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15 Apr 1980

Volume 36, Issue 8, pp. 613-716

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Hysteresis and optical bistability in degenerate four‐wave mixing

Herbert G. Winful and John H. Marburger

Appl. Phys. Lett. 36, 613 (1980); http://dx.doi.org/10.1063/1.91625 (2 pages) | Cited 36 times

Online Publication Date: 23 July 2008

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The intensity‐dependent refractive index leads to hysteresis and optical bistability in degenerate four‐wave mixing processes (DFWM). Bistability may be observed in the phase conjugate signal or in the ’’spontaneous’’ oscillation possible in DFWM. This bistability does not require external resonant cavities.
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63.10.+a General theory

Simple metal‐vapor recombination lasers using segmented plasma excitation

W. T. Silfvast, L. H. Szeto, and O. R. Wood

Appl. Phys. Lett. 36, 615 (1980); http://dx.doi.org/10.1063/1.91626 (3 pages) | Cited 23 times

Online Publication Date: 23 July 2008

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A new type of electrically excited laser device has been developed using a new pumping scheme which involves segmented plasma excitation and recombination (SPER). SPER laser action is produced in a metal species when a series of small vaporized plasmas, formed in the gaps between a row of metal electrodes subjected to a high‐voltage pulse, is allowed to expand and recombine. To date, laser action at 17 wavelengths between 0.94 and 1.84 μm in 8 metal vapors has been observed. This device is simple to construct, has a long operating life, and has the potential for high efficiency.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

60‐ns E‐beam excitation of rare‐gas halide lasers

C. B. Edwards, F. O’Neill, and M. J. Shaw

Appl. Phys. Lett. 36, 617 (1980); http://dx.doi.org/10.1063/1.91627 (4 pages) | Cited 34 times

Online Publication Date: 23 July 2008

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We have measured the intrinsic efficiency of ArF, KrF, XeCl, and XeF lasers using 60‐ns e‐beam pumping at an excitation rate of 1.5 MW/cm3. Efficiencies between 3 and 11% have been obtained. These values are shown to be limited by the time required to build up oscillation in the laser cavity, and we have demonstrated a technique which can be used to overcome this problem. Peak power efficiencies of these lasers are calculated to be in the range 5–15%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Control of XeF laser output by pulse injecton

Thomas J. Pacala and C. P. Christensen

Appl. Phys. Lett. 36, 620 (1980); http://dx.doi.org/10.1063/1.91628 (4 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Injection locking is investigated as a means for control of optical pulse duration and polarization in a XeF laser. Intense short‐pulse generation in the ultraviolet is achieved by injection of a low‐level 1‐ns optical pulse into a XeF oscillator. Control of laser output polarization by injection locking is demonstrated and studied as a function of injected signal level. Enhancement of XeF electric‐discharge laser efficiency by injection pulse ’’priming’’ is observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Hp Optical processors, correlators, and modulators

A picosecond jitter streak camera

G. Mourou and W. Knox

Appl. Phys. Lett. 36, 623 (1980); http://dx.doi.org/10.1063/1.91629 (4 pages) | Cited 34 times

Online Publication Date: 23 July 2008

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A light‐activated silicon switch is used to sweep a picosecond‐resolution streak camera with less than 2 ps of shot‐to‐shot zero‐time fluctuation. This temporal accuracy allows shot accumulation leading to increased signal‐to‐noise ratio and further increase in timing accuracy. Subpicosecond accuracy is demonstrated and is used to time picosecond transients.
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07.68.+m Photography, photographic instruments; xerography

Method for measuring the rf modulation characteristics of Mach‐Zehnder‐type modulators

F. Auracher and R. Keil

Appl. Phys. Lett. 36, 626 (1980); http://dx.doi.org/10.1063/1.91630 (4 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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We derive the frequency spectrum of the light output from Mach‐Zehnder‐type waveguide modulators and demonstrate the excellent agreement of the experimental results with theory. From the measurement of the frequency spectrum the rf modulation characteristics can be deduced. This method is advantageous as it permits the evaluation of the modulator performance up to frequencies above 1 GHz without requiring high optical power, thus eliminating the risk of optical damage in the waveguides. The tested modulator shows a 3‐dB cutoff frequency of 1.1 GHz; the figure of merit is Q≈130 μW/MHz.
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42.82.-m Integrated optics
42.81.-i Fiber optics
42.60.Fc Modulation, tuning, and mode locking
42.79.Gn Optical waveguides and couplers

