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1 Aug 1980

Volume 37, Issue 3, pp. 255-336

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Optical parametric amplification in Ti‐diffused LiNbO3 waveguides

W. Sohler and H. Suche

Appl. Phys. Lett. 37, 255 (1980); http://dx.doi.org/10.1063/1.91897 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2008

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Phase‐matched optical parametric amplification has been observed for the first time in a guided‐wave structure. In 32‐nm‐long Ti‐diffused LiNbO3 channel waveguides amplification of the 1.15‐μ line of a cw He‐Ne laser and the associated difference‐frequency generation were studied. A gain of up to 75% was achieved for the TE10 (pump)–TM00 (signal, idler) mode combination with a peak pump power of ∼200 W, supplied by a tunable pulsed dye laser. An actual coherence length for the parametric interaction of 25 mm was obtained.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Near‐field and beam‐waist position of the semiconductor laser with a channeled‐substrate planar structure

Chung‐Yih Chen and Shyh Wang

Appl. Phys. Lett. 37, 257 (1980); http://dx.doi.org/10.1063/1.91898 (4 pages) | Cited 5 times

Online Publication Date: 22 July 2008

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We demonstrated astigmatism in the output beam from the double‐current‐confinement channeled‐substrate planar laser. A gradual transition from gain guiding toward index guiding is observed as the thickness of the cladding layer t is reduced. The near field is stable, and both the beam width and the beam‐waist position are independent of the pumping levels over the range of current tested (up to 3 Ith).
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42.62.-b Laser applications
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

All‐optical parallel logic operation using fiber laser plate for digital image processing

Atsuya Seko

Appl. Phys. Lett. 37, 260 (1980); http://dx.doi.org/10.1063/1.91899 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2008

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A fiber laser plate exhibits sharp transition and high contrast. We describe the first demonstration of all‐optical parallel logic operations such as A/D conversion and the AND and OR operations important for digital optical computers using the device as an optical switch array.
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42.30.Va Image forming and processing
42.65.-k Nonlinear optics
42.81.-i Fiber optics
42.60.Fc Modulation, tuning, and mode locking

Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers

J. J. Coleman and P. D. Dapkus

Appl. Phys. Lett. 37, 262 (1980); http://dx.doi.org/10.1063/1.91900 (2 pages) | Cited 15 times

Online Publication Date: 22 July 2008

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Single‐mode self‐aligned GaAlAs‐GaAs double‐heterostructure lasers have been fabricated by metalorganic chemical vapor deposition. These devices operate at low current thresholds on a single longitudinal mode and require only a single photolithographic processing step.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission
78.60.Fi Electroluminescence

High‐efficiency energy extraction in backward‐wave Raman scattering

Ralph R. Jacobs, Julius Goldhar, David Eimerl, Steve B. Brown, and John R. Murray

Appl. Phys. Lett. 37, 264 (1980); http://dx.doi.org/10.1063/1.91901 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2008

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Pump depletions of 70–75% have been demonstrated for a KrF‐laser‐driven, methane‐gas‐filled backward Raman amplifier and are in agreement with predictions of the Frantz‐Nodvik saturated‐amplifier model. The associated counterpropagating Stokes laser intensity is determined to be ≳3.5 times that of the pump; the corresponding pulse compression ratio is ≈5.
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42.60.By Design of specific laser systems

Picosecond pulse generation by passive mode locking of diode lasers

E. P. Ippen, D. J. Eilenberger, and R. W. Dixon

Appl. Phys. Lett. 37, 267 (1980); http://dx.doi.org/10.1063/1.91902 (3 pages) | Cited 53 times

Online Publication Date: 22 July 2008

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We report the generation of pulses as short as 5 psec in duration by passive mode locking of a modified strip buried heterostructure GaAlAs diode in an extended resonator. We also describe the effects of intercavity bandwidth control for the generation of transform‐limited pulses. E/T;8042.80.−f, 42.55.Px
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42.79.-e Optical elements, devices, and systems
42.55.Px Semiconductor lasers; laser diodes

