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1 Apr 1980

Volume 36, Issue 7, pp. 491-608

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LiNbO3 coupled‐waveguided TE/TM mode splitter

Osamu Mikami

Appl. Phys. Lett. 36, 491 (1980); http://dx.doi.org/10.1063/1.91579 (3 pages) | Cited 16 times

Online Publication Date: 23 July 2008

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A novel optical TE/TM mode splitter was fabricated using Ti‐diffused LiNbO3 coupled waveguides. This splitter can spatially separate the TE and TM mode components and is compatible with single‐mode fiber systems. Crosstalk less than −20 dB was realized at 1.15‐μm wavelength. Optical insertion loss was 1.7 dB.
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42.79.Gn Optical waveguides and couplers

XeF(C) state lifetime and quenching by rare gases and fluorine donors

R. W. Waynant

Appl. Phys. Lett. 36, 493 (1980); http://dx.doi.org/10.1063/1.91580 (2 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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The lifetime and quenching rate constants for the XeF(C) state have been measured when that state is produced by flash photolysis of XeF2 in the presence of such quenching gases as He, Ne, N2, Xe, Ar, XeF2, NF3, and F2. The lifetime measured in this manner is 957 ns and the quenching rate constants are 1.2×10−13, 3×10−13, 4×10−13, 1×10−12, 9×10−14, 1.7×10−10, 1.6×10−11, and 8×10−11 cm3 sec−1, respectively.
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82.50.Hp Processes caused by visible and UV light
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
31.50.Df Potential energy surfaces for excited electronic states

cw monoenergetic Cs+ ion source by photoionization

R. W. Dreyfus

Appl. Phys. Lett. 36, 495 (1980); http://dx.doi.org/10.1063/1.91581 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Sequential absorption of two photons converts a Cs atomic beam into an ion beam with minimal change in the original thermal energy of the atoms. The random ion energy is measured to be <0.15 eV; consequently this ion beam is one of the ’’coldest’’ ion sources to date. Currently, the source brightness is 10−4 A/cm2 sr eV and appears extendible to ∼5 A/cm2 sr eV.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
32.80.Fb Photoionization of atoms and ions
42.60.-v Laser optical systems: design and operation
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Efficient XeCl(B) formation in an electron‐beam assisted Xe/HCl laser discharge

William L. Nighan and Robert T. Brown

Appl. Phys. Lett. 36, 498 (1980); http://dx.doi.org/10.1063/1.91582 (3 pages) | Cited 36 times

Online Publication Date: 23 July 2008

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XeCl(B) formation processes are examined for conditions typical of a discharge‐excited laser using HCl as the chlorine donor. It is shown that vibrational excitation of HCl followed by dissociative attachment is a primary step in the reaction sequence resulting in Cl− . XeCl(B) formation is the result of a three‐body Xe+ ‐CL− recombination reaction. Experimental results are presented which demonstrate efficient (∼2%) XeCl laser operation in an e‐beam assisted discharge in which over 75% of the energy was deposited by the discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Power output enhancement of a laser‐produced Cd plasma recombination laser by plasma confinement

W. T. Silfvast, L. H. Szeto, and O. R. Wood

Appl. Phys. Lett. 36, 500 (1980); http://dx.doi.org/10.1063/1.91583 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Enhancements of over a factor of 22 in power output and a factor of 130 in energy output of a laser‐produced Cd plasma recombination laser have been achieved by using guides to confine and elongate the plasma and control its cooling. Such techniques may prove useful in increasing the efficiency of recombination lasers and also in enhancing the prospects of scaling these devices to shorter wavelengths.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
51.70.+f Optical and dielectric properties

Lithium iodate, intracavity upconversion

Y. C. See and Joel Falk

Appl. Phys. Lett. 36, 503 (1980); http://dx.doi.org/10.1063/1.91584 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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We report cw intracavity upconversion using a lithium iodate crystal and an argon laser. A noise equivalent power of 5×10−14 W/Hz1/2 at 3.4 μm is reported. Noise properties of the upconverter were measured and are described herein.
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42.65.-k Nonlinear optics
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Effect of inhomogeneous bonding on output of injection lasers

R. T. Lynch

Appl. Phys. Lett. 36, 505 (1980); http://dx.doi.org/10.1063/1.91585 (2 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Experimental and theoretical evidence is presented which demonstrates the large effect on cw lasing properties of inhomogeneities in the thermal resistance seen by the lasing cavity of semiconductor injection lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

