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15 Mar 1980

Volume 36, Issue 6, pp. 391-487

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A tunable, ultrahigh spectral brightness KrF∗ excimer laser source

R. T. Hawkins, H. Egger, J. Bokor, and C. K. Rhodes

Appl. Phys. Lett. 36, 391 (1980); http://dx.doi.org/10.1063/1.91528 (2 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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An extremely high spectral brightness KrF∗ (248 nm) excimer source is described. This instrument combines the property of continuous tunability over the full gain profile with the following output pulse characteristics: pulse energy ∼60 mJ, pulse duration ∼10 nsec, spectral width 15030 MHz, absolute frequency control to within 300 MHz, and beam divergence ∼50 μrad. Within the uncertainty of measurement, the spectral width of the output radiation is Fourier transform limited, and the beam divergence corresponds to the diffraction of the radiating aperture.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
07.60.Rd Visible and ultraviolet spectrometers
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

406‐nm laser on the C→B band of N2

J. G. Eden

Appl. Phys. Lett. 36, 393 (1980); http://dx.doi.org/10.1063/1.91529 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Intense visible laser emission on the 0‐3 transition of the N2 (C→B) band at 405.9 nm has been observed by exciting Ar/5–10% N2( pTOTAL ≈2000 Torr) gas mixtures with a long‐pulse (∼0.5 μs) electron beam of cylindrical symmetry. The experimental apparatus consists of a coaxial diode of 50 cm length and 250 cm3 anode volume driven by a low inductance, ∼250‐kV Marx generator. Lasing on the violet line occurs following bottlenecking of the 0‐1 and 0‐2 ultraviolet laser transitions. With ∼0.8% output coupling at 406 nm, a maximum output energy of 2.2 mJ in a 200‐ns FWHM pulse has been obtained in the violet which is comparable to that extracted (for optimum mirror transmission) on the 358‐ and 380‐nm UV laser lines.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Improvement of photoluminescence property of (GaAl)As double‐heterostructure laser wafer with buffer layer

K. Shima, N. Takagi, K. Segi, H. Imai, K. Hori, and M. Takusagawa

Appl. Phys. Lett. 36, 395 (1980); http://dx.doi.org/10.1063/1.91517 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The effect of a buffer layer on a (GaAl)As double‐heterostructure wafer is examined by a photoluminescence (PL) technique. It is found that a buffer layer improves the radiative efficiency and lasing characteristics. There exists a good correlation between the buffer‐layer thickness, and the PL intensity of an active layer and the threshold current density.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Hx Other solid inorganic materials
81.10.Fq Growth from melts; zone melting and refining
61.72.-y Defects and impurities in crystals; microstructure

Dissociative excitation of HgBr2 by rare‐gas metastable atoms and N2(A 3σ+u)

R. S. F. Chang and R. Burnham

Appl. Phys. Lett. 36, 397 (1980); http://dx.doi.org/10.1063/1.91530 (4 pages) | Cited 49 times

Online Publication Date: 23 July 2008

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The dissociative excitation of HgBr2 by rare‐gas metastable atoms and N2(A3J+u) has been studied in a flowing afterglow apparatus. Reaction of HgBr2 with the lighter rare gas (He, Ne, and Ar) metastable atoms gave strong Hg∗ line emissions. Intense HgBr (B2J+→X2J+) emission (300–513 nm) from Xe(3P2) and N2(A) reactions was observed. The rate constants for HgBr∗ (B) formation from HgBr2 excitation by Xe(3P2) and N2(A) were determined as (5.31.5) ×10−10 cm3 sec−1 and ⩽1×10−10 cm3 sec−1 at 350 °K, respectively. Also, the formation rate constant for HgBr∗ (C) from HgBr2+Xe(3P2) was determined to be (1.10.3) ×10−10 cm3 sec−1.
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34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
82.20.Pm Rate constants, reaction cross sections, and activation energies
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Stimulation of far‐infrared emission produced by impact ionization in Ge(Sb)

