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1 Aug 1980

Volume 37, Issue 3, pp. 255-336

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1.33‐μm HgCdTe/CdTe photodiodes

M. Chu, S. H. Shin, H. D. Law, and D. T. Cheung

Appl. Phys. Lett. 37, 318 (1980); http://dx.doi.org/10.1063/1.91920 (3 pages) | Cited 10 times

Online Publication Date: 22 July 2008

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Hg1−xCdxTe epilayers with a wavelength of ∼1.33 μm have been successfully grown by liquid phase epitaxy. Photodiodes were fabricated and measured. Analysis of the heterojunctions indicates that at room temperature the junction current at forward bias is dominated by a generation‐recombination mechanism. The generation‐recombination effective lifetime was estimated to be 2×10−7 s. A leakage current density of 9×10−6 A/cm−2 was observed at a reverse bias of 30 V, and the diode breakdown voltage was 70 V.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects

Cd2SnO4, CdIn2O4, and Cd2GeO4 as anodes for the photoelectrolysis of water

F. P. Koffyberg and F. A. Benko

Appl. Phys. Lett. 37, 320 (1980); http://dx.doi.org/10.1063/1.91921 (3 pages) | Cited 17 times

Online Publication Date: 22 July 2008

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From their photoelectrolysis spectra we have determined the lowest band gaps of Cd2SnO4, CdIn2O4, and Cd2GeO4 to be 2.12 (indirect), 2.23 (forbidden), and 3.15 eV (indirect), respectively; their flat‐band potentials are +0.18, +0.25, and −0.82 V (SCE), respectively. This combination of band gaps and flat‐band potentials, and the observed long‐term instability of Cd2SnO4, makes these materials unsuitable as electrodes in solar photoelectrolysis cells.
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82.45.-h Electrochemistry and electrophoresis
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.80.-b Thermoelectromagnetic and other devices

In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling

S. R. Forrest, R. F. Leheny, R. E. Nahory, and M. A. Pollack

Appl. Phys. Lett. 37, 322 (1980); http://dx.doi.org/10.1063/1.91922 (4 pages) | Cited 54 times

Online Publication Date: 22 July 2008

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We report on low‐dark‐current IN0.53GA0.47As photodiodes in which generation‐recombination current dominates diode leakage up to as high as 100 V. At higher voltages, tunneling currents become dominant, resulting in the soft breakdown characteristic widely observed in these materials. The dark current versus voltage characteristics have been fit to variations in current of over six orders of magnitude and a temperature range greater than 150 K using a theory which includes generation‐recombination, tunneling, and shunt components.
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72.80.Ey III-V and II-VI semiconductors
79.70.+q Field emission, ionization, evaporation, and desorption
72.20.Ht High-field and nonlinear effects
73.40.Gk Tunneling

Diffusion length determination in p‐n junction diodes and solar cells

N. D. Arora, S. G. Chamberlain, and D. J. Roulston

Appl. Phys. Lett. 37, 325 (1980); http://dx.doi.org/10.1063/1.91891 (3 pages) | Cited 20 times

Online Publication Date: 22 July 2008

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An experimental technique for determining the minority carrier diffusion length in the base region of Si p‐n junction diodes and solar cells is described. The procedure is to operate the device in the photoconductive mode and to measure its photoresponse in the wavelength region near the energy gap. The ratio of incident light intensity to photocurrent is a linear function of reciprocal absorption coefficient for each wavelength; the slope of the set of points directly yields the diffusion length. In addition, a nonlinear least‐squares analysis is also used to determine the diffusion length.
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85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photoelectromagnetic effect in amorphous silicon

A. R. Moore

Appl. Phys. Lett. 37, 327 (1980); http://dx.doi.org/10.1063/1.91892 (4 pages) | Cited 21 times

Online Publication Date: 22 July 2008

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The short‐circuit current and open‐circuit voltage of the photoelectromagnetic effect have been measured at room temperature in discharge‐produced amorphous hydrogenated silicon (undoped, n type). From the magnitude and spectral distribution of the effect, the minority (hole) diffusion length and the hole μτ product are estimated to be 0.09 μm and 3×10−9 cm2/v, respectively, while the electron mobility is 5×10−2 cm2/v sec. From the photoconductivity the electron μτ product (majority carrier) was 8×10−8 cm2/v. Derived quantities are then hole mobility 9×10−3 cm2/v sec, hole lifetime 3×10−7 sec, electron lifetime 1.7×10−6 sec. The sign of the effect is normal. It does not show the inverted sign reported for the Hall effect in the dark.
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72.80.Ph Liquid semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Carbon‐induced amorphous surface layers in Ti‐implanted Fe

D. M. Follstaedt, J. A. Knapp, and S. T. Picraux

Appl. Phys. Lett. 37, 330 (1980); http://dx.doi.org/10.1063/1.91893 (4 pages) | Cited 35 times

Online Publication Date: 22 July 2008

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Titanium implantation into high‐purity Fe is shown to produce a ternary amorphous surface layer consisting of not only Fe and Ti, but also C. The amorphous layer forms at the surface and grows inward with increasing Ti fluence. The amount of C present also increases with Ti fluence and is believed to be deposited on the surface from the vacuum during implantation and to subsequently diffuse into the sample to produce the amorphous layer. For Ti concentrations ≲10 at.%, the amorphous layer thickness is less than the depth of the implanted Ti, but agrees with C diffusion distances, thus demonstrating that C is an essential constituent of the amorphous phase.
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61.72.U- Doping and impurity implantation
61.43.Fs Glasses
61.43.-j Disordered solids
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Variable range hopping conductivity in reduced lead glass

J. N. Sandoe, P. Blood, and D. H. Nicholls

Appl. Phys. Lett. 37, 334 (1980); http://dx.doi.org/10.1063/1.91894 (3 pages) | Cited 2 times

Online Publication Date: 22 July 2008

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We have measured the conductivity of a sample of reduced channel‐plate lead glass over the temperature range 25–300 K. The behavior is consistent with conduction by two‐dimensional variable range hopping. From measurements of the thickness of the conducting layer we estimate the wave‐function overlap parameter α−1⩾50 Å and hence from the temperature dependence of the conduction we deduce that the density of states at the Fermi level is less than 4×1017 eV−1 cm−3.
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72.80.Ng Disordered solids
73.25.+i Surface conductivity and carrier phenomena
81.05.Kf Glasses (including metallic glasses)
FREE

Erratum: Semiconducting properties of ZnO–grain‐boundary–ZnO junctions in ceramic varistors

L. F. Lou

Appl. Phys. Lett. 37, 336 (1980); http://dx.doi.org/10.1063/1.92104 (1 page)

Online Publication Date: 22 July 2008

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Abstract Unavailable
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.-c Electronic transport in interface structures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
99.10.Cd Errata
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