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15 Dec 1980

Volume 37, Issue 12, pp. 1057-1109


Efficient HgBr (B→X) laser oscillation in electron‐beam‐controlled‐discharge‐excited Xe/HgBr2 mixtures

Robert T. Brown and William L. Nighan

Appl. Phys. Lett. 37, 1057 (1980); http://dx.doi.org/10.1063/1.91875 (2 pages) | Cited 26 times

Online Publication Date: 23 July 2008

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This letter reports the results of an investigation of HgBr(B2J+→X2J+) laser oscillation at 502 nm in Xe‐HgBr2 mixtures excited using an electron‐beam‐controlled discharge. Measured values of instantaneous electrical‐optical energy conversion efficiency were 2%, a level substantially higher than that typical of N2‐HgBr2 mixtures. Calculations show that efficiencies of 5–10% may be possible under optimized conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges
41.75.Fr Electron and positron beams

Backward wave oscillation in the gyrotron

J. M. Wachtel and E. J. Wachtel

Appl. Phys. Lett. 37, 1059 (1980); http://dx.doi.org/10.1063/1.91876 (3 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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The electron cyclotron maser instability is shown to support backward wave oscillation in a traveling‐wave gyrotron. Numerical values for two parameters that identify oscillation thresholds are determined.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)

Acoustic wave properties and device characterization of 55°‐rotated y‐cut quartz

F. Josse and J. F. Vetelino

Appl. Phys. Lett. 37, 1062 (1980); http://dx.doi.org/10.1063/1.91877 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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The properties of the acoustic wave propagation on or near the surface on the 55°‐rotated y‐cut in quartz are experimentally studied to determine the suitability of this cut in device applications. The wave is shown to be a combination of a surface‐skimming bulk wave (SSBW) and a Bleustein‐Guylaev wave. The velocity, temperature coefficient of delay, and attenuation associated with the wave have been measured. The measured attenuation was found to be significantly lower than previously investigated pure SSBW orientations. Using this wave, various bandpass filters were designed, fabricated, and tested. An aluminum layer deposited between the input and output electrodes was found to lower the insertion loss. The results are described and compared to the more commonly used SSBW orientations in quartz.
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43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.40.Dx Vibrations of membranes and plates

Equivalence between fourth sound in liquid He II at low temperatures and the Biot slow wave in consolidated porous media

David Linton Johnson

Appl. Phys. Lett. 37, 1065 (1980); http://dx.doi.org/10.1063/1.91878 (3 pages) | Cited 38 times

Online Publication Date: 23 July 2008

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See Also: Erratum

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The theory of acoustic propagation in porous fluid‐filled media developed by Biot is applied to the case where superfluid 4He is in the pores (T<1.1 K where there is a negligible amount of normal fluid). For a consolidated (fused) matrix Biot’s slow compressional wave is shown to be identical to the phenomenon known as fourth sound; V(slow wave/fourth sound)=V(fluid)/n. The index of refraction of fourth sound is related to the ’’structure factor’’α, of the Biot theory by n=α1/2, and so use of the superfluid provides a direct means of measuring α in a given sample. Predictions for the velocities of the fast wave, the shear wave, and the slow wave/fourth sound are made for fused gass bead samples in which Plona has previously reported seeing these three waves under the condition of water saturation.
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62.30.+d Mechanical and elastic waves; vibrations
67.25.dg Transport, hydrodynamics, and superflow
67.25.dt Sound and excitations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound

Measurements of stimulated Raman scattering from magnetically confined underdense plasmas

R. G. Watt and Z. A. Pietrzyk

Appl. Phys. Lett. 37, 1068 (1980); http://dx.doi.org/10.1063/1.91879 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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Experimental measurements of stimulated Raman scattering of intense CO2 laser radiation from magnetically confined, underdense hydrogen plasmas are reported. The backscatter has a nonlinear intensity dependence as predicted by theory. The spectral structure is seen to consist of several apparent resonances as opposed to the single resonance of the simple theory. A possible explanation of this fine structure in terms of the physical effect of a density gradient is discussed.
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52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)