Whispering gallery lasers on semi‐insulating GaAs substrates

I. Ury, S. Margalit, N. Bar‐Chaim, M. Yust, D. Wilt, and A. Yariv

Appl. Phys. Lett. 36, 629 (1980); http://dx.doi.org/10.1063/1.91631 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Double heterostructure lasers are described in which light is guided by total internal reflection along a dielectric interface formed by the perimeter of an etched mesa. By means of the crowding effect, injection current is restricted to a narrow strip adjacent to the edge of the mesa. This results in the preferential excitation of optical modes which are localized in the vicinity of the dielectric interface. Both half‐ring lasers formed at a single cleaved facet and quarter‐ring lasers formed at a cleaved corner were fabricated.
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42.55.Px Semiconductor lasers; laser diodes

Hemispherical emittance of rough metal surfaces

Sten Löfving

Appl. Phys. Lett. 36, 632 (1980); http://dx.doi.org/10.1063/1.91605 (2 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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In this letter it is shown that surface roughness causes a pronounced increase in emittance for metal substrates. This is very important for solar‐selective surfaces. With the help of laser absorptance measurements at wavelengths around 10 μm we show that it is plausible that coupling between thermally excited surface plasmons and free propagating waves at rough metal surfaces causes thermal radiation.
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44.40.+a Thermal radiation
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Narrow double‐current‐confinement channeled‐substrate planar laser fabricated by double etching technique

Chung‐Yih Chen and Shyh Wang

Appl. Phys. Lett. 36, 634 (1980); http://dx.doi.org/10.1063/1.91606 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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The double‐current‐confinement channeled‐substrate planar (DCC‐CSP) laser, fabricated by the newly developed double etching technique, with channel width smaller than carrier diffusion length is demonstrated. In the majority of the 2‐μm DCC‐CSP lasers tested, linear light‐current relation and stable fundamental‐mode operation have been uniformly observed over the range of current tested (up to 3–5Jth). The lasers operate in single longitudinal mode with fixed emission wavelength up to 2.2Jth. The narrow‐channel DCC structure offers a method to relax the stringent design tolerance in the conventional CSP laser.
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42.55.Px Semiconductor lasers; laser diodes

UV picosecond pulse amplification by a XeCl laser

Mitsuo Maeda, Toru Mizunami, Akio Sato, Osamu Uchino, and Yasushi Miyazoe

Appl. Phys. Lett. 36, 636 (1980); http://dx.doi.org/10.1063/1.91607 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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A UV‐preionized discharge‐pumped XeCl excimer laser effectively amplified the frequency‐doubled picosecond (3–4 ps) pulses generated by a passively mode‐locked flashlamp‐pumped rhodamine 6G dye laser tuned to the 308‐nm band. The peak power of the amplified pulse is 710 MW, and the net power gain is 151. The proposed scheme is promising for the construction of a scalable high‐power ultrashort‐pulse generator in the UV region.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Field‐assisted photoemission to 2.1 microns from a Ag/p‐In0.77Ga0.23As photocathode

P. E. Gregory, J. S. Escher, R. R. Saxena, and S. B. Hyder

Appl. Phys. Lett. 36, 639 (1980); http://dx.doi.org/10.1063/1.91608 (2 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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Reflection‐mode photoemission to a 2.1‐μm threshold has been achieved from an externally biased Ag/p‐In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4‐V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor‐phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Ha Photomultipliers; phototubes and photocathodes
79.60.Jv Interfaces; heterostructures; nanostructures

