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1 Jul 1980

Volume 37, Issue 1, pp. 1-114

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Degenerate four‐wave mixing of 10.6‐μm radiation in Hg1−xCdxTe

R. K. Jain and D. G. Steel

Appl. Phys. Lett. 37, 1 (1980); http://dx.doi.org/10.1063/1.91685 (3 pages) | Cited 16 times

Online Publication Date: 22 July 2008

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We report observation of a large nonlinear optical susceptibility in HgCeTe for degenerate four‐wave mixing of 10.6‐μm radiation. Using pump pulses of 180 ns duration and 160 kW/cm2 peak intensity, nonlinear reflection coefficients of oiver 10% have been observed. The experimentally measured value of χ(3) is approximately 5.4×10−6 esu, in reasonable agreement with calculations based on a Drude model for the optically generated plasma. We have also observed nonlinear Fabry Perot effects in our samples.
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42.65.-k Nonlinear optics
42.70.-a Optical materials
42.79.-e Optical elements, devices, and systems
78.20.-e Optical properties of bulk materials and thin films

Nonlinear optical amplification in a nematic liquid crystal above the Frederiks transition

I. C. Khoo and Shu‐Lu Zhuang

Appl. Phys. Lett. 37, 3 (1980); http://dx.doi.org/10.1063/1.91695 (2 pages) | Cited 38 times

Online Publication Date: 22 July 2008

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We have observed a new nonlinear light amplification process in a nematic liquid crystal, p‐methoxybenzylidene‐p‐n‐butylaniline, maintained above the Frederiks transition by a magnetic field. Substantial probe‐beam gain (10% or more) was observed for a moderate same‐frequency pump beam of intensity on the order of W/cm2, and is attributed to the molecular anisotropy associated with the director axis reorientation. The observed gain and nonlinear intensity dependence are in excellent quantitative agreement with theoretical predictions. An analogous effect is also observed for the case when the Fredericks transition is caused by a dc electric field.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.25.Lc Birefringence
42.65.-k Nonlinear optics

Real‐time image processing via four‐wave mixing in a photorefractive medium

Jeffrey O. White and Amnon Yariv

Appl. Phys. Lett. 37, 5 (1980); http://dx.doi.org/10.1063/1.91700 (3 pages) | Cited 77 times

Online Publication Date: 22 July 2008

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We report the application of four‐wave mixing to real‐time image processing. We constructed a nonlinear optical processor using a photorefractive medium Bi12SiO20 and demonstrated that it is capable of convolving and correlating objects with spatial information.
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42.65.-k Nonlinear optics
42.40.-i Holography
42.30.Kq Fourier optics
42.30.Sy Pattern recognition

Liquid‐phase‐epitaxy homostructure Pb0.85Sn0.15Te diode laser with controlled carrier concentration

M. Oron and A. Zussman

Appl. Phys. Lett. 37, 7 (1980); http://dx.doi.org/10.1063/1.91710 (3 pages) | Cited 11 times

Online Publication Date: 22 July 2008

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Homostructure Pb0.85Sn0.15Te diode lasers were fabricated from a liquid‐phase‐epitaxy grown n+ ‐p‐p+ layer structure. Pulsed threshold currents as low as 40 A/cm2 at 17 °K and 1.5 kA/cm2 at 77 °K were measured. High external and internal quantum efficiencies of 17 and 34%, respectively, were found at 40 °K. No degradation of the threshold current was detected after fifteen thermal cycles.
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42.55.Rz Doped-insulator lasers and other solid state lasers

Reduction of GaAs diode laser spontaneous emission

W. Streifer, F. A. Ponce, and D. R. Scifres

Appl. Phys. Lett. 37, 10 (1980); http://dx.doi.org/10.1063/1.91681 (3 pages) | Cited 4 times