A planar electro‐optic prism array beam splitter

J. Y. Huang and C. L. Lee

Appl. Phys. Lett. 36, 507 (1980); http://dx.doi.org/10.1063/1.91586 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A new type of planar electro‐optic prism array is presented. The array is composed of an individual pair of prisms that gives a sawtooth phase shift to the wave front of the transmitted optical beam; thus the array acts as a triangular phase grating. Theoretical analysis as well as experimental work show that the array behaves as a beam splitter. The splitting of the beam is voltage controllable.
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42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optically pumped superfluorescence S2 molecular laser

J. P. Girardeau‐Montaut and G. Moreau

Appl. Phys. Lett. 36, 509 (1980); http://dx.doi.org/10.1063/1.91587 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Superfluorescent laser emission has been achieved on the B3Σ−u(v′=2) −X3Σ−g(v″=7–18) transitions of the S2 molecule by resonant optical pumping at 337.1 nm with a nitrogen laser. It was observed on a series of ten near‐ultraviolet and visible lines from 370 to 490 nm with a mean induced gas near 0.05 cm−1. Discussion of pulsed laser operation including data on spectroscopic and dynamical processes is reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing

Marshall I. Nathan, R. T. Hodgson, and Ellen J. Yoffa

Appl. Phys. Lett. 36, 512 (1980); http://dx.doi.org/10.1063/1.91588 (2 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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The time dependence of the optical reflectivity of Si during pulsed laser annealing at 530 nm has been measured at probe wavelengths 633 and 488 nm. Within experimental error, no difference between the durations of the reflectivity rise at the two wavelengths is observed. This behavior is inconsistent with the assumption that the rise in reflectivity results from a dense electron‐hole plasma but is consistent with melting of the Si surface.
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81.40.Tv Optical and dielectric properties related to treatment conditions
79.20.Ds Laser-beam impact phenomena
82.20.Rp State to state energy transfer
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Efficient waveguide electro‐optic TE⇄TM mode converter/wavelength filter

R. C. Alferness

Appl. Phys. Lett. 36, 513 (1980); http://dx.doi.org/10.1063/1.91589 (3 pages) | Cited 33 times

Online Publication Date: 23 July 2008

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We report the first demonstration of efficient phase‐matched waveguide electro‐optic polarization conversion. Using a strip Ti‐diffused lithium niobate waveguide and periodic electrodes, we have achieved TE⇄TM conversion efficiency in excess of 99% with an applied voltage of 13 V. The conversion efficiency is strongly wavelength selective; filter bandwidths between 4.5 and 15 Å have been obtained.
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42.82.-m Integrated optics
42.79.Ci Filters, zone plates, and polarizers
78.20.Jq Electro-optical effects

Trace detection in gases using phase fluctuation optical heterodyne spectroscopy

Christopher C. Davis

Appl. Phys. Lett. 36, 515 (1980); http://dx.doi.org/10.1063/1.91590 (4 pages) | Cited 25 times

Online Publication Date: 23 July 2008

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A very sensitive technique for detecting trace molecules in the gas phase is described. Refractive index changes of a gaseous sample, which result following V→R, T relaxation of trace molecules which have been excited by a laser, are detected by optical heterodyning in a Mach‐Zender interferometer. Detection sensitivities of 10 ppb for SF6 in air and 40 ppb for CH3OH in helium, have been demonstrated using CO2 TEA laser excitation and a 20‐MHz detection bandwidth.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.60.-v Laser optical systems: design and operation
07.60.Ly Interferometers

InGaAsP double heterostructure lasers (λ=1.3 μm) with etched reflectors

P. D. Wright, R. J. Nelson, and T. Cella

Appl. Phys. Lett. 36, 518 (1980); http://dx.doi.org/10.1063/1.91565 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Discrete InGaAsP double heterostructure lasers (λ=1.3 μm) have been fabricated by a novel batch process which incorporates chemically etched end reflectors. The etched‐mirror lasers have threshold current densities as low as 3.5 kA/cm2. The average threshold current density for the etched‐mirror lasers is approxiamtely 40% higher than for standard cleaved‐mirror devices fabricated from the same wafer. The laser fabrication process permits batch fabrication of a much wider variety of discrete laser geometries than conventional laser‐cleaving techniques.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Mode‐stabilized separated multiclad layer stripe geometry GaAlAs double heterostructure laser