Three‐prism loss measurements of optical waveguides

Y. H. Won, P. C. Jaussaud, and G. H. Chartier

Appl. Phys. Lett. 37, 269 (1980); http://dx.doi.org/10.1063/1.91903 (3 pages) | Cited 26 times

Online Publication Date: 22 July 2008

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A new nondestructive method for measuring losses of an optical waveguide is presented. It uses three prisms, which enables the results to be independent of coupling efficiencies in and out of the guide. It requires only small strains on the guide and may be useful for fragile materials.
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42.79.Gn Optical waveguides and couplers

Acoustic‐zone‐plate variable‐illuminating‐angle system for acoustic microscopes

R. D. Heidenreich

Appl. Phys. Lett. 37, 272 (1980); http://dx.doi.org/10.1063/1.91904 (3 pages) | Cited 1 time

Online Publication Date: 22 July 2008

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The scanning acoustic microscope utilizes a beam of fixed angular illumination with large numerical aperture limiting the amount of information that is obtainable. It is suggested that a multizone transducer–spherical‐lens configuration can yield a more flexible acoustic illumination source. Numerical calculations indicate that it should be possible to vary the half‐angle of the illumination from about 5° to 57°, thus allowing an estimate of the specimen acoustic impedance to be made and critical angles determined experimentally. A fast, programmed microprocessor will be essential for phase‐amplitude control of individual zones and signal detection.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.40.Le Techniques for nondestructive evaluation and monitoring, acoustic emission
43.20.+g General linear acoustics
41.20.Jb Electromagnetic wave propagation; radiowave propagation

A boundary‐layer treatment for turbulent detonation waves

Joseph A. Johnson

Appl. Phys. Lett. 37, 275 (1980); http://dx.doi.org/10.1063/1.91896 (2 pages) | Cited 4 times

Online Publication Date: 22 July 2008

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The profile of turbulent intensity versus Reynolds number from bursts found in an ignition front agrees with the Orr‐Sommerfeld solutions for unstable boundary‐layer flow. This result provides the first evidence of a formal connection between bursting transition to turbulence in flows which share the boundary‐layer approximation but which are otherwise unrelated.
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47.40.-x Compressible flows; shock waves

First results of material charging in the space environment

P. F. Mizera, H. C. Koons, E. R. Schnauss, D. R. Croley, H. K. Alan Kan, M. S. Leung, N. John Stevens, F. Berkopec, J. Staskus, William L. Lehn, and J. E. Nanewicz

Appl. Phys. Lett. 37, 276 (1980); http://dx.doi.org/10.1063/1.91905 (4 pages) | Cited 6 times

Online Publication Date: 22 July 2008

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A satellite experiment, designed to measure potential charging of typical thermal‐control materials at near‐geosynchronous altitude, was flown as part of the SCATHA program. Direct observations of charging of typical satellite materials in a natural charging event (⩾ 5 keV) are presented. The results show some features which differ significantly from previous laboratory simulations of the environment.
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07.87.+v Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.)

cw far‐infrared laser scattering from a laboratory plasma

H. Park, W. A. Peebles, A. Mase, N. C. Luhmann, and A. Semet

Appl. Phys. Lett. 37, 279 (1980); http://dx.doi.org/10.1063/1.91906 (4 pages) | Cited 8 times

Online Publication Date: 22 July 2008

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The first far‐infrared laser (λ0=1.22 and 0.447 mm) scattering experiment in a laboratory plasma is described. cw laser radiation is scattered at large angles (0 °–20 °) from ion acoustic waves launched in a low‐density (ne ≃1010 cm−3) plasma thereby allowing detailed comparison with Langmuir probe data. Measurement of the wave‐number resolution and studies of both linear and nonlinear ion waves are presented. Future application areas are briefly described.
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52.70.-m Plasma diagnostic techniques and instrumentation
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.70.Gw Radio-frequency and microwave measurements

