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15 Nov 1980

Volume 37, Issue 10, pp. 855-967

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Reduction and control of optical waveguide losses in glass

T. Findakly and E. Garmire

Appl. Phys. Lett. 37, 855 (1980); http://dx.doi.org/10.1063/1.91862 (2 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Reproducible waveguides were obtained by diffusion of silver films both with and without an applied electric field. Measurements of the mode, wavelength, and thickness dependences of the loss permit us to identify loss contributions from both the diffusant and also from surface roughness. Reduction of loss was achieved both by burying the waveguide below the surface of the substrate and also by performing measurements in the near infrared.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

An atomic‐fluorine laser pumped by charge transfer from He+2 at high pressures

C. B. Collins, F. W. Lee, and J. M. Carroll

Appl. Phys. Lett. 37, 857 (1980); http://dx.doi.org/10.1063/1.91863 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Scalable laser output at high powers has been obtained from the quartet system of atomic fluorine when excited by charge transfer from He+2 in a traveling‐wave discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Photosensitivity effect in optical fibers: A model for the growth of an interference filter

J. Bures, J. Lapierre, and D. Pascale

Appl. Phys. Lett. 37, 860 (1980); http://dx.doi.org/10.1063/1.91864 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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See Also: Erratum

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A photosensitive property of short‐length single‐mode optical fibers has been shown to produce a periodical modification of the refractive index of the core when exposed to high‐intensity laser light. Using a model derived from the coupled‐mode theory, we calculate the space‐time variation of the interaction between two waves traveling in opposing directions that are responsible for the formation of an interference filter along the axis of the fiber. Our proposed model for the formation and growth of the filter is in good agreement with experiments; a characteristic photosensitivity coefficient is deduced.
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42.81.-i Fiber optics
42.79.Ci Filters, zone plates, and polarizers
42.79.Hp Optical processors, correlators, and modulators

Blue laser action by the rare‐gas halide trimer Kr2F

F. K. Tittel, M. Smayling, W. L. Wilson, and G. Marowsky

Appl. Phys. Lett. 37, 862 (1980); http://dx.doi.org/10.1063/1.91865 (3 pages) | Cited 18 times

Online Publication Date: 23 July 2008

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Blue Kr2F excimer laser emission centered at 430 nm has been achieved in electron‐beam‐pumped high‐density Ar/Kr/Nf3 mixtures. An output power of about 5 kW has been obtained. The spectral bandwidth is 25 nm for a simple two‐mirror resonator with a potential tuning range between 380 and 480 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Nonlinear optical properties of N, N′ dimethylurea

J.M. Halbout, A. Sarhangi, and C.L. Tang

Appl. Phys. Lett. 37, 864 (1980); http://dx.doi.org/10.1063/1.91866 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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The performance of a nonlinear organic material, N, N′ dimethylurea, is evaluated through second‐harmonic generation in powder. It is shown to be most effective in the region 227–240 nm. The UV absorption of this compound is also reported. The observation of second harmonic generation in this material rules out one of the two crystal structures reported in the literature.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Twin‐stripe injection laser with leaky‐mode coupling

D.E. Ackley and R.W.H. Engelmann

Appl. Phys. Lett. 37, 866 (1980); http://dx.doi.org/10.1063/1.91779 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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A new twin‐stripe leaky‐mode (TLM) injection laser has been demonstrated. The structure consists of two nominally 2‐μm‐wide stripes on 24‐μm centers in a buried‐heterostructure configuration (produced by mesa‐etching a three‐layer double heterostructure and burying with an AlGaAs layer). By adjusting the mole fraction of Al in the burying layer, a negative‐index step is produced at the lateral stripe boundary. Thus a substantial fraction of laser power leaks into the low‐loss waveguide region between the stripes, and strong stripe coupling is observed. The far field consists of two collimated (divergence ∼1°) beams characteristic of leaky‐mode operation that are stable to pulsed drive current as high as 6Ith. Linear output characteristics are observed to powers greater than 150 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Fiber‐optic gyroscope with [3×3] directional coupler

Sang K. Sheem

Appl. Phys. Lett. 37, 869 (1980); http://dx.doi.org/10.1063/1.91867 (3 pages) | Cited 24 times

Online Publication Date: 23 July 2008

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It is proposed and experimentally demonstrated that a fiber‐optic gyroscope using a [3×3] evanescent field‐directional coupler as a beam splitter operates automatically at quadrature without the 1/2 π phase bias required by conventional gyroscopes with [2×2] beam splitters.
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42.62.-b Laser applications
42.81.-i Fiber optics
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Gn Optical waveguides and couplers