H. Ishikawa, N. Takagi, S. Ohsaka, K. Hanamitsu, T. Fujiwara, and M. Takusagawa

Appl. Phys. Lett. 36, 520 (1980); http://dx.doi.org/10.1063/1.91591 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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A new stripe geometry GaAlAs double heterostructure laser with built‐in optical waveguide to stabilize the transverse mode parallel to the junction plane is developed. A novel optical waveguide and internal current confinement structure are realized in the structure. Lasers with strip width 4.7 μm and cavity length 200 μm showed cw threshold currents of 45–70 mA and highly stable transverse and longitudinal single‐mode lasing.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Blazed dielectric gratings with high beam‐coupling efficiencies

A. Gruss, K. T. Tam, and T. Tamir

Appl. Phys. Lett. 36, 523 (1980); http://dx.doi.org/10.1063/1.91592 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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By using microwave models of optical gratings, we have realized dielectric gratings with asymmetric triangular or trapezoidal profiles that exhibit beam‐coupling efficiencies in excess of 90% over wide ranges of frequencies and grating parameters. These desirable properties are consistent with the behavior predicted by a Bragg scattering analysis of the grating operation, as well as with numerical data provided by an exact solution.
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42.82.-m Integrated optics
42.25.Fx Diffraction and scattering
42.79.Dj Gratings
84.40.Az Waveguides, transmission lines, striplines

Grating‐coupled optical imaging using an acoustoelectric memory correlator

K. L. Wang, J. H. Goll, and G. S. Kino

Appl. Phys. Lett. 36, 526 (1980); http://dx.doi.org/10.1063/1.91566 (3 pages)

Online Publication Date: 23 July 2008

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A new method of acoustically scanned optical imaging using a gap‐coupled Schottky‐diode/LiNbO3 memory correlator is reported. A periodically modulated light intensity pattern is used to create a space‐charge grating pattern in the diode array. Image scanning is accomplished by a surface acoustic wave (SAW) propagating on a LiNbO3 delay line. The evanescent rf field accompanying the SAW is coupled to the diode array through a narrow air gap (∼3000 Å). Nonlinear depletion‐layer mixing of the electric fields associated with the charge grating and the SAW gives a line scan of the light intensity pattern. Linear imaging has been demonstrated at an optical wavelength of 6328 Å.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
72.50.+b Acoustoelectric effects

pn‐diode array optical imager scanned with a single acoustic surface wave pulse

S. Stueflotten

Appl. Phys. Lett. 36, 528 (1980); http://dx.doi.org/10.1063/1.91567 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A simple image scanning technique applied to the pn‐diode/LiNbO3 airgap convolver structure is described. The image sensor is read out by means of a single acoustic surface wave pulse. Through a nonlinear mixing the output signal is retrieved at the second harmonic of the input frequency. It is essential to the principle of operation that the acoustic wavelength match the diode period. Fourier transform scans of optical images may also be performed by the same device.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
43.60.+d Acoustic signal processing

Influence of surface morphology on the angular distribution and total yield of copper sputtered by energetic argon ions

J. L. Whitton, W. O. Hofer, U. Littmark, M. Braun, and B. Emmoth

Appl. Phys. Lett. 36, 531 (1980); http://dx.doi.org/10.1063/1.91568 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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The angular distribution of 40‐keV‐argon‐sputtered copper has been measured by collecting the copper on a semicircular superpure aluminum foil and later analyzing by 1.8‐MeV‐He backscattering. Comparison has been made of the distributions from a flat surface of (11 3 1) copper and a pyramid‐covered surface of the same orientation. The overall yield from the pyramid‐covered surface is ∼50% greater than from the flat. This result is in contradiction to earlier reports of sputtering yields from flat and rough surfaces. Directional effects of sputtering are observed from both flat and pyramid‐covered surfaces with enhancement by a factor of ∼4 in the latter case.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Laser photoelectron spectrometry measurement of characteristic electronic and vibrational temperatures of sputtered negative ions