Online Publication Date: 22 July 2008

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Spontaneous emission from GaAs lasers is substantially reduced by fabricating a high‐reflection dielectric stack coating for the rear facet and apertured coatings of highly absorbing Te for the front (output) facet. After deposition the Te is ablated by the laser mode itself and the aperture is stabilized by Al2O3 overcoating. The stimulated emission at mode center passes through the aperture unattenuated, whereas the spontaneous emission at the edges of the mode is strongly absorbed. Since spontaneous emission at mode center saturates above threshold we estimate that the ratio of stimulated to spontaneous power will approach 100 at near‐10‐mW output levels.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.62.-b Laser applications
42.79.Wc Optical coatings

Multiple‐pulse thermal coupling at 3.8‐μm wavelength

W. E. Maher, D. B. Nichols, and R. B. Hall

Appl. Phys. Lett. 37, 12 (1980); http://dx.doi.org/10.1063/1.91676 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2008

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Pulsed DF laser irradiation of 2024‐T3 aluminum in normal air produced increases in air‐plasma‐enhanced energy absorption after repeated exposures of the same target. For a sequence of pulses, the absorbed fluence per pulse increased on each shot until it reached a value more than twice that seen on the first pulse. The effect is believed to be due to surface roughening caused by melting and vaporization.
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42.62.-b Laser applications
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å)

J. J. Coleman, P. D. Dapkus, B. A. Vojak, W. D. Laidig, N. Holonyak, and K. Hess

Appl. Phys. Lett. 37, 15 (1980); http://dx.doi.org/10.1063/1.91683 (3 pages) | Cited 14 times

Online Publication Date: 22 July 2008

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Data are presented on photopumped metallorganic chemically vapor‐deposited AlxGa1−xAs‐GaAs quantum‐well heterostructures with active regions consisting of a large GaAs quantum well (Lz1∼200, 500 Å) coupled to a phonon generating array of seven small GaAs wells (Lz2∼50 Å). Phonon‐sideband laser operation below the confined‐carrier transitions of the large GaAs quantum well(s) is induced by the large number of phonons generated in the smaller GaAs wells. The induced phonon‐sideband laser operation (of a larger quantum well by an array of smaller wells) leads to a measurement of the energy difference between the first‐state light‐ and heavy‐hole energies of a 200‐Å GaAs quantum well (4.9 meV) and directly to the GaAs L0‐phonon energy hωL0≈41.0−4.9=36.1 meV.
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42.55.Px Semiconductor lasers; laser diodes
78.55.-m Photoluminescence, properties and materials
71.38.-k Polarons and electron-phonon interactions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Fast nondamageable laser‐pulse detector using gaseous plasma

Ernest E. Bergmann, Edward J. McLellan, and John A. Webb

Appl. Phys. Lett. 37, 18 (1980); http://dx.doi.org/10.1063/1.91684 (2 pages) | Cited 3 times

Online Publication Date: 22 July 2008

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We investigated pulsed laser radiation detectors in which the emf is generated by the plasma formed when the radiation is focused onto a solid metal surface. We report on measurements made with 10.6‐μn laser pulses at peak power levels up to 100 MW. For an evacuated detector, we obtained signals ≳1 kV and subnanosecond rise times into a 50‐Ω load. Detector performance is strongly modified with the introduction of a background gas. With one atmosphere of air, the detector produces signals on the order of 1 V and nanosecond response for pulse trains lasting 100 ns, and is thus a good qualitative beam monitor. With argon, krypton, or xenon at pressures on the order of 10 Torr, the detector generates ’’trigger pulses’’ of 250‐V amplitude and <0.2‐ns rise times. These detectors are indestructable.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
79.20.Ds Laser-beam impact phenomena

An optical TE‐TM mode splitter using a LiNbO3 branching waveguide

Masamitsu Masuda and Gar Lam Yip

Appl. Phys. Lett. 37, 20 (1980); http://dx.doi.org/10.1063/1.91686 (3 pages) | Cited 13 times