Far‐infrared laser frequency modulation by refraction index variation in low‐density plasma

A. De Marchi, A. Godone, and E. Bava

Appl. Phys. Lett. 37, 1070 (1980); http://dx.doi.org/10.1063/1.91880 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Experimental results are reported of frequency modulation of an optically pumped far‐infrared laser obtained by varying the electron density in an ionized gas plasma confined in a dielectric waveguide external to the laser cavity and electromagnetically coupled to its oscillating mode. A modulation depth of 6 kHz at 403.7 GHz (HCOOH laser line) is reported. This was obtained with a weakly ionized plasma (≈1010 e/cm3) at a gas pressure of 0.1 Torr in a 0.3‐m‐long cell, with a relative electron density variation of 90%. The modulation bandwidth was determined by plasma recombination time and turned out to be 20 kHz at this pressure in nitrogen.
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42.79.Hp Optical processors, correlators, and modulators

Threshold and switching characteristics of a bistable nematic liquid‐crystal storage display

Julian Cheng and G. D. Boyd

Appl. Phys. Lett. 37, 1072 (1980); http://dx.doi.org/10.1063/1.91881 (3 pages) | Cited 10 times

Online Publication Date: 23 July 2008

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The electrical switching characteristics of a bistable liquid‐crystal storage display is described, including the response times, switching mechanism, and a field dependence that exhibits several threshold effects. The origins and properties of these thresholds are discussed in relation to their utility in matrix‐addressing applications.
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61.30.-v Liquid crystals
85.60.Pg Display systems
61.30.Jf Defects in liquid crystals
78.20.Jq Electro-optical effects

Whisker Growth induced by Ag photodoping in glassy GexSe1−x films

C. H. Chen and K. L. Tai

Appl. Phys. Lett. 37, 1075 (1980); http://dx.doi.org/10.1063/1.91882 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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The growth and disappearance of crystalline Se whiskers in glassy GexSe1−x films ( with x=0.1 and (1)/(3) ) during the process of Ag photodoping have been studied by electron microscopy. The longitudinal growth direction of the whiskers is found to be parallel to the c axis of the Se hexagonal lattice.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.05.Kf Glasses (including metallic glasses)
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

Luminescence in slipped and dislocation‐free laser‐annealed silicon

R. H. Uebbing, P. Wagner, H. Baumgart, and H. J. Queisser

Appl. Phys. Lett. 37, 1078 (1980); http://dx.doi.org/10.1063/1.91869 (2 pages) | Cited 19 times

Online Publication Date: 23 July 2008

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Photoluminescence of cw laser‐annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation‐related defect levels.
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79.20.Ds Laser-beam impact phenomena
78.40.Fy Semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

High‐electric‐field‐generated electron traps in oxide grown from polycrystalline silicon

Han‐Sheng Lee and Chin‐Hu Feng

Appl. Phys. Lett. 37, 1080 (1980); http://dx.doi.org/10.1063/1.91870 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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A thin oxide film thermally grown from polycrystalline silicon was studied under pulsed high electric fields. Since the oxide was grown on a bumpy surface, both oxide surfaces are not smooth. The field enhancement caused by the bumpy surfaces produces high local electric fields. Electron traps are found in the oxide, and the generation of these traps is experimentally correlated to these local high fields. Measured results show that under constant applied voltage, the higher the local electric fields in the oxide, the faster the decay in the measured oxide current.
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72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators
73.40.Ty Semiconductor-insulator-semiconductor structures

Facet degradation of InGaAsP/InP double‐heterostructure lasers

M. Morimoto, H. Imai, K. Hori, M. Takusagawa, and M. Fukuda

Appl. Phys. Lett. 37, 1082 (1980); http://dx.doi.org/10.1063/1.91871 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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The facet degradation of InGaAsP/InP double‐heterostructure (DH) lasers was studied in water. It was found that the facet degradation of InGaAsP/InP DH lasers is caused by facet oxidation and that the oxidation rate is some orders of magnitude lower than that of GaAlAs DH lasers. Facet degradation is accelerated by the water temperature, while no optical power dependence was exhibited below 6.7 mW/μm2 in this study.
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42.55.Px Semiconductor lasers; laser diodes
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.55.-a Thin film structure and morphology

