appl. Phys. Lett. 36, 347 (1980); http://dx.doi.org/10.1063/1.91498 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Transient gain on the Xe2Cl∗ blue‐green emission continuum has been observed at 488.0,. 497.6, and 514.5 nm. A maximum of 6% per pass was obtained using gas mixtures of Ar/Xe/CCl4 pumped by short, intense electron beam pulses. The stimulated emission cross section, ∼8×10−18 cm2, as derived from the fluorescence spectrum, is consistent with the observed gain. The gain characteristics of Xe2Cl∗ are similar to those observed in the XeF (C→A) system.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

External cavity operated angled‐stripe geometry DH lasers

M. B. Holbrook, D. J. Bradley, and P. A. Kirkby

Appl. Phys. Lett. 36, 349 (1980); http://dx.doi.org/10.1063/1.91499 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Complete elimination of feedback reflections from the cleaved facets of GaAs/GaAlAs double‐heterostructure injection lasers has been achieved. This results in smooth amplified spontaneous emission spectra, from diodes modified by a combination of antireflection coating and angled stripe contacts, at currents greater than 2.5 times the cw threshold for unmodified lasers. The angled‐stripe lasers operate in a two‐mirror cavity producing smooth spectra with 1‐Å (FWHM) bandwidths.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical bistable device as electro‐optical multivibrator

W. Sohler

Appl. Phys. Lett. 36, 351 (1980); http://dx.doi.org/10.1063/1.91500 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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A truly bistable device using an integrated optical cutoff modulator in LiNbO3 is reported. With appropriate optical input power, the device may be used as an electrical Schmitt trigger (electrical bistability). By electrical feedback, electro‐optical multivibrator operation is demonstrated.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Half‐ring (GaAl)As double‐heterojunction injection lasers

Andrew Shuh‐Huei Liao and Shyh Wang

Appl. Phys. Lett. 36, 353 (1980); http://dx.doi.org/10.1063/1.91501 (4 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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We report room temperature operation of injection‐pumped (GaAl)As half‐ring lasers with high mesa stripe geometry. The performance of these lasers is compared with that of the corresponding straight laser. The outstanding features of the half‐ring laser are: (1) Large variation of the far‐field patterns both in shape and in main‐lobe position with the length of the straight section, (2) improved L‐I characteristics, and (3) cleaner longitudinal mode spectra. These observations suggest that the lateral modes in a composite cavity oscillate as a whole to form a hybrid mode. Such hybridization should lead to greater mode stability.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Self‐imaging in a planar x‐ray waveguide

B. Fischer and R. Ulrich

Appl. Phys. Lett. 36, 356 (1980); http://dx.doi.org/10.1063/1.91502 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Single and multiple self‐imaging with soft x rays (λ=4.48 nm) in a waveguide has been achieved for the first time. Images of a 2‐μm‐wide slit were produced by a hollow planar waveguide, consisting of two parallel gold surfaces of W≃10 μm separation and L=90 mm length. These dimensions satisfy the imaging condition Lλ=4W2 for a single ivnerted image in a homogeneous waveguide.
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42.79.Gn Optical waveguides and couplers
07.85.-m X- and γ-ray instruments

High‐output power InGaAsP (λ=1.3 μm) strip‐buried heterostructure lasers

R. J. Nelson, P. D. Wright, P. A. Barnes, R. L. Brown, T. Cella, and R. G. Sobers

Appl. Phys. Lett. 36, 358 (1980); http://dx.doi.org/10.1063/1.91503 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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An InGaAsP (λ=1.3 μm) strip‐buried heterostructure laser with active layer strip widths of 5 μm is described. These devices show stable fundamental‐transverse‐mode operation with linear light‐current characteristics to pulsed output powers over 100 mW. Output powers as high as 500 mW are observed without catastrophic damage, which corresponds to twice the power output at which catastrophic mirror damage occurs for similar GaAlAs SBH lasers. Far‐field beam divergence is approximately 10° and 30° in the directions parallel and perpendicular to the junction, respectively. cw operation with a threshold current of 170 mA has been achieved at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Cg Contact resistance, contact potential