Improved excitation by triple discharge in a wire‐triggered transverse electric atmospheric CO2 laser

I. W. Lee and S. S. Lee

Appl. Phys. Lett. 37, 871 (1980); http://dx.doi.org/10.1063/1.91868 (3 pages)

Online Publication Date: 23 July 2008

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The output performance of the wire‐preionized transverse electric atmospheric CO2 laser is greatly enhanced when increased preionization is accomplished through a triple‐discharge technique. Stable TEM00 mode oscillation of the laser is observed in the CO2:N2:He 1:1:1 mixture with input energy density of 240 J/l. The role of the second preionization becomes more significant for the higher charging voltages and for the gas mixtures containing less helium.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Multiline (480–496 nm) discharge‐pumped iodine monofluoride laser

M. L. Dlabal, S. B. Hutchinson, J. G. Eden, and J. T. Verdeyen

Appl. Phys. Lett. 37, 873 (1980); http://dx.doi.org/10.1063/1.91780 (4 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Lasing at 478.7, 484.7, 490.7, and 496.5 nm has been observed on the E→A3Π (bound→bound) band of the IF (iodine monofluoride) molecule in discharge‐pumped He, Ar, CF3I, and NF3 gas mixtures. Oscillation was obtained using a stable optical cavity with output coupling mirror transmissions of 0.2 and 92%. For a 99.7%‐He, 0.2%‐NF3, and 0.1%‐CF3I (ptotal≈1540 Torr) gas mixture and T∼92% (quartz flat), output pulse energies of ∼0.35 mJ in a ∼15‐ns FWHM pulse (peak output power ≳24 kW) were measured. Optimization of the cavity output coupling and increased Ar pressures in conjunction with the use of an attaching gas (to raise the discharge E/N) are expected to improve the output energy and, consequently, the overall efficiency of this blue‐green laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

Above‐threshold analysis of double‐heterostructure diode lasers with laterally tapered active regions

W. Streifer, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 37, 877 (1980); http://dx.doi.org/10.1063/1.91781 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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An above‐threshold analysis of double‐heterostructure lasers with laterally tapered active regions is presented. Results for lowest‐order mode threshold, differential quantum efficiency, and higher‐order transverse‐mode threshold are shown to compare well with experimental observations. A design is presented for a 40‐mA‐threshold laser (275 μm in length) predicted to operate kink free, single transverse mode at ≈50% differential quantum efficiency up to ≈40 mW.
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42.55.Px Semiconductor lasers; laser diodes

Optical bistability using a directional coupler and a detector monolithically integrated in GaAs

A. Carenco and L. Menigaux

Appl. Phys. Lett. 37, 880 (1980); http://dx.doi.org/10.1063/1.91782 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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An electro‐optic directional coupler has been integrated on the same GaAs chip with a proton‐implanted detector located in one of the output rib waveguide channels. The association of this monolithic device with an external electrical amplifier has allowed optical bistable operation to be demonstrated at 1.06 μm. With an amplifier gain equal to unity, the bistable device switches in about 1 μs, the optical switching energy being less than 1 nJ.
Show PACS
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Efficient operation of Blumlein‐discharge‐excited XeCl laser

Chen Jianwen, Fu Shufen, and Liu Miaohong

Appl. Phys. Lett. 37, 883 (1980); http://dx.doi.org/10.1063/1.91783 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Experimental results of a Blumlein‐discharge‐excited XeCl laser are reported in this letter. The maximum output pulse energy was over 400 mJ. The overall efficiency and specific output energy were 1.7% and 5 Jl, respectively. Experiments have shown that the lasing spectrum of XeCl varied with the total pressure. With a total pressure of 500 Torr, 108 discrete laser lines including two new vibrational bands, (0,4) and (1.7), were obtained. The effects of the partial pressure of Xe, the Blumlein charging voltage, and the total pressure on the output energy were also investigated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

Hypersonic‐helium‐flow‐field measurements with the resonant Doppler velocimeter

M. Zimmermann and R. B. Miles

Appl. Phys. Lett. 37, 885 (1980); http://dx.doi.org/10.1063/1.91784 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

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A low density of sodium atoms seeded into a hypersonic helium flow is used to quantitatively determine flow‐field properties. By observing fluorescence from a point as a single‐mode dye laser is tuned through the sodium D2 line, the absorption profile may be found. This profile is fitted to a properly weighted sum of Voigt functions to yield the velocity, temperature, and pressure at the observation point. The fluorescence is strong enough to use this technique for qualitative flow‐field visualization.
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47.80.-v Instrumentation and measurement methods in fluid dynamics