Online Publication Date: 22 July 2008

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A novel optical TE‐TM mode splitter using a Ti‐diffused branching waveguide in Y‐cut LiNbO3 is proposed and demonstrated. Mode splitting has been confirmed experimentally at an applied voltage V0=−20 V.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Laser light absorption by a plasma with a very steep density gradient

G. P. Banfi, P. G. Gobbi, S. Morosi, and G. C. Reali

Appl. Phys. Lett. 37, 23 (1980); http://dx.doi.org/10.1063/1.91687 (3 pages) | Cited 3 times

Online Publication Date: 22 July 2008

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We investigated the behavior of reflectivity versus angle of incidence of a Cu target irradiated by 4‐ps laser pulses at 1.06 μm. From the data taken at 1013–1014 W/cm2 we show that optical resonance takes place also in the presence of very steep density gradients of the order of ∼0.15 μm. The role of collisions is discussed and illustrated by measurements taken at lower fluxes.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.20.Fs Electron collisions
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

High‐temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μm

J. J. Hsieh

Appl. Phys. Lett. 37, 25 (1980); http://dx.doi.org/10.1063/1.91688 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2008

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cw operation at temperatures up to 55 °C has been achieved for GaInAsP/InP double‐heterostructure lasers emitting at 1.5 μm which were grown without a GaInAsP buffer layer.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Regenerative compression of laser pulses

J. E. Murray and D. J. Kuizenga

Appl. Phys. Lett. 37, 27 (1980); http://dx.doi.org/10.1063/1.91689 (4 pages) | Cited 9 times

Online Publication Date: 22 July 2008

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We report stable temporal compression of mode‐locked laser pulses using a saturable dye in a regenerative amplifier. We have demonstrated compression at 1.06 μm from 120 to 15 ps with energy stability better than ±5%, and we have demonstrated synchronization of the compressed pulse to pulses as long as 1000 ps.
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42.60.By Design of specific laser systems
42.65.-k Nonlinear optics
42.62.-b Laser applications

Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy

G. B. Scott, J. S. Roberts, and R. F. Lee

Appl. Phys. Lett. 37, 30 (1980); http://dx.doi.org/10.1063/1.91690 (3 pages) | Cited 6 times

Online Publication Date: 22 July 2008

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cw laser action has been achieved at 77 K in double heterostructures of GaAs/Ga0.47In0.53P grown by molecular beam epitaxy using the dimers P2 and As2. The 6471‐Å line of a krypton laser was used to optically pump 100‐μm‐wide bars of the p isotype structure having an active region thickness of 0.25 μm. Laser action was initiated, as witnessed by the appearance of Fabry Perot modes in the emission and the occurence of a sharp knee in the emitted‐power–pump‐power characteristic, at an absorbed power density of 103 W/cm2.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology

Pulse acousto‐optic modulator using a nematic liquid crystal in its isotropic phase

P. Martinoty and M. Bader

Appl. Phys. Lett. 37, 33 (1980); http://dx.doi.org/10.1063/1.91691 (2 pages) | Cited 2 times

Online Publication Date: 22 July 2008

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A simple and sensitive pulse acousto‐optic modulator using a nematic liquid crystal in its isotropic phase is presented. The effects of acoustic intensity and of temperature are considered. It is shown that modulation can be obtained at very low values of the applied voltage.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
61.30.-v Liquid crystals
42.60.Fc Modulation, tuning, and mode locking
78.20.Fm Birefringence

A theory for the radiation pattern of a narrow‐strip acoustic transducer

A. R. Selfridge, G. S. Kino, and B. T. Khuri‐Yakub

Appl. Phys. Lett. 37, 35 (1980); http://dx.doi.org/10.1063/1.91692 (2 pages) | Cited 19 times

Online Publication Date: 22 July 2008

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An important criterion in the design of transducer array elements for acoustic imaging is the angular response, or the far‐field radiation pattern, of a single element. In this letter, we show that the widely accepted formula for the angular response function is inadequate and must be multiplied by cosϑ. Good agreement with experiment is then obtained.
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43.38.Ar Transducing principles, materials, and structures: general
43.30.Jx Radiation from objects vibrating under water, acoustic and mechanical impedance
43.20.Rz Steady-state radiation from sources, impedance, radiation patterns, boundary element methods
43.20.Tb Interaction of vibrating structures with surrounding medium