Ionic species in a silane plasma

Ivan Haller

Appl. Phys. Lett. 37, 282 (1980); http://dx.doi.org/10.1063/1.91907 (3 pages) | Cited 46 times

Online Publication Date: 22 July 2008

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The abundances Aj of groups of higher silane ions SijH+k were measured mass spectrometrically in an rf glow discharge in SiH4 under conditions used for preparation of hydrogenated amorphous silicon. The ratio Aj/Aj−1 is about 0.3 nearly independently of j, of pressure, of degree of ionization, and of rf power. The mean hydrogen to silicon ratio for j⩾3 is 1.5±0.1 and pressure independent in the 0.017–0.100‐Torr range. A mechanism postulating charge or hydride ion transfer and the addition of SiH4 as the most rapid reactions of silane ions is consistent with the observations.
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82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
72.80.Ng Disordered solids
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.25.Dg Plasma kinetic equations

Dynamic range of 106 in depth profiling using secondary‐ion mass spectrometry

K. Wittmaack and J. B. Clegg

Appl. Phys. Lett. 37, 285 (1980); http://dx.doi.org/10.1063/1.91908 (3 pages) | Cited 28 times

Online Publication Date: 22 July 2008

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Limitations in dynamic range previously experienced in SIMS depth profiling are shown to be caused by neutral projectiles present in the primary ion beam. Dynamic ranges of about 106 can be achieved if (i) the final section of the primary beam line and the sample are immersed in a UHV ambient (<10−6 Pa) and (ii) the beam traversing this region is deflected or offset from the gun axis so that energetic neutrals produced in the beam line do not hit the sample.
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85.30.De Semiconductor-device characterization, design, and modeling
07.75.+h Mass spectrometers
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Structure and compression of crystalline methane at high pressure and room temperature

R. M. Hazen, H. K. Mao, L. W. Finger, and P. M. Bell

Appl. Phys. Lett. 37, 288 (1980); http://dx.doi.org/10.1063/1.91909 (2 pages) | Cited 19 times

Online Publication Date: 22 July 2008

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Methane, CH4, crystallizes in the face‐centered cubic metal structure (space group Fm3m) at 15.9 kbar and 20 °C. Cubic unit‐cell edges at 16.1, 28.9, 39.5, and 52.1 kbar are 5.4434, 5.3064, 5.1963, and 5.0947 Å, respectively. The isothermal bulk modulus, calculated from a first‐order Murnaghan equation of state (K′=4), is 49±9 kbar. Methane transforms to a second as yet unidentified high‐pressure solid phase at 52.5 kbar (20 °C).
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62.50.-p High-pressure effects in solids and liquids
64.30.-t Equations of state of specific substances
61.05.C- X-ray diffraction and scattering
61.66.Hq Organic compounds

Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy

G. J. Davies, R. Heckingbottom, H. Ohno, C. E. C. Wood, and A. R. Calawa

Appl. Phys. Lett. 37, 290 (1980); http://dx.doi.org/10.1063/1.91910 (3 pages) | Cited 41 times

Online Publication Date: 22 July 2008

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A new method of cleaning InP substrates under molecular beam epitaxy conditions involving heating to ⩾500 °C in an As4 flux (JAs4 ≃1015–1016 cm−2 s−1) is described. Evidence of surface cleanliness, good morphology, ordered surface reconstruction, and integrity of chemical composition at the interface is given. Lattice‐matched layers of Ga0.47In0.53As grown on InP substrates cleaned in this way showed excellent electrical properties: e.g. a room‐temperature mobility μ300=8600 cmPu2 V−1 s−1 at n300 =1016 cm−3.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Crystallization‐front velocity during scanned laser crystallization of amorphous Ge films

Ralph L. Chapman, John C. C. Fan, Herbert J. Zeiger, and Ronald P. Gale

Appl. Phys. Lett. 37, 292 (1980); http://dx.doi.org/10.1063/1.91911 (4 pages) | Cited 36 times