Photoacoustic effect with thermally thin solids

Thomas P. Crowley, Frederick R. Faxvog, and David M. Roessler

Appl. Phys. Lett. 36, 641 (1980); http://dx.doi.org/10.1063/1.91609 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Photoacoustic signals from opaque thermally thin solids (Ni, Al, and SiC) with a gas backing have an ω−3/2 frequency dependence. This first experimental observation of such a dependence from thin solids is in excellent agreement with the Rosencwaig‐Gersho theory when a low‐conductivity backing material is considered, but in disagreement with predictions based on the theory of Cesar et al. Surface heat conductance is determined by molecular collisions with the surface and not by blackbody radiative transfer.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Low‐temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering

T. Shiosaki, T. Yamamoto, T. Oda, and A. Kawabata

Appl. Phys. Lett. 36, 643 (1980); http://dx.doi.org/10.1063/1.91610 (3 pages) | Cited 54 times

Online Publication Date: 23 July 2008

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A single‐crystalline aluminum nitride film is grown on a basal‐plane sapphire substrate and the c‐axis‐oriented films are grown on glass and gold‐film substrates at substrate temperatures as low as from 50 to 500 °C by using reactive rf planar magnetron sputtering. Surface acoustic waves are generated in both structures where interdigital transducers are located on the top of an aluminum nitride film and at the interface between the film and the substrate sapphire. The effective surface acoustic wave coupling factor k2 is 0.09 and 0.12%, respectively, for these interdigital transducer configurations. The aluminum nitride films sputtered on a gold film on a glass rod and on a glass sheet itself are also piezoelectric and used as bulk and surface acoustic wave transducers, respectively. These piezoelectric aluminum nitride films on glass and metal‐film substrates have become available for the first time because film growth at low temperature has become possible in the present study.
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43.38.Fx Piezoelectric and ferroelectric transducers
81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

High‐power ion beam generation with an inverse reflex tetrode

J. A. Pasour, R. A. Mahaffey, J. Golden, and C. A. Kapetanakos

Appl. Phys. Lett. 36, 646 (1980); http://dx.doi.org/10.1063/1.91611 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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A new reflexing‐electron ion source is described. The device produces a unidirectional ion beam with relatively high efficiency even when the applied magnetic field exceeds the self‐field. This new source operates at a low, constant impedance during much of the applied voltage pulse and is better matched to available high‐power, low‐impedance generators than previous reflexing‐electron devices. Proton pulses with peak current ∼500 kA have been produced with the inverse reflex tetrode coupled to the Gamble II generator.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
29.27.Eg Beam handling; beam transport

Effects of the beamfront velocity on collective acceleration with relativistic electron beams

D. N. Spector, K. A. Gerber, R. A. Mahaffey, R. A. Meger, and J. D. Sethian

Appl. Phys. Lett. 36, 649 (1980); http://dx.doi.org/10.1063/1.91612 (3 pages)

Online Publication Date: 23 July 2008

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Observations of accelerated protons during the injection of rotating relativistic electron beams into neutral hydrogen (50–400 mTorr) indicate that ions from the beam‐formed plasma are trapped and accelerated by a potential well at the beamfront. Measurements show that the number of accelerated protons decreases as the beamfront velocity is increased. Moreover, at a given velocity, the number accelerated is relatively insensitive to the neutral gas pressure.
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52.40.Mj Particle beam interactions in plasmas
52.75.Di Ion and plasma propulsion
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
41.75.Fr Electron and positron beams

Classical absorption and heat conduction in low‐irradiance, long‐pulse CO2‐laser‐plasma interactions

A. Montes, M. Hubbard, C. Kler, and I. J. Spalding

Appl. Phys. Lett. 36, 652 (1980); http://dx.doi.org/10.1063/1.91613 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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See Also: Erratum

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A self‐regulating model of classical collisional absorption and heat conduction is shown to adequately explain cold‐electron temperatures measured in low‐irradiance, long‐pulse CO2‐laser‐plasma experiments at Culham. The absorption predicted by the model is a large fraction of the very high experimentally measured absorption and the predicted density scale length agrees very well with the experimental value.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Kn Thermodynamics of plasmas
52.25.Fi Transport properties
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Deep‐level changes in (Al,Ga)As double‐heterostructure lasers degraded during accelerated aging at high temperatures

