APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Nov 1980

Volume 37, Issue 10, pp. 855-967

Page 2 of 2 Pages Previous Page | Jump to Page

Recrystallization of silicon‐on‐sapphire by cw Ar laser irradiation: Comparison between the solid‐ and the liquid‐phase regimes

I. Golecki, G. Kinoshita, A. Gat, and B. M. Paine

Appl. Phys. Lett. 37, 919 (1980); http://dx.doi.org/10.1063/1.91859 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The annealing behavior under cw Ar laser irradiation (LI) has been studied for 0.2–0.5‐μm‐thick silicon‐on‐sapphire (SOS) epitaxial films. Analysis by MeV He+ channeling shows that after LI in the solid phase, Si‐implanted films, which had a buried amorphous layer beneth ≈30 Å of surface crystal, become crystalline, but are more defective than the original chemically vapor‐deposited (CVD) films. By contrast, furnace annealing of similar layers significantly reduces the defect concentrations below the surface crystal, compared to the defect level in CVD SOS. LI of CVD or Si‐implanted SOS in the liquid phase reduces the defect concentration throughout the film thickness, but the regrown films are laterally nonuniform and have a high Al content.
Show PACS
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Fq Growth from melts; zone melting and refining

Ion‐beam‐induced modification of silicide formation in rare‐earth metals: Er‐Si and Tb‐Si systems

B. Y. Tsaur and L. S. Hung

Appl. Phys. Lett. 37, 922 (1980); http://dx.doi.org/10.1063/1.91860 (3 pages) | Cited 31 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Interfacial reactions between thin rare‐earth metal (Er and Tb) films and crystal Si substrates can be drastically modified by ion implantation. With a low‐dose (∼1014 cm−2) Xe ion bombardment through the Er (Tb) film, a well‐defined silicide phase grown in a layer‐by‐layer fasion is observed after postimplantation annealing at ∼300 °C. The rate of growth is parabolic in time with activation energies of 1.71 and 1.25 eV for the Er and Tb silicides, respectively. These results are distinctly different from those observed in unimplanted samples where silicide formation requires somewhat higher temperatures (∼350 °C) and exhibits no evidences of layer‐by‐layer growth. The effect of ion bombardment on the metal‐Si interface and its influences on compound formation are discussed.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
61.72.U- Doping and impurity implantation

Raman scattering study of the thermal oxidation of InP

G. P. Schwartz, W. A. Sunder, and J. E. Griffiths

Appl. Phys. Lett. 37, 925 (1980); http://dx.doi.org/10.1063/1.91861 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Reflection Raman scattering has been used to study thermally grown air‐oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.
Show PACS
81.65.-b Surface treatments
78.30.Hv Other nonmetallic inorganics

Temperature dependence of metal‐nitride‐oxide‐silicon currents at constant oxide fields

A. Fedotowsky, K. Lehovec, and Y.K. Park

Appl. Phys. Lett. 37, 928 (1980); http://dx.doi.org/10.1063/1.91763 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
The steady‐state current through the double dielectric of metal‐nitride‐oxide‐silicon capacitors on p‐silicon substrate was measured as a function of temperature for several fixed fields in the silicon oxide of a polarity‐promoting hole flow from the silicon. It is shown that the availability of empty recipient trap states for holes tunneling from the silicon into the nitride controls the current. The occupancy of these trap states is governed by Frenkel‐Poole detrapping at elevated temperatures and by Fowler‐Nordheim tunnel emission from the traps at low temperature. Transient charging measurements support this interpretation.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Ion backscattering and channeling study of InAs‐GaSb superlattices

F. W. Saris, W. K. Chu, C. A. Chang, R. Ludeke, and L. Esaki

Appl. Phys. Lett. 37, 931 (1980); http://dx.doi.org/10.1063/1.91764 (3 pages) | Cited 26 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
We show that the Rutherford backscattering yield from [100] InAs‐GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs‐GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga–As or In–Sb bonds, which differ by 7% in binding distance from InAs‐GaSb.
Show PACS
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
29.30.Ep Charged-particle spectroscopy

Ionic conductivity of single‐crystal Na5YSi4O12

H. U. Beyeler, R. D. Shannon, and H. Y. Chen

Appl. Phys. Lett. 37, 934 (1980); http://dx.doi.org/10.1063/1.91765 (2 pages) | Cited 5 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
We have investigated the single‐crystal ionic conductivity of Na5YSi4O12. The conductivity is found to exhibit a thermally activated temperature dependence between 200 and 500 K with activation energies of 0.221 and 0.203 eV parallel and perpendicular to the hexagonal c axis. Room‐temperature conductivities were determined to be 0.0032 and 0.008 (Ω cm)−1.
Show PACS
66.30.H- Self-diffusion and ionic conduction in nonmetals
82.47.-a Applied electrochemistry
61.66.Bi Elemental solids