Low‐temperature crystallization of doped a‐Si:H alloys

T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka

Appl. Phys. Lett. 37, 1084 (1980); http://dx.doi.org/10.1063/1.91872 (3 pages) | Cited 49 times

Online Publication Date: 23 July 2008

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Crystallization of phosphorus‐doped a‐Si:H has been initiated at a substrate temperature below 200 °C, under the deposition conditions of a low flow rate of silane and in the presence of an external magnetic field. Along with the crystallization, the doping efficiency of the resulting Si:H films has been remarkably improved. Room‐temperature conductivity as high as 27 Ω−1 cm−1 has been achieved at a doping ratio of NPH3/NSiH4=5.6×10−3 for a specimen deposited at 30 C. Optical emission spectroscopy during the plasma deposition has revealed that a weak emission intensity of the SiH band with respect to hydrogen lines and the absence of emission from the doubly excited states of hydrogen molecules are necessary conditions for the crystallization of doped Si:H films.
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68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
72.80.-r Conductivity of specific materials
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electrostatic effects in inversion‐layer metal‐insulator‐semiconductor solar cells

Y. W. Lam, M. A. Green, and L. W. Davies

Appl. Phys. Lett. 37, 1087 (1980); http://dx.doi.org/10.1063/1.91873 (3 pages) | Cited 6 times

Online Publication Date: 23 July 2008

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Several newer solar cell structures rely on charges in antireflection coatings to induce a charge layer along the surface of the semiconductor region of the cell. The present letter describes experimental results for time‐dependent electrostatic effects in such devices, with particular reference to inversion‐layer metal‐insulator‐semiconductor solar cells. It is shown experimentally that, over a period of several weeks, a charge layer builds up on the outside of the antireflection coating, which reduces its effectiveness as a charge inducer. Although devices can be designed to accomodate this effect, a preferable approach is to prevent this layer from building up.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.-c Electronic transport in interface structures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Themoelectric power and conductivity of As‐doped a‐Si:H:F

Paul Nielsen and V. L. Dalal

Appl. Phys. Lett. 37, 1090 (1980); http://dx.doi.org/10.1063/1.91874 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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Thermoelectric power and conductivity measurements on As‐doped a‐Si:H:F have been combined with exact computations of conductivity and thermopower to determine the midgap density of states (1016 eV−1 cm−3) and maximum mobility (11 cm2 V−1 sec−1). The mobility edge is found to lie significantly deeper in the gap than in a‐Si:H.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.80.Ng Disordered solids
72.20.Fr Low-field transport and mobility; piezoresistance

Room‐temperature photoluminescence in spray‐pyrolyzed CdS

Bernard J. Feldman and Jack A. Duisman

Appl. Phys. Lett. 37, 1092 (1980); http://dx.doi.org/10.1063/1.91883 (2 pages) | Cited 27 times

Online Publication Date: 23 July 2008

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Very intense room‐temperature photoluminescence has been observed near 1000 nm in CdS films prepared by spray pyrolysis. Since this material can be easily fabricated into p‐n devices, this suggests the possibility of inexpensive electro‐optical devices. Also, the photoluminescence spectra of CdS and amorphous Si:H are very similar.
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78.55.-m Photoluminescence, properties and materials

Iron doping in gallium arsenide by molecular beam epitaxy

D. W. Covington, J. Comas, and P. W. Yu

Appl. Phys. Lett. 37, 1094 (1980); http://dx.doi.org/10.1063/1.91884 (3 pages) | Cited 7 times

