A heterojunction charge‐coupled device (CCD), where the CCD channel is formed in the wider‐band‐gap material confined between the p‐n heterojunction and a Schottky barrier, has been demonstrated in the GaAlAsSb/GaSb system. Charge storage and charge transfer were observed at 77 °K. Analysis of the charge filling time revealed that the dark current was not dominated by thermal generation but possibly by a leakage current between the channel and its guard ring. Nevertheless, a charge filling time as long as 450 sec has been observed. With the heterojunction design, the band gap of the CCD channel can be chosen independently from the band gap of the optical absorber. Therefore the GaAlAsSb heterojunction CCD has potentially better performance in imaging between 1.0 and 1.8 μm than a conventional homojunction CCD.