Online Publication Date: 22 July 2008

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An optical transmission technique has been used to measure the propagation velocity of the crystallization front during scanned laser crystallization of amorphous Ge films on fused‐silica substrates. The measurements confirm our theoretical model for the solid‐phase amorphous‐to‐crystalline transformation. According to this model, the periodic structural features of the crystallized films are formed because the crystallization front moves in a series of periodic jumps between rest positions, with the velocity of the front during each jump much higher than the laser scanning velocity. The measured values of the crystallization‐front velocity range from 140 to 260 cm/sec, compared with the laser scanning velocity of only 0.5 cm/sec.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.55.-a Thin film structure and morphology
81.40.Tv Optical and dielectric properties related to treatment conditions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Refractory metal silicide formation induced by As+ implantation

M. Y. Tsai, C. S. Petersson, F. M. d’Heurle, and V. Maniscalco

Appl. Phys. Lett. 37, 295 (1980); http://dx.doi.org/10.1063/1.91912 (4 pages) | Cited 32 times

Online Publication Date: 22 July 2008

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Refractory metal silicides WSi2, TaSi2, and MoSi2 have been successfully formed by implanting As+ through the respective metal films deposited on Si. These ion‐beam‐induced silicides can be formed on 〈100〉 single‐crystal Si substrates as well as on polycrystalline Si films. The formation and annealing of these silicides have been studied by He+ backscattering, x‐ray diffraction, and sheet resistivity measurements. Apparently both the ion beam bombardment and some elevation of temperature during implantation are essential for silicide formation. Annealing these ion‐beam‐induced silicides reduces their resistivity and changes their crystallographic structure. The redistribution of implanted As is also observed.
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61.72.U- Doping and impurity implantation
64.75.-g Phase equilibria
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.66.Bi Elemental solids
61.66.Dk Alloys

Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing

T. Hussain, J. Geerk, F. Ratzel, and G. Linker

Appl. Phys. Lett. 37, 298 (1980); http://dx.doi.org/10.1063/1.91913 (3 pages) | Cited 10 times

Online Publication Date: 22 July 2008

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The effect of pulsed electron beam annealing (PEBA) on the lattice location and impurity distribution of Ga ions implanted into Al single crystals has been compared with the thermal annealing behavior of this ion/target system. While with thermal annealing only slight improvement of the lattice site occupation was observed after PEBA within experimental accuracy, all implanted impurities occupied perfect lattice sites. In the thermal treatment the Ga atoms partially diffused out of the implanted region; with PEBA, however, the implanted impurity distribution remained unchanged.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Bounds on the complex dielectric constant of a composite material

G. W. Milton

Appl. Phys. Lett. 37, 300 (1980); http://dx.doi.org/10.1063/1.91895 (3 pages) | Cited 111 times

Online Publication Date: 22 July 2008

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A generalization of the bounds obtained by Wiener and by Hashin and Shtrikman is derived for complex dielectric constants.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)

Model for nonequilibrium segregation during pulsed laser annealing

R. F. Wood

Appl. Phys. Lett. 37, 302 (1980); http://dx.doi.org/10.1063/1.91914 (3 pages) | Cited 40 times

Online Publication Date: 22 July 2008

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Highly nonequilibrium thermodynamic processes occur during the ultrarapid recrystallization characteristic of pulsed laser annealing. Values of interface segregation coefficients are observed to differ from equilibrium values by as much as three orders of magnitude and equilibrium solubility limits may be exceeded by similar magnitudes. In this letter, a model is developed which accounts quantitatively for these effects.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Studies of steam‐oxidized WSi2 by Auger sputter profiling

J. Rouse, F. Mohammadi, C. R. Helms, and K. C. Saraswat

Appl. Phys. Lett. 37, 305 (1980); http://dx.doi.org/10.1063/1.91915 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2008