T. Uji, T. Suzuki, and T. Kamejima

Appl. Phys. Lett. 36, 655 (1980); http://dx.doi.org/10.1063/1.91614 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Deep levels in (Al,Ga)As double‐heterostructure lasers have been studied by deep‐level transient spectroscopy during accelerated aging at junction temperatures in the 120–320 °C range. A marked correlation has been found between the concentration increase of a hole trap and the threshold increase in degraded lasers. This hole trap is at 0.24 eV from the valence band in the n‐AlGaAs passive layer. Capture cross section of this level at 145 K was 2×10−19 cm2 for electron capture and ≳5×10−15 cm2 for hole capture. The 0.24‐eV‐trap increasing rate was accelerated with an activation energy of 0.54±0.07 eV as the aging temperature was raised. The 0.24‐eV trap seems to be closely related to the ’’slow long‐term degradation’’ in (Al,Ga)As lasers and LED’s, which limits the lifetime of these devices to 105–106 h at room temperature.
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85.60.Jb Light-emitting devices
61.72.-y Defects and impurities in crystals; microstructure
42.55.Px Semiconductor lasers; laser diodes
78.40.Fy Semiconductors

Reduction of saucer pit microdefects in epitaxial silicon wafer by intrinsic gettering

Hideki Tsuya, Kohetsu Tanno, and Fumio Shimura

Appl. Phys. Lett. 36, 658 (1980); http://dx.doi.org/10.1063/1.91615 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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The reduction of microdefects in epitaxial silicon wafers is achieved by a two‐step annealing consisting of dry O2 and wet O2 heat treatments based on intrinsic gettering. The gettering mechanism is investigated by means of infrared absorption, an etching procedure, and transmission electron microscopy. It has been found that inner defects which are correlated with the gettering action after the second annealing are classified into three groups depending on the first annealing temperatures from 700 to 1050 °C, that is, small stacking faults, cristobalites, and climbing dislocations are dominant in samples annealed at ≲800, 800∼900, and ≳900 °C, respectively. The depth of the denuded zone is also discussed.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.J- Point defects and defect clusters
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Multiscanning electron beam annealing of phosphorus‐implanted silicon

G. G. Bentini, R. Galloni, and R. Nipoti

Appl. Phys. Lett. 36, 661 (1980); http://dx.doi.org/10.1063/1.91616 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

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(100) Si wafers implanted with 31P+ ions (100 keV, 2×1015 cm−2) have been annealed with a multiscanning electron beam by using a fusion electron gun. The main results obtained are (i) the multiscan electron beam annealing technique can be used to obtain excellent annealing of the damaged layer, (ii) the electrical activity and the mobility values of electron‐annealed specimens are the same as for control samples annealed at 900 °C for 30 min., (iii) in contrast with furnace annealing, the multiscan electron beam annealing technique does not degrade the lifetime of the base material, and (iv) carrier concentration profiles obtained by the stripping and Van der Pauw techniques indicates that no diffusion of the implanted ions takes place.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
41.75.Fr Electron and positron beams
72.20.-i Conductivity phenomena in semiconductors and insulators
61.72.U- Doping and impurity implantation

New radiative deep states in epitaxial Ga1−xAlxAs

P. K. Bhattacharya, S. J. T. Owen, and J. Marrs

Appl. Phys. Lett. 36, 664 (1980); http://dx.doi.org/10.1063/1.91617 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Photoluminescence measurements performed at 6–7 K on intentionally undoped n‐type liquid‐phase epitaxy Ga1−xAlxAs (0.19⩽x⩽0.78) reveal transitions involving energies significantly lower than the band gap for crystals with x⩾0.47. Analysis of the luminescence data as a function of excitation intensity shows the presence of deep‐level acceptors which participate in radiative transitions, and binding energies of 0.52, 0.48, and 0.56 eV are obtained for x=0.47, 0.50, and 0.61, respectively. These values are strikingly similar to the activation energies of hole traps which are present in crystals with x=0.50, 0.61, and 0.78 and strongly suggests that the radiative acceptors and the hole traps are either identical or related states. Electron trap levels which are also present in the same crystal are found to be nonradiative.
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78.40.Fy Semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.35.-y Excitons and related phenomena