W. D. Williams and H. Y. Fan

Appl. Phys. Lett. 36, 400 (1980); http://dx.doi.org/10.1063/1.91531 (3 pages)

Online Publication Date: 23 July 2008

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Far‐infrared radiation, in the wavelength range (∼70–170 μm), emitted by Ge(Sb) at LHE temperature was investigated. The recombination radiation was produced by impact ionization due to an applied electric field of the order of 10 V/cm. Measurements were made with the sample open and with the sample in some enclosure. The results show that the increased radiation intensity in the enclosed sample enhanced considerably the significance of induced emission.
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78.20.-e Optical properties of bulk materials and thin films
78.30.-j Infrared and Raman spectra

Remote sensing of CO using frequency‐doubled CO2 laser radiation

D. K. Killinger, N. Menyuk, and W. E. DeFeo

Appl. Phys. Lett. 36, 402 (1980); http://dx.doi.org/10.1063/1.91532 (4 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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Single‐ended remote sensing measurements of the atmospheric concentration of CO using differential absorption of line‐tunable, frequency‐doubled CO2 laser radiation near 4.6 μm are reported. The concentration of CO was deduced from laser backscatter returns from topographic targets at ranges up to 2.5 km with an overall uncertainty of approximately 10 ppb. The use of several targets at different ranges but along the same line of sight permitted pseudo‐range‐resolved measurements and clearly established the strong localization of CO concentration over traffic roadways.
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42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects
92.60.Sz Air quality and air pollution
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

A triatomic Xe2Cl excimer laser in the visible

F. K. Tittel, W. L. Wilson, R. E. Stickel, G. Marowsky, and W. E. Ernst

Appl. Phys. Lett. 36, 405 (1980); http://dx.doi.org/10.1063/1.91533 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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A new triatomic rare‐gas halide laser using the molecular exciplex Xe2Cl is described. Laser emission centered at 518 nm with a special bandwidth of 30 nm and peak power of about 2 kW was obtained from an electron‐beam‐excited high‐density Ar/Xe/CCl4 mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

High‐resolution saturated absorption spectroscopy with coherent trains of short light pulses

B. Couillaud, A. Ducasse, L. Sarger, and D. Boscher

Appl. Phys. Lett. 36, 407 (1980); http://dx.doi.org/10.1063/1.91518 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The feasibility of saturated absorption with two counterpropagating trains of short light pulses from a frequency‐locked, synchronously pumped, mode‐locked, cw dye laser is demonstated. In contrast with the experiments using a single‐frequency laser, several velocity classes contribute to the signal, thus increasing the signal‐to‐noise ratio. In addition, the advantages reported for two‐photon spectroscopy (precise frequency scale, increase of the second harmonic, etc.) are available in this new technique.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
33.20.Kf Visible spectra
33.15.Pw Fine and hyperfine structure

Infrared surface wave interferometry

Z. Schlesinger and A. J. Sievers

Appl. Phys. Lett. 36, 409 (1980); http://dx.doi.org/10.1063/1.91519 (4 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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An interference phenomena is described which involves infrared surface electromagnetic waves on coated metals. The interference is demonstrated with a two‐beam surface wave interferometer of variable path length which utilizes the strong coupling between surface and bulk electromagnetic waves at coating edges.
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42.25.Hz Interference
07.60.Ly Interferometers

Exact cavity equations for lasers with large output coupling

A. E. Siegman

Appl. Phys. Lett. 36, 412 (1980); http://dx.doi.org/10.1063/1.91520 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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The author shows how to write an exact cavity‐mode expansion and obtains formally simple yet exact equations of motion for real laser cavities with large output coupling and/or diffraction losses, using the actual transverse eigenmodes of the cavity as a basis set, and including fast transient variations, externally injected signals, and spontaneous emission noise.
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42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Spectroscopic evidence of multiphoton absorption in nitrogen