Polycrystalline‐silicon thin‐film transistors on glass

M. Matsui, Y. Shiraki, Y. Katayama, K. L. I. Kobayashi, A. Shintani, and E. Maruyama

Appl. Phys. Lett. 37, 936 (1980); http://dx.doi.org/10.1063/1.91766 (2 pages) | Cited 16 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Thin‐film transistors are fabricated on polycrystalline silicon on transparent glass using molecular beam deposition at low temperatures. It is found that the transistor characteristics and stability of this device, together with the low‐temperature processes utilized, afford potential application to flat display panels.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Phase formation in Cr‐Si thin‐film interactions

E. G. Colgan, B. Y. Tsaur, and J. W. Mayer

Appl. Phys. Lett. 37, 938 (1980); http://dx.doi.org/10.1063/1.91767 (3 pages) | Cited 20 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Silicide formation has been studied in Cr‐Si thin‐film samples by MeV 4He+ backscattering and glancing‐incidence x‐ray diffraction. Samples of SiO2/Cr/Si configuration were prepared by sequential e‐gun deposition of Cr and Si onto SiO2 substrates with the relative film thicknesses adjusted to Cr:Si ratios of 3.0 (Cr3Si), 1.67 (Cr5Si3), and 1.0 (CrSi). In the early stage of phase formation when both unreacted Cr and Si are present, the CrSi2 phase is formed. The phase grows until the Si is completely consumed, and then a metal‐rich phase, Cr5Si3, is formed at the Cr‐CrSi2 interface. Upon further heating of samples with a Cr:Si ratio of 3.0, Cr5Si3 reacts with Cr to form a more Cr‐rich phase, Cr3Si. The CrSi phase was observed only in samples with a Cr:Si ratio of 1. All the compounds present in the phase diagram were observed. The end phases are determined by the availability of Cr and Si in the reactions and can be predicted from the phase diagram.
Show PACS
68.55.-a Thin film structure and morphology
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
64.70.-p Specific phase transitions

Symmetry of the Au (110) surface reconstruction studied by spin‐polarized low‐energy electron diffraction

B. Reihl and B. I. Dunlap

Appl. Phys. Lett. 37, 941 (1980); http://dx.doi.org/10.1063/1.91768 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Spin‐polarized low‐energy electron diffraction measurements of the analyzing power of two specular beams and the (0, 1/2 ) beam are presented. A theoretial argument relates the analyzing power S and polarizing power P of these beams for an unreconstructed Au (110) surface. This is used to deduce the symmetry of the reconstructed surface. In particualr, these results are inconsistent with the missing‐ and pairing‐row models, suggesting rotation within the reconstructed unit cell.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Electron beam modulation of GaAs metal‐semiconductor field‐effect transistors

H. H. Wieder, N. M. Davis, and L. D. Flesner

Appl. Phys. Lett. 37, 943 (1980); http://dx.doi.org/10.1063/1.91769 (3 pages) | Cited 2 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Modulation of the surface potential of GaAs Schottky barrier field‐effect transistors by 1–6‐kV electrons with current densities in the range between 10−5 and 10−3 A/cm2 can produce current gains G⩾105 for electron beam currents pulsed at rates ⩽104 Hz.
Show PACS
85.30.Tv Field effect devices

Modification of Schottky barrier height by surface grain boundaries of polycrystalline silicon

C. M. Wu and E. S. Yang

Appl. Phys. Lett. 37, 945 (1980); http://dx.doi.org/10.1063/1.91770 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
It is found that the Schottky barrier height ϕBn depends on the grain‐boundary surface state density DBS and the boundary density dB, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average grain size). Experimental data for Au–polycrystalline‐Si (n type) Schottky diodes indicate that the effective grain‐boundary state density is approximately 3×1011 cm−1 eV−1 and the change of barrier height is consistent with the proposed model.
Show PACS
73.40.Sx Metal-semiconductor-metal structures
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Thermal behavior of laser‐annealed GaAs studied by helium backscattering spectroscopy

J. Amano, P. A. Pianetta, and C. A. Stolte

Appl. Phys. Lett. 37, 948 (1980); http://dx.doi.org/10.1063/1.91771 (3 pages)

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
The thermal behavior of Te‐implanted, laser‐annealed GaAs was investigated by helium backscattering and channeling analysis in order to determine the role of structural changes on the two‐stage reduction in carrier concentration observed with post‐laser‐anneal heating above 250 °C. Post‐laser‐anneal heating up to 450 °C caused no observable structural changes in the GaAs or in the substitutionality of the implanted Te. On the other hand, 850 °C post‐laser‐anneal heating induced the formation of extended defects in the GaAs, and the channeling half‐angle of Te was narrowed by about 11%. From those observations, possible models to explain the reduction in carrier concentration are postulated.
Show PACS
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities

High‐frequency noise in weakly inverted metal‐oxide‐semiconductor transistors

S. T. Liu and A. van der Ziel

Appl. Phys. Lett. 37, 950 (1980); http://dx.doi.org/10.1063/1.91772 (2 pages) | Cited 1 time

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
The high‐frequency noise in weakly inverted metal‐oxide‐semiconductor field‐effect transistors is identified experimentally as the thermal noise associated with the diffusion current flowing from source to drain. In terms of the saturated diode current, the equivalent noise current Ieq is shown to be proportional to the drain current. In some cases the proportionality constant to unity and the thermal noise behavior resembles shot noise behavior.
Show PACS
72.70.+m Noise processes and phenomena
85.30.Tv Field effect devices

Effects of geminate recombination on the photovoltaic characteristics of a‐Si:H Schottky barrier solar cells

I. Chen and J. Mort

Appl. Phys. Lett. 37, 952 (1980); http://dx.doi.org/10.1063/1.91773 (4 pages) | Cited 10 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
The photovoltaic characteristics of an a‐Si:H Schottky barrier cell have been analyzed theoretically taking into account geminate recombination and the localized state distribution. A comparison of the results with the experimental data in the literature leads to fundamentally different conclusions regarding the limitations of this type of photovoltaic cell. The limitation due to carrier lifetime is unimportant in a cell of typical thickness (∼0.5 μm), while geminate recombination can essentially account for observed recombination losses.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling
84.60.Jt Photoelectric conversion

High‐conductivity heteroepitaxial ZnSe films

Paul Besomi and Bruce W. Wessels

Appl. Phys. Lett. 37, 955 (1980); http://dx.doi.org/10.1063/1.91774 (3 pages) | Cited 12 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
High‐conductivity ZnSe single‐crystalline films have been heteroepitaxially deposited on GaAs substrates using open‐tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 1014–1016 cm−3 and resistivities of 1–103 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The electrical effect of hydrogen on InSb films

A. L. Dawar, O. P. Taneja, and P. C. Mathur

Appl. Phys. Lett. 37, 957 (1980); http://dx.doi.org/10.1063/1.91775 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
Polycrystalline films of n‐InSb were exposed to hydrogen at 300 and 500 psi for 2 h. Large changes were observed in the Hall coefficient and mobility, denoting a transfer of donor states to the films. This is believed to involve the in‐diffusion of hydrogen, which was found to be irreversible within a period of one month.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
72.20.Fr Low-field transport and mobility; piezoresistance

Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system

G. S. Mitchard and T. C. McGill

Appl. Phys. Lett. 37, 959 (1980); http://dx.doi.org/10.1063/1.91776 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
We report on a systematic study of the use of photoluminescence for the determination of relative impurity concentrations. The system chosen for the study was Si with a shallow level, B, in the presence of a deeper level, In. The results show that, at sufficiently low concentrations, the photoluminescence intensities can be used to determine the relative impurity concentrations. At higher In concentrations (NIn ≳1015 cm−3) we find that exciton transfer from B to In results in a quenching of the B photoluminescence intensity. For NIn ≳2×1016 cm−3, B photoluminescence was not observed in any sample studied.
Show PACS
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors

Crystallization of amorphous Pr0.27 Co0.73: Magnetic properties and laser‐induced coercivity

J. J. Croat, A. R. Chraplyvy, and J. F. Herbst

Appl. Phys. Lett. 37, 962 (1980); http://dx.doi.org/10.1063/1.91777 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF

Show Abstract
We report magnetic measurements of a Pr0.27 Co0.73 alloy during crystallization from the amorphous state. A maximum room‐temperature coercivity of 6.8 kOe developed after an anneal at ∼415 °C. The magnetization of the amorphous material exceeds the crystalline value by a factor of approximately 3. We also demonstrate that small sample regions can be selectively annealed using focused laser radiation, thereby producing magnetically hard regions in a soft magnetic host.
Show PACS
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Temperature dependence of electrochromic processes in iridium oxide displays

S. Hackwood, G. Beni, W. C. Dautremont‐Smith, L. M Schiavone, and J. L. Shay

Appl. Phys. Lett. 37, 965 (1980); http://dx.doi.org/10.1063/1.91778 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
We report measurements of the temperature dependence of coloration and bleaching times of electrochromic iridium oxide films in the range +20 to −43 °C. The intrinsic response times increase gradually with decreasing temperature according to an activation energy of ∼0.25 eV. For a contrast ratio of ∼4:1, suitable for a practical device, we find that the response times remain below ∼0.25 sec for T⩾−10 °C and below 1 sec for T⩾−25 °C. We have also found that the temperature variation of the response times is independent of pH, so that an optimized electrolyte can be chosen for a practical device. Moreover, its independence of pH suggests that the electrochromism of iridium oxide is due to insertion and fast‐ion diffusion of the same ion species in either basic or acidic aqueous electrolytes.
Show PACS
82.45.-h Electrochemistry and electrophoresis
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close