Photoacoustic study of laser damage in thin films

Allan Rosencwaig and J. B. Willis

Appl. Phys. Lett. 36, 667 (1980); http://dx.doi.org/10.1063/1.91618 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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We have developed a photoacoustic method that is capable of detecting the occurrence of laser damage in optical thin films and of providing new data about energy transfer processes in the presence of damage.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.-e Optical properties of bulk materials and thin films

Hydrogen passivation of point defects in silicon

J. L. Benton, C. J. Doherty, S. D. Ferris, D. L. Flamm, L. C. Kimerling, and H. J. Leamy

Appl. Phys. Lett. 36, 670 (1980); http://dx.doi.org/10.1063/1.91619 (2 pages) | Cited 98 times

Online Publication Date: 23 July 2008

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Laser melting of crystalline silicon introduces electrically active defects which are observed by capacitance transient spectroscopy. The electrical activity of these point defects is neutralized by reaction with atomic hydrogen at 200 °C.
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78.40.Fy Semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Gh Other heat and thermomechanical treatments

Monte Carlo simulation of registration signals for electron beam microfabrication

Yi‐Ching Lin, Ilesanmi Adesida, and Andrew R. Neureuther

Appl. Phys. Lett. 36, 672 (1980); http://dx.doi.org/10.1063/1.91604 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
Monte Carlo calculations based on a continuous‐slowing‐down‐approximation (CSDA) model have been carried out to study the backscattered electron image formation of a 54.6° tapered etched step registration mark in silicon. It is found that the energy signal gives slightly better contrast and greater average slope than the number signal. The constrast increases with step depth and is very close to its maximum value of 1.4 when the step depth is increased to 40% of the Bethe range of the primary beam. Additional step depth will degrade the signal shape. A universal curve of the average signal slope as a function of the normalized horizontal mark transition is also presented.
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79.20.Kz Other electron-impact emission phenomena
02.50.Ng Distribution theory and Monte Carlo studies
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

The role of cesium suboxides in low‐work‐function surface layers studied by x‐ray photoelectron spectroscopy: Ag‐O‐Cs

Sheng‐Jenn Yang and Clayton W. Bates

Appl. Phys. Lett. 36, 675 (1980); http://dx.doi.org/10.1063/1.91620 (3 pages) | Cited 21 times

Online Publication Date: 23 July 2008

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The oxidation of cesium on silver substrates has been studied using photoyield measurements and x‐ray photoelectron spectroscopy. The occurrence of two O1s peaks in the core‐level spectrum at 527.5 and 531.5‐eV binding energy for cesium and oxygen exposures giving the optimum photoyield proves that two oxides of cesium exist in high‐photoyield surfaces, and not Cs2O alone as previously thought. From the shape and position of the cesium peaks and the Auger parameter, the assignment of the O1s peaks at 527.5‐ and 531.5‐eV binding energies to oxygen in Cs2O and Cs11O3, respectively, can be made. Hence the total cesium‐oxygen layer is a mixed phase consisting of Cs2O+Cs11O3, approximately 20–40 Å thick.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Jv Interfaces; heterostructures; nanostructures

Effect of disorder on the hydrogen content in Si+

P. S. Peercy, H. J. Stein, and D. S. Ginley

Appl. Phys. Lett. 36, 678 (1980); http://dx.doi.org/10.1063/1.91621 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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Hydrogen concentrations in disordered silicon were measured after exposure to a low‐energy hydrogen rf discharge plasma at temperatures between 300 and 425 °C. The saturation hydrogen concentration is found to increase with disorder until amorphization is reached, whereupon the hydrogen content decreases. These results demonstrate that the amorphous structure cannot be considered as a simple extension of a highly defected crystalline structure. We further find that the hydrogen in a‐Si exposed to atomic hydrogen in a plasma is bonded only in the monohydride site with an infrared absorption band at ν=1985 cm−1.
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61.72.U- Doping and impurity implantation
81.05.Kf Glasses (including metallic glasses)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
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