G. Baravian, J. Godart, and G. Sultan

Appl. Phys. Lett. 36, 415 (1980); http://dx.doi.org/10.1063/1.91521 (2 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Nitrogen pressure ∼2 Torr provides conditions which allow the spectroscopic study of the multiphoton absorption processes under the action of a neodymium glass laser radiation. From the laser flux dependence of the light intensity emitted by different excited states of nitrogen, we point out various absorption processes leading to the ionization and dissociation of the molecule and to the ionization of the atom.
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33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheres

C. A. Crider and J. M. Poate

Appl. Phys. Lett. 36, 417 (1980); http://dx.doi.org/10.1063/1.91522 (3 pages) | Cited 41 times

Online Publication Date: 23 July 2008

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Platinum silicides have been prepared by depositing Pt thin films under ultrahigh vacuum (UHV) and controlled impurity atmospheres including a range of O2 partial pressures. The substrates and silicide films were analyzed with Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES). Growth of the silicide films was observed under UHV in real time with RBS. Growth rates (i.e. diffusivities) for Pt2Si and PtSi formation were observed to be one to three orders of magnitude higher than previously reported. Increasing partial pressures of O2 during Pt depositions caused the growth rates to decrease by up to a factor of 20 and caused disruption of the normal phase growth sequence; partial pressures of N2 and Ar had no effect.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.40.-g Chemical kinetics and reactions: special regimes and techniques

Stress‐relieved regrowth of silicon on sapphire by laser annealing

G. A. Sai‐Halasz, F. F. Fang, T. O. Sedgwick, and Armin Segmuller

Appl. Phys. Lett. 36, 419 (1980); http://dx.doi.org/10.1063/1.91523 (4 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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We report on an annealing process which controls the stress in SOS. By laser power inputs of various durations, we regrow the Si on a compressed sapphire surface. The room temperature stress in Si correlates with the time scale of the annealing process. The effect can be understood in terms of thermal stress at the sapphire surface.
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61.72.-y Defects and impurities in crystals; microstructure
65.40.De Thermal expansion; thermomechanical effects
46.90.+s Other topics in continuum mechanics of solids (restricted to new topics in section 46)
44.30.+v Heat flow in porous media

Polymer‐modified electrodes: a new class of electrochromic materials

Frank B. Kaufman, Albert H. Schroeder, Edward M. Engler, and Vishnu V. Patel

Appl. Phys. Lett. 36, 422 (1980); http://dx.doi.org/10.1063/1.91524 (4 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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A new class of organic polymeric thin‐film electrochromic materials is described. We show that the new polymer‐modified electrodes change color reversibly in permanent thin‐film form without the electrodeposition characteristics of organic liquid state systems such as the viologens. The polymer films exhibit good switching speeds (τ⩽100 ms), possess intrinsic memory, and show no chemical degradation or adhesion loss in preliminary life tests (104 cycles). It is demonstrated that several important electrochromic parameters can be varied by chemical modification of the polymeric material.
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82.47.-a Applied electrochemistry

Deep levels in scanned electron‐beam annealed silicon

N. M. Johnson, J. L. Regolini, D. J. Bartelink, J. F. Gibbons, and K. N. Ratnakumar

Appl. Phys. Lett. 36, 425 (1980); http://dx.doi.org/10.1063/1.91525 (4 pages) | Cited 19 times

Online Publication Date: 23 July 2008

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Electronic defect levels in scanned electron‐beam annealed (SEBA) silicon have been measured by deep‐level transient spectroscopy. In As+‐implanted p‐n junctions, hole‐trap densities in the 1013‐cm−3 range have been achieved with the dominant levels energetically situated for inefficient charge generation and recombination. In Schottky diodes on unimplanted silicon, SEBA‐induced electron traps have been detected with principal levels at Ec−0.19 eV and Ec−0.44 eV; the defect densities decrease exponentially with distance from the beam‐annealed surface. Both levels are ascribed to vacancy‐impurity complexes (e.g., the 0.44‐eV level identifies the P‐V center), and a simple vacancy‐diffusion model is proposed to explain the defect distributions.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.U- Doping and impurity implantation

Observation of electromigration in heavily doped polycrystalline silicon thin films