Online Publication Date: 23 July 2008

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Iron‐doped GaAs layers have been grown by molecular beam epitaxy (MBE) over a substrate temperature range of 460–540 °C with incident 56Fe levels of 2×108–2×1011 atoms cm−2 sec−1. Photoluminescence studies indicate that iron can be incorporated on Ga sites in MBE GaAs. A pronounced accumulation of Fe at the outer epi‐layer surface is observed in secondary‐ion mass spectroscopy profiles of heavily doped samples. This accumulation leads to appreciable donor compensation in n‐type GaAs subsequently grown.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors

Preparation and coercive force of melt‐spun Pr‐Fe alloys

J. J. Croat

Appl. Phys. Lett. 37, 1096 (1980); http://dx.doi.org/10.1063/1.91885 (3 pages) | Cited 22 times

Online Publication Date: 23 July 2008

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Amorphous Pr1−x‐Fex (0.45⩽x⩽0.90) alloys were prepared over a wide compositional range by melt spinning. Significant room‐temperature intrinsic coercivities were found; a maximum of 2.8 kOe was found at composition x=0.6. At reduced temperature (20 K) coercivities as high as 60 kOe were observed. High‐purity constituents were required to obtain amorphous samples over the composition interval 0.66⩽x⩽0.90.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys

Submicron‐resolution eutectic thin‐film mask

Harvey E. Cline

Appl. Phys. Lett. 37, 1098 (1980); http://dx.doi.org/10.1063/1.91886 (3 pages) | Cited 4 times

Online Publication Date: 23 July 2008

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A process for fabrication of submicron periodic arrays uses a directionally solidified eutectic thin film as a mask in x‐ray lithography. A 2‐μthick Pb‐Sn eutectic film was directionally solidified on a mica substrate to produce a mask with a minimum linewidth of 0.7 μ. The structure was replicated with contact x‐ray lithography. Applications and the ultimate limitation of this process are discussed.
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68.60.-p Physical properties of thin films, nonelectronic

lithium doping of polycrystalline silicon

G. L. Miller and W. A. Orr

Appl. Phys. Lett. 37, 1100 (1980); http://dx.doi.org/10.1063/1.91887 (2 pages) | Cited 5 times

Online Publication Date: 23 July 2008

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Electrolytic lithium doping of high‐purity polycrystalline silicon samples has been shown to increase not only the material conductivity but also the minority‐carrier lifetime.
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81.10.Dn Growth from solutions
61.72.U- Doping and impurity implantation

Detection of extended interstitial chains in ion‐damaged silicon

T. Y. Tan, H. Föll, and W. Krakow

Appl. Phys. Lett. 37, 1102 (1980); http://dx.doi.org/10.1063/1.91888 (3 pages) | Cited 8 times

Online Publication Date: 23 July 2008

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We have carried out a high‐resolution electron microscope lattice imaging study of As+ ion‐damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain‐type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di‐interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Jh Ion radiation effects

Molecular beam epitaxial GaAs heteroface solar cell grown on Ge

D. L. Miller and J. S. Harris

Appl. Phys. Lett. 37, 1104 (1980); http://dx.doi.org/10.1063/1.91889 (3 pages) | Cited 11 times

Online Publication Date: 23 July 2008

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GaAs/AlGaAs heteroface solar cells having AM1 efficiencies up to 17% have been grown by molecular beam epitaxy (MBE) directly on Ge (100) substrates. These cells on Ge have efficiencies identical to cells grown simultaneously on GaAs. The cells reported here are the highest efficiency MBE solar cells reported to date, and are the first high‐efficiency GaAs solar cells grown directly on Ge by MBE.
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84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology

Nb‐Al multifilamentary superconducting composites produced by powder processing

R. Akihama, R. J. Murphy, and S. Foner

Appl. Phys. Lett. 37, 1107 (1980); http://dx.doi.org/10.1063/1.91890 (3 pages) | Cited 13 times

Online Publication Date: 23 July 2008

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Multifilamentary superconducting Nb‐Al composites were produced using powder processing with high overall critical currents Jc at high magnetic fields. A Nb–3 wt. % Al composite, reacted at 800 °C for 16 h, had Jc ≳104 A/cm2 at 14 T at 4.2 K. Jc was almost independent of strain for strains up to 1.3%.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
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