A new plasma source, the plasma emitter

K. Saeki, S. Iizuka, N. Sato, and Y. Hatta

Appl. Phys. Lett. 37, 37 (1980); http://dx.doi.org/10.1063/1.91693 (2 pages) | Cited 3 times

Online Publication Date: 22 July 2008

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A new plasma source, the ’’plasma emitter,’’ was successfully developed by using thermionic plasma emission from a mixture of aluminosilicate and barium oxide. At an operating temperature around 1300 K, we have a plasma of density 1×107–2×108 cm−3 and temperature ≃0.16 eV. The plasma emitter, being quite simple in its construction and especially cheap, is very useful for various kinds of plasma experiments and applications.
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52.50.Dg Plasma sources
52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes

Photosensitivity enhancement by H‐ and He‐ion implantation in lead lanthanum zirconate titanate ceramics

C. E. Land and P. S. Peercy

Appl. Phys. Lett. 37, 39 (1980); http://dx.doi.org/10.1063/1.91694 (3 pages) | Cited 8 times

Online Publication Date: 22 July 2008

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H‐ and He‐ion implantation has been used to increase the photoferroelectric image storage sensitivity of lead lanthanum zirconium titanate ceramics by factors of ∼10 and ∼30, respectively. The increased photosensitivity can be attributed primarily to implantation‐produced disorder, which increases the efficiency of carrier photoexcitation and trapping and reduces the exposure energy required to establish nonvolatile space‐charge fields. Implantation‐induced disorder may also contribute to a substantial increase in photoconductivity in the ion‐damaged near‐surface region.
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77.80.-e Ferroelectricity and antiferroelectricity
61.80.-x Physical radiation effects, radiation damage
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Kirkendall void formation in thin‐film diffusion couples

S. Nakahara and R. J. McCoy

Appl. Phys. Lett. 37, 42 (1980); http://dx.doi.org/10.1063/1.91696 (3 pages) | Cited 19 times

Online Publication Date: 22 July 2008

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Transmission electron microscope studies of Sn/Au thin‐film couples reveal complexities associated with the Kirkendall effect in thin films. The use of an offset film fabrication technique permitted the identification of two room‐temperature interdiffusion mechanisms in Sn/Au: grain‐boundary diffusion of Sn into Au, which causes film thinning, and bulk diffusion of Au into Sn, which results in the formation of microscopic Kirkendall voids. The ranges of importance of the two mechanisms were explored by varying the Sn and Au film thicknesses and the grain size. It is pointed out that interdiffusion studies in thin films required careful attention to relative film thicknesses, film geometry, and grain sizes in order to determine the fast‐diffusing species and the operative diffusion mechanisms.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.-h Diffusion in solids
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Confining substrate for micron‐thick liquid films

T. F. Kuech and J. O. McCaldin

Appl. Phys. Lett. 37, 44 (1980); http://dx.doi.org/10.1063/1.91697 (3 pages) | Cited 6 times

Online Publication Date: 22 July 2008

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Suitable combinations of surface geometry and material enable a substrate to hold a thin liquid film captive on its surface. Though only at metastable equilibrium, such films can survive a moderate amount of processing. They may be suited to the growth of semiconductor single‐crystal films on amorphous substrates.
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68.15.+e Liquid thin films

Stress wave profiles in cleaved and undamaged 〈111〉 β‐BaF2 crystals at 4.0 GPa

Dattatraya P. Dandekar, Anthony G. Martin, and John V. Kelley

Appl. Phys. Lett. 37, 46 (1980); http://dx.doi.org/10.1063/1.91698 (3 pages)