J. R. Lloyd, M. R. Polcari, and G. A. MacKenzie

Appl. Phys. Lett. 36, 428 (1980); http://dx.doi.org/10.1063/1.91526 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Heavily doped P‐ and N‐type polycrystalline silicon conductor stripes were subjected to a high direct current density stress of ∼1×106 A/cm2. It was found that all of the N‐type stripes failed near the cathode, whereas all of the P–type stripes failed near the anode, thus pointing out the importance of the sign of the effective mass of the charge carriers in the momentum exchange that leads to electromigration. A model where migration of the dopant is responsible for the observed failures is suggested.
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66.30.J- Diffusion of impurities
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Acoustoelectric measurement of electron mobility and diffusion in ultrathin evaporated gold films

E. Sader, E. Harnik, and S. Kovnovich

Appl. Phys. Lett. 36, 430 (1980); http://dx.doi.org/10.1063/1.91527 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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The electron mobility, diffusion constant, and their dependence on sheet conductivity were derived from simultaneous measurements of acoustoelectric current, attenuation, and phase velocity change induced by the interaction of acoustic surface waves with electrons in thin gold films. The mobility results are consistent with the discontinuous island structure of such films in the interaction region. The effective diffusion constant obtained bears no relation to the corresponding mobility data, and its physical meaning is not clear. It is suggested that the observed ’’diffusion effects’’ are not real, but are simulated by the varying influence of growth characteristics on attenuation and phase velocity in discontinuous metal films.
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73.61.At Metal and metallic alloys
72.50.+b Acoustoelectric effects
43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Optical determination of smectic A layer spacing in freely suspended thin films

Charles Rosenblatt and Nabil M. Amer

Appl. Phys. Lett. 36, 432 (1980); http://dx.doi.org/10.1063/1.91534 (3 pages) | Cited 62 times

Online Publication Date: 23 July 2008

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Optical measurements of smectic A layer spacings in freely suspended thin films of three liquid crystals are reported. Although the measured spacings are close to those reported for the bulk, some anomalous behavior is noted. In addition, we report that the smectic A phase in the film can exist at unusually high temperatures.
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61.30.-v Liquid crystals
68.60.-p Physical properties of thin films, nonelectronic
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Doping effect of annealed GaAs surfaces on vacuum‐epitaxy‐Ge/〈100〉 GaAs

W. F. Tseng, J. E. Davey, A. Christou, and B. R. Wilkins

Appl. Phys. Lett. 36, 435 (1980); http://dx.doi.org/10.1063/1.91535 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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In this letter it is shown that both p‐ and n‐type Ge vacuum‐deposited films can be obtained on the same GaAs substrate during the same pump‐down. p‐type films are generally obtained if films are deposited immediately on the substrate at temperature ⩾300 °C, cooled down from outgas temperature 575 °C. n‐type films are obtained consistently if the same substrate is then held below 300 °C for about 100 min before deposition. The low electron mobility observed for n‐type Ge films leads to the conclusion that the properties of the films are determined by As compensation of p‐type defects inherent in the films.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Determination of recombination lifetime in MOSFET’s

E. Soutschek, W. Müller, and G. Dorda

Appl. Phys. Lett. 36, 437 (1980); http://dx.doi.org/10.1063/1.91536 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A technique is presented for measuring the surface and volume minority‐carrier recombination lifetime in MOSFET’s. The method, based on the charge pumping effect, is particularly useful for measurements on MOS transistors which have passed the whole technological process. Room temperature and nitrogen temperature results are presented. A further advantage of this technique is the simplicity in equipment and analysis of the data.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

A heat‐resisting new amorphous silicon

Hideki Matsumura, Yoshinobu Nakagome, and Seijiro Furukawa

Appl. Phys. Lett. 36, 439 (1980); http://dx.doi.org/10.1063/1.91537 (2 pages) | Cited 31 times