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We have studied steam‐oxidized WSi2 films sputter deposited upon Si and SiO2 substrates using Auger sputter profiling. As previously reported, steam oxidation produces an SiO2 surface layer. Silicon is supplied to the growing SiO2 layer by the conversion of the WSi2 to W5Si3, and additional Si is supplied by diffusion through the WSi2 layer only for the case of a Si substrate. The W5Si3 is distributed throughout the silicide layer, but with slightly higher concentration at the SiO2‐silicide interface. This interface also contains an oxidized tungsten phase possibily is the form of a WxSiyOz compound.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Fv Electron impact: Auger emission

Damage gettering of Cr during the annealing of Cr and S implants in semi‐insulating GaAs

P. K. Vasudev, R. G. Wilson, and C. A. Evans

Appl. Phys. Lett. 37, 308 (1980); http://dx.doi.org/10.1063/1.91916 (3 pages) | Cited 11 times

Online Publication Date: 22 July 2008

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Chromium depth distributions have been measured in Cr‐doped GaAs as a function of annealing temperature from 650 to 850 °C under an SiO2 encapsulation for samples implanted with either S or Cr. Following a 650 °C/20‐min anneal, the Cr is ’’gettered’’ into two regions of residual damage, one peaked at ∼0.85 Rp and one peaked at about Rp +1.5ΔRp and with integrated densities proportional to the implant fluences. As the anneal temperature is increased, the integrated densities of Cr under these two damage peaks and a third deeper one observed under S implants decrease exponentially following an Arrhenius‐type mechanism with activation energies of approximately −1.8, −0.87, and −0.4 eV, respectively. These results are shown to be consistent with a simple thermodynamic model for the formation (association) of Cr defect complexes under the damage peaks. Theoretically estimated binding energies of the complexes are consistent with the experimental activation energies.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.U- Doping and impurity implantation

Orientation effect on planar GaAs Schottky barrier field effect transistors

C. P. Lee, R. Zucca, and B. M. Welch

Appl. Phys. Lett. 37, 311 (1980); http://dx.doi.org/10.1063/1.91917 (3 pages) | Cited 19 times

Online Publication Date: 22 July 2008

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Orientation effects on planar GaAs Schottky barrier field effect transistors (MESFET’s) have been found. Device characteristics of FET’s parallel to both [110] directions and both [100] directions are compared. Dependence of the characteristics on gate length has been measured for FET’s oriented in two perpendicular [110] directions. Preferential lateral diffusion is proposed to be the reason underlying these phenomena.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

New high‐resolution charge transfer x‐ray and electron beam negative resist

Donald C. Hofer, Frank B. Kaufman, Steven R. Kramer, and Ari Aviram

Appl. Phys. Lett. 37, 314 (1980); http://dx.doi.org/10.1063/1.91918 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2008

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A new class of polymeric negative x‐ray and electron beam resists is described. Polystyrene‐tetrathiafulvalene films doped with a halocarbon acceptor show good sensitivity to x‐rays (D1/2=44 mJ/cm2) and electron beams (D1/2=6 μC/cm2), with high contrast values γ≳2.5, and with no evidence for the classical swelling phenomena. In electron beam exposures at 10 μC/cm2, parallel wall patterns are produced with pattern resolution of 1000 Å or better. Reasons for the improvement in lithographic parameters relative to previous negative resists are briefly discussed.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.35.-x Polymers: properties; reactions; polymerization

Anodic etching of p‐type silicon as a method for discriminating electrically active and inactive defects

H. Föll

Appl. Phys. Lett. 37, 316 (1980); http://dx.doi.org/10.1063/1.91919 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2008

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Anodic etching of defects in p‐type Si can be achieved at small applied voltages with dilute HF as electrolyte. The etching behavior of defects is strongly voltage dependent. At very small voltages only electrically active defects are etched; this is shown by comparison to EBIC. At higher voltages all defects are etched. The method provides a unique tool for investigating geometrical, structural, and electronic properties of defects in a simple way and offers considerable advantages over conventional techniques.
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61.72.-y Defects and impurities in crystals; microstructure
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
82.45.-h Electrochemistry and electrophoresis
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