A direct optical measurement of velocity gradients

M. Fermigier, E. Guyon, P. Jenffer, and L. Petit

Appl. Phys. Lett. 36, 361 (1980); http://dx.doi.org/10.1063/1.91504 (2 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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We describe an experiment which allows the measurement of transverse velocity gradients and laminar and turbulent diffusion. A pulsed laser instantaneously ’’writes’’ a phase grating in a flowing liquid, and is subsequently ’’read’’ by forming its diffraction image with a second laser. Results are presented both in the laminar and turbulent regime for a plane Poiseuille flow.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
42.25.Dd Wave propagation in random media
47.27.-i Turbulent flows
47.60.-i Flow phenomena in quasi-one-dimensional systems

Thomson scattering from a tokamak plasma with a repetitively Q‐switched ruby laser

R. Behn, H. Röhr, K.‐H. Steuer, and D. Meisel

Appl. Phys. Lett. 36, 363 (1980); http://dx.doi.org/10.1063/1.91488 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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A ruby laser sytem in periodically Q‐switched operation was used for Thomson scattering from a tokamak plasma. The laser delivers about 25 equidistant pulses of more than 10 MW peak power during the 1‐ms flashlamp discharge. Electron density and temperature of the plasma were recorded as a function of time during the pulse sequence. The repetitively Q‐switched system has been used to measure temperature and density development during a disruptive instability.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
42.60.By Design of specific laser systems
52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices

Electron beam annealing of ion implanted Al

W. R. Wampler, D. M. Follstaedt, and S. T. Picraux

Appl. Phys. Lett. 36, 366 (1980); http://dx.doi.org/10.1063/1.91489 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Pulsed electron beam annealing of Zn‐ and Sb‐implanted Al has been investigated with ion backscattering and transmission electron microscopy. The impurity redistribution produced by 50‐nsec pulses with deposited energies of 1.1 and 1.6 J/cm2 is shown to be due to diffusion in the liquid phase and provides an estimate of the melt time (∼300 nsec for 1.6 J/cm2). Comparison with conventional thermal annealing further supports an interpretation with uniform diffusion in the near‐surface region. In addition, precipitation of AsSb was found to occur within the liquid phase, which is consistent with the Al‐Sb phase diagram.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.30.Mh Solid-phase precipitation

Magnetic field‐induced semimetal‐to‐semiconductor transition in InAs‐GaSb superlattices

N. J. Kawai, L. L. Chang, G. A. Sai‐Halasz, C.‐A. Chang, and L. Esaki

Appl. Phys. Lett. 36, 369 (1980); http://dx.doi.org/10.1063/1.91490 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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With the application of a magnetic field, we have observed a semimetal‐to‐semiconductor transition in InAs‐GaSb superlattices with closely overlapped subbands of electrons and holes. The transition is manifested in a sharp increase in the magnetoresistance in the quantum limit, where the ground Landau levels associated with the subbands are crossed at the Fermi level, resulting in carrier depletion.
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71.30.+h Metal-insulator transitions and other electronic transitions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects

High photocurrent polycrystalline thin‐film CdS/CuInSe2 solar cella

R. A. Mickelsen and Wen S. Chen

Appl. Phys. Lett. 36, 371 (1980); http://dx.doi.org/10.1063/1.91491 (3 pages) | Cited 33 times

Online Publication Date: 23 July 2008

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A polycrystalline thin‐film Cds/CuInSe2 heterojunction solar cell with an efficiency of 5.7% has been prepared using a simultaneous elemental evaporation technique to deposit the CuInSe2 film. The cell–s short(‐circuit current of 31 mA/cm2 under 100 mW/cm2 is the highest ever reported for a 1‐cm2 cell. Heat treatments have been found to improve cell efficiency and to also change the cell I‐V and C‐V characteristics.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

New rectifying semiconductor structure by molecular beam epitaxy

C. L. Allyn, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 36, 373 (1980); http://dx.doi.org/10.1063/1.91492 (4 pages) | Cited 40 times