Online Publication Date: 23 July 2008

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By using the sputtering method in a mixture of Ar and SiF4 gases, a purely fluorinated amorphous‐silicon (a‐Si : F) has been deposited, which does not contain hydrogen, and whose dangling bonds are terminated only by fluorine. Fluorine content, infrared absorption, and temperature dependence of conductivity, and also their variation due to the annealing process, are experimentally studied for this a‐Si : F. It is found that all these are kept unchanged even after an annealing process at 600 °C, and that this new a‐Si : F is heat resistant.
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72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Cd Deposition by sputtering

cw multiwavelength transverse‐junction‐stripe lasers grown by molecular beam epitaxy operating predominantly in single‐longitudinal modes

W. T. Tsang

Appl. Phys. Lett. 36, 441 (1980); http://dx.doi.org/10.1063/1.91538 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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A new multiwavelength transverse‐junction‐stripe (MW‐TJS) laser is developed and demonstrated. Such MW‐TJS laser is capable of emitting multiple predominantly single–longitudinal mode emissions having preselected lasing wavelengths. The wavelengths of the lasing lines, their separations, and the number of lasing lines obtainable from a single MW‐TJS laser can be predetermined. In this experiment, the MW‐TJS lasers were grown by molecular beam epitaxy (MBE). As an example, four different lasing lines at 9025, 8793, 8532 and 8276 Å were obtained simultaneously from a single 4‐wavelength TJS laser. The pulsed and cw current thresholds Ith for such 4‐wavelength TJS laser with cavity length of 375 μm and each active layer thickness of 0.5 μm are 245 and 252 mA, respectively. In the case of regular TJS lasers grown by MBE, the pulsed and cw Ith’s are 37–50 and 40–54 mA, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ohmic contacts to p‐type InP using Be‐Au metallization

H. Temkin, R. J. McCoy, V. G. Keramidas, and W. A. Bonner

Appl. Phys. Lett. 36, 444 (1980); http://dx.doi.org/10.1063/1.91539 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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A new contact to p‐InP is reported with beryllium as the acceptor. The contact consists of a thin layer of 3 wt.% Be in Au alloy and a Au overlay sequentially deposited by e‐gun evaporation. Alloying at 420 °C yields Ohmic contacts with low specific contact resistance rc⩽8×10−5 Ω cm2 for InP with NA−ND ≲1×1018 cm−3. To minimize the tendency of InP for thermal dissociation, the alloying temperature can be reduced to 375 °C by adding a thin Pd layer at the semiconductor metallization interface. This is achieved at the expense of a slight increase in resistance.
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73.40.Ns Metal-nonmetal contacts

Observation by Auger electron spectroscopy of the effect of hydrogen at a (111) Si‐SiO2 interface

Steven R. Jost and Walter C. Johnson

Appl. Phys. Lett. 36, 446 (1980); http://dx.doi.org/10.1063/1.91540 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Recent studies have shown that the Si‐SiO2 interface is the source of an Auger peak at approximately 81–83 eV. Here we present the observation that exposure of a thinly (∼10 Å) oxidized silicon surface to approximately 60 langmuirs of H2 caused the interface‐related Auger peak to disappear. This result may be related to the previously demonstrated hydrogen annealing of both interface states and ESR Pb centers at the interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Ds Laser-beam impact phenomena

Channeling of implanted phosphorus through polycrystalline silicon

T. E. Seidel

Appl. Phys. Lett. 36, 447 (1980); http://dx.doi.org/10.1063/1.91541 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Implanted phosphorus was found to penetrate phosphorus‐diffused polycrystalline silicon (polysilicon or poly) gate masks during complimentary metal oxide semiconductor processing. The result is unwanted depletion mode (turned‐on) N‐channel metal oxide semiconductor transistors. The effect is interpreted as channeling of phosphorus through large‐grain polysilicon. The channeling effects were eliminated when (1) the upper polysilicon atomic layers were made amorphous prior to 31P+ implantation, (2) thermal oxides were grown to a thickness which prevents high‐energy 31P+ from entering the grains of the polysilicon, or (3) when the ion‐energy‐to‐poly thickness ratio is reduced below about 200 keV/μm.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation
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