Optical impedance spectroscopy

C. Stanciulescu, R. C. Bobulescu, A. Surmeian, D. Popescu, Iovitzu Popescu, and C.B. Collins

Appl. Phys. Lett. 37, 888 (1980); http://dx.doi.org/10.1063/1.91785 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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A generalized technique of impedance spectroscopy is implemented through the detection of perturbations measured at radio frequencies in the electromagnetic impedance of a medium. The perturbations are caused by the absorption of optical photons. At low powers this offers a complementary method to existing schemes in optical spectroscopy that can be used with high sensitivity. In the limit of high powers it becomes equivalent to optogalvanic spectroscopy with several important advantages.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
33.80.Gj Diffuse spectra; predissociation, photodissociation
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
85.60.-q Optoelectronic devices

Tuning fork resonator using modified PbTiO3 ceramics

Hiroshi Takeuchi and Shigeru Jyomura

Appl. Phys. Lett. 37, 891 (1980); http://dx.doi.org/10.1063/1.91848 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

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Tuning fork resonators with very low temperature coefficients of resonance frequency were fabricated using modified PbTiO3 ceramics. The chemical formula of these ceramics is (Pb1−(3/2)x+(1/2)z Ndx) (Ti1−y−z) Mny Inz) 03. The temperature coefficient can be reduced to −2×10−6/°C at room temperature and zero at 0 °C with the composition x=0.11, y=0.02, and z=0.09. The resonance frequency of the resonators is about 30 kHz and the quality factor is 1100 at the composition. These resonators have potential for low‐frequency applications such as oscillators for watches.
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62.65.+k Acoustical properties of solids
77.65.-j Piezoelectricity and electromechanical effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Stiffness‐controlled variable‐acoustic‐delay line

M. Pappalardo

Appl. Phys. Lett. 37, 893 (1980); http://dx.doi.org/10.1063/1.91849 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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See Also: Erratum

Show Abstract
This letter describes a simple variable‐delay line which makes use of the well‐known phenomenon of stiffening of a solid caused by piezoelectricity. In a piezoelectric ceramic bar we emit a Lamb wave which generates an electric field perpendicular to the direction of the wave. Short‐circuiting the electric field by joining together certain metal strips placed on one of the two free surfaces of the bar, we obtain a reduction of the velocity dependent on the piezoelectric coupling factor. The delay variation obtained in this way is only 0.013 μsec/mm. However, it can be controlled digitally in quite a simple way by means of an analogical multiplexer. A line of about 70 mm permits a variation of about 1 μsec, which should make it possible to use the device in the field of acoustic visualization for medical diagnostics.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound

Thermoacoustic detection of electron paramagnetic resonance

R.L. Melcher

Appl. Phys. Lett. 37, 895 (1980); http://dx.doi.org/10.1063/1.91850 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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The detection of electron paramagnetic resonance absorption has been achieved using techniques similar to those used in the photoacoustic spectroscopy of solids. Magnetic field and amplitude modulation have been used in both resonant and nonresonant microwave spectrometers.
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76.30.-v Electron paramagnetic resonance and relaxation
76.30.Rn Free radicals
78.20.-e Optical properties of bulk materials and thin films
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Theoretical analysis of observed second bulk compressional wave in a fluid‐saturated porous solid at ultrasonic frequencies

N. C. Dutta

Appl. Phys. Lett. 37, 898 (1980); http://dx.doi.org/10.1063/1.91851 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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We show that the second bulk compressional wave observed recently in an experiment by Plona is consistent with the ’’slow’’ compressional wave as predicted by Biot’s theory. We present dispersion and attenuation curves for all of the body waves for Plona’s samples computed as a function of frequency and Biot’s structure factor S. At high frequencies the velocity of the slow compressional wave is approximately equal to Vf/ S1/2, where Vf is the normal compressional‐wave velocity in the pore fluid. Thus, from the measured velocities of slow compressional waves one can obtain S. For Plona’s three samples, the predicted structure factors are 2.1, 2.2, and 3.3.
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62.30.+d Mechanical and elastic waves; vibrations

Energy distribution in relativistic electron beams from field‐emission diodes

R. E. Shefer and G. Bekefi

Appl. Phys. Lett. 37, 901 (1980); http://dx.doi.org/10.1063/1.91852 (3 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Foil and foil‐less field emission diodes (current ∼10 kA, voltage ∼1.5 MV) used in free‐electron Raman lasers are studied experimentally with the view of reducing the perpendicular energy of the emitted beam. Microwave emission, attributed to a cyclotron instability in the beam, is used as the diagnostic. Removal of the outer portions of the beam leads to a significant reduction in the radiated intensity, indicating an overall improvement in beam quality.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Beam nonuniformity effects on laser ablatively accelerated targets