Online Publication Date: 23 July 2008

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A new unipolar rectifying semiconductor structure is demonstrated. Rectification is produced by an asymmetric potential barrier created by an MBE‐grown sawtooth‐shaped composition wave of AlxGa1−xAs between layers of n‐type GaAs. Single and multiple barriers as well as doped and undoped barriers have been studied and showed rectification. This is the first structure in which rectification has been produced directly by compositional grading.
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81.10.Fq Growth from melts; zone melting and refining
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

I‐V and C‐V characteristics of Cr∥H‐Pc∥ Cr organic sandwich cell

L. C. Isett

Appl. Phys. Lett. 36, 376 (1980); http://dx.doi.org/10.1063/1.91493 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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See Also: Erratum

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The measurement of the capacitance of a thin‐film organic semiconductor sandwich by the capacitor discharge technique and by the quasistatic technique is considered. It is suggested that the apparent voltage dependence of the capacitance is due to charge injection and transport and is not directly related to barrier formation. Data obtained on Cr ∥ phthalocyanine ∥ Cr sandwiches are in good agreement with this model.
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73.40.Sx Metal-semiconductor-metal structures
72.80.Le Polymers; organic compounds (including organic semiconductors)

On the long‐term stability of CdxHg1−xTe at 300 K

W. F. H. Micklethwaite and R. F. Redden

Appl. Phys. Lett. 36, 379 (1980); http://dx.doi.org/10.1063/1.91494 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Recently reported changes in the characteristics of bulk CdxHg1−xTe material stored open for periods of years at 300 K can be explained by the cross diffusion of Hg in the presence of interstitial‐vacancy concentration gradients and/or surface exchange with the ambient. These mechanisms are thought to be inoperative in working photoconductive devices fabricated from such materials.
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66.30.-h Diffusion in solids
72.60.+g Mixed conductivity and conductivity transitions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Hall mobility of polycrystalline silicon

H. Paul Maruska, Amal K. Ghosh, Albert Rose, and Tom Feng

Appl. Phys. Lett. 36, 381 (1980); http://dx.doi.org/10.1063/1.91495 (3 pages) | Cited 39 times

Online Publication Date: 23 July 2008

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Hall mobility of polycrystalline silicon was measured in the dark and under illuminated conditions. Grain boundary potential barriers present in the dark can be eliminated with light. When the barriers are removed, the mobility between 200 and 400 K is found to vary as T−2, which is the dependence observed in single crystals for the same order of magnitude of doping. The free‐carrier concentration of 5×1015 cm−3 was not affected by illumination, and the room temperature mobility in 1‐mm grain size material after barrier elimination with light was 900 cm2/V sec. A phenomological theory of Hall mobility in polycrystallllne silicon which explains these observations is presented.
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72.20.My Galvanomagnetic and other magnetotransport effects
61.72.Mm Grain and twin boundaries
72.40.+w Photoconduction and photovoltaic effects

The capacitance of degenerate‐semiconductor Schottky barriers at low temperatures

Beth Stoeckly

Appl. Phys. Lett. 36, 384 (1980); http://dx.doi.org/10.1063/1.91496 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The low‐temperature capacitance of Schottky barriers formed by degenerate‐semiconductor–metal junctions is of interest in building semiconductor membrane Josephson devices. The capacitance calculated within the depletion approximation is shown to be exact, and the barrier height calculated within the depletion approximation differs from the real barrier height be a small amount which can be calculated if the density of states is known.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Rw Metal-insulator-metal structures

On a proposed Josephson‐effect voltage standard at zero current bias

R. L. Kautz

Appl. Phys. Lett. 36, 386 (1980); http://dx.doi.org/10.1063/1.91497 (3 pages) | Cited 41 times

Online Publication Date: 23 July 2008

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A voltage standard has been proposed which uses a series array of Josephson junctions locked to rf‐induced constant‐voltage steps at zero current bias. The feasibility of this proposal is examined in theory and experiment by determining the conditions under which rf‐induced steps cros the zero current axis and the stability of phase lock under the zero bias condition.
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74.50.+r Tunneling phenomena; Josephson effects
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