Online Publication Date: 22 July 2008

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The results of the present investigation on cleaved and undamaged 〈111〉 crystals of β‐BaF2 show no signs of transformation of β‐ to α‐BaF2 under shock compression, consistent with the idea that the transformation does not occur in the undamaged layer of β‐BaF2. Further, the results suggest that the deformation of 〈111〉 β‐BaF2 crystals is elastic to 4.0 GPa.
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62.50.-p High-pressure effects in solids and liquids
62.30.+d Mechanical and elastic waves; vibrations
64.90.+b Other topics in equations of state, phase equilibria, and phase transitions (restricted to new topics in section 64)

Field‐induced phase transitions in phase‐II poly(vinylidene fluoride)

N. C. Banik, P. L. Taylor, and A. J. Hopfinger

Appl. Phys. Lett. 37, 49 (1980); http://dx.doi.org/10.1063/1.91843 (2 pages) | Cited 8 times

Online Publication Date: 22 July 2008

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A calculation of the free energy of both the polar and nonpolar forms of phase‐II poly(vinylidene fluoride) has been performed by means of a generalized mean‐field approximation. The results show the nonpolar form to be lower in free energy than the polar form, and provide a good estimate of the critical electric field necessary to cause the recently observed, nonpolar‐polar phase transition in this material.
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64.30.-t Equations of state of specific substances
61.41.+e Polymers, elastomers, and plastics

Direct observation of epitaxial islands of Pd2Si on (001) Si

S. Vaidya and S. P. Murarka

Appl. Phys. Lett. 37, 51 (1980); http://dx.doi.org/10.1063/1.91844 (3 pages) | Cited 9 times

Online Publication Date: 22 July 2008

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The formation of epitaxial islands of Pd2Si is reported on (001) Si. These islands are several microns in dimension and distributed heterogeneously in a fine‐grained layer of the same phase. Crystallographic analysis suggests that they nucleate on {111} Si and then grow parallel to the substrate surface.
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68.55.-a Thin film structure and morphology

Low-temperature gettering of Cr in GaAs

T. J. Magee, J. Hung, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 37, 53 (1980); http://dx.doi.org/10.1063/1.91845 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2008

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Gettering of Cr by back-surface damage has been investigated at temperatures in the range 300–400 °C, for anneal periods of 10–300 h. It has been shown that measurable concentrations of Cr can be detected and that the process can be characterized by an activation energy of ≃0.88 eV and a time-dependent term exp(ϑt1/2).
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Incoherent‐light‐flash annealing of phosphorus‐implanted silicon

L. Correra and L. Pedulli

Appl. Phys. Lett. 37, 55 (1980); http://dx.doi.org/10.1063/1.91846 (3 pages) | Cited 22 times

Online Publication Date: 22 July 2008

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Incoherent light pulses emitted from a xenon flash lamp were used to anneal radiation damage in (100) silicon implanted with 2×1015 31P+/cm2 at 100 keV. Electrical carrier concentration has been determined by means of differential sheet resistivity and Hall effect together with the anodic oxidation stripping technique; the surface photovoltage technique has been used to evaluate bulk lifetime and Rutherford backscattering and transmission electron microscopy for analysis of radiation damage. Damage recovery appears to take place via a solid phase epitaxial process. Electrical activity and carrier mobility values of samples annealed by incoherent light are similar to those obtained by laser, electron beam, and furnace annealing. The bulk lifetime of minority carriers is not degraded.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
72.80.Cw Elemental semiconductors

Effect of plasma reflection on open‐circuit voltage of a solar cell at ultrahigh light intensities

V. K. Tewary, L. S. Kothari, and S. C. Jain

Appl. Phys. Lett. 37, 58 (1980); http://dx.doi.org/10.1063/1.91847 (2 pages)

Online Publication Date: 22 July 2008

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It is shown that the observed decrease of open‐circuit voltage of a silicon solar cell for ruby laser light at intensities beyond 105 W/cm2 can be explained by incorporating the effect of plasma reflection of light from the surface of the solar cell.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
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