S. P. Obenschain, R. H. Lehmberg, and B. H. Ripin

Appl. Phys. Lett. 37, 903 (1980); http://dx.doi.org/10.1063/1.91853 (4 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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We present results of a laser Doppler‐shift technique which gives the velocity profiles of ablatively accelerated targets. Measurements of the effects of laser beam nonuniformity on the target acceleration are presented and interpreted in the context of laser pellet fusion.
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42.62.-b Laser applications
28.52.-s Fusion reactors
79.20.Ds Laser-beam impact phenomena

Heavy‐ion beams produced by high‐voltage pulse‐powered plasma focus

M. J. Rhee

Appl. Phys. Lett. 37, 906 (1980); http://dx.doi.org/10.1063/1.91854 (3 pages) | Cited 14 times

Online Publication Date: 23 July 2008

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We report preliminary experimental studies of heavy‐ion beams produced by a new type of plasma focus device which is powered by a fast high‐voltage pulse of ∼500 kV, ∼20 kA, and ∼50 ns. A variety of ion species, either from solid materials or gases, were obtained and their beam characteristics, including charge states, energy spectrum, and emittance, were measured.
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52.75.Di Ion and plasma propulsion
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Epitaxial growth of Si deposited on (100) Si

L. S. Hung, S. S. Lau, M. von Allmen, J. W. Mayer, B. M. Ullrich, J. E. Baker, P. Williams, and W. F. Tseng

Appl. Phys. Lett. 37, 909 (1980); http://dx.doi.org/10.1063/1.91855 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer‐by‐layer growth occurred at rates comparable to those in self‐ion‐implanted‐amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (∼50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary‐ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (∼2 Å/sec) deposition, epitaxial growth rates are significantly slower.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface

P. Baeri, J. M. Poate, S. U. Campisano, G. Foti, E. Rimini, and A. G. Cullis

Appl. Phys. Lett. 37, 912 (1980); http://dx.doi.org/10.1063/1.91856 (3 pages) | Cited 40 times

Online Publication Date: 23 July 2008

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The segregation phenomena of In‐implanted Si have been observed following the melting and epitaxial regrowth of surface layers by pulsed ruby laser irradiation. The velocity of the liquid‐solid interface on recrystallization has been varied from 1.8 to 5.2 m/s in two independent ways. Indium is observed to be trapped on substitutional sites, in excess of solid solubilities, or segregated in a thin surface layer. Trapping increases and segregation decreases as the interfacial velocity is raised. The complete depth profiles can be fitted with unique interfacial segregation coefficients which are velocity dependent. The material that has been segregated to the surface shows cell structure of approximately 100 Å diameter arising from lateral segregation due to constitutional supercooling. The cells are not present at velocities of 5 m/s. The critical dependence of In trapping and segregation on velocity in the range 2–5 m/s is interpreted in terms of interfacial residence times.
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64.75.-g Phase equilibria
61.72.U- Doping and impurity implantation

An improved anodic oxide insulator for InP metal‐insulated‐semiconductor field‐effect transistors

D. H. Laughlin and C. W. Wilmsen

Appl. Phys. Lett. 37, 915 (1980); http://dx.doi.org/10.1063/1.91857 (2 pages) | Cited 12 times

Online Publication Date: 23 July 2008

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Highly insulation oxide layers have been anodically grown on InP. The oxide was grown in an electrolyte of pH<2.5 which causes In203 to dissolve out of the growing oxide layer, resulting in a P2O5/In2O3 ratio larger than one. The increase in oxide resistivity is attributed to the high concentration of P2O5 in the layers, since the P2O5 has a large band gap.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Ey III-V and II-VI semiconductors

Atomic‐interlayer‐controlled diffusion at semiconductor‐semiconductor interfaces

G. Margaritondo, N. G. Stoffel, A. D. Katnani, and L. J. Brillson

Appl. Phys. Lett. 37, 917 (1980); http://dx.doi.org/10.1063/1.91858 (2 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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We present experimental evidence that the extent of microscopic interdiffusion processes at GaAs‐Ge interfaces is strongly affected by ultrathin layers of a reactive metal deposited between the two semiconductors. This modulation can be explained by a recently proposed model in which the activation energies for out‐diffusion of the substrate atoms are modified by the dipole field at the metal‐semiconductor interface.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
66.30.J- Diffusion of impurities
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