Reed R. Corderman, P. C. Engelking, and W. C. Lineberger

Appl. Phys. Lett. 36, 533 (1980); http://dx.doi.org/10.1063/1.91569 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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The techniques of laser photoelectron spectrometry are used to characterize directly the internal energy distribution of sputtered negative ions. Effective temperatures of Telec≈1500±500 K and Tvib ≈5000±1000 K are determined. The excited electronic and vibrational state populations are not in equilibrium, in contrast to predictions of the local thermodynamic equilibrium model of sputtering.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Acoustic phenomena in erosion of spark‐gap electrodes

R. A. Petr and T. R. Burkes

Appl. Phys. Lett. 36, 536 (1980); http://dx.doi.org/10.1063/1.91570 (2 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Experiments have been conducted to show that acoustic waves generated in the electrode material may cause an order‐of‐magnitude increase in the rate of electrode erosion. This increase is due to the arrival of reflected acoustic waves at the electrode surface while arc ’’spots’’ are still molten.
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52.80.Vp Discharge in vacuum
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
43.40.+s Structural acoustics and vibration
52.80.Pi High-frequency and RF discharges

A pulsed vapor source for use in ion sources for heavy‐ion accelerators

J. Shiloh, W. Chupp, A. Faltens, D. Keefe, C. Kim, S. Rosenblum, and M. Tiefenback

Appl. Phys. Lett. 36, 537 (1980); http://dx.doi.org/10.1063/1.91571 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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A pulsed cesium vapor source for use in ion sources for high‐current heavy‐ion accelerators is described. The source employs a vacuum spark in Cs and its properties are measured with a hot‐filament Cs detector.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Vp Discharge in vacuum

Electron mobility in compensated GaAs and AlxGa1−xAs

G. B. Stringfellow

Appl. Phys. Lett. 36, 540 (1980); http://dx.doi.org/10.1063/1.91572 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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A term μCA in electron mobility proportional to T−1/2 is observed in highly compensated GaAs and AlxGa1−xAs. μCA has previously been thought to be due to space‐charge scattering. Illumination with above‐band‐gap light is found to have no effect on μCA. Thus it could not be due to scattering from space‐charge regions, which are collapsed by such illumination. μCA is found to be proportional to N−1A in nonintentionally doped specimens where C is the major shallow acceptor. For intentional compensation with Ge and Zn, no decrease in μCA is observed. μCA may be due to scattering from the local central‐cell potential of the strongly electronegative C.
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72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects

Laser annealing of Bi‐implanted ZnTe

A. Bontemps, S. U. Campisano, G. Foti, G. Mondio, and G. Saitta

Appl. Phys. Lett. 36, 542 (1980); http://dx.doi.org/10.1063/1.91573 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Bismuth‐implanted zinc telluride has been annealed by high‐power ruby laser pulses. Owing to its band gap (2.28 eV) the crystalline ZnTe is transparent to the ruby radiation while the implanted material is absorbing, leading to selective annealing. Channeling and reflectivity measurements indicate a progressive reordering with increasing energy density.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Interfacial order in epitaxial NiSi2

K. C. R. Chiu, J. M. Poate, L. C. Feldman, and C. J. Doherty

Appl. Phys. Lett. 36, 544 (1980); http://dx.doi.org/10.1063/1.91574 (4 pages) | Cited 34 times

Online Publication Date: 23 July 2008

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High‐quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing‐angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single‐crystal values and permit examination of the silicide‐silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm2.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Fq Growth from melts; zone melting and refining
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Correlation of the structure and electrical properties of ion‐implanted and laser‐annealed silicon

A. G. Cullis, H. C. Webber, and N. G. Chew

Appl. Phys. Lett. 36, 547 (1980); http://dx.doi.org/10.1063/1.91575 (4 pages) | Cited 39 times

Online Publication Date: 23 July 2008

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Both transmission electron microscopy and four‐point probe measurements have been used to compare the structure and electrical properties of As+‐ and P+‐ion‐implanted and Q‐switched laser‐annealed Si. Use of a uniform laser beam permitted accurate correlations to be made. It was found that the thickness of the initial amorphous surface layer controlled the radiation energy densities required for annealing onset and completion. Annealing onset variations were probably due to changes in the coupling of the radiation with the ion‐damaged region. The variation in depth distribution of residual defects with changes in annealing conditions has been determined and shown often to produce a two‐stage annealing characteristic. The effect of such defects on annealed‐layer electrical properties has been determined. The presence of very‐small‐scale undulations on annealed surfaces is thought to be due to the propagation of shock waves through the